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51. 发明专利

JPS56109256A PELLICLEEFORMING COATING LIQUID COMPOSITION AND COATING THEREOF 失效
公开(公告)号：JPS56109256A
公开(公告)日：1981-08-29
申请号：JP1149880
申请日：1980-02-04
申请人： HITACHI LTD
发明人： SHIYOUJI FUSAJI , NAKATANI MITSUO , WATANABE TAKESHI , SUDOU RIYOUICHI , YOKONO ATARU , ISOGAI TOKIO , MATSUYAMA HARUHIKO , AZUMA KAZUFUMI
IPC分类号： C09D183/04 , C08L83/04 , H01B3/46
摘要： PURPOSE:To form a uniform pellicle having good wetting properties to a substrate, by a method wherein a coating liquid consisting of a specified org. solvent and a phenyl group-contg. ladder type organosilicone polymer, is coated on the surface of a material to be coated by a printing method, etc. CONSTITUTION:There is provided a compsn. consisting of 80-99.5wt% solvent selected from compd. having the formula I and/or II (wherein R1 is acetyl, carboxylic acid ester, alkoxy, cyano, cycloalkyl, cycloalkene; R2 is acetyl, cycloalkyl, benzyl; n is 3,4,5,6) such as 2-acetylcyclohexanone and N-acetyl-2-caprolactam and 0.5-20wt% phenyl group-contg. ladder type organosilicone polymer having a relative viscosity of 1.1-3.0 (in 0.1% benzene soln. at 30 deg.C) such as polyphenylsilsesquioxane. This compsn. can be used for wire-insulating materials, protective films for semiconductors, orientation membranes for liquid crystal display device, etc. The compsn. can be produced with good workability without any problems on safety and hygiene.

52. 发明专利

JPS55150046A RETRYING SYSTEM FOR DATA PROCESSOR 失效
公开(公告)号：JPS55150046A
公开(公告)日：1980-11-21
申请号：JP5709279
申请日：1979-05-11
申请人： HITACHI LTD
发明人： WATANABE TAKESHI
IPC分类号： G06F9/22 , G06F11/00 , G06F11/14
摘要： PURPOSE:To increase greatly the retry enable range by trying the order retry through setting of the FF showing the possibility of the retry in case no success is secured although the microorder retry is carried out in the prescribed frequency. CONSTITUTION:In case some fault occurs while the process is carried out, the state of the hardware is released to the state same as that immediately before occurrence of the error. And the contents of registers 3 and 12 are released to registers 1 and 11 respectively. Thus the success is decided for the microorder retry if no hardware error occurs again. If some error occurs, the execution is given in the prescribed frequency. And the success is not obtained yet, the order retry is given. In other words, the checking is given whether FF6 showing the possibility of retry is set or not. And the order retry is given in case FF6 is set; while the interruption code is set if FF6 is not set to perform the machine check interruption. As a result, the retry enable range can be increased greatly.

53. 发明专利

JPS5562427A LIQUID CRYSTAL DISPLAY DEVICE 失效
公开(公告)号：JPS5562427A
公开(公告)日：1980-05-10
申请号：JP13585578
申请日：1978-11-06
申请人： HITACHI LTD
发明人： SHIYOUJI FUSAJI , WATANABE TAKESHI , SUDOU RIYOUICHI , TAKEMOTO KAZUNARI , YOKONO ATARU
IPC分类号： G02F1/1337 , G02F1/133 , G09F9/00
摘要： PURPOSE:To make the liquid crystal display device of high heat resistance, long life, high characteristics and high reliability for electric calculator, watches, etc. by using ladder-form polysiloxane for orientation control films and inorganic sealing agents for electrode substrate sealing agents. CONSTITUTION:The ladder-form polysiloxane shown by the formula [R1-R4 are (substituted) diphenyl, (substituted) naphthyl, substituents are halogen, alkyl; alkyl such as methyl, etc., R1-R4 are mutually the same or mutually different groups] is used as orientation control films 3. The films are colorless and are highly heat resistant. Glass frit of low melting points of 350-470 deg.C is used for sealing of substrates 6. This enables the seal 5 of good water resistance and airtightness to be obtained and prevents the orientation films 3 from being affected by the heat at the sealing. Hence display device of high reliability may be obtained.

54. 发明专利

JPS5550645A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS5550645A
公开(公告)日：1980-04-12
申请号：JP12259678
申请日：1978-10-06
申请人： HITACHI LTD
发明人： SUDOU RIYOUICHI , WATANABE TAKESHI , SHIYOUJI FUSAJI , TAKEMOTO KAZUNARI , YOKONO ATARU , ISOGAI TOKIO
IPC分类号： H01L21/768 , H01L21/312 , H01L23/29 , H01L23/31 , H01L23/522
摘要： PURPOSE:To form a surface stabilizing film not seen in the conventional devices on a semiconductor substrate by using a bridging ladder type organo-silicone polymer. CONSTITUTION:In a bridging ladder type organo-silicon polymer having radicals R1 with comparatively high heat-proof, such as, phenyl or methyl radicals, etc. and radicals R2, which manufacture bridging union by heating, etc., such as, alkyl or vinyl radicals, etc., the radicals are selected according to a formula R2/(R1+R2)= 0.2-0.005 (a molar ratio), and the polymer is dissolved in benzene, tetralin, etc. and revolution-applied on a semiconductor substrate near room temperature. The substrate is dried and bridging-reacted at 100-350 deg.C. Film materials are plasma- etched or dried at low temperatures by means of a resist mask, dissolution-removed by means of the resist mask and can be worked. When the phenyl radical is employed as the R1, a film bridged is not decomposed up to 500 deg.C and resists even to a high temperature reliability test, excellently adheres even to semiconductor elements and metal materials, does not deteriorate in high humidity and has high-degree insulating properties in not more than 3 dielectric constants.

55. 发明专利

JPS5520226A FORMING METHOD FOR TRANSPARENT* ELECTRICALLY CONDUCTIVE FILM PATTERN 失效
公开(公告)号：JPS5520226A
公开(公告)日：1980-02-13
申请号：JP9161978
申请日：1978-07-28
申请人： HITACHI LTD
发明人： SUDOU RIYOUICHI , OKUNAKA MASAAKI , WATANABE TAKESHI , ISOGAI TOKIO
IPC分类号： C03C17/25 , C03C17/22
摘要： PURPOSE:To form a highly accurately patterned transparent, electrically conductive film on the surface of a substrate by coating a specified compsn. contg. metal salts of photosetting org. acids onto the substrate followed by exposure, etching and calcination. CONSTITUTION:0.2-5 wt% of a photosensitizer such as benzoin isopropyl ether or benzophenone is blended into Sn and In salts of org. acids each contg. a photosetting functional group represented by formulae I-III (where R is a photosetting functional group; R' is 1-10 C alkyl or phenyl; m=0-3; and l=0-2). The resulting compsn. is dissolved in a solvent such as acetone or methyl ethyl ketone to a concn. of 50-99 wt%, preparing a coating soln. This soln. is coated onto the surface of a substrate so that the thickness of a film after drying becomes 0.1-10 mum. By irradiating patterned ultraviolet rays of wavelengths below 400 nm for 0.1-5 min the exposed part of the film is set, and the unexposed part is removed by etching. The substrate is then calcined at 400-700 deg.C to form a transparent, electrically conductive film pattern.

56. 发明专利

JPS5512910A SUBSTRATE FOR HOLDING LIQUID CRYSTAL 失效
公开(公告)号：JPS5512910A
公开(公告)日：1980-01-29
申请号：JP8510678
申请日：1978-07-14
申请人： HITACHI LTD
发明人： WATANABE TAKESHI , SUDOU RIYOUICHI , SHIYOUJI FUSAJI , TAKEMOTO KAZUNARI , YOKONO ATARU
IPC分类号： G02F1/1337 , G02F1/133 , G09F9/00
摘要： PURPOSE:To molecule axis of a liquid crystal can be made parallel with the surface of a substrate and be oriented to the specified direction of the substrate for any liquid crystal material by making an orientation control film from a hardened material of polyfunctional aromatic ester cyanate. CONSTITUTION:Solution of polyfunctional aromatic ester cyanate such as dicyanodiphenylmethane 4,4', cyanate of formulas I and II and the like is applied on a glass substrate on which transparent electrode are selectively attached, thereafter heated, and hardened. A liquid crystal is held by the glass substrate on which said hardened film is applied, thereby a liquid-crystal display device is constituted. In this way, can be obtained the liquid-crystal display, which has the uniform orientation of the liquid crystal material throughout the broad area of the substrate, is stable during the gradual elapse of time, and has a long service life and excellent characteristics.

57. 发明专利

JPH1175801A WELSH ONION TREATING APPARATUS 失效
公开(公告)号：JPH1175801A
公开(公告)日：1999-03-23
申请号：JP24387297
申请日：1997-09-09
申请人： HITACHI TECHNO ENG , HITACHI LTD , YANMAR AGRICULT EQUIP
发明人： SAITO SATOSHI , WATANABE TAKESHI , MARUYAMA ISAMU , NAKAJIMA KAZUO , TAKAHASHI EIICHI
IPC分类号： A23N7/00 , A23N15/00 , A23N15/04
摘要： PROBLEM TO BE SOLVED: To provide a Welsh onion-treating apparatus easy in charging Welsh onions into the apparatus, and enabling the continuous individual smooth performance of the peeling-off of husks and the even cutting of leaves and hairy roots into respectively desired lengths. SOLUTION: A plurality of partition panels 2 are each arranged with a space to the next one for holding a Welsh onion on a pair of endless chains 1a and 1b which are installed at upper and lower positions, and move synchronously with each other in rectangular paths. A belt conveyor 4 for transporting Welsh onions is installed above the upper endless chain 1a. A plate 12 for receiving the Welsh onion which is inserted into between a pair of partition panels is placed below the lower endless chain 1b and between each pair of partition panels, and the plate moves synchronously with the moving of the endless chain 1b. A working place for putting Welsh onions into between partition panels 12 is formed on one side of the endless chain 1a and 1b. Further, endless transfer belts 15a and 15b for clamping leaves of the Welsh onion inserted into between partition panels and transporting them, and a pair of sidewall boards 21a and 21b are placed on the other side of the endless chain 1a and 1b in such manner that each partition panel 2 passes between the endless transfer belts 15a and 15b, and also between the sidewall boards 21a and 21b.

58. 发明专利

JPH09269903A PROCESS MANAGING SYSTEM 失效
公开(公告)号：JPH09269903A
公开(公告)日：1997-10-14
申请号：JP7982696
申请日：1996-04-02
申请人： HITACHI LTD
发明人： ENKO YUTAKA , ARAI TOSHIAKI , YAMAMOTO HIROKI , SHOJI TADASHI , SEKIGUCHI TOMONORI , NODA TSUTOMU , WATANABE TAKESHI , MOCHIDA TETSUYA
IPC分类号： G06F15/16 , G06F9/46 , G06F9/50 , G06F15/177
摘要： PROBLEM TO BE SOLVED: To permit respective processors to take-out execution process from respective run queues in parallel and to improve the parallel degree of system execution by permitting the respective processor to provide the run queues which hold execution possible state process. SOLUTION: Plural processors 101-104 share a main storage device 140 and the respective processors 101-104 are provided with data structure (run queue) for holding execution possible state process. A monitoring means 120 monitoring the execution conditions of the processors 101-104 for them and reporting the re-configuration of the run queues and a re-constituting means 130 re-constituting the run-queues are provided. The monitoring means 120 informs the re-constituting means 130 of reconfiguration with the processor as the process transfer destination one at the time of no process to be executed in one of the plural processors 101-104.

59. 发明专利

JP2590112B2 失效
公开(公告)号：JP2590112B2
公开(公告)日：1997-03-12
申请号：JP17277887
申请日：1987-07-13
申请人： HITACHI LTD
发明人： TANAKA MASAHIRO , AZUMA KAZUFUMI , WATANABE TAKESHI , NAKATANI MITSUO , SONOBE TADASHI
IPC分类号： C23C16/50 , C23C16/511 , H01L21/205 , H01L21/31

60. 发明专利

JPH07307482A INTEGRATED THIN-FILM SOLAR CELL 失效
公开(公告)号：JPH07307482A
公开(公告)日：1995-11-21
申请号：JP10048994
申请日：1994-05-16
申请人： HITACHI LTD
发明人： WATANABE TAKESHI , MURAMATSU SHINICHI , TSUTSUI KEN , TAMURA KATSU
IPC分类号： H01L31/04
摘要： PURPOSE:To obtain an integrated thin-film solar cell whose efficiency is not lowered due to a short-circuit defect by a method wherein the end part on the side of a semiconductor-layer division and isolation groove of at least one out of a first-conductivity-type semiconductor layer and a second-conductivity-type semiconductor layer is separated from the semiconductor- layer division and isolation groove by a multiple or higher of the specific value of the film thickness of an i-type semiconductor. CONSTITUTION:One or more laminated semiconductor layers wherein a first-conductivity-type semiconductor layer 13, an i-type semiconductor layer 14 and a second-conductivity-type semiconductor layer 15 whose conductivity type is opposite to that of the first-conductivity-type semiconductor layer 13 have been laminated on substrate-side electrodes 12 isolated and formed on the same substrate 11 are formed. Then, the laminated semiconductor layers are divided by a semiconductor-layer division and isolation groove, a rear-side electrode 19 is formed on every divided laminated semiconductor layer, and the substrate-side electrode 12 in every adjacent laminated semiconductor layer is connected to the rear-side electrode 19. In such a laminated solar cell, the end part on the side of the semiconductor-layer division and isolation groove of at least one out of the first-conductivity-type semiconductor layer 13 and the second-conductivity-type semiconductor layer 15 is separated from the semiconductor-layer division and isolation groove by five times or higher of the film thickness of the i-type semiconductor layer 14.

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