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51. 发明专利

JPH08287416A MAGNETIC RECORDING AND REPRODUCING DEVICE 失效
公开(公告)号：JPH08287416A
公开(公告)日：1996-11-01
申请号：JP8363895
申请日：1995-04-10
申请人： HITACHI LTD
发明人： KOMURO MATAHIRO , KAWATO YOSHIAKI
IPC分类号： G11B5/39
摘要： PURPOSE: To obtain a magnetic head having high wear resistance and corrosion resistance by arranging a magneto-resistance effect film on a sliding surface side and parting the giant magneto-resistance effect films from a head sliding surface. CONSTITUTION: A magnetic head 100 is composed of a lower shielding film 82 on a ceramic substrate 50 consisting of zirconia, etc., the giant magneto- resistance effect films consisting of a second ferromagnetic layer 10 which is a free layer, a nonmagnetic conductive film 11, a first ferromagnetic film 12 which is a fixing layer and an antiferromagnetic film 13 for fixing the magnetization of the first ferromagnetic film 12, an electrode 40, an upper shielding film 81, a lower magnetic core 84, a coil 41 and an upper magnetic core 83. Namely, a reproducing part and a core for recording are formed on the same slider. The execution of recording and reproducing by the same head is thus made possible. The magnetic disk surface side is the magneto-resistance effect film and the laminated films on the deep side thereof are the giant magneto- resistance effect films. The magnetic head having the lower flying height and the high wear resistance and corrosion resistance is thereby obtd.

52. 发明专利

JPH0778313A MAGNETIC RECORDING AND REPRODUCING DEVICE 失效
公开(公告)号：JPH0778313A
公开(公告)日：1995-03-20
申请号：JP22327793
申请日：1993-09-08
申请人： HITACHI LTD
发明人： HOSHIYA HIROYUKI , KOMURO MATAHIRO , AIHARA MAKOTO , FUYAMA MORIAKI
IPC分类号： G11B5/39
摘要： PURPOSE:To provide the magnetic recording and reproducing device having a high recording density and an MR element having high output and durability by using laminated films of Co and NiFe in constituting the multilayered magnetic films of the MR element. CONSTITUTION:The MR element is constituted by laminating an antiferromagnetic film 30, a magnetic film 21, a nonmagnetic conductive film 20 and a ferromagnetic film 22 on a substrate 50. This ferromagnetic film 21 is a laminate of magnetic layers 11, 12 or the ferromagnetic layer 22 is a laminate of magnetic layers 13, 14 and an electrode 40 is installed under the antiferromagnetic film 30. The multilayered magnetic films are formed of a prescribed material by a high-frequency magnetron sputtering device. The hysteresis of the films of the magnetic film 21 adjacent to the antiferromagnetic film 30 is decreased and the reproducibility is enhanced by the formation of this film into the multiple layers. Further, a macromagneto-resistance effect is increased and the reproduced output of the element is increased by the formation of the ferromagnetic film 22 not directly adjacent to the antiferromagnetic film into the multiple layers. The heat resistance of the films improved if the magnetic layer 21 on the substrate side of the MR films is made into the film having a specific compsn. and structure.

53. 发明专利

JPH0610341B2 失效
公开(公告)号：JPH0610341B2
公开(公告)日：1994-02-09
申请号：JP6137986
申请日：1986-03-19
申请人： HITACHI LTD
发明人： KOZONO JUZO , NARUSHIGE SHINJI , MITSUOKA KATSUYA , KOMURO MATAHIRO , HANAZONO MASANOBU , OOSHITA YOICHI
IPC分类号： C23C14/24

54. 发明专利

JPH0588311B2 失效
公开(公告)号：JPH0588311B2
公开(公告)日：1993-12-21
申请号：JP24518386
申请日：1986-10-17
申请人： HITACHI LTD
发明人： KOMURO MATAHIRO , KOZONO JUZO , NARUSHIGE SHINJI , HANAZONO MASANOBU , KURODA TETSUO
IPC分类号： C23C14/06 , C23C14/16 , C23C14/24 , G01N23/22 , G11B5/64 , G11B5/65 , G11B5/66 , G11B5/716 , G11B5/738 , G21K1/06 , H01F41/20

55. 发明专利

JPH0328199A PREPARATION OF FE16N2 FILM 失效
公开(公告)号：JPH0328199A
公开(公告)日：1991-02-06
申请号：JP15955989
申请日：1989-06-23
申请人： HITACHI LTD
发明人： KOMURO MATAHIRO , KOZONO YUZO , HANAZONO MASANOBU
IPC分类号： C30B23/02 , C23C14/06 , C30B29/38 , H01F10/14 , H01F10/26 , H01F10/28
摘要： PURPOSE:To improve saturation magnetic flux density by directly growing Fe16N2 on a material having a specific lattice constant according to a vacuum deposition method and preparing a film thereon. CONSTITUTION:Fe of >=99.99% purity preheated with electron rays in a vacuum deposition chamber under Torr pressure before vacuum deposition on a single crystal substrate, such as InP, having 5.653-6.058Angstrom lattice constant is used as a vacuum deposition source and N2 gas is simultaneously injected to carry out vacuum deposition under condition shown in the table while controlling vacuum deposition rate with a film thickness monitor. A phase in which Fe atoms and N2 atoms are oriented is grown by the above-mentioned vacuum deposition method to afford an Fe16N2 film having a volume fraction of Fe16N2 with >=2.20T saturation magnetic flux density accounting for >=50% of the film.

56. 发明专利

JPH01217979A MAGNETIC SUBSTANCE/SEMICONDUCTOR LAMINATED LAYER 失效
公开(公告)号：JPH01217979A
公开(公告)日：1989-08-31
申请号：JP4203188
申请日：1988-02-26
申请人： HITACHI LTD
发明人： KOMURO MATAHIRO , KOZONO YUZO , HANAZONO MASANOBU
IPC分类号： H01L39/02 , C23C14/06 , H01B12/02
摘要： PURPOSE:To obtain a superconducting material exhibiting superconducting characteristics at Tc>77 deg.K, by stacking semiconductor and ferromagnetic substance by evaporating method, sputtering method, CVD method, etc., and growing the layers without mutual diffusion, formation of compound and disorder of atom arrangement. CONSTITUTION:Magnetic substance.semiconductor laminated layer material is obtained, wherein magnetic substance and semiconductor are stacked one upon another, and superconducting characteristics are exhibited by the bonding of electron spin of magnetic substance through electron of the semiconductor. As a substrate, e.g., (100) Si single crystal substrate is used, the substrate is subjected to cleaning by heating before evaporation, and it is confirmed by RHEED pattern that the substrate surface has been cleaned. An evaporation source is pre-heated by electron beam, Si and ferromagnetic metal are evaporated with a deposition rate of 0.1Angstrom /sec by which the gas of the evaporation source is discharged. When the film layer dS of semiconductor and the film layer dM of magnetic substance have a relation dS=DM=20Angstrom , the temperature dependency of resistivity of the laminated material is as shown in figure. During the evaporation, the layer is manufactured, while Fe(100)parallel toSi(100) is confirmed by RHEED. In the case of Fe/Si, Tc=128 deg.K. In the case of Co/Si, Tc=120 deg.K. In the case of Ni/Si, Tc=77 deg.K.

57. 发明专利

JPS6457685A FORMATION OF SUPERCONDUCTING THIN FILM 失效
公开(公告)号：JPS6457685A
公开(公告)日：1989-03-03
申请号：JP21278487
申请日：1987-08-28
申请人： HITACHI LTD
发明人： ONO TOSHIYUKI , KOZONO YUZO , KOMURO MATAHIRO
IPC分类号： C01G1/00 , C04B41/80 , H01B12/06 , H01B13/00 , H01L39/24
摘要： PURPOSE:To form a superconducting thin film by a process capable of preventing fluorine from being eliminated by a method wherein a thin film body to be a superconducting thin film, containing transition metal, oxygen and fluorine, is formed and then exposed to fluorine plasma to contain fluorine. CONSTITUTION:In order to form a superconducting thin film in composition of element containing transition metal, oxygen and fluorine is contained by exposing the thin film to fluorine plasma after forming a thin film body to be said superconducting thin film. For example, a sintered target in composition of YBa3Cu9O7 is mounted on a high-frequency sputtering device; a mixed gas of O2 and Ar is led in holding the surface temperature of SrTiO3 substrate at 200 deg.C and a Y-Ba-Cu-O film is deposited by high-frequency glow discharge. Finally, said Y-Ba-Cu-O film is fluorine plasma-processed, after annealing process at 980 deg.C in O2 atmosphere, in a vacuum vessel held at 200 deg.C in fluorine plasma atmosphere by leading-in mixed gas of Ar and Fe2 as well as the glow discharge.

58. 发明专利

JPS6428957A MAGNETIC SEMICONDUCTOR MATERIAL 失效
公开(公告)号：JPS6428957A
公开(公告)日：1989-01-31
申请号：JP18500287
申请日：1987-07-24
申请人： HITACHI LTD
发明人： KOMURO MATAHIRO , KOZONO YUZO , NARUSHIGE SHINJI , HANAZONO MASANOBU
IPC分类号： H01L29/267 , H01L29/66 , H01L43/08 , H01S5/00
摘要： PURPOSE:To make a magnetic transformation point high and to make variations controllable in electron mobility and energy gaps by the use of an outside magnetic field, by interposing compound semiconductor layers between magnetic element substance layers to compose a laminated matter. CONSTITUTION:A magnetic element substance 1 is used to form upper and lower layers, and a p-type semiconductor and an n-type semiconductor 3 are laminated as middle layers to be interposed between the layers 1. An n-type semiconductor 6 is laminated as a middle layer to be interposed between the upper and lower layers of p-type semiconductors 5. The p-type semiconductors 5 are doped with a magnetic material 4 as a dopant. Then the compound semiconductor is composed of group III-V elements in a periodic table or group II-VI elements in the periodic table. Particularly, In-Sb, In-As, Al-As are preferable for combinations in the III-V element semiconductors, and Cd-Se is preferable for a combination in the II-VI element semiconductor. Particularly, Fe, Co, Ni are preferable for the magnetic element substances. Accordingly an energy gap can be varied by using a mutual action of exchange between the magnetic elements in the magnetic semiconductor to apply a magnetic field.

59. 发明专利

JPS63318013A SUPERCONDUCTIVE WIRING MATERIAL 失效
公开(公告)号：JPS63318013A
公开(公告)日：1988-12-26
申请号：JP15119287
申请日：1987-06-19
申请人： HITACHI LTD
发明人： IMAGAWA TAKAO , KOZONO YUZO , KOMURO MATAHIRO , SANO MASAAKI , NISHIOKA KOICHI , NARUSHIGE SHINJI , HANAZONO MASANOBU , ONISHI TAKASHI
IPC分类号： C30B29/22 , H01B12/06 , H01L39/06 , H01L39/22 , H05K1/02
摘要： PURPOSE:To provide a wiring material with high density and without wiring resistance by forming a superconductor of oxide type on a mono-crystal base plate with mono-crystals, and inclining the crystal surface to the base plate surface. CONSTITUTION:The superconductor of oxide type is oxide of rare earth and Co such as Ba2CuO4, and the crystal indicates perovskite structure. When a mono-crystal film having (011) surface of Ba2CuO4 is formed on, e.g., a sapphire surface base plate 1, a set of (001) surfaces parallel with each other and without electrical contact will be formed, in which a direction 4 as superconductive condition and a direction 5 to become an electrically insulating body coexist on the same base plate surface. On this surface terminals 6-8 are formed with Cu etc., by means of evaporation. Thereby the terminals 6, 7 lying on the same surface (001) are given electrical continuity without any electric resis tance, while those 7, 8 are put in insulated state, and consideration on arrange ment of these terminals should enable mounting of elements in high density.

60. 发明专利

JPS63194314A HIGHLY SATURATED MAGNETIC FLUX DENSITY MULTILAYERED MATERIAL 失效
公开(公告)号：JPS63194314A
公开(公告)日：1988-08-11
申请号：JP2560087
申请日：1987-02-07
申请人： HITACHI LTD
发明人： KOMURO MATAHIRO , KOZONO YUZO , NARUSHIGE SHINJI , HANAZONO MASANOBU , SANO MASAAKI
IPC分类号： C23C14/06 , C23C14/24 , C23C14/34 , G11B5/147 , G11B5/64 , G11B5/65 , G11B5/66 , G11B5/706 , G11B5/738 , H01F10/10
摘要： PURPOSE:To make saturated magnetic flux density 2.2 T or more by alternately laminating by making the thickness of an fcc (facecentered cubic lattice) element film which has a phase isolation tendency from Fe 20 nm or less and the thickness of an Fe single layer film several or more times the thickness of the fcc element single layer film. CONSTITUTION:The thickness of an fcc element single layer film is made 20 nm or less, the thickness of an Fe single layer film is made several or more times the fcc element single layer film and saturated magnetic flux density is made 2.2 T or more. The above-mentioned fcc element is Ag or Pd and the thickness of the Fe single layer film is made five or more times the thickness of an Ag or a Pd single layer film. If the Fe single layer film is made by sputtering or evaporation, prior growth orientation in general is (110). On the other hand, the prior growth orientation of Ag or Pd is (111). The growing of the crystal orientation of a multilayered film, however, keeping the relation of (110)/(111) is impossible due to greater lattice deformation. Accordingly, it is important that Ag (200) or Pd (200) which has the smallest spacing difference from Fe (110) is grown in parallel with the Fe (110) and the other face orientation is not grown.

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