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    • 1. 发明专利
    • SPIN VALVE TYPE MAGNETIC HEAD AND ITS MANUFACTURING METHOD
    • JP2003178405A
    • 2003-06-27
    • JP2002305285
    • 2002-10-21
    • HITACHI LTD
    • NISHIOKA KOICHIKAMIO HIROSHISHIGEMATSU KEISHIIMAGAWA TAKAONARUSHIGE SHINJI
    • G11B5/39
    • PROBLEM TO BE SOLVED: To provide a spin valve type magnetic head wherein no characteristic changes occur within an operation temperature range. SOLUTION: The antiferromagnetic layer of the fixed layer of a spin valve is made of an alloy which contains Cr, Mn, Pt, a magnetic field is kept to be applied which is enough to magnetically saturate the fixed layer in a magnetic gap depth direction at a temperature lower than the blocking temperature (Tb) of the antiferromagnetic layer, and after the fixed layer is cooled in the magnetic field, a minimum magnetic field enough to saturate the magnetization of the free layer of the spin valve is kept to be applied in this direction at a temperature lower than Tb. A coupling magnetic field He of one-direction anisotropy of the fixed layer is set to H e (Tmax)≥60+100/ hMR[Oe] where a highest process temperature is T max and an element height is hMR (μm), an antiferromagnetic layer composition is (Cr 100-x Mn x ) 100-y Pt y , 2≤y, 40≤x≤70, columnar crystal powders are formed, an average crystal particle size of the antiferromagnetic layer is set to 2.7×10 -18 cm 3 or higher by film thickness control, (110) of bct is set parallel to a film surface, a long axis is set within the film surface, and magnetization is fixed in a desired direction up to a fixed layer component having Tb of T max or higher. COPYRIGHT: (C)2003,JPO
    • 2. 发明专利
    • Magnetic recording device and magnetic head
    • 磁记录装置和磁头
    • JP2003045001A
    • 2003-02-14
    • JP2001226991
    • 2001-07-27
    • Hitachi Ltd株式会社日立製作所
    • OTSU TAKAYOSHINARUSHIGE SHINJI
    • G11B5/667G11B5/00G11B5/02G11B5/03G11B5/127G11B5/39
    • G11B5/00G11B5/03G11B5/1278G11B5/3967G11B2005/001G11B2005/0016
    • PROBLEM TO BE SOLVED: To solve the problem of magnetic domain formation in a perpendicular magnetization medium provided with the primary film of a soft magnetic film, which causes a reproducing head to detect a magnetic flux from a magnetic wall as nose and misunderstand it as an original signal.
      SOLUTION: The prevention of magnetic domain formation as the problem of a perpendicular magnetization medium provided with the primary film of a soft magnetic film is achieved by carrying put proper magnetic domain control for the soft magnetic film. One method is to carry out the magnetic domain control of the soft magnetic film by applying a magnetic field to the medium from the outside, and the method is to install a mechanism for generating a magnetic field to carry out the magnetic domain control of the soft magnetic film of the medium in the magnetic head.
      COPYRIGHT: (C)2003,JPO
    • 要解决的问题:为了解决设置有软磁膜的初级膜的垂直磁化介质中的磁畴形成的问题,这导致再现头从磁性壁作为鼻子检测磁通,并将其误解为 原始信号 解决方案:通过对软磁膜进行适当的磁畴控制,可以实现防磁磁场形成作为提供软磁膜初级膜的垂直磁化介质的问题。 一种方法是通过从外部向介质施加磁场来执行软磁膜的磁畴控制,并且该方法是安装用于产生磁场的机构,以执行软的磁畴控制 介质在磁头中的磁性膜。
    • 3. 发明专利
    • SPIN VALVE TYPE MAGNETIC HEAD AND PRODUCTION OF SPIN VALVE TYPE MAGNETIC HEAD
    • JPH10308004A
    • 1998-11-17
    • JP12801197
    • 1997-05-01
    • HITACHI LTD
    • NISHIOKA KOICHIKAMIO HIROSHISHIGEMATSU KEISHIIMAGAWA TAKAONARUSHIGE SHINJI
    • G11B5/39
    • PROBLEM TO BE SOLVED: To provide a spin valve type magnetic head which is free from a characteristic change in an operating temp. range. SOLUTION: The antiferromagnetic layer of a fixing layer of a spin valve consists of an alloy contg. Cr, Mn and Pt. A magnetic field sufficient for magnetic saturation of the fixing layer is impressed and held in the depth direction of a magnetic gap at a temp. lower than the blocking temp. (Tb) of the antiferromagnetic layer. The min. magnetic field sufficient for saturating the magnetization of the free layer of the spin valve in a track width direction is impressed and held on the layer in its direction at the temp. lower than Tb after cooling in the magnetic field. The coupling magnetic field He in the unidirectional anisotropy of the fixing layer is set at Hc (Tmax)>=100/hMR[Oe] where the process max. temp. is defined as Tmax and the element height as hMR. The compsn. of the antiferromagnetic layer is composed of (Cr100-x Mnx )100-x Ptv , where 2 =2.7×10 cm by film thickness control. The (110) of bct is made parallel with the film plane so as to have a major axis within the film plane. The fixation of the magnetization in a desired direction down to the components of the fixing layer having Tb of Tmax or above is made possible.