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41. 发明专利

JPH0277123A DRY ETCHING 失效
公开(公告)号：JPH0277123A
公开(公告)日：1990-03-16
申请号：JP19590488
申请日：1988-08-04
申请人： TOKYO ELECTRON LTD
发明人： HIROSE KEIZO , NISHIMURA TOSHIHARU
IPC分类号： C23F4/00 , H01L21/302 , H01L21/3065
摘要： PURPOSE:To make it possible to set a substitution period for by-product, residual gas and main etchant gas, and to control a trench in a desired form by intermittently generating plasma, during a process in which dry etching is performed in a plasma atmosphere. CONSTITUTION:A silicon wafer 10 is carried onto a second electrode 3; from a gas feeding pipe 9, etching reaction gas, e.g., SF6 gas with a flow rate of 100 SCCM, O2 gas with a flow rate of 80 SCCM, and Kr gas with a flow rate of 150 SCCM are supplied in a vessel 1; the inside of the hermetic vessel 1 is kept at a constant pressure, e.g., 0.6Torr. Then, with reference to an intermediate electrode 4, high frequency power of 13.56MHz is applied to a first electrode 2 and a second electrode 3; for example, power of 400W and power of 200W are applied to a first electrode 2 and a second electrode 3, respectively, from high frequency power supplies 5, 6; the output periods of the high frequency power are controlled in the respective desired periods by pulse generators 7, 8. By intermittently generating plasma, the trench form of anisotropic trench etching using low temperature plasma can be improved.

42. 发明专利

JP2012186245A Joining device, joining system, joining method, program, and computer storage medium 审中-公开
标题翻译：加工设备，加工系统，加工方法，程序和计算机存储介质
公开(公告)号：JP2012186245A
公开(公告)日：2012-09-27
申请号：JP2011047152
申请日：2011-03-04
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： HIROSE KEIZO , KITAHARA SHIGENORI , SUGIHARA SHINTARO
IPC分类号： H01L21/02 , B23K20/00 , H01L21/683
CPC分类号： H01L21/67092 , B23K20/023 , B23K20/233 , B23K2201/40 , H01L21/6715 , H01L21/6838
摘要： PROBLEM TO BE SOLVED: To properly control a load when substrates are pressed, and properly join the substrates to each other.SOLUTION: A joining device comprises: an upper chuck 230 attracting and holding an upper wafer Won its lower surface; and a lower chuck 231 which is provided below the upper chuck 230 and places a lower wafer Won its upper surface to attract and hold the lower wafer W. A pressing member 250 pressing a center part of the upper wafer Wis provided in the upper chuck 230. The pressing member 250 comprises: an actuator part 251 which contacts with the center part of the upper wafer Wand controls a load applied to the center part of the upper wafer W; and a cylinder part 252 moving the actuator part 251 in the vertical direction. An electropneumatic regulator supplying air at a predetermined pressure to the actuator part 251 is provided at the actuator part 251.
摘要翻译：要解决的问题：为了在基板被按压时适当地控制负载，并且将基板彼此适当地接合。解决方案：接合装置包括：在其下表面上吸引并保持上晶片W U 的上卡盘230; 以及下卡盘231，其设置在上卡盘230的下方，并且在其上表面上放置下晶片W L ，以吸引并保持下晶片W →。在上卡盘230中设置有按压上晶片W U 的中心部分的按压构件250.按压构件250包括：致动器部分251，其与中心部分的上部晶片W U ，并控制施加到上晶片W U 的中心部分的负载; 以及使致动器部251沿垂直方向移动的圆筒部252。在致动器部251，设置有向预定压力供给空气的电动气动调节器。（C）2012，JPO＆INPIT

43. 发明专利

JP2012186244A Joining method, program, computer storage medium, joining device, and joining system 有权
标题翻译：加工方法，程序，计算机存储介质，接合装置和接合系统
公开(公告)号：JP2012186244A
公开(公告)日：2012-09-27
申请号：JP2011047150
申请日：2011-03-04
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： KITAHARA SHIGENORI , HIROSE KEIZO
IPC分类号： H01L21/02 , H01L21/68
CPC分类号： B32B37/02 , B32B41/00 , H01L21/187 , H01L21/2007 , H01L21/67092 , H01L21/67109 , H01L21/6715 , H01L21/67748 , H01L21/6831 , H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To inspect the joining quality of substrates and smoothly conduct processing after joining the substrates.SOLUTION: An upper wafer and a lower wafer are joined (STEP S1 to S13). Then, vacuum drawing is conducted to the upper wafer in an upper chuck, and the adequacy of the joining quality of the upper wafer and the lower wafer is determined based on an internal pressure of a suction tube (STEP S14). Subsequently, the vacuum drawing is conducted to the upper wafer in the upper chuck, and the adequacy of the joining strength of the upper wafer and the lower wafer is determined based on the internal pressure of the suction tube (STEP S15). Then, an outer diameter of a superposed wafer is measured, and the adequacy of the joining position of the upper wafer and the lower wafer is determined based on the measurement result (STEP S16). In the STEP 16, when the measurement result is smaller than a threshold value, it is determined that the joining position is normal. When the measurement result is equal to or larger than the threshold value, it is determined that the joining position is abnormal.
摘要翻译：要解决的问题：检查基板的接合质量，并在接合基板之后平稳地进行加工。解决方案：将上晶片和下晶片接合（步骤S1至S13）。然后，在上卡盘中对上晶片进行真空拉拔，并且基于吸管的内部压力来确定上晶片和下晶片的接合质量是否合适（步骤S14）。随后，对上卡盘中的上晶片进行真空拉拔，并且基于吸管的内部压力确定上晶片和下晶片的接合强度的适当性（步骤S15）。然后，测量重叠晶片的外径，并且基于测量结果确定上晶片和下晶片的接合位置的适当性（步骤S16）。在步骤16中，当测量结果小于阈值时，确定接合位置正常。当测量结果等于或大于阈值时，确定接合位置异常。版权所有（C）2012，JPO＆INPIT

44. 发明专利

JP2012175043A Joining device, joining system, joining method, program and computer storage medium 审中-公开
标题翻译：加工设备，加工系统，加工方法，程序和计算机存储介质
公开(公告)号：JP2012175043A
公开(公告)日：2012-09-10
申请号：JP2011038354
申请日：2011-02-24
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： HIROSE KEIZO , KITAHARA SHIGENORI
IPC分类号： H01L21/02 , H01L21/683
CPC分类号： H01L21/67092 , H01L21/6715 , H01L21/67748 , H01L21/681 , H01L21/6838 , H01L21/68742
摘要： PROBLEM TO BE SOLVED: To appropriately and efficiently join substrates with each other while suppressing generation of a void between the substrates.SOLUTION: A joining device includes: an upper chuck 230 for sucking and holding an upper wafer Won a lower surface; and a lower chuck 231 provided below the upper chuck 230, for mounting, sucking and holding a lower wafer Won an upper surface. The upper chuck 230 is provided with a pushing member 250 for pressurizing a center part of the upper wafer W. The upper chuck 230 is sectioned into a plurality of regions 230a, 230b and 230c from a center part to an outer peripheral part, and vacuum drawing of the upper wafer Wcan be set for each of the regions 230a, 230b and 230c. On an outer peripheral part of the lower chuck 231, a stopper member 262 for the wafers Wand Wand a piled wafer Wis provided.
摘要翻译：要解决的问题：为了适当且有效地将基板彼此接合，同时抑制基板之间的空隙的产生。解决方案：接合装置包括：用于在下表面上吸附和保持上晶片W U 的上卡盘230; 以及设置在上卡盘230的下方的用于安装，吸附和保持下表面上的下晶片W L 的下卡盘231。上卡盘230设置有用于对上晶片W U 的中心部分进行加压的推动构件250。上卡盘230从中心部分到外周部分分为多个区域230a，230b和230c，并且可以设置上晶片W U 的真空拉拔对于区域230a，230b和230c中的每一个。在下卡盘231的外周部分上设有用于晶片W U 和W L 的止动构件262，提供了晶片W T 。版权所有（C）2012，JPO＆INPIT

45. 发明专利

JP2001308080A PLASMA PROCESSING APPARATUS 失效
公开(公告)号：JP2001308080A
公开(公告)日：2001-11-02
申请号：JP2001077749
申请日：2001-03-19
申请人： TOKYO ELECTRON LTD
发明人： IMAFUKU KOSUKE , ENDO NORISUKE , TAWARA KAZUHIRO , TSUCHIYA HIROSHI , TOMOYASU MASAYUKI , NAITO YUKIO , NAGASEKI KAZUYA , NONAKA TATSU , HIROSE KEIZO , FUKAZAWA YOSHIO , KOSHIISHI AKIRA , KOBAYASHI ISAO
IPC分类号： H05H1/46 , H01L21/302 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To realize a high-density plasma by confining a plasma in a space between electrodes without diffusing it in a processing chamber. SOLUTION: The plasma processing apparatus for processing a work on a susceptor in a process chamber with a plasma generated by a high-frequency power in the process chamber, comprises a first annular magnetic field forming means disposed concentrically to the susceptor around the vicinity of the susceptor, and a second magnetic field forming means composed of a permanent magnet 72 is disposed facing the first magnetic field forming means via a gap with a magnetic member 75 attached to a permanent magnet 72.

46. 发明专利

JPH11176789A WASHING SYSTEM 失效
公开(公告)号：JPH11176789A
公开(公告)日：1999-07-02
申请号：JP36355197
申请日：1997-12-15
申请人： TOKYO ELECTRON LTD
发明人： KONISHI NOBUO , HIROSE KEIZO , SEKIGUCHI KENJI
IPC分类号： H01L21/304
摘要： PROBLEM TO BE SOLVED: To make the overall cleaning system small and to reduce the cleaning processing time when the front side and the rear side of a substrate such as a semiconductor wafer are cleaned. SOLUTION: A circumferential ridge of a wafer W is supported by an upper support formed to an upper rotary body 2 and a lower support formed to a lower rotary body 3 by pressing the wafer W from both the upper and the lower sides, the torque of a motor 44 placed at the outside of the lower rotary body 3 is delivered the lower rotary body 3 via a belt 45 for driving the rotary bodies 2, 3 around a vertical shaft. Cleaning brushes 51, 52 that clean the front side and the rear side of the wafer W and nozzles 61, 62 that supply a cleaning liquid to the front side and the rear side of the wafer W are provided. Sliding the wafer W and the cleaning brushes 51, 52 at the same time clean both the front side and the rear side of the wafer W. Since two cleaning parts and inverting parts required for a conventional system becomes unnecessary the overall system is made small in size and the number of processes of the system is reduced, so that the processing time is shortened.

47. 发明专利

JPH11168041A METHOD FOR FORMING RESIST FILM 失效
公开(公告)号：JPH11168041A
公开(公告)日：1999-06-22
申请号：JP35237197
申请日：1997-12-04
申请人： TOKYO ELECTRON LTD
发明人： KONISHI NOBUO , HIROSE KEIZO
IPC分类号： H01L21/027 , G03F7/16 , G03F7/26
摘要： PROBLEM TO BE SOLVED: To reduce the thickness of a resist film to 0.5 μm by forming the resist film on a substrate and then removing the surface of the resist film. SOLUTION: A chemically amplified resist film 3 is formed on a substrate 2, for example, by a spin coating method, is coated with an acid solution on the surface, and then is heated. The resist film 3 is used which has such a characteristics that when the resist film is heated in the presence of an acid component, the acid component is diffused to make the resist film soluble in alkali solution by acid catalysis. Therefore, a surface 31 of the resist film 3 is removed by heating the substrate 2 followed by the application of an alkali solution to the surface of the resist film 3.

48. 发明专利

JPH08148295A PLASMA TREATMENT APPARATUS 失效
公开(公告)号：JPH08148295A
公开(公告)日：1996-06-07
申请号：JP30831094
申请日：1994-11-17
申请人： TOKYO ELECTRON LTD
发明人： HIROSE KEIZO , NAGASEKI KAZUYA
IPC分类号： H05H1/46 , C23F4/00 , H01L21/302 , H01L21/3065
摘要： PURPOSE: To suppress diffusion of plasma while employing an apparatus with a relatively simple and parallel flat plate-type apparatus structure, improve the electric power in order to obtain plasma with high and prescribed plasma density, and prevent deposits from adhering to members in a treatment container at the time when highly fine treatment by plasma is carried out. CONSTITUTION: A plasma leakage preventing body 51 which is set at the same potential as that of the inner wall of a treatment container 2 and in which a large number of through holes are formed is installed at the position lower than a wafer W on a susceptor 5 and upper than a gas discharging outlet 41 formed in the treatment container 2 to cover the upper part of the surrounding space of the susceptor 5. The size of the through holes is controlled to be narrow enough for plasma not to pass. Since plasma in the treatment container 2 does not diffuse to the lower part of the plasma leakage preventing body 51, the density of the plasma is improved by that degree and deposites do not adhere to the gas discharging outlet 41.

49. 发明专利

JPH03295143A ELECTRON GENERATING DISCHARGE CATHODE 失效
公开(公告)号：JPH03295143A
公开(公告)日：1991-12-26
申请号：JP9726390
申请日：1990-04-12
申请人： TOKYO ELECTRON LTD
发明人： HIROSE KEIZO
IPC分类号： H01J37/06 , H01J37/08 , H01J37/30 , H01L21/027 , H01L21/302 , H01L21/3065
摘要： PURPOSE:To reduce the electrical and thermal resistance between an auxiliary electrode and a hot cathode, prevent the deterioration of the hot cathode, and obtain a long life by providing a mechanism holding the hot cathode and the auxiliary electrode together in the pressed state. CONSTITUTION:An electron generating discharge cathode 11 is removably fixed at nearly the center of a disk-shaped cathode holding flange 22 provided at one end section of a vacuum chamber 21 in an electron beam excitation plasma generator. A hot cathode 17 is held by a hot cathode holder 18 in the pressed state to the flange section 14 of the auxiliary electrode 13, thus the electrical and thermal resistance between the hot cathode 17 and the auxiliary electrode 13 is reduced, the auxiliary electrode 13 is efficiently heated, and the potential difference between them is reduced. The electric discharge by the auxiliary electrode 13 is suppressed, its ablation is suppressed, thus the material scattered from the auxiliary electrode 13 can be prevented from being stuck to the hot cathode 17 and impairing the function of the hot cathode 17.

50. 发明专利

JPH02244624A PLASMA PROCESSOR 失效
公开(公告)号：JPH02244624A
公开(公告)日：1990-09-28
申请号：JP6462789
申请日：1989-03-16
申请人： TOKYO ELECTRON LTD
发明人： KOIZUMI KOJI , HIROSE KEIZO , NISHIMURA TOSHIHARU
IPC分类号： C23F4/00 , H01L21/302 , H01L21/3065
摘要： PURPOSE:To restrain the gas flow deterioration the in-surface evenness from running by a method wherein, when reactive gas flow is fed to the processed surface of a processed body for a plasma processing, the gas flow rate at the peripheral part is changed compared with that at the central part. CONSTITUTION:In order to plasma-each a processed body, the gas flow rate at the central part is differentiated from that at the peripheral part of the processed body. Besides, the opening distribution of a gas passing electrode is decreased in the central part but increased in the peripheral part so that the gas flow near the surface of the processed body may be stagnated to reduce the difference in the gas density. Otherwise, the gas flow rate in a vacuum chamber (b) is reduced to diffuse the gas in the whole region for equalizing the gas level. Anyhow, either the etching rate or the deposition rate is made even in the surface. In the concrete, a seal is provided on the central part of an opening part 2a of a grid 2 so that the opening distribution of an upper electrode 1 provided in the vacuum chamber (b) or the openings 16, 2a of the grid 2 may be decreased in the central part but increased in the peripheral part. Furthermore, a diffusion board 20 to decrease the gas flow rate is provided on a gas leading-in port 1a.

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