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41. 发明专利

JP2003098111A METHOD FOR INSPECTING DEFECT AND APPARATUS THEREFOR 审中-公开
公开(公告)号：JP2003098111A
公开(公告)日：2003-04-03
申请号：JP2001288013
申请日：2001-09-21
申请人： HITACHI LTD , HITACHI ELECTR ENG
发明人： NISHIYAMA HIDETOSHI , NOGUCHI MINORU , OSHIMA YOSHIMASA , HAMAMATSU REI , WATANABE KENJI , WATANABE TETSUYA , JINGU TAKAHIRO
IPC分类号： G01B11/30 , G01B11/24 , G01N21/956 , G06T1/00 , G06T7/60 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To solve the problem that it takes an enormous amount of time to analyze detected foreign objects when the number of detected objects by an inspecting apparatus is large, leading to a delay in taking countermeasures against failures of a manufacturing process while a total number of detected objects is outputted as the detected result of the foreign object defect-inspecting apparatus and the countermeasure against failures of the manufacturing process is taken by analyzing foreign objects/defects detected by the inspecting apparatus conventionally. SOLUTION: In the defect inspecting apparatus which inspects by an optical system, failure causes are related to sizes of foreign objects or defects in the result, and a data processing means points out the failure cause from statistics of the inspection result and displays information on the inspection result. A threshold where a semiconductor wafer or the like becomes defective is set for each region of the semiconductor wafer or the like, and a defect analysis is carried out by statistically evaluating foreign objects.

42. 发明专利

JP2003067275A Access destination input program and access destination input device 有权
标题翻译：访问目的地输入程序和访问目的地输入设备
公开(公告)号：JP2003067275A
公开(公告)日：2003-03-07
申请号：JP2001255455
申请日：2001-08-27
申请人： Dainippon Printing Co Ltd , Hitachi Ltd , 大日本印刷株式会社 , 株式会社日立製作所
发明人： ANDO KAZUNORI , UENO TOMOICHI , WATANABE KENJI , MASUDA TOSHIO , OSHIMA TOSHIYOSHI , KITAYAMA TAKUO
IPC分类号： G06K7/00 , G06F13/00
摘要： PROBLEM TO BE SOLVED: To provide a system which reads two dimensional codes by a two dimensional code reader, and can connect to an communication address such as a URL from a communication terminal machine such as a personal computer connected to the Internet, wherein the two dimensional code does not include a direct communication address.
SOLUTION: In this system, an identification code and a local address are used and the two dimensional code does not include a communication address such as a URL and two dimensional code reader and two dimensional codes are limitedly available. It is made possible to discriminate the access to the communication address by reading two-dimensional codes with a two dimensional code reader and the access to the communication address by operation of keyboard, etc., of a personal computer.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：提供一种通过二维码读取器读取二维码的系统，并且可以连接到诸如连接到因特网的个人计算机的通信终端机的诸如URL的通信地址，其中两个二维码不包括直接通信地址。解决方案：在该系统中，使用识别码和本地地址，并且二维码不包括诸如URL和二维码阅读器的通信地址，并且二维码有限地可用。通过用二维码读取器读取二维码和通过操作个人计算机的键盘等访问通信地址，可以区分对通信地址的访问。

43. 发明专利

JP2002138928A IDLE REVOLUTION CONTROL DEVICE FOR INTERNAL COMBUSTION ENGINE 失效
公开(公告)号：JP2002138928A
公开(公告)日：2002-05-17
申请号：JP2000339612
申请日：2000-11-07
申请人： HITACHI LTD , HITACHI CAR ENG CO LTD
发明人： SAEKI HIROAKI , WATANABE KENJI
IPC分类号： F02M69/32 , F02M3/07 , F16K31/06
摘要： PROBLEM TO BE SOLVED: To provide an idle revolution control device for an internal combustion engine improved in stability of fluid control. SOLUTION: A guide plate 14 comprises a cylindrical guiding part 14d adapted to hold a shaft 5 that moves forward/backward axially by a solenoid part 16, and a spigot joint part 14c formed coaxially with the cylindrical guiding part 14d for having a cylindrical protrusion guiding part 24b of a solenoid coil 24 of the solenoid part 16 fitted with the spigot joint part 14c to hold the solenoid part 16. Thereby coaxial accuracy of the shaft 5 and the solenoid part 16 is improved for improving stability of fluid control.

44. 发明专利

JP2001230289A FAULT ANALYZING METHOD AND SYSTEM 失效
公开(公告)号：JP2001230289A
公开(公告)日：2001-08-24
申请号：JP2000036894
申请日：2000-02-15
申请人： HITACHI LTD
发明人： SHIMODA ATSUSHI , ISHIMARU ICHIRO , TAKAGI YUJI , TAMURA TAKUO , HAMAMURA YUICHI , WATANABE KENJI , OZAWA YASUHIKO , ISOGAI SHIZUSHI
IPC分类号： G01N21/88 , G01N21/94 , G06T7/00 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To detect a critical defect of a testing object previously in a productive step. SOLUTION: The fault analyzing method includes a step for storing a defective position by detecting the defect of the testing object in the productive step, a step for gathering detail information about the defect and storing the relation of the defective position and the information, a step for storing the fault generating position in the final test of the testing object, a step for comparing the defective position and the fault generating position, and a step for displaying classified detail information on the basis of compared result.

45. 发明专利

JP2001003705A CLEANING METHOD AND APPARATUS FOR AIR COOLING HOLE FOR GAS TURBINE BLADE ELECTROCHEMICAL MACHINING 失效
公开(公告)号：JP2001003705A
公开(公告)日：2001-01-09
申请号：JP16997599
申请日：1999-06-16
申请人： HITACHI LTD
发明人： WATANABE KENJI , MATSUYAMA YASUHIKO , TOYOMI KEIJI
IPC分类号： B23H3/00 , B23H9/10 , F01D5/18 , F01D5/28 , F01D9/02
摘要： PROBLEM TO BE SOLVED: To remove sludge (Cr2O3/NiO) without any influence on a base material by utilizing decomposition reaction by supplying gaseous hydrogen fluoride into an air cooling hole of a gas turbine blade formed of a heat resisting alloy material having the base material of a cobalt base alloy or a nickel base alloy and containing chrome(Cr) more than designated. SOLUTION: As apparent from the standard generation free energy ΔG, Cr2O3 or NiO remaining on the inner wall surface of an air cooling hole is liable to cause a decomposition reaction (3HF+1/2 Cr2O3=CrF3+3/2 H2O, 3HF+NiO=NiF2+H2O) with a temperature rise. When ΔG is a negative value (under 600 deg.C), the reaction is stopped or reverse reaction is caused. On the other hand, since the heat resisting cobalt base or nickel base alloy material which is the base material of a gas turbine blade has a solution temperature of 1100 to 1150 deg.C, the temperature for causing the decomposition reaction is held below 1100 deg.C. When gaseous hydrogen fluoride is supplied into the air cooling hole of the gas turbine blade heated to 600 to 1000 deg.C, the decomposition reaction occurs to thereby discharge sludge as reaction product (CrF3/NiF3) and water vapor (H2O) to the outside.

46. 发明专利

JP2000314710A INSPECTION METHOD AND DEVICE FOR CIRCUIT PATTERN 失效
公开(公告)号：JP2000314710A
公开(公告)日：2000-11-14
申请号：JP12256599
申请日：1999-04-28
申请人： HITACHI LTD
发明人： NOZOE MARI , SHINADA HIROYUKI , WATANABE KENJI , SAEKI KEIICHI , SUGIMOTO ARITOSHI , MORIOKA HIROSHI , TANAKA MAKI , MIYAI YASUSHI
IPC分类号： G01R31/302 , G01Q30/04 , G01Q30/20 , G01R31/307 , G09G3/00 , G01N23/225 , G01B15/00 , G01R1/06 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To enable examination under an optimum condition without delaying an inspection time by obtaining an optimum irradiation condition of an electron beam according to a material or a structure of a circuit pattern to be examined, and the kinds of the defects to be detected. SOLUTION: In this device, an electron beam 19 is applied to a sample substrate 9, a secondary electron generated therein is detected by a detection part 7, an obtained signal is memorized in order in a memory device, an equal pattern memorized in a memory device is compared in a comparison calculation part, and defects are extracted by comparing a comparison signal with a prescribed threshold value in a defect determination part. An optimum value of an irradiation energy is registered beforehand in a database of a device according to a structure of a sample, a recommended value of an irradiation energy suitable for an examination is looked up by that a user inputs or selects an irradiation energy or by that information about the structure of an object to be examined is inputted. By using the inspection method, an image of a part in which defects are detected is automatically preserved in concurrence with that a substrate having a circuit pattern is examined. By using a preserved image, a classification of the defects is made possible in concurrence with an inspection or separately with an inspection.

47. 发明专利

JP2000277177A SECONDARY BATTERY MODULE 失效
公开(公告)号：JP2000277177A
公开(公告)日：2000-10-06
申请号：JP8536399
申请日：1999-03-29
申请人： HITACHI LTD , TOKYO ELECTRIC POWER CO
发明人： HIRANUMA TAKESHI , TOKOI HIROMI , WATABIKI NAOHISA , WATANABE KENJI
IPC分类号： H05K7/20 , H01M10/60 , H01M10/613 , H01M10/6551 , H01M10/6552 , H01M10/6562 , H01M10/6563 , H01M10/6567 , H01M10/6569 , H01M10/658 , H01M10/50
摘要： PROBLEM TO BE SOLVED: To provide a secondary battery module structure capable of maintaining energy efficiency and varying the amount of heat radiation. SOLUTION: In this secondary battery module using a heat insulating container 2 and a variable conductance type heat pipe 3 containing a non- condensable gas, a selector valve 7 is provided between the heat radiating part 5 and the gas reservoir part 6 of a VCHP. When the heat pipe 3 radiated heat, the selector valve 7 is closed to confine the non-condensable gas in the gas reservoir part 6. Thus, the heat radiation starting temperature of the VCHP is lowered as the result of a reduction in the amount of non-condensable gas in the heat radiating part of the VCHP.

48. 发明专利

JP2000155099A METHOD AND DEVICE FOR OBSERVATION OF SAMPLE SURFACE, METHOD AND DEVICE FOR FLAW INSPECTION 失效
公开(公告)号：JP2000155099A
公开(公告)日：2000-06-06
申请号：JP26314999
申请日：1999-09-17
申请人： HITACHI LTD
发明人： SHIBATA YUKIHIRO , MAEDA SHUNJI , YAMAGUCHI KAZUO , YOSHIDA MINORU , YOSHIDA ATSUSHI , NINOMIYA TAKANORI , MATSUI SHIGERU , OKA KENJI , WATANABE KENJI
IPC分类号： G01N21/88 , G01N21/956 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To detect a minute flaw by means of a high-resolution image by irradiating a sample with polarized light, detecting its reflected light for computing a positional deviation of a focal point in the optical axis, and detecting reflected light from the sample surface adjusted in height. SOLUTION: A light beam polarized through a polarizing plate 14 is applied to a sample 1 via an objective lens 20, and then, reflected, and diffracted so as to be incident on the objective lens 20 again, and then, the light beam is reflected by a half mirror 15 so as to be incident on a polarizing plate 22 for forming an image of the sample 1 in an image sensor 70 via an image forming lens 30 and a zoom lens 50. A focal point detection light beam forms an optical image having height information of the sample 1 on a sensor 41 through an image forming lens 40, and its output signal is inputted to a focal point detection signal processing circuit 90. The processing circuit 90 detects a height of the sample 1 and a deviation of a focal point position of the lens 20 so as to feed them to a CPU 75 for giving a driving command for a Z stage 4. Image data of the sample 1 detected by the image sensor 70 are stored and processed in an image processing circuit 71, and a flaw determination circuit 72 determines a defective part.

49. 发明专利

JP2000030652A OBSERVATION OF SAMPLE AND DEVICE THEREOF 失效
公开(公告)号：JP2000030652A
公开(公告)日：2000-01-28
申请号：JP19534598
申请日：1998-07-10
申请人： HITACHI LTD
发明人： OBARA KENJI , TAKAGI YUJI , SHIMODA ATSUSHI , NAKAGAKI AKIRA , ISOGAI SHIZUSHI , OZAWA YASUHIKO , BABA HIDEHARU , WATANABE KENJI , SHISHIDO CHIE
IPC分类号： G01N23/225 , G01N21/956 , H01J37/22 , H01J37/28 , H01L21/66 , H04N5/335
摘要： PROBLEM TO BE SOLVED: To reduce moving quantity of a sample stage so as to efficiently observe a defect in a short time by indicating an image provided by picking up image of a desired area of a sample on a first screen, magnifying and picking up the image while designating an area including a defect in the image, and providing an expanded image of the defect. SOLUTION: A sample on a sample stage is arranged on the basis of defect information previously provided by means of a surface inspection device, and its image is picked up by means of a scanning electron microscope. Firstly, an area including no defect is picked up, and a reference image 8 based on a first magnification is provided. Secondarily, the stage is moved and an area including a defect is picked up at the same magnification as the reference image 8, and then, a first defect image 9 is provided. Position matching between the reference image 8 and the defect image 9 is carried out by means of a template matching and the like, a difference area between both images is detected, and a defect position 10 in the defect image 9 is set. Subsequently, a designated vision area 12 including the defect position 10 is picked up at expanding magnification, and a magnified second defect image 11 is provided. Consequently, a condition of the defect can be surely observed in detail.

50. 发明专利

JPH11168126A MANUFACTURE OF ELECTRONIC DEVICE AND FOREIGN SUBSTANCE ANYALYZER THEREOF 失效
公开(公告)号：JPH11168126A
公开(公告)日：1999-06-22
申请号：JP33266597
申请日：1997-12-03
申请人： HITACHI LTD
发明人： IBE HIDEFUMI , WATANABE KENJI , SHIMASE AKIRA , SHIBA MASATAKA , SAKAMOTO TSUTOMU
IPC分类号： G01B15/00 , G01B15/08 , G01N23/225 , G01N23/227 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To specify the cause of generation of a foreign substance on a semiconductor device and a failure of the device due to the foreign substance in a short time, by a method wherein the section of the foreign substance on the device is made to expose and the section of the foreign substance, and constituent elements and structure of a film adjacent to the foreign substance are specified. SOLUTION: While section of a foreign substance is verified by an SEH, a foreign substance section 6 and the structure of a film on the periphery of the section 6 are made to expose by an FIB. An analysis of the elements on a line 9 including the foreign substance 6 and the films 7 and 8 above and below the substance 6 is made by an AES and the constituent elements of the substance 6 and the components of the films 7 and 8 above and below the substance 6 are measured. In this way, since the materials constituting the films 7 and 8 above and below the substance 6, the thicknesses of the films 7 and 8 and the like are known, a process of the generation of the foreign substance is known by associating the materials, the thicknesses and the like with the production process of a product recorded with the materials used for the product and a film-forming thickness. A device used in a process to correspond to the record of the history of a wafer can be specified from the record and the operation conditions of the device and the like are also known. Accordingly, as it becomes possible to analyze a failure of a high-integration degree semiconductor device due to the foreign substance on the device in a short time, a rise of the production line of the device in a short period becomes possible.

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