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1. 发明专利

JP2009053197A Pattern inspection method and apparatus 有权
标题翻译：模式检验方法和装置
公开(公告)号：JP2009053197A
公开(公告)日：2009-03-12
申请号：JP2008234197
申请日：2008-09-12
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： HIROI TAKASHI , WATANABE MASAHIRO , SHISHIDO CHIE , SUGIMOTO ARITOSHI , TANAKA MAKI , MIYAI YASUSHI , KUNI TOMOHIRO , NARA YASUHIKO
IPC分类号： G01N21/956 , G01B15/04 , G01N23/225 , G06T1/00
摘要： PROBLEM TO BE SOLVED: To detect images without detection image errors due to the effects of ions implanted to wafers, the presence of pattern connections, the shapes of pattern edges, etc. SOLUTION: In a pattern inspection method, an object substrate is imaged to acquire its digital images. The digital images are used to mask patterns matched with a region previously registered on the basis of coordinate data or patterns matched with a pre-registered pattern, detect defects, and display detected defects. In the pattern inspection method, an object substrate is imaged to acquire its digital images. The digital images are used to detect defects. Defects matched with registered characteristics among detected defects are changed over between display and non-display or displayed in such a way as to be distinguishable from others. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：由于植入晶片的离子的影响，图案连接的存在，图案边缘的形状等，检测图像而不检测图像误差。解决方案：在图案检查方法中，成像对象基板以获取其数字图像。数字图像用于掩蔽与先前根据与预先注册的图案匹配的坐标数据或图案预先注册的区域匹配的图案，检测缺陷并显示检测到的缺陷。在图案检查方法中，成像对象基板以获取其数字图像。数字图像用于检测缺陷。在检测到的缺陷之间与注册特征匹配的缺陷在显示和非显示之间进行切换，或以与其他方式区分的方式显示。版权所有（C）2009，JPO＆INPIT

2. 发明专利

JP2002014062A METHOD AND APPARATUS FOR CHECKING PATTERN 失效
公开(公告)号：JP2002014062A
公开(公告)日：2002-01-18
申请号：JP2000203056
申请日：2000-06-30
申请人： HITACHI LTD
发明人： WATANABE MASAHIRO , TANAKA MAKI , HIROI TAKASHI , SHISHIDO CHIE , MIYAI YASUSHI , WATANABE KENJI , SUGIMOTO ARITOSHI , KUNI TOMOHIRO , NOZOE MARI
IPC分类号： G01B15/00 , G01B15/04 , G01N23/225 , G06T1/00 , G06T7/00 , H01L21/66 , H05K3/00
摘要： PROBLEM TO BE SOLVED: To solve such problem in the conventional method and apparatus has been no that there method for rapidly sorting defects having a littlie damage to an object based on the electrical properties of the detected defect in checking the pattern for detecting the defect by comparing an image to be checked with a reference image. SOLUTION: The method for checking the pattern comprises calculating the feature amount of a defect which includes the signal amount of a charged particle beam image of the defect, simultaneously or concurrently upon checking, and immediately sorting the defects based on the electrical properties of the defects.

3. 发明专利

JPH11201909A METHOD AND DEVICE FOR INSPECTING FOREIGN MATTER 失效
公开(公告)号：JPH11201909A
公开(公告)日：1999-07-30
申请号：JP662098
申请日：1998-01-16
申请人： HITACHI LTD , HITACHI ELECTR ENG
发明人： INOUE HIROKO , IKODA MASAMI , OOGAYA KAORU , TAGUCHI JUNICHI , SUGIMOTO ARITOSHI
IPC分类号： G01N21/88 , G01N21/93 , G01N21/94 , G01N21/956 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To improve reliability in foreign matter detection by reducing the occurrence of blooming in foreign matter detection. SOLUTION: A foreign matter inspecting device is formed of a stage 7 to support a semiconductor wafer 1, an optical system 6 with a light source 5 to irradiate the semiconductor wafer 1 with laser light 4, a diffracted light blocking filter 13 in which a blocking film corresponding to a pattern 3 on the semiconductor wafer 1 is formed, a beam splitter 11 to split reflected light 8 from the semiconductor wafer 1 into two, an ND fitter 12 to adjust the amount of light of one of the reflected light 8 after splitting to enter TDI sensors 9, the two TDI sensors 9 to detect two reflected light 8 after splitting, an adding circuit 10 to add the signals of the two reflected light 8 detected by the two TDI sensors 9, and a differential circuit 16 and a comparing circuit 17 to compare the addition signal by the adding circuit 10 with a reference signal registered in advance and to determine that the reflected light 8 is caused by foreign matter 2 in the case that the comparison result exceeds a permissible range.

4. 发明专利

JPH1196959A ULTRAPRECISION PROCESSING DEVICE 失效
公开(公告)号：JPH1196959A
公开(公告)日：1999-04-09
申请号：JP27064497
申请日：1997-09-17
申请人： HITACHI LTD
发明人： SUGIMOTO ARITOSHI , MIURA AKIHIRO , NOZOE MARI
IPC分类号： F24F7/06 , G01Q30/02 , G01Q30/18 , G01Q60/10 , G01Q60/24 , G10K11/16 , H01J37/28 , H01L21/02
摘要： PROBLEM TO BE SOLVED: To prevent an influence of acoustic vibration due to an air conditioner. SOLUTION: A length-measuring SEM 10 is installed on a floor 2 of a clean room 1, and a specimen chamber 12, a lens barrel 13, a loader 14, and a cover 15 are constructed on a pedestal 11. A flow fairing part 20 for preventing a down-blow stream of the clean room 1 from causing turbulence is formed on a top part of the cover 15 covering the lens barrel 13. The cover 15 is constructed to have a double structure of an inner wall 21 and an outer wall 22, and the inner wall 21 and the outer wall 22 are elastically supported by each other via supports 24 formed of elastic material. A sealed space 23 in the cover 25 is decompressed to 1000 Pa or less. With this structure, the flow fairing part can prevent the cover from being vibrated by turbulence. If the outer wall of the cover is vibrated by an air flow or acoustic vibration in the clean room, the vibration of the outer wall can be prevented from coming across to the inner wall. Because vibration can be prevented from coming across to the lens barrel in the cover, length measuring accuracy of the length- measuring SEM can be enhanced.

5. 发明专利

JPH10294345A METHOD OF INSPECTING CIRCUIT PATTERN AND INSPECTING INSTRUMENT 失效
公开(公告)号：JPH10294345A
公开(公告)日：1998-11-04
申请号：JP4523497
申请日：1997-02-28
申请人： HITACHI LTD
发明人： NOZOE MARI , SHINADA HIROYUKI , SUGIYAMA KATSUYA , TAKATO ATSUKO , HIROI TAKASHI , YOSHIMURA KAZUSHI , SUGIMOTO ARITOSHI , YODA HARUO , KURODA KATSUHIRO , USAMI YASUTSUGU , TANAKA MAKI , KANEKO YUTAKA , TOYAMA HIROSHI , INO TADAO , YAJIMA YUSUKE , ANDO MASAAKI , MAEDA SHUNJI , KUBOTA HITOSHI
IPC分类号： G01B15/00 , G01B15/08 , G01N23/225 , G01R31/302 , G02F1/136 , H01J37/20 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To provide a method of speedily, accurately and stably inspecting a circuit pattern having insulation materials by detecting defects, foreign matters, residue, and the like of the circuit pattern on the substrate of a semiconductor device or the like by irradiating the wafer with an electron beam and comparing the secondary electron image. SOLUTION: An electron beam image is formed before the electrical potential of the circuit pattern materials varies by speedily irradiating a wafer 9 to be inspected with an electron beam 19 of a large amount of current only once or several times. In addition to the first electron beam used to form the image inspected, a second changed particle beam 104 is projected onto the wafer 9 and the inspection is conducted after the electrical potential of the circuit pattern material is stabilized. An electron beam image of high S/N ratio and high quality can be effectively formed by digitizing the secondary electron inspection signal and transferring the digital signal. The method and the inspecting instrument make it possible to inspect the circuit pattern having insulation materials, detect defects and abnormality generated during manufacturing process of various types of wafers such as for a semiconductor device, which are conventionally undetectable by a prior technology, lower the fraction defective, and improve the reliability of the manufacturing process of a wafer.

6. 发明专利

JPH10199790A SEMICONDUCTOR CHIP AND RETICLE FOR MANUFACTURE OF SEMICONDUCTOR 失效
公开(公告)号：JPH10199790A
公开(公告)日：1998-07-31
申请号：JP266897
申请日：1997-01-10
申请人： HITACHI LTD
发明人： TAKAGI YUJI , MATSUYAMA YUKIO , HIROI TAKASHI , TANAKA MAKI , KUNI TOMOHIRO , SUGIMOTO ARITOSHI , AZUMA JUNZO
IPC分类号： G03F1/42 , G03F9/00 , H01L21/027 , H01L21/66 , G03F1/08
摘要： PROBLEM TO BE SOLVED: To registers the images of two chips with high accuracy, by providing register marks in the corresponding positions of each chip on a semiconductor wafer to be inspected or a reticle used for the stepper in exposure process. SOLUTION: The interval D between register marks 17 is made fixed or over so that the register may not be performed, with one phase slipped, at the time of register. This fixed interval depends upon the accuracy within what degree both X-Y coordinates can conform to each other with by the alignment to conform the X-Y coordinate stipulated by the chip made on a semiconductor wafer to be inspected and the X-Y coordinate that the X-Y stage 9 has to each other by means of a rotary stage 10 after loading the X-Y stage 9 with the semiconductor wafer to be inspected. In the case of the inspection of comparison between two chips, there is necessity to eliminate the geometrical distortion from the detected image. This distortion is caused by the astigmatism and coma which affect the focus condition on the object to be inspected of an electron beam, and the maximum distance of the interval D between marks for register comes to 300μm or under.

7. 发明专利

JPH09320505A ELECTRON BEAM TYPE INSPECTING METHOD, DEVICE THEREFOR, MANUFACTURE OF SEMICONDUCTOR, AND ITS MANUFACTURING LINE 失效
公开(公告)号：JPH09320505A
公开(公告)日：1997-12-12
申请号：JP19314396
申请日：1996-07-23
申请人： HITACHI LTD
发明人： HIROI TAKASHI , TANAKA MAKI , WATANABE MASAHIRO , KUNI TOMOHIRO , MATSUYAMA YUKIO , TAKAGI YUJI , SHINADA HIROYUKI , NOZOE MARI , SUGIMOTO ARITOSHI
IPC分类号： G01Q20/00 , G01Q30/04 , G01Q30/02 , G01Q60/00 , H01J37/20 , H01J37/22 , H01J37/256 , H01J37/28 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To detect a fine defect with high reliability at high speed by performing the inspection or measurement for a target from the signal showing the change detected by emitting an electron beam to the target. SOLUTION: A wafer to be actually inspected is loaded, each potential is controlled by a potential control part 23, and a focus point offset is set by a focus position control part 22. The electron beam from an electron beam source 14 is scanned in X-direction by use of a beam deflector 15 by the control of a scanning control part while driving in Y-direction at a prescribed speed by the instruction from a total control part 26, and a continued two-dimensional image signal is detected from a secondary electron detector 16. It is converted into a two-dimensional digital image signal by an A/D converter 24, and stored in the image memory of an image processing part 25. The detected two-dimensional digital image signal is compared with the two-dimensional digital image signal stored in the image memory, and a part different therefrom is judged as a defect, and recorded in a memory within the image processing part 25 or the total control part 26. After the inspection is completed, the wafer is unloaded.

8. 发明专利

JPH08255825A MARK POSITION DETECTING METHOD, SEMICONDUCTOR WAFER USED THEREFOR, AND METHOD AND APPARATUS FOR DETECTING FOREIGN MATTER 失效
公开(公告)号：JPH08255825A
公开(公告)日：1996-10-01
申请号：JP5919795
申请日：1995-03-17
申请人： HITACHI LTD , HITACHI ELECTR ENG
发明人： MOTOMURA NAOYUKI , SUGIMOTO ARITOSHI , NOZOE MARI
IPC分类号： H01L21/68 , H01L21/02
摘要： PURPOSE: To provide a mark position detecting method capable of detecting the position of a detected object or a foreign matter irrespective of the outer shape of a semiconductor wafer, a semiconductor wafer used therefor, and a foreign matter detecting method and a device by the use thereof. CONSTITUTION: A dummy wafer is provided with two marks, a first mark 3 and a second mark 4, separate from each other and located on the peripheral part of its front 1a or rear 1c, wherein the front 1a or the rear 1c is mirror- finished, or a film is formed on the front 1a or the rear 1c through a CVD process. A foreign matter 2 or a detected object attached to the front 1a or the rear is detected by a dummy wafer.

9. 发明专利

JPH04269749A PHOTOMASK AND ITS MANUFACTURE 失效
公开(公告)号：JPH04269749A
公开(公告)日：1992-09-25
申请号：JP3084691
申请日：1991-02-26
申请人： HITACHI LTD
发明人： NOZAKI KATSUHIRO , KATO TAKESHI , SUGIMOTO ARITOSHI
IPC分类号： G03F1/30 , G03F1/68 , G03F1/80 , H01L21/027
摘要： PURPOSE:To improve the accuracy of pattern transfer of a photomask for phase shift by constituting the phase shifter of a material having low refractive index. CONSTITUTION:A photomask M1 for phase shift has a phase shifter 2 comprising low-refractive index material such as fluorine-contained resin or the like. The phase shifter 2 is formed by applying a fluorine-contained resin on the surface of the photomask M1 by spin coating and then etching the resin.

10. 发明专利

JPH0250420A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH0250420A
公开(公告)日：1990-02-20
申请号：JP19984588
申请日：1988-08-12
申请人： HITACHI LTD
发明人： SUKOU KAZUYUKI , SUGIMOTO ARITOSHI , NAGAO MAKI
IPC分类号： H01L21/265
摘要： PURPOSE:To effectively prevent a break of an integrated circuit element due to electric charge stored in a resist pattern at the time of ion implanting by coating the whole surface of a wafer, wherein a resist pattern is formed, with a conductive polymer followed by implanting impurity ions on the wafer surface and earthing the conductive polymer. CONSTITUTION:After the whole surface of a wafer, wherein a resist pattern is 3 formed, is coated with a conductive polymer 4, or after the resistor pattern 3 is formed on the wafer surface previously over-all coated with a conductive polymer 4, impurity ions are implanted on the wafer surface and the conductive polymer 4 is earthed. Accordingly, electric charge implanted in the resist pattern 3 is discharged to the earth through the conductive polymer 4. Thereby, at the time of implantation electric charge is surely prevented from being stored in the resist pattern 3 so that a break of an integrated circuit element due to this electric charge can be effectively prevented.

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