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41. 发明专利

JP2011155715A Rotating electric machine 有权
标题翻译：旋转电机
公开(公告)号：JP2011155715A
公开(公告)日：2011-08-11
申请号：JP2010013713
申请日：2010-01-26
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： MORIYAMA TOMOHIRO , HIGASHIMURA YUTAKA , ICHIMURA SATOSHI , ONODA MITSURU , SUZUKI KEIJI
IPC分类号： H02K3/40
摘要： PROBLEM TO BE SOLVED: To provide a rotating electric machine capable of preventing burning loss of a corona shielding layer extending to the outside of a slot of a stator core by a simple means.
SOLUTION: The rotating electric machine has a structure in which a stator coil 7 operated on a voltage having a high frequency component and having a corona shielding layer 14 formed on the surface of a main insulating layer is attached in the slot 6 of the stator core via a slot liner 12, and charging current path ensuring means (13, 17, 18) for ensuring a charging current path are provided between the slot liner 12 of the stator coil 7 extending to the outside of the slot and the corona shielding layer 14. With this configuration, even partial contact occurs between the slot liner 12 and the corona shielding layer 14, a charging current flows to the flow path ensured by the charging current path ensuring means, thereby preventing the burning loss of the corona shielding layer due to concentration of charging current.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：解决的问题：提供一种能够通过简单的手段防止延伸到定子芯的槽的外部的电晕屏蔽层的燃烧损失的旋转电机。解决方案：旋转电机具有这样的结构，其中定子线圈7以高频分量的电压工作，并且在主绝缘层的表面上形成有电晕屏蔽层14，其被安装在通过槽衬套12的定子铁心和用于确保充电电流路径的充电电流路径确保装置（13,17,18）设置在定子线圈7的延伸到槽外部的槽衬套12和电晕通过这种结构，在槽衬垫12和电晕屏蔽层14之间发生均匀的部分接触，充电电流流向由充电电流路径确保装置确保的流路，从而防止电晕屏蔽的燃烧损失层由于充电电流的集中。版权所有（C）2011，JPO＆INPIT

42. 发明专利

JP2003100707A DEVICE AND METHOD FOR PROCESSING NEUTRAL BEAM 审中-公开
公开(公告)号：JP2003100707A
公开(公告)日：2003-04-04
申请号：JP2001295349
申请日：2001-09-27
申请人： HITACHI LTD
发明人： ICHIMURA SATOSHI , TSUCHIYA KAZUTOSHI , SATO TADASHI
IPC分类号： H01L21/302 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To restrict that an object to be processed is electrically charged even if an abnormal discharge or the like is caused between a plurality of electrodes for separating charged particles, in neutral beam processing. SOLUTION: All of a plasma generating chamber wall for defining an ion source, a neutralization chamber wall for defining a neutralization chamber, and a processing chamber wall for defining a processing chamber have conductivity, and their electric potentials are set so that the neutralization chamber wall has negative potentials to the processing chamber wall and the plasma generating chamber wall. An ion extraction electrode for extracting an ion beam from the ion source and a retarding electrode for separating charged particles from the beam in the neutralization chamber and passing the neutral beam are individually composed of a plurality of perforated electrodes. These plurality of perforated electrodes, the plasma generating chamber wall and the neutralization chamber wall are connected to the processing chamber wall. A current caused by the charged particles flown out of the processing chamber wall is measured, and, based on the current, a potential of each wall or each porous electrode is changed.

43. 发明专利

JP2002170515A ION IMPLANTATION METHOD 失效
公开(公告)号：JP2002170515A
公开(公告)日：2002-06-14
申请号：JP2000365767
申请日：2000-11-28
申请人： HITACHI LTD
发明人： ICHIMURA SATOSHI , SEKI TAKAYOSHI , TOKIKUCHI KATSUMI , ITO JUNYA
IPC分类号： C23C14/48 , H01J37/317 , H01L21/265
摘要： PROBLEM TO BE SOLVED: To provide an ion implantation method enabling to lessen a scanning distance by keeping an injection uniformity and moreover to minimize an acceleration of reverse operation in scanning. SOLUTION: The constitution is to decelerate down from the prescribed scanning speed limit after the center of an ion beam misses the base plate, to reverse the direction of the reciprocating motion of an ion beam or the base plate before an ion beam passes through the base plate and moreover to accelerate to the prescribed speed limit before the center of an ion beam enters the base plate. This enables to design the ion implantation equipment smaller because to shorten the scanning distance is possible by keeping the prescribed injection uniformity. Moreover, the composition components of the equipment needed for reverse operation can be smaller in their power outputs because of slower acceleration in reverse operation scanning.

44. 发明专利

JP2001085193A PLASMA PROCESSING DEVICE 失效
公开(公告)号：JP2001085193A
公开(公告)日：2001-03-30
申请号：JP25977399
申请日：1999-09-14
申请人： HITACHI LTD
发明人： SATO TADASHI , TAKEMORI SEI , KIYONO TOMOYUKI , ICHIMURA SATOSHI
IPC分类号： H01L21/302 , C23C16/505 , C23C16/511 , C23F4/00 , H01L21/3065 , H05H1/46
摘要： PROBLEM TO BE SOLVED: To process a substrate without a generated plasma making direct contact with a window. SOLUTION: A window 16 for closing an opening 30 is positioned outside a vacuum vessel 10 and a substrate 34 is positioned inside the window 16 via a substrate holder 14. A high frequency coil 18 and a matching box 20 are positioned outside the window 16 and a high frequency from a high frequency power supply is supplied to the high frequency coil 18 via the matching box 20 to apply an electromagnetic field to a gas to be processed which is introduced into a reaction chamber 22, so as to generate a plasma within a plasma generating area 26 surrounded by a group of magnets 12. The plasma is used either to form a film on the substrate 34 or to etch the substrate 34. Since the substrate 34 is positioned to cover the window 16, decomposition products resulting from production of the plasma can be prevented from accumulating on the window 16, and the plasma density can be increased.

45. 发明专利

JP2000340163A ION BEAM PROCESSING DEVICE 失效
公开(公告)号：JP2000340163A
公开(公告)日：2000-12-08
申请号：JP14764099
申请日：1999-05-27
申请人： HITACHI LTD
发明人： ICHIMURA SATOSHI , TSUCHIYA KAZUTOSHI , SATO TADASHI , OGURA SATOSHI , FUJISAWA TATSUYA
IPC分类号： H01J27/02 , H01J37/08 , H01J37/305
摘要： PROBLEM TO BE SOLVED: To provide an ion beam processing device suppressing neutralizing performances to be deteriorated due to the adhesion of insulative polymerized substances to the surface of a strip electrode 8/or to insulating the strip electrode surface by oxidation and stably operating for a long time. SOLUTION: In this device, a means for heating a strip electrode 8 is provided. A material of the surface of the strip electrode 8 is not to react with the gas to be used, or the vapor pressure value of a reaction product at the strip electrode surface temperature is higher than the pressure of a processing chamber end if reacted, or the reaction product has conductivity. The device and suppress neutralizing performances from being deteriorated due to the adhesion of insulative polymerized substances to the strip electrode surface or insulating the strip electrode surface by oxidation so that it can stably operate for a long time.

46. 发明专利

JP2000113849A ION MILLING DEVICE, ION MILLING METHOD, ION BEAM IRRADIATION DEVICE AND ION BEAM IRRADIATION METHOD 失效
公开(公告)号：JP2000113849A
公开(公告)日：2000-04-21
申请号：JP35471098
申请日：1998-12-14
申请人： READ RITE SMI KK , HITACHI LTD
发明人： MINAMI HIROAKI , ICHIMURA SATOSHI , OISHI SEITARO , MORIYAMA MASAMICHI
IPC分类号： H01J27/02 , H01J37/08 , H01J37/30 , H01J37/305
摘要： PROBLEM TO BE SOLVED: To apply stable ion milling starting from the first substrate without applying pre-milling. SOLUTION: This ion milling device 1 is provided with an extracting electrode 3 extracting the ions in the plasma generated in an ion source chamber 2 as an ion beam and a heater 18 heating the extracting electrode 3. The extracting electrode 3 is slightly curved. The speed and distribution of the ion beam can be stabilized early after the milling device 1 is started. The milling machining of initial several works can be stabilized after the milling device 1 is started or after the process is resumed, and productivity can be improved.

47. 发明专利

JPH08296069A ION-BEAM TREATING DEVICE 失效
公开(公告)号：JPH08296069A
公开(公告)日：1996-11-12
申请号：JP10588495
申请日：1995-04-28
申请人： HITACHI LTD
发明人： ICHIMURA SATOSHI , SATO TADASHI , KOBAYASHI KENZO , OISHI SEITARO , ONUKI HISAO
IPC分类号： H05H1/46 , C23F4/00 , H01J27/16 , H01J27/18 , H01J37/02 , H01J37/08 , H01J37/30 , H01J37/305 , H01L21/302 , H01L21/3065
摘要： PURPOSE: To realize an ion beam with the current increased and having a large diameter. CONSTITUTION: A strip electrode 8 is set at a negative potential with respect to a treating chamber 23 by a DC power source 18 when neutralized plasma is produced, and hence an ion 23 in the neutralized plasma is collected on the electrode 8. Further, the electrons in the same amt. as the collected ion charge are uniformly supplied toward an ion beam. Accordingly, the ion collecting area is increased by collecting the ion on the strip electrode, hence only the neutralized plasma is produced, sufficient ions are surely collected from the plasma, and the sufficient electrons are supplied to the ion beam side.

48. 发明专利

JPH08165560A ELECTRON BEAM-APPLIED FILM FORMING DEVICE 失效
公开(公告)号：JPH08165560A
公开(公告)日：1996-06-25
申请号：JP31020894
申请日：1994-12-14
申请人： HITACHI LTD
发明人： SATO TADASHI , ICHIMURA SATOSHI
IPC分类号： G21K5/04 , C23C14/22 , C23C14/30 , H01J37/077 , H01J37/317
摘要： PURPOSE: To form a film of an alloy on a large-area substrate by arranging permanent magnets around a plasma producing chamber, alternately changing its poles, drawing out an electron beam from the plasam and irradiating the substrate before and after it is coated with a film. CONSTITUTION: Many permanent magnets 3 are arranged on the outer and inner peripheries of a plasma producing vessel 2 so that the magnetic poles are alternately changed on the face of the vessel 2. A DC voltage is impressed between a cathode 1 and the vessel 2, and gaseous hydrogen introduced from an inlet 20 is ionized with the low-atm arc discharge. The electron is drawn out as an electron beam 22 by an electrode consisting of an accelerating electrode 6 pierced with many holes and a decelerating electrode 7. A material 24 in a crucible 23 is heated and melted by the electron beam 22 in an electron- beam vapor-deposition device 21, and the molten material is vaporized to form a vapor-deposited film on a substrate 12. Consequently, a film is collectively formed on a large-area substrate of >=6 to 8 inches.

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