专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JP2011135718A Rotary electric machine 有权
标题翻译：旋转电机
公开(公告)号：JP2011135718A
公开(公告)日：2011-07-07
申请号：JP2009294009
申请日：2009-12-25
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： ICHIMURA SATOSHI , MORIYAMA TOMOHIRO , YAGIHASHI YOSHITOYO , TANAKA KIYOTERU , KOJIMA KEIMEI , HIGASHIMURA YUTAKA
IPC分类号： H02K9/19 , H02K9/18
摘要： PROBLEM TO BE SOLVED: To provide a rotary electric machine that improves insulation performance and cooling efficiency by using both insulating oil and insulating/cooling gas.
SOLUTION: The rotary electric machine has air ducts in a stator core 6 so as to circulate insulating/cooling gas from inner/outer diameter directions. At least either one of a straight-line part 7A, which is incorporated into the stator core 6 of a stator coil 7, and a coil end part 7B, which is projected from the stator core is covered with an oil container 13 or 25. Insulating oil is filled into the oil container 13 or 25.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种通过使用绝缘油和绝缘/冷却气体来提高绝缘性能和冷却效率的旋转电机。解决方案：旋转电机在定子芯6中具有空气导管，以便使内/外径方向的绝缘/冷却气体循环。并入定子线圈7的定子铁芯6的直线部7A和从定子铁芯突出的线圈端部7B中的至少一方被油容器13或25覆盖。绝缘油被装入油箱13或25中。版权所有（C）2011，JPO＆INPIT

2. 发明专利

JP2002170873A TREATMENT SUBSTRATE FOR ELECTROSTATIC CHUCK 失效
公开(公告)号：JP2002170873A
公开(公告)日：2002-06-14
申请号：JP2000368751
申请日：2000-12-04
申请人： HITACHI LTD
发明人： OGURA SATOSHI , ICHIMURA SATOSHI , KUROGANE MASAHARU , SARUTA HIKARI
IPC分类号： B23Q3/15 , B23K15/00 , H01J37/20 , H01L21/68 , H01L21/683
摘要： PROBLEM TO BE SOLVED: To provide a treatment substrate for electrostatic chuck, in which particles does not adhere to a process face 1(1) when processing the process face 1(1) of the treatment substrate 1 by fixedly holding the treatment substrate 1 to the electrostatic chuck using electrostatic chuck type processing equipment. SOLUTION: The treatment substrate for electrostatic chuck, in which one face of the treatment substrate is a process face 1(1), another face of the treatment substrate is an attracting face 1(2), and the attracting face 1(2) is held attracted to the electrostatic chuck substrate 6 by electrostatic chuck means when the process face 1(1) is processed. The treatment substrate 1 is made into a three-layer structure comprising a main treatment substrate material layer 2, a thin metal shield layer 3 adhered to the attracting face 1(2) side of the main treatment substrate material layer 2, which electrostatic shielding the electric power line 13 radiated from the electrostatic chuck substrate 6, and an additional layer 4 comprising a material with conductivity lower than that of the thin metal shield layer 3 adhering to the attracting face 1(2) side of the thin metal shield layer 3.

3. 发明专利

JP2000114240A PLASMA TREATMENT APPARATUS AND PLASMA CONFINEMENT METHOD 失效
公开(公告)号：JP2000114240A
公开(公告)日：2000-04-21
申请号：JP27694998
申请日：1998-09-30
申请人： HITACHI LTD
发明人： KITAZAWA SATOSHI , SEKI HIROBUMI , ICHIMURA SATOSHI , UENO YUICHIRO , UCHIKAWA SADAO , UMEGAKI KIKUO , TAKEMORI SEI
IPC分类号： H01L21/302 , H01L21/205 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To enhance plasma density in a plasma processing region by making the polarities of permanent magnets provided around respective wave guides alternated, thereby efficiently diffusing high-energy electrons. SOLUTION: Permanent magnets 20a-20d with electron cyclotron resonance magnetic field strength are alternatively positioned around microwave waveguides 15a-15d, respectively, such that polarities of the magnets are alternated in the microwave waveguides 15a-15d. Accordingly, since magnetic lines of force originating from electron cyclotron resonance magnetic field near the microwave waveguides 15a-15d reach a local electron heating region near the adjacent microwave waveguides 15a-15d without impinging on the sidewall of a plasma production chamber, cusp-type magnetic lines of force is formed passing near the center of the plasma production chamber. Consequently, since the high-energy electrons produced in the respective electron heating regions are diffused in the direction of the center of the plasma generation chamber along cusp-type magnetic line of force, high density plasma is produced efficiently.

4. 发明专利

JPH10335096A PLASMA PROCESSING DEVICE 失效
公开(公告)号：JPH10335096A
公开(公告)日：1998-12-18
申请号：JP14489697
申请日：1997-06-03
申请人： HITACHI LTD
发明人： SEKI HIROBUMI , ICHIMURA SATOSHI , TAKEMORI SEI , SETOYAMA HIDETSUGU , ISHIGURO KOJI , MOCHIZUKI YASUHIRO , OKADA NOBUSUKE , MURAKAMI HAJIME
IPC分类号： H05H1/46 , C23C16/50 , C23C16/511 , C23F4/00 , H01J37/32 , H01L21/205 , H01L21/302 , H01L21/3065 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To easily generate the plasma at a high density by arranging a dielectric, which is to be arranged in a waveguide unit and which transmits the micro wave and which maintains the vacuum, so as to transverse the electron cyclotron resonance area inside the waveguide unit. SOLUTION: When the micro wave enters a plasma generating chamber through a waveguide unit 3a, electron is locally generated for heating in a magnetic field stronger than an electron cyclotron resonance magnetic field of an end surface of a dielectric 16a, and the electron collides with the gas so as to generate the plasma. Namely, since a narrow part of the electron cyclotron resonance area 112 is arranged inside the dielectric 16a, plasma is not generated inside the waveguide unit 3a at the time of incidence of the micro wave, but a large quantity of high-energy electron is generated in parts 121a, 121b near the tip, which coincide with the inner surface of the plasma generating chamber of the dielectric 16a, and while the generated plasma is diffused in the plasma generating chamber so as to generate the plasma at a high density.

5. 发明专利

JPH09266096A PLASMA TREATMENT DEVICE, AND PLASMA TREATMENT METHOD USING IT 失效
公开(公告)号：JPH09266096A
公开(公告)日：1997-10-07
申请号：JP7359896
申请日：1996-03-28
申请人： HITACHI LTD
发明人： ICHIMURA SATOSHI , SATO TADASHI , HASHIMOTO ISAO
IPC分类号： H05H1/46 , C23C14/48 , C23C16/50 , C23C16/511 , C23F4/00 , H01J37/32 , H01L21/205 , H01L21/302 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To perform a uniform plasma treatment suppressed in influence of magnetic field in a wide range by providing specified two magnetostatic field generating means in combination. SOLUTION: This device has a first magnetostatic field generating means formed of a permanent magnet 3 which surrounds an electron heating space chamber part 1 to form a ferromagnetic field exceeding electronic cyclotron resonance magnetic field intensity along the transmitting direction of microwave within the electron heating space chamber part 1 in the microwave outlet part 6a of a dielectric body 6, and also form a cup magnetic field in which the magnetic field intensity is sharply built up between the electronic cyclotron resonance magnetic field intensity position and the boundary part between the electron heating space chamber part 1 and a plasma generating space chamber part 2, and the direction is reversed to the above ferromagnetic field from the boundary part toward the plasma generating space chamber part 2; and a second magnetstatic field generating means formed of a permanent magnet 4 (formed of 4a, 4b, and 4c) arranged around the plasma generating space chamber part 2 so that the polarities are mutually varied.

6. 发明专利

JPH08209363A ELECTRON BEAM ETCHING DEVICE 失效
公开(公告)号：JPH08209363A
公开(公告)日：1996-08-13
申请号：JP1349295
申请日：1995-01-31
申请人： HITACHI LTD
发明人： SATO TADASHI , KIYONO TOMOYUKI , ICHIMURA SATOSHI
IPC分类号： H05H1/46 , C23F4/00 , H01L21/302 , H01L21/3065
摘要： PURPOSE: To make it possible to execute integral etching of a large-area substrate which is heretofore difficult with the conventional electron beam device. CONSTITUTION: This device consists of a plasma generating vessel 2 which generates plasma by ionizing a neutral gas, leading-out electrodes 6, 7 which lead out electrons as an electron beam from the plasma, the substrate 12 on which the electron beam is made incident and a vacuum vessel 13. The etching gas on the substrate surface is ionized by the electron beam led out of the plasma generating chamber provided with permanent magnets 3 in such a manner that magnetic poles change alternately on the outer or inner periphery of the plasma generating vessel 2, by which the substrate surface is etched.

7. 发明专利

JPH08165563A ELECTRON-BEAM ANNEALING DEVICE 失效
公开(公告)号：JPH08165563A
公开(公告)日：1996-06-25
申请号：JP31020994
申请日：1994-12-14
申请人： HITACHI LTD
发明人： SATO TADASHI , ICHIMURA SATOSHI
IPC分类号： G21K5/04 , C23C14/30 , H01J37/317 , H01L21/263
摘要： PURPOSE: To uniformly heat and anneal a large-area substrate in a short time by arranging permanent magnets on the outer or inner periphery of a plasma producing vessel with the magnetic poles alternately changed and irradiating a substrate with an electron beam therefrom. CONSTITUTION: A glow discharge is generated between a cathode 1 and the wall of a plasma producing vessel 2 in the vessel 2, and a neutral gas such as hydrogen supplied from a gas inlet 20 is ionized to produce plasma. The electron in the plasma drawn out into a vacuum vessel 13 as an electron beam by an accelerating electrode 6 and a decelerating electrode 7. The electron beam is made incident on a chamber 12 which is thereby heated. In this electron- beam annealing device, permanent magnets 3 are arranged on the outer or inner periphery of the vessel 2 so that the magnetic poles are alternately changed. Consequently, a multicusp magnetic field is formed to confine the plasma, the plasma is uniformly formed on a large area, and electron beam outputs of about the same current density are obtained over a large area.

8. 发明专利

JPH07192893A PLASMA DEVICE 失效
公开(公告)号：JPH07192893A
公开(公告)日：1995-07-28
申请号：JP33103393
申请日：1993-12-27
申请人： HITACHI LTD
发明人： ICHIMURA SATOSHI , SATO TADASHI , KIYONO TOMOYUKI
IPC分类号： H05H1/11 , C23C14/32 , H01J27/18 , H01L21/205 , H01L21/302 , H01L21/3065 , H05H1/46
摘要： PURPOSE:To process a sample at a large area with the even neutral radical by providing permanent magnets having different polarity from each other and a sample board in a sample processing chamber, and flowing the bias applying high-frequency current to the sample board. CONSTITUTION:A plasma generating chamber 1 is a bell-jar made of quartz glass, and its periphery is wound with titanium high-frequency coil 2, and plasma is generated and maintained in the generating chamber 1 by the high-frequency power. The lower end of the generating chamber 1 is connected to a central part of the upper part of a sample processing chamber 3. The processing chamber 3 is a stainless steel made cylindrical container 4, and permanent magnets 5 made of salium of cobalt are provided on the periphery of the processing chamber 3 so that the polarity are different from each other. Thickness of the container 4 at parts provided with magnet 5 is set at a predetermined value or less, intensity of the magnetic field of the inner surface at a predetermined or more is obtained. A sample board 6 is connected to a high-frequency power source 7 to obtain the bias voltage for accelerating the positive ion in the sample direction, and connected to a temperature adjusting unit for performing the cooling and heating. Bias is applied to the sample board 6 from the high-frequency power source 7 to maintain the stabilized discharge for a long time.

9. 发明专利

JPH06267904A ION BEAM ETCHING DEVICE AND METHOD THEREOF 失效
公开(公告)号：JPH06267904A
公开(公告)日：1994-09-22
申请号：JP5539493
申请日：1993-03-16
申请人： HITACHI LTD
发明人： IGA TAKASHI , ICHIMURA SATOSHI , ONO YASUNORI , NATSUI KENICHI
IPC分类号： C23F4/00 , G01N24/14 , G01R33/64 , H01L21/302 , H01L21/3065 , H05H1/46
摘要： PURPOSE:To provide an ion beam etching device, which can be used in combination a microwave ion source having a large leakage magnetic field with a plasma bridge type neutralizing device and is long-lived to active gas. CONSTITUTION:A first solenoid coil 5 is used for producing plasma, which is a microwave ion source. A second solenoid coil 13 is located on the same axis as that of the coil 5 and generates a magnetic field in the opposite direction to the direction of the coil 5 to form a cusp field. A plasma bridge type neutralizing device 14 is provided on the periphery of an ion beam 19 and is arranged on a plane A-A including a ring cusp of the cusp field or on its downstream side. As electrons 20 extracted from the device 14 are diffused in the side of a sample along a line of magnetic force which is formed by the, coil 13, the efficiency, which contributes to a neutralization of the sample 12, of the electrons 20 led out from the device 14 is increased.

10. 发明专利

JP2014112985A Dynamo-electric machine 审中-公开
标题翻译： DYNAMO-ELECTRIC MACHINE
公开(公告)号：JP2014112985A
公开(公告)日：2014-06-19
申请号：JP2012265914
申请日：2012-12-05
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： MORIYAMA TOMOHIRO , ICHIMURA SATOSHI , TSUCHIYA HARUMASA , ONODA MITSURU , SUZUKI KEIJI
IPC分类号： H02K3/40 , H02K3/34
摘要： PROBLEM TO BE SOLVED: To provide a dynamo-electric machine in which deterioration and burning of a low resistance corona shield layer interposed on the aperture plane of a slot in a stator core, and the bottom face of the slot can be prevented by simple means.SOLUTION: A stator coil 7 operated with a voltage having high frequency components, and having a low resistance corona shield layer 14 formed on the surface of a main insulation layer 10 is attached in the slot 6 of a stator core 5 via a slot liner 12. Furthermore, charging current inhibition means (16, 17, 18, 20) for interrupting the charging current are provided between the aperture plane of the slot 6 and the slot liner 12 layer on the bottom face thereof, or between the low resistance corona shield layer 14 and the slot liner 12 layer, or entirely.
摘要翻译：要解决的问题：提供一种发电机，其中可以通过简单的手段防止插入在定子铁心中的槽的孔面上的低电阻电晕屏蔽层和槽的底面的劣化和燃烧解决方案：在具有高频分量的电压下工作的定子线圈7和形成在主绝缘层10的表面上的具有低电阻的电晕屏蔽层14通过狭槽衬套安装在定子铁芯5的槽6中此外，用于中断充电电流的充电电流抑制装置（16,17,18,20）设置在槽6的孔径平面与其底面上的槽衬套12之间，或者在低电阻电晕之间屏蔽层14和缝隙衬垫12层，或完全。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式