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1. 发明专利

JP2001035409A CATHODE-RAY TUBE 失效
公开(公告)号：JP2001035409A
公开(公告)日：2001-02-09
申请号：JP20866499
申请日：1999-07-23
申请人： HITACHI LTD
发明人： KOBAYASHI KENZO , ENDO FUMIMASA
IPC分类号： H01J29/48 , H01J29/54
摘要： PROBLEM TO BE SOLVED: To provide a cathode-ray tube with its STC drift suppressed. SOLUTION: A cathode-ray tube includes an electron gun composed of a cathode 9, grid electrodes 10, 11, 12, 13, 14, 15, and a shield cup 16, a deflection yoke 3 to deflect an electron beam 1 emitted from the electron gun, a fluorescent screen 2 to make visible the image drawn by the electron beam 1, and a neck glass 6 for sealing the electron gun in vacuum. According to one example of embodiment, an electrode 17 having a fixed potential for suppressing STC drift is installed on the atmospheric side surface of the neck glass in the neighbourhood of focus electrodes (a fifth grid electrode (G5) 14 and a sixth grid electrode (G6) 15). Thereby potential variation on the neck glass 6 can be suppressed.

2. 发明专利

JPH11219673A CATHODE-RAY TUBE AND ITS MANUFACTURE 失效
公开(公告)号：JPH11219673A
公开(公告)日：1999-08-10
申请号：JP2173898
申请日：1998-02-03
申请人： HITACHI LTD
发明人： KOBAYASHI KENZO , KOBAYASHI KAZUO , ENDO FUMIMASA , SHIRAI MASAJI , UCHIDA TAKESHI , KUROKUZUHARA MAMORU
IPC分类号： H01J29/86
摘要： PROBLEM TO BE SOLVED: To suppress the drift which is the time fluctuation of the orbit of an electron beam by applying a water-repellent material to the surface on the atmospheric side of the glass of a neck section. SOLUTION: A water-repellent material is applied to the glass 1a of a neck section to vacuum-seal an electron gun 2, thus the sticking of water molecules to the glass 1 a of the neck section from the atmospheric side is suppressed. The surface of the glass la has the hydrophilic group such as Si-O-Si or Si-OH, therefore the water-repellent material is made of organic molecules such as silicon carbide on the surface to eliminate a hydrophilic property, to improve a hydrophobic property (for water repellency), and to lower the free energy on the surface. The-CF3 group, -CF2 group, -CH3 group or -CH2 group has low surface energy, thus the glass 1a is manufactured so that these groups exist on its surface, and a siloxane polymer (e.g. polydimethyl siloxane) is used. The sticking of water molecules to the glass of the neck section is suppressed, and the time fluctuation of sticking is suppressed.

3. 发明专利

JP2000030627A CATHODE-RAY TUBE 失效
公开(公告)号：JP2000030627A
公开(公告)日：2000-01-28
申请号：JP19696998
申请日：1998-07-13
申请人： HITACHI LTD
发明人： KOBAYASHI KENZO , KOBAYASHI KAZUO , ENDO FUMIMASA , MIYAMOTO SATORU , SHIRAI MASAJI , KUROKUZUHARA MAMORU
IPC分类号： H01J29/48 , H01J29/96
摘要： PROBLEM TO BE SOLVED: To support an electrode of an electron gun without complication in a neck or any arrangement of a groove in an electrode carrier by applying an ion implanting process to a supporting structural body holding the electrode in the electron gun. SOLUTION: The surface of an electrode carrier 25 is processed by ion implanting, sputtering, depositing, and the like, so that a function as a built-in resistor is provided to the electrode carrier 25. This processed part generates predetermined voltage in respective parts in a resistor according to a resistor potential dividing principal so as to impress it to first-sixth grid electrodes (G1-G6) 18-23. As no built-in resistor other than the electrode carrier 25 is installed and no resistor embedding groove is machined in the electrode carrier 25, complication of a neck part is avoided. A voltage supply function to the first-sixth grid electrodes (G1-G6) 18-23 is provided by processing the surface of the electrode supporting body 25 and forming a desired resistance value based on the control of a surface specific resistance, and a desired voltage is obtained so as to be supplied to an electron gun.

4. 发明专利

JPH1116516A CATHODE-RAY TUBE AND ITS MANUFACTURE 失效
公开(公告)号：JPH1116516A
公开(公告)日：1999-01-22
申请号：JP16561497
申请日：1997-06-23
申请人： HITACHI LTD
发明人： KOBAYASHI KENZO , KOBAYASHI KAZUO , ENDO FUMIMASA , SHIRAI MASAJI , UCHIDA TAKESHI , KUROKUZUHARA MAMORU
IPC分类号： H01J9/44 , H01J29/76
摘要： PROBLEM TO BE SOLVED: To shorten the time for aging process in the manufacture cathode-ray tube by mounting an electron gun electrode or a deflection coil for irradiating a neck glass inner wall on a neck part, in addition to a defection coil for emitting electron beams to a phosphor screen to emit light from the phosphor screen. SOLUTION: In aging process, the electron emitted from a cathode within an electron gun 2 is collided to an electrode, and a secondary electron generated thereby is partially emitted to a neck glass inner wall, whereby the neck glass is electrically charged. Therefore, this cathode-ray tube is provided with a deflection coil 11 for emitting electron beams to the electrode, generating a secondary electron from the electrode, and emitting the electron to the inner wall of a neck glass 3, in addition to a deflection yoke 8 for emitting a light having a prescribed pattern from a phosphor screen. Thus, the charge quantity per unit time on the inner wall of the neck glass 3 can be increased to shorten the time for stabilizing the potential of the neck glass 3.

5. 发明专利

JP2010055405A Execution environment selection system, execution environment selecting method, and execution environment selection program 审中-公开
标题翻译：执行环境选择系统，执行环境选择方法和执行环境选择程序
公开(公告)号：JP2010055405A
公开(公告)日：2010-03-11
申请号：JP2008220210
申请日：2008-08-28
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： KOBAYASHI KENZO , HASE KENICHI , TAKAHARA KIYOSHI
IPC分类号： G06F9/50
摘要： PROBLEM TO BE SOLVED: To efficiently and surely select an execution environment for high-speed processing suitable to each individual program.
SOLUTION: The execution environment selection system 100 comprises: a parallel information extracting means 110 for retrieving data on parallel processing validation in a multiprocessor environment for an object obtained by compiling a target program and storing the data in a storing means; an IO processing information extracting means 111 for retrieving descriptions of IO processing included in the source code of the target program, calculating the ratio of the IO processing to the whole source code and storing the ratio in the storing means; and a multiplicity control means 112 for retrieving a target program associated with presence information of the data of the parallel processing validation in the storing means to determine the execution environment of the target program as a multiprocessor environment, retrieving a target program not associated with the presence information of the data of the parallel processing validation and having the ratio of IO processing equal to or more than a predetermined threshold, determining the execution environment of the target program as a single processor environment, and outputting an instruction to select the execution environment to an output device.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了有效且可靠地选择适合于每个单独程序的高速处理的执行环境。解决方案：执行环境选择系统100包括：并行信息提取装置110，用于在多处理器环境中检索用于通过编译目标程序获得的对象并将数据存储在存储装置中的并行处理验证数据; IO处理信息提取装置111，用于检索包括在目标程序的源代码中的IO处理的描述，计算IO处理与整个源代码的比率并将该比率存储在存储装置中; 以及多重控制装置112，用于在存储装置中检索与并行处理确认的数据的存在信息相关联的目标程序，以将目标程序的执行环境确定为多处理器环境，检索与存在无关的目标程序并行处理验证数据的信息，IO处理的比例等于或大于预定阈值，将目标程序的执行环境确定为单个处理器环境，并将执行环境的指令输出到输出设备。版权所有（C）2010，JPO＆INPIT

6. 发明专利

JPH08296069A ION-BEAM TREATING DEVICE 失效
公开(公告)号：JPH08296069A
公开(公告)日：1996-11-12
申请号：JP10588495
申请日：1995-04-28
申请人： HITACHI LTD
发明人： ICHIMURA SATOSHI , SATO TADASHI , KOBAYASHI KENZO , OISHI SEITARO , ONUKI HISAO
IPC分类号： H05H1/46 , C23F4/00 , H01J27/16 , H01J27/18 , H01J37/02 , H01J37/08 , H01J37/30 , H01J37/305 , H01L21/302 , H01L21/3065
摘要： PURPOSE: To realize an ion beam with the current increased and having a large diameter. CONSTITUTION: A strip electrode 8 is set at a negative potential with respect to a treating chamber 23 by a DC power source 18 when neutralized plasma is produced, and hence an ion 23 in the neutralized plasma is collected on the electrode 8. Further, the electrons in the same amt. as the collected ion charge are uniformly supplied toward an ion beam. Accordingly, the ion collecting area is increased by collecting the ion on the strip electrode, hence only the neutralized plasma is produced, sufficient ions are surely collected from the plasma, and the sufficient electrons are supplied to the ion beam side.

7. 发明专利

JPH07155618A SUPPORTED METAL CATALYST AND PRODUCTION THEREOF 失效
公开(公告)号：JPH07155618A
公开(公告)日：1995-06-20
申请号：JP30495793
申请日：1993-12-06
申请人： HITACHI LTD
发明人： YAMAGUCHI MOTOO , KOBAYASHI KENZO , MATSUO HISAHIDE , UOZUMI SHOHEI
IPC分类号： B01J21/18 , B01J23/40 , B01J23/48 , B01J23/62 , B01J23/64 , B01J23/66 , B01J23/89 , B01J35/00 , B01J35/02 , B01J37/02 , H01M4/88 , H01M4/90
摘要： PURPOSE:To enhance catalytic capacity by more increasing adsorbing sites, that is, active points by allowing metal particles to collide with a carbon carrier in a form of ionic atoms or in a form of atomic particles constituted of some atoms to absorb and support them on the carrier. CONSTITUTION:Platinum plasma is generated by an ion injection device to be taken out in the form of atomic platinum ions 1 and, for example, the platinum ions 1 are injected into the carbon support atoms 2 of the surface layer part of acetylene black used as a carbon carrier along ion streams 3 by acceleration voltage 100 kV. Thereafter, the atomic platinum ions 1 collide with the carbon carrier to be adsorbed thereon and a part of the atoms 2 of the carbon carrier surface layer is liberated and the liberated carbon atoms 2-1 scatter in a liberated carbon scattering direction 4. As a result, the number of active points generating catalytic activity is maximized and the number of adsorbing sites can be increased.

8. 发明专利

JPH0688225A ION IRRADIATION DEVICE AND ANTISTATIC DEVICE 失效
公开(公告)号：JPH0688225A
公开(公告)日：1994-03-29
申请号：JP24167592
申请日：1992-09-10
申请人： HITACHI LTD
发明人： KOBAYASHI KENZO , SAKAI KATSUHIKO , HAKAMATA YOSHIMI , IGA TAKASHI , SAKUMICHI KUNIYUKI
IPC分类号： C23C14/48 , H01J37/317 , H01L21/265
摘要： PURPOSE:To provide the ion irradiation device which is long in maintenance period, lessens the contamination of a body to be irradiated with ions with heavy metals and can uniformly supply charges to the body to be irradiated with the ions or ion beams. CONSTITUTION:An ion source 9 for generating the ions, the body 3 which is to be irradiated with the ions and is irradiated with the ions from this ion source 9 and a plasma generating discharge vessel 19 (19A and 19B) for supplying the charges to the body 3 to be irradiated with the ions or supplying the charges to the ion beams 8 of the assemblage of the ions. are provided. The above-ion irradiation device is formed with the ion irradiation device equipped with the plasma generating discharge vessel 19 (19A and 19B) enclosing the ion beams 8 and equipped with a microwave generating section for forming the above plasma and a magnetic field generating section 21 (21A and 21B) as well as a gas supplying section 12 (12A and 12B).

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