专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

41. 发明专利

JP2004101528A Method of manufacturing semiconductor dynamic amount sensor 有权
标题翻译：制造半导体动态量传感器的方法
公开(公告)号：JP2004101528A
公开(公告)日：2004-04-02
申请号：JP2003314030
申请日：2003-09-05
申请人： Denso Corp , 株式会社デンソー
发明人： KANO KAZUHIKO , SUGIURA MAKIKO , TAKEUCHI YUKIHIRO , YAMAMOTO TOSHIMASA
IPC分类号： G01C19/56 , G01C19/5755 , G01C19/5769 , G01L1/18 , G01P15/00 , G01P15/08 , G01P15/125 , H01L29/84 , G01P9/04
CPC分类号： G01P2015/0814 , G01P2015/0828
摘要： PROBLEM TO BE SOLVED: To prevent the fracture of a movable part caused by water flow, water pressure and handling in mounting.
SOLUTION: Movable electrodes 24 of a beam structure are mounted at an upper part of a P-type silicon board 17 at predetermined intervals, and an acceleration is detected on the basis of the displacement of the movable electrodes 24 accompanying the action of the acceleration. In manufacturing the sensor, naphthalene 44 as a sublimating substance is placed on the P-type silicon board 17 including a part between the P-type silicon board 17 and the movable electrode 24, and naphthalene 44 is fixed. The mounting such as dicing cut, mounting, and wire bonding is performed in this condition. Here, the fracture of the movable electrodes 24 can be prevented as the movable electrodes 24 are fixed by naphthalene to prevent their movement, through the water flow in dicing cut and the vibration in wire bonding is applied to the movable electrode 24, or the handing is performed thereto. Naphthalene 44 is vaporized after the mounting.
COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：防止由水流，水压和安装中的处理引起的可移动部件断裂。解决方案：梁结构的可移动电极24以预定间隔安装在P型硅板17的上部，并且基于随着可动电极24的作用而发生的移动来检测加速度加速。在制造传感器时，作为升华物质的萘44被放置在P型硅板17上，P型硅板17包括P型硅板17和可动电极24之间的部分，并且萘44被固定。在这种情况下进行切割，安装和引线接合等安装。这里，由于可动电极24被萘固定以防止它们的移动，通过切割切割中的水流，并且引线接合中的振动施加到可动电极24上，或者处理对其进行。萘44在安装后蒸发。版权所有（C）2004，JPO

42. 发明专利

JP2003270015A FLOW RATE MEASURING APPARATUS 有权
公开(公告)号：JP2003270015A
公开(公告)日：2003-09-25
申请号：JP2002070567
申请日：2002-03-14
申请人： DENSO CORP
发明人： KONO YASUSHI , YAMAMOTO TOSHIMASA , WADO HIROYUKI , YOSHIOKA TETSUO
IPC分类号： G01F1/00 , F02D35/00 , G01F1/684 , G01F15/12
摘要： PROBLEM TO BE SOLVED: To provide a flow rate measuring apparatus capable of preventing collision of particles against and sticking of pollutant to a sensor part and capable of stably and precisely measuring air flow rate. SOLUTION: The flow measuring apparatus is provided with a flow channel 3 used to introduce an air to be measured to be circulated, and the sensing part 4 installed inside the flow channel 3 to measure a flow rate of the air to be measured. A diaphragm part 20 used to stop down the flow of the air to be measured flowing near the sensor part 4 is formed on a sidewall inside the flow channel 3 forming the sensor part 4, and a plane part 20a parallel to the surface of the sensing part 4 is formed at the diaphragm part 20 at least on the upstream side from the sensor part 4. COPYRIGHT: (C)2003,JPO

43. 发明专利

JP2003149024A FLOW RATE MEASURING DEVICE 审中-公开
公开(公告)号：JP2003149024A
公开(公告)日：2003-05-21
申请号：JP2001350442
申请日：2001-11-15
申请人： DENSO CORP
发明人： TESHIGAWARA AKIHIKO , YAMAMOTO TOSHIMASA , BAN TAKAHISA
IPC分类号： G01F1/00 , G01F1/684
摘要： PROBLEM TO BE SOLVED: To slow down the velocity around a sensor only in high flow rate range and not low flow rate range in a flow rate measuring device constituted by providing a flow sensor for flow rate measurement in a sensor path where fluid flows. SOLUTION: In the main flow path 10 where fluid flows, a flow sensor 30 is contained, and a bypass path 20 for guiding fluid to the flow sensor 30 is provided. At the inlet 21 of the bypass path 20, an opening area variation means 40 whose opening area varies according to the fluid flow rate variation is provided.

44. 发明专利

JP2003021546A Membrane type sensor and its manufacturing method 审中-公开
标题翻译：膜型传感器及其制造方法
公开(公告)号：JP2003021546A
公开(公告)日：2003-01-24
申请号：JP2001206685
申请日：2001-07-06
申请人： Denso Corp , 株式会社デンソー
发明人： TAKEUCHI YUKIHIRO , YAMAMOTO TOSHIMASA
IPC分类号： G01F1/692 , G01N27/12
摘要： PROBLEM TO BE SOLVED: To improve strength to shock without deteriorating thermal conduction characteristic, in a membrane disposed in a membrane type sensor.
SOLUTION: In the membrane 10 disposed covering a cavity part 1a of a substrate 1, a plurality of thick film parts which are thick partially are formed in a type of islands.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：设置在膜式传感器中的膜中，为了提高强度而不会导致热传导特性恶化。解决方案：在覆盖基板1的空腔部分1a的膜10中，部分地厚的多个厚膜部分形成为岛状。

45. 发明专利

JP2001183203A FLOW SENSOR 失效
公开(公告)号：JP2001183203A
公开(公告)日：2001-07-06
申请号：JP36646399
申请日：1999-12-24
申请人： DENSO CORP
发明人： IWAKI TAKAO , YAMAMOTO TOSHIMASA , KATO NOBUYUKI
IPC分类号： G01P5/12 , G01F1/68
摘要： PROBLEM TO BE SOLVED: To heighten a high flow rate side measuring limit of a thermosensitive flow sensor. SOLUTION: A heather 3 and a temperature sensing element 5 are formed on a bridge 2 mounted on a substrate 1. A fluid thermometer 4 is formed on the upstream side of the bridge 2 on the substrate 1. The heater 3 is controlled at a temperature higher than a fluid temperature obtained from the fluid thermometer 4 by a fixed temperature. The flow rate of the fluid is measured based on the difference between a temperature measured by the temperature sensing element 5 and a temperature measured by the fluid thermometer 4. An intermediate terminal Hm1 is installed on the heater 3, and at a high flow rate, a prescribed voltage is applied to the intermediate terminal Hm1. Thereby, the temperature of the upstream part of the heater 3 is increased, heightening the measuring limit.

46. 发明专利

JP2001119040A SEMICONDUCTOR AMOUNT-OF-DYNAMICS SENSOR AND MANUFACTURING METHOD THEREFOR 失效
公开(公告)号：JP2001119040A
公开(公告)日：2001-04-27
申请号：JP29550099
申请日：1999-10-18
申请人： DENSO CORP
发明人： YAMAMOTO TOSHIMASA , TAKEUCHI YUKIHIRO , KATO NOBUYUKI
IPC分类号： G01P15/125 , H01L29/84
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor amount-of-dynamics sensor for readily securing a closing property in a cap when protecting the movable part of beam structure with the cap. SOLUTION: A sensor element part, consisting of a beam structure 2 as a movable part, fixed electrodes 9a-9c, and the like, is provided on the upper surface of a silicon substrate 17, an insulated and separated conductive thin film 19 is embedded between a sensor element part and the substrate 17, a wiring pattern and lower electrodes 22-25 formed by the conductive thin film 19 are electrically connected to electrode take-out parts 27a-27d arranged being nearly flush with the sensor element part, at the same time, a flat part 30 without steps so that the sensor element part is surrounded is formed between the electrode draw-out part on the substrate 17 and the sensor element, one surface side of a cap substrate 200 with a recessed part 202 at one surface side is joined to the flat part 30, and the sensor element part is covered with the recessed part 202 for protection.

47. 发明专利

JP2000164890A SEMICONDUCTOR KINEMATIC VALUE SENSOR AND MANUFACTURING METHOD THEREFOR 失效
公开(公告)号：JP2000164890A
公开(公告)日：2000-06-16
申请号：JP33792998
申请日：1998-11-27
申请人： DENSO CORP
发明人： KATO NOBUYUKI , YAMAMOTO TOSHIMASA
IPC分类号： G01P15/125 , B81B3/00 , B81C1/00 , G01P15/13 , H01L29/84
摘要： PROBLEM TO BE SOLVED: To provide a sensor constitution for a semiconductor kinematic value sensor formed by a beam structure body, of which supporting for the beam structure body becomes stable through etching an insulating film by using an SOI(silicon-on-insulator) wafer. SOLUTION: A semiconductor sensor is comprised of an SOI wafer 63, made of an oxide film 61 as an insulting film which is put between a first substrate 60 made of two sheets of single crystal silicon and a second substrate 62 which is prepared, a defined frame 64 in order to demarcate a beam structure body 2A as a movable part and a fixing part 2B on the second substrate 62 being formed and the oxide film 61 below the beam structure body 21 which is removed by etching. Here the beam structure body 2A is supported and fixed by the first substrate 60 by an anchor part, which is formed as an embedding part by burying a polysilicon film 68 having an etching proof performance and a polysilicon nitride film 69 in a trench 66, passing trough the oxide film 61 from the second substrate 62.

48. 发明专利

JP2000022142A SEMICONDUCTOR DEVICE AND PRODUCING METHOD THEREFOR 失效
公开(公告)号：JP2000022142A
公开(公告)日：2000-01-21
申请号：JP18273198
申请日：1998-06-29
申请人： DENSO CORP
发明人： ITO HIROYASU , YAMAMOTO TOSHIMASA , ONODA KUNIHIRO , MORISHITA SHINJI , YAMAMOTO HIROKI
IPC分类号： H01L29/78 , H01L21/8234 , H01L27/088 , H01L29/423 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To restrain from deterioration due to aging of the current capacity of a semiconductor device. SOLUTION: This semiconductor device of a P-channel type LD horizontal doubly-diffused MOS 21 is constituted of an N-type single crystal silicon substrate 22, a P-type impurity diffused layer 23 which is formed in a shape of a well to reach a prescribed height, a channel well layer 24 which is doubly diffused N-type impurities, a source diffused layer 24, an electric potential fixing diffused layer 26, a drain contact layer 27, a LOCOS oxide film 28, a gate electrode 29, a drain electrode 31, a source electrode 32 and so forth. In particular, the gate electrode 29 is formed into a shape overlapped on the LOCOS oxide film 28, where the overlapped length of the gate electrode 29 is set at about 10 μm, which is nearly half the width of the LOCOS oxide film 28.

49. 发明专利

JPH11195712A SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH11195712A
公开(公告)日：1999-07-21
申请号：JP23613598
申请日：1998-08-21
申请人： DENSO CORP
发明人： YAMAGUCHI HITOSHI , MORISHITA TOSHIYUKI , YAMAMOTO TOSHIMASA
IPC分类号： H01L21/02 , H01L21/331 , H01L21/336 , H01L21/762 , H01L21/8234 , H01L21/84 , H01L27/088 , H01L27/12 , H01L29/06 , H01L29/40 , H01L29/739 , H01L29/78 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To easily take a substrate potential from a surface side of a silicon layer. SOLUTION: A silicon layer 4 is arranged through an embedded oxidized film 3 on a silicon substrate 1, the silicon layer 4 is sectioned to a silicon island 8 at a trench 5, the surface of the silicon layer 4 at the trench 5 is covered with an oxidized film 6 for a sidewall, and LDMOS transistors Q1 and Q2 are formed at the silicon island 8. A first impurity doped polysilicon layer 2 for substrate potential impression is arranged under the embedded oxidized film 2, and a second impurity doped polysilicon layer 7 connected to the first impurity doped polysilicon layer 2 is arranged inside the trench 5. Furthermore, electrodes 19a and 19b for the substrate potential impression connected to the second impurity doped polysilicon layer 7 are arranged on the surface side of the silicon layer 4, and the electrodes 19a and 19b are connected to the source electrodes 17a and 17b of the transistor Q1.

50. 发明专利

JP2014053595A Silicon carbide semiconductor device and manufacturing method of the same 有权
标题翻译：硅碳化硅半导体器件及其制造方法
公开(公告)号：JP2014053595A
公开(公告)日：2014-03-20
申请号：JP2013156393
申请日：2013-07-29
申请人： Denso Corp , 株式会社デンソー , Toyota Motor Corp , トヨタ自動車株式会社 , Toyota Central R&D Labs Inc , 株式会社豊田中央研究所
发明人： MIYAHARA SHINICHIRO , YAMAMOTO TOSHIMASA , MORIMOTO JUN , SOEJIMA SHIGEMASA , WATANABE YUKIHIKO
IPC分类号： H01L29/78 , H01L21/316 , H01L21/336 , H01L29/12
CPC分类号： H01L29/66734 , H01L21/049 , H01L21/28158 , H01L21/30604 , H01L29/045 , H01L29/1095 , H01L29/1608 , H01L29/4236 , H01L29/4238 , H01L29/66068 , H01L29/7397 , H01L29/7813
摘要： PROBLEM TO BE SOLVED: To inhibit the occurrence of leakage current to achieve an SiC semiconductor device with a gate oxide film having higher reliability.SOLUTION: In composition of a vertical MOSFET having a trench gate structure 9 by using an ntype substrate 1 and the like having an off angle to a (0001) plane or a (000-1) plane, a gate oxide film 7 is formed after forming a trench 6 without performing a sacrificial oxidation process. By doing this, the vertical MOSFET needs not be influenced by the sacrificial oxidation process and can inhibit the partial occurrence of leakage current in the trench gate structure 9 thereby to enable achievement of an SiC semiconductor device with a gate oxide film 7 having higher reliability.
摘要翻译：要解决的问题：为了抑制漏电流的发生，实现具有较高可靠性的栅极氧化膜的SiC半导体器件。解决方案：通过使用n型衬底1等具有沟槽栅极结构9的垂直MOSFET的组成与（0001）面或（000-1）面成偏角时，在不进行牺牲氧化处理的状态下，在形成沟槽6之后形成栅极氧化膜7。通过这样做，垂直MOSFET不需要受牺牲氧化处理的影响，并且可以抑制沟槽栅极结构9中的部分泄漏电流的发生，从而能够实现具有更高可靠性的栅极氧化膜7的SiC半导体器件。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式