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31. 发明专利

JP2006100742A Defect determination method and defect determination system 审中-公开
标题翻译：缺陷确定方法和缺陷确定系统
公开(公告)号：JP2006100742A
公开(公告)日：2006-04-13
申请号：JP2004287948
申请日：2004-09-30
申请人： Toshiba Corp , 株式会社東芝
发明人： USHIKU YUKIHIRO , INO TOMOMI
IPC分类号： H01L21/02 , H01L21/66
CPC分类号： G05B23/024
摘要： PROBLEM TO BE SOLVED: To provide a method for determining a defect of a manufacturing condition affecting a yield.
SOLUTION: The method is employed to obtain a state variable data corresponding to the manufacturing condition of the manufacturing equipment which is carried out under each manufacturing condition for the manufacturing processes of a plurality of products, to prepare a figure of wave of a first series of data of first characteristic quantity corresponding to the state variable data for each of the products, to classify a first similar series of data into similar groups from the correlation between the figures of wave, to prepare a first visualized data table which is shown by the first figure pattern visualizing the magnitude of the first characteristic quantity for each similar group, to obtain the result showing measurement and inspection of a plurality of products, to add a second series of data of a second characteristic quantity into a similar group, and to prepare a second visualized data table which is shown by the second figure pattern visualizing the magnitude of the second characteristic quantity corresponding to the result.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种确定影响产量的制造条件的缺陷的方法。解决方案：该方法用于获得与在多个产品的制造过程中的每个制造条件下执行的制造设备的制造条件相对应的状态变量数据，以准备多个产品的波形对应于每个产品的状态变量数据的第一特征量的第一系列数据，根据波形图之间的相关性将第一类似的数据类型分类成类似的组，以准备显示的第一可视化数据表通过第一图形图形可视化每个相似组的第一特征量的大小，以获得显示多个产品的测量和检查的结果，以将第二特征量的第二系列数据添加到相似组中，以及以准备第二可视化数据表，其由第二图形图示出，可视化第二图的大小特征量对应于结果。版权所有（C）2006，JPO＆NCIPI

32. 发明专利

JP2005109437A Manufacturing system and method of semiconductor device 有权
标题翻译：制造系统和半导体器件的方法
公开(公告)号：JP2005109437A
公开(公告)日：2005-04-21
申请号：JP2004189971
申请日：2004-06-28
申请人： Toshiba Corp , 株式会社東芝
发明人： USHIKU YUKIHIRO , OGAWA AKIRA , KAKINUMA HIDENORI , SHUDO SHUNJI , ABE MASAYASU , AKIYAMA TATSUO , KOMATSU SHIGERU
IPC分类号： H01L21/3065 , G05B19/418 , H01L21/00 , H01L21/02 , H01L21/31 , H01L21/316 , H01L21/331
CPC分类号： G05B19/4184 , G05B19/41885 , G05B2219/32368 , G05B2219/45031 , Y02P90/14 , Y02P90/22 , Y02P90/26 , Y02P90/265
摘要： PROBLEM TO BE SOLVED: To properly manage a maintenance interval of a processor and to shorten a manufacturing process period of a semiconductor device. SOLUTION: This system is provided with a processor 14 for executing process treatment using a semiconductor substrate 17, a self-diagonostic system 11a for receiving device information from the processor 14 and performing self-management of the processor 14, an inspection device 19 for inspecting the result of the process treatment, and a computer 11. The computer 11 judges whether or not to automatically restore the processor 14 based on the inspection result, and maintains a parameter of the self-diagonostic system 11a when the judgement result is valid and changes a parameter of the self-diagonostic system 11a when the judgement result is invalid. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：适当地管理处理器的维护间隔并缩短半导体器件的制造工艺周期。解决方案：该系统设置有用于执行使用半导体衬底17的处理处理的处理器14，用于从处理器14接收设备信息并执行处理器14的自我管理的自我对角线系统11a，检查设备 19，用于检查处理结果的结果以及计算机11.计算机11基于检查结果判断是否自动恢复处理器14，并且当判断结果为...时，维持自身对角线系统11a的参数当判断结果无效时有效并改变自身对角线系统11a的参数。版权所有（C）2005，JPO＆NCIPI

33. 发明专利

JP2004179638A Treatment method and inspection method for semiconductor wafer, developing method of semiconductor device, and semiconductor wafer treatment equipment 有权
公开(公告)号：JP2004179638A
公开(公告)日：2004-06-24
申请号：JP2003372019
申请日：2003-10-31
申请人： Toshiba Corp , 株式会社東芝
发明人： KANGEN JUNJI , TANZAWA KATSUJIRO , TSUCHIYA NORIHIKO , USHIKU YUKIHIRO
IPC分类号： H01L21/66 , H01L21/302 , H01L21/306 , H01L21/461
CPC分类号： H01L22/24 , H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To quantitatively evaluate crystal defects over the whole surface of a wafer, after device formation. SOLUTION: A method for inspecting a semiconductor wafer which has a film to form device structures, including device patterns and may have crystal defects, comprises a process of exposing the crystal surface of the semiconductor wafer, by removing the device structure film with a chemical solution, a process of making apparent any crystal defects by selectively removing the surface layer of the semiconductor wafer through selective etching, and a process of quantitatively evaluating the crystal defects. COPYRIGHT: (C)2004,JPO

34. 发明专利

JP2003124463A SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：JP2003124463A
公开(公告)日：2003-04-25
申请号：JP2002235089
申请日：2002-08-12
申请人： TOSHIBA CORP
发明人： USHIKU YUKIHIRO , MIZUNO TOMOHISA , YOSHIMI MAKOTO , TERAUCHI MAMORU , KAWANAKA SHIGERU
IPC分类号： H01L29/786 , H01L21/336 , H01L29/78
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device which can improve element characteristics. SOLUTION: The semiconductor device is provided with a substrate 21 having a projecting semiconductor element region 23 and a gate electrode 26 which is formed on the upper and lateral side of the element region 23 with gate insulating films 25a and 25b interlaid. In the element region 23, a source region and a drain region are provided separately from each other so that a channel region is formed opposite to the gate electrode 26. At least one selected from the group consisting of the film thickness of the gate insulating films 25a and 25b, the material of the gate insulating films and the material of the gate electrode is different between the upper side of the element region 23 and the lateral side thereof.

35. 发明专利

JP2003077780A Method for diagnosing lifetime of semiconductor manufacturing device 有权
标题翻译：用于诊断半导体制造设备寿命的方法
公开(公告)号：JP2003077780A
公开(公告)日：2003-03-14
申请号：JP2001263548
申请日：2001-08-31
申请人： Toshiba Corp , 株式会社東芝
发明人： SAMATA SHUICHI , USHIKU YUKIHIRO , ISHII MASARU , NAKAO TAKASHI
IPC分类号： H01L21/302 , G05B23/02 , H01L21/02 , H01L21/3065 , H01L21/31
CPC分类号： G05B23/0283
摘要： PROBLEM TO BE SOLVED: To provide a method for diagnosing the lifetime of a semiconductor manufacturing device insusceptible to the variation of process conditions pertaining to semiconductor manufacturing, variation of power supply, or difference between machines.
SOLUTION: The method for diagnosing the lifetime of a semiconductor manufacturing device comprises a step (a) for measuring reference time series data of feature amount when the semiconductor manufacturing device has no deterioration (step S11), a step (b) for determining a reference self covariance function from the reference time series data (step S12), a step (c) for extracting the variation of process conditions and a reference variation caused by a power supply from the reference self covariance function and determining the period of the reference variation (step S13), a step (d) for measuring the diagnostic time series data of feature amount in a sequence becoming the evaluation object of the semiconductor manufacturing device (step S14), a step (e) for determining a diagnostic self covariance function from the diagnostic time series data (step S15), and a step (f) for determining the lifetime of the semiconductor manufacturing device from the diagnostic self covariance function using a component of shorter period than that of the reference variation (step S16).
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：提供一种用于诊断半导体制造装置的寿命的方法，所述半导体制造装置不会受到与半导体制造有关的工艺条件的变化，电源的变化或机器之间的差异的影响。解决方案：用于诊断半导体制造装置的寿命的方法包括步骤（a），用于测量当半导体制造装置没有劣化时的特征量的基准时间序列数据（步骤S11），用于确定参考的步骤（b）根据参考时间序列数据进行自协方差函数（步骤S12），步骤（c），用于从参考自协方差函数中提取处理条件的变化和由电源引起的参考变化，并确定参考变化的周期（步骤S13），用于测量成为半导体制造装置的评估对象的序列中的特征量的诊断时间序列数据的步骤（d）（步骤S14），步骤（e），用于从所述半导体制造装置确定诊断自协方差函数诊断时间序列数据（步骤S15）和用于根据诊断自协方差函数确定半导体制造装置的寿命的步骤（f）使用比参考变化的周期短的分量（步骤S16）。

36. 发明专利

JP2003076414A Method and system for diagnosing failure of production equipment 有权
标题翻译：用于诊断生产设备故障的方法和系统
公开(公告)号：JP2003076414A
公开(公告)日：2003-03-14
申请号：JP2001264278
申请日：2001-08-31
申请人： Toshiba Corp , 株式会社東芝
发明人： NAKAO TAKASHI , USHIKU YUKIHIRO , SAMATA SHUICHI , AKAHORI HIROSHI , ISHII MASARU
IPC分类号： G05B19/418 , G05B23/02 , G06F11/30 , G06F17/00 , G21C17/00 , H01L21/00 , H01L21/02 , H01L21/31
CPC分类号： G05B23/024 , Y02P90/86
摘要： PROBLEM TO BE SOLVED: To provide a method and a system for diagnosing a failure of production equipment capable of automatically diagnosing a failure even in the case of manufacturing various kinds of industrial products. SOLUTION: This system for diagnosing a failure of a production equipment contains a production equipment 5 to be diagnosed, diagnostic quantity sensors 32-37 for measuring a diagnostic quantity of the production equipment 5 to be diagnosed, a real time controller 531 for driving and controlling the production equipment 5 to be diagnosed, a failure real time determination module 533 for forming a failure diagnosing data by computing in relation to outputs of the diagnostic quantity sensors 32-37 to determine a failure, an equipment information memory device 103 storing the data of the diagnostic quantity of the production equipment as an equipment information data base to process the same/similar processing with the production equipment 5 to be diagnosed, and a process control information memory device 102 for recording the process control information data base containing a recipe of a manufacturing process sequence and a recipe of a load test sequence for driving and controlling the production equipment 5 to be diagnosed to output the recipe to the real time controller 531.
摘要翻译：要解决的问题：即使在制造各种工业产品的情况下，也提供用于诊断能够自动诊断故障的生产设备的故障的方法和系统。解决方案：用于诊断生产设备故障的系统包括要诊断的生产设备5，用于测量待诊断的生产设备5的诊断量的诊断量传感器32-37，用于驾驶和控制的实时控制器531 要诊断的生产设备5，用于通过相对于诊断量传感器32-37的输出计算来形成故障诊断数据以确定故障的故障实时确定模块533，存储数据的数据的设备信息存储设备103 生产设备的诊断量作为设备信息数据库，用于处理与待诊断的生产设备5相同/相似的处理;以及过程控制信息存储设备102，用于记录包含处理控制信息数据库制造过程顺序和用于驱动和控制的负载测试序列的配方被诊断的输出设备5将配方输出到实时控制器531。

37. 发明专利

JP2001144175A SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR 失效
公开(公告)号：JP2001144175A
公开(公告)日：2001-05-25
申请号：JP32791699
申请日：1999-11-18
申请人： TOSHIBA CORP
发明人： USHIKU YUKIHIRO
IPC分类号： H01L21/00 , H01L21/762 , H01L21/8249 , H01L21/84 , H01L27/06 , H01L27/08 , H01L27/12 , H01L29/786 , H01L29/788
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device and its manufacturing method, which has an insulation film substantially uniform in height on element isolation regions, a plurality of single crystal semiconductor layers which are different in film thickness, and a structure easy to do fine wiring process. SOLUTION: In a semiconductor device having integrated semiconductor elements having a plurality of SOI-Si layer thicknesses, its element isolation regions 13 are substantially uniform, with respect to their height from a semiconductor substrate surface. After forming the element isolation regions 13 uniform in height on the semiconductor substrate, a plurality of SOI-Si layers 14, 15 differing appropriately in height are formed, thereby obtaining the element isolation regions 13 uniform in height from the semiconductor substrate 11 and forming desired element regions different in SOI-Si layer thickness. To appropriately change the film thickness of a single-crystal Si film (SOI-Si layer), and moreover, an amorphous Si film is deposited and heat treated, to form an epitaxial layer and unwanted parts are removed.

38. 发明专利

JPH10209453A SEMICONDUCTOR DEVICE AND ITS MANUFACTURE 失效
公开(公告)号：JPH10209453A
公开(公告)日：1998-08-07
申请号：JP647797
申请日：1997-01-17
申请人： TOSHIBA CORP
发明人： USHIKU YUKIHIRO
IPC分类号： H01L21/265 , H01L21/336 , H01L21/76 , H01L27/12 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To form a strained silicon layer through a simple method without generating dislocation defects. SOLUTION: A first silicon layer 1, an SiO2 layer 2, and a second silicon layer 3 are successively laminated for the formation of an SOI substrate, ions 4 are implanted into the first silicon layer 1, a dislocation defect region 5 is formed inside the first silicon layer 1 through a first annealing process, the first silicon layer 1 and the SiO2 layer 2 are separated from each other in terms of stress, and a tensile strain is induced in the second silicon layer 2 through a second annealing process carried out at least at the viscous fluid temperature of SiO2 .

39. 发明专利

JPH0684938A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH0684938A
公开(公告)日：1994-03-25
申请号：JP23074092
申请日：1992-08-31
申请人： TOSHIBA CORP
发明人： NINOMIYA NAOMI , ONO TOSHIKO , USHIKU YUKIHIRO
IPC分类号： H01L29/78 , H01L21/336 , H01L29/784
摘要： PURPOSE:To reduce etching-induced damage during formation of a buried gate electrode. CONSTITUTION:A thin polycrystalline silicon film and a resist pattern 4 are formed on a semiconductor substrate 1 through a gate oxide film in an area in which a gate electrode 7 is to be formed. Source and drain regions 5 are formed by ion implantation using the resist pattern 4 as a mask. Then, an insulating film 6 is selectively formed by a liquid phase growth technique, and a groove is formed by removing the resist pattern 4. Polycrystalline silicon 3 is deposited in the groove to form a buried gate electrode 7. With this structure, etching-induced damage during formation of the buried gate electrode, and influences of the resist on the gate oxide film can be eliminated.

40. 发明专利

JPH05335269A 失效
公开(公告)号：JPH05335269A
公开(公告)日：1993-12-17
申请号：JP13904292
申请日：1992-05-29
申请人： TOSHIBA CORP
发明人： TSUCHIAKI MASAKATSU , NISHIYAMA AKIRA , MORIMOTO TOYOTA , USHIKU YUKIHIRO , IWAI HIROSHI
IPC分类号： H01L21/28 , H01L21/8238 , H01L27/092 , H01L29/417 , H01L29/423 , H01L29/43 , H01L29/49 , H01L29/50
摘要： PURPOSE:To finish etching of gate electrode component films of different conductivities at the same period by injecting impurity ion to the gate electrode component films using a resist film as a mask, by removing the resist film and thereafter by removing an insulating film before etching it. CONSTITUTION:A gate electrode component film 105 is formed on a surface of a semiconductor substrate 101, resist films 106, 120 are formed thereon and impurity ion is injected to the gate electrode component film 105 using the resist film as a mask; thereby, gate electrode component films 105a, 105b of different conductivities are provided. Then, the resist films 106, 120 are peeled off, insulating films 107, 108 existing on the gate electrode component films 105a, 105b are peeled off, the gate electrode component films 105a, 105b are etched and gate electrodes 110a, 110b are formed. Thereby, etching of electrode component films of different conductivities can be finished at almost the same time.

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