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1. 发明专利

JPH0666459B2 失效
公开(公告)号：JPH0666459B2
公开(公告)日：1994-08-24
申请号：JP19386288
申请日：1988-08-03
申请人： TOKYO SHIBAURA ELECTRIC CO
发明人： KIKUCHI HIROSHI
IPC分类号： H01L23/52 , H01L21/28 , H01L21/3205 , H01L21/338 , H01L21/60 , H01L29/417 , H01L29/43 , H01L29/812 , H01L29/50 , H01L29/46

2. 发明专利

JPH06216401A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE 失效
公开(公告)号：JPH06216401A
公开(公告)日：1994-08-05
申请号：JP745993
申请日：1993-01-20
申请人： HITACHI LTD , HITACHI MICOM SYST KK
发明人： WATANABE MASASHI
IPC分类号： H01L27/082 , H01L21/331 , H01L21/8222 , H01L29/417 , H01L29/73 , H01L29/732 , H01L29/861 , H01L29/91 , H01L29/50
摘要： PURPOSE:To prevent the operation of a parasitic transistor resulting from the reverse breakdown strength of a diode element in a semiconductor integrated circuit device with a diode element formed by utilizing a lateral type bipolar transistor. CONSTITUTION:In a semiconductor integrated circuit, a P type semiconductor region 7 is arranged in a region, in which an anode wiring 11 is avoided, while a cathode wiring 12 is disposed on a main surface between the P type semiconductor region 8 of an N type epitaxial layer 2 and the P type semiconductor region 7 through an insulating film 5. A P type semiconductor region 4 is arranged on the main surface section of the N type epitaxial layer 2 on the outer circumferential surface of a diode element, and the anode wiring 11 is distributed on the main surface of the N type epitaxial layer 2 through the insulating film 5 between the P type semiconductor region 8 and the P type semiconductor region 4. An N type semiconductor region 6 having the same conductivity type as the N type epitaxial layer 2 and higher impurity concentration than the layer 2 is disposed under the anode wiring 11 of the main surface section of the N type epitaxial layer 2 between the P type semiconductor region 8 and the P semiconductor region 4.

3. 发明专利

JPH05235045A 失效
公开(公告)号：JPH05235045A
公开(公告)日：1993-09-10
申请号：JP3335492
申请日：1992-02-20
申请人： MITSUBISHI ELECTRIC CORP
发明人： KONO YASUTAKA
IPC分类号： H01L29/417 , H01L21/338 , H01L29/812 , H01L29/50
摘要： PURPOSE:To obtain a high-performance field-effect transistor having high gate breakdown strength characteristics by a method wherein a silicon oxide insulating film is formed between an isolation layer formed by an ion implantation and a gate electrode. CONSTITUTION:A semiconductor layer 6 is formed on a compound semiconductor substrate and a recess 3 is formed in a gate electrode 1 formation place of the layer 6. A silicon oxide insulating film 5 is formed on the layer 6 comprising the recess 3 and the film 5 other than the film 5 on the gate electrode 1 formation place is removed by dry etching. Then, the place under the removed film 5 is patterned and an isolation layer 4 is formed by an ion implantation of boron in the periphery of a resist pattern excluding the gate electrode 1 formation place. By providing the film 5 having a high breakdown voltage between a gate electrode 1 and the layer 4 in such a way, a dielectric strength between the gate electrode over the layer 5 and a drain electrode can be improved.

4. 发明专利

JPH0543291B2 失效
公开(公告)号：JPH0543291B2
公开(公告)日：1993-07-01
申请号：JP25414687
申请日：1987-10-08
申请人： TOKYO SHIBAURA ELECTRIC CO
发明人： INOE KAZUHIKO
IPC分类号： H01L21/28 , H01L21/337 , H01L29/10 , H01L29/417 , H01L29/808 , H01L29/50

5. 实用新型

JPS63188964U 失效
公开(公告)号：JPS63188964U
公开(公告)日：1988-12-05
申请号：JP7989287
申请日：1987-05-28
IPC分类号： H01L29/812 , H01L21/338 , H01L29/417 , H01L29/80 , H01L29/50

6. 实用新型

JPS5348593Y1 失效
公开(公告)号：JPS5348593Y1
公开(公告)日：1978-11-21
申请号：JP8310173
申请日：1973-07-12
IPC分类号： H01L21/60 , H01L21/331 , H01L23/48 , H01L29/70 , H01L29/73 , H01L29/861 , H01L29/42 , H01L29/50 , H01L29/91

7. 发明专利

JPS5338916B2 失效
公开(公告)号：JPS5338916B2
公开(公告)日：1978-10-18
申请号：JP8803072
申请日：1972-09-04
IPC分类号： H01L29/78 , H01L21/283 , H01L21/316 , H01L21/336 , H01L23/29 , H01L29/00 , H01L21/31 , H01L21/28 , H01L29/50

8. 实用新型

JPS5326931Y1 失效
公开(公告)号：JPS5326931Y1
公开(公告)日：1978-07-08
申请号：JP9894473
申请日：1973-08-23
IPC分类号： H01L21/768 , H01L21/331 , H01L23/522 , H01L29/40 , H01L29/70 , H01L29/73 , H01L23/54 , H01L29/50

9. 发明专利

JPS5316274B1 失效
公开(公告)号：JPS5316274B1
公开(公告)日：1978-05-31
申请号：JP1009671
申请日：1971-02-27
IPC分类号： H01L21/28 , H01L21/31 , H01L29/72 , H01L29/50

10. 发明专利

JPS5245196B2 失效
公开(公告)号：JPS5245196B2
公开(公告)日：1977-11-14
申请号：JP419175
申请日：1974-12-28
IPC分类号： H01L29/73 , H01L21/00 , H01L21/3205 , H01L21/331 , H01L21/74 , H01L21/76 , H01L21/763 , H01L23/52 , H01L23/535 , H01L27/00 , H01L29/417 , H01L21/90 , H01L29/50

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