专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

31. 发明专利

JPS6366415B2 失效
公开(公告)号：JPS6366415B2
公开(公告)日：1988-12-20
申请号：JP14358082
申请日：1982-08-19
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： WAKITA KOICHI , MATSUO SEITARO , KANBE HIROSHI , HATA SUSUMU
IPC分类号： H01L31/04 , C23C16/50 , H01L21/31 , H01L21/316 , H01L21/471 , H01S5/00

32. 发明专利

JPS639584B2 失效
公开(公告)号：JPS639584B2
公开(公告)日：1988-02-29
申请号：JP15509783
申请日：1983-08-26
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： ONO TOSHIRO , MATSUO SEITARO
IPC分类号： C23C14/34 , C23C14/35 , C23C14/46 , H01J37/34 , H01L21/203 , H01L21/285 , H01L21/31 , H05H1/18 , H05H1/46

33. 发明专利

JPS62200730A PLASMA PROCESSING DEVICE 失效
公开(公告)号：JPS62200730A
公开(公告)日：1987-09-04
申请号：JP4141586
申请日：1986-02-28
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： MATSUO SEITARO
IPC分类号： H01L21/205 , H01L21/302 , H01L21/3065
摘要： PURPOSE:To enlarge the irradiation region of ions without increasing the size of a magnetic coil and the titled plasma processing device, and to obtain the high through-put electronic cyclotron resonant plasma treatment device having excellent mass productivity by a method wherein the plane cross-section of a plasma-growing magnetic coil has an air-core region of rectangular shape or the shape approximate to it. CONSTITUTION:A plasma growing chamber and a sample chamber 2 having an almost rectangular plane cross-section respectively, and a plasma growing chamber 1 is surrounded by a magnetic coil 21 having the plane cross-section of almost rectangular air-core region. The coil of this invention is formed by one-dimensionally enlarging the coil heretofore in use in lateral direction (A-A' direction). The distance between the center part C' of the coil in B-B' direction and the D' of the coil is unchanged, and the cubic volume of the plasma growing chamber to be provided in said air-core part can be increased in proportion to magnifying ratio.

34. 发明专利

JP2003247065A THIN FILM DEPOSITION APPARATUS 审中-公开
公开(公告)号：JP2003247065A
公开(公告)日：2003-09-05
申请号：JP2002043629
申请日：2002-02-20
申请人： NIPPON TELEGRAPH & TELEPHONE , NTT AFTY CORP
发明人： JIN YOSHITO , SHIMADA MASARU , MATSUO SEITARO , ONO TOSHIRO
IPC分类号： C23C14/35 , H01L21/316 , H01L21/318
摘要： PROBLEM TO BE SOLVED: To provide a thin film deposition apparatus which can deposit a thin film of high quality in a highly uniform manner at a high speed by placing a plurality of materials for film deposition in one vacuum chamber. SOLUTION: In this thin film deposition apparatus to deposit a thin film on a substrate by sputtering particles of the materials for depositing the film from a plurality of sputtering sources by using ions of plasma flow, a plasma generating means generates plasma by the electronic cyclotron resonance discharge, the axes of rotational symmetry of a target are intersected with each other on the axis of rotation of a substrate sample table in the plurality of sputtering sources, and inclined with respect to the axis of rotation of a rotary sample table, and the substrate sample table comprises a rotating means which rotates the target in an inclined manner so that the intersection of the axis of rotational symmetry of the target with the axis of rotation of the substrate sample table is located in the direction opposite to the target with respect to the sample substrate for depositing the film, and a moving means to move the substrate sample table in the vertical direction. COPYRIGHT: (C)2003,JPO

35. 发明专利

JPH11111687A LOW-PRESSURE PLASMA ETCHING METHOD 失效
公开(公告)号：JPH11111687A
公开(公告)日：1999-04-23
申请号：JP26859797
申请日：1997-10-01
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： TAKAHASHI CHIHARU , MATSUO SEITARO
IPC分类号： C23F4/00 , H01L21/302 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To obtain sufficiently high selectivity ratio by improving etching selectivity of a silicon oxide thin film with a given accuracy of patterning in etching semiconductor and a metal by fluorine gas. SOLUTION: In an electron cyclotron resonance(ECR) system 1, a reaction gas is supplied to a plasma chamber 4 through a gas piping 5. A low-pressure reaction gas is excited to generate ECR plasma by ECR, using a magnetic field formed by a microwave and a first and a second magnetic coils 6 and 7 respectively. The ECR plasma is pulled out to a sample stage 9 as a plasma flow for use in etching by a diverging magnetic field formed in an etching chamber 8 by the magnetic coils 6 and 7. The reaction gas is set to consist of a gas containing only fluorine among halogen elements but no carbon, a mixture gas containing carbon dioxide gas, carbon fluoride gas, and argon.

36. 发明专利

JP2514862B2 失效
公开(公告)号：JP2514862B2
公开(公告)日：1996-07-10
申请号：JP3907291
申请日：1991-02-08
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： NISHIMURA HIROSHI , MATSUO SEITARO
IPC分类号： G01N22/00 , H05H1/00 , H05H1/46

37. 发明专利

JPH07221021A METHOD FOR DEPOSITING PLASMA 失效
公开(公告)号：JPH07221021A
公开(公告)日：1995-08-18
申请号：JP14068594
申请日：1994-06-01
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： TAKAHASHI CHIHARU , ONO TOSHIRO , MATSUO SEITARO
IPC分类号： C23C14/35 , C23C16/50 , C23C16/511 , H01L21/203 , H01L21/205
摘要： PURPOSE:To make it possible to promote reaction process in film formation, in which an oxide film is formed under oxygen partial pressure in a given range by applying a voltage larger than a given voltage that raises a current abruptly at a target electrode in a high voltage region. CONSTITUTION:A target electrode 15 is modified in the structure. A magnetic coil 11 generates a divergence field and the target electrode 15 has a partial magnetic field (B), in which part of magnetic flux generated from a certain part of the sputtering surface returns to another part thereof in the vicinity of a sputtering surface of the target electrode 15. The target electrode 15 is made of metal. In addition, a voltage larger than a given voltage that raises a current abruptly at the target electrode 15 in a voltage region of 100V or above is applied so that the oxygen partial pressure is adjusted to about 1 to 3X10 Pa while an oxide film is formed.

38. 发明专利

JPH07140639A MASK 失效
公开(公告)号：JPH07140639A
公开(公告)日：1995-06-02
申请号：JP1919193
申请日：1993-01-12
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： HARADA KATSUYUKI , MATSUO SEITARO
IPC分类号： G03F1/36 , G03F1/70 , H01L21/027 , H01L21/30 , G03F1/08
摘要： PURPOSE:To improve pattern forming accuracy by forming auxiliary patterns having a non-resolvable size on the peripheries or the inside of desired patterns. CONSTITUTION:This mask is composed of the desired patterns 101 consisting of light transparent parts, auxiliary pattern groups 102 consisting of the light transparent parts and the auxiliary patterns 103 constituting the auxiliary pattern groups 102. Namely, the strains of the exposure intensity profile appearing at the period terminating parts of a diagonal incident lighting system are decreased by arranging the auxiliary pattern groups 102 consisting of the auxiliary patterns 103 at the ends where periodicity ends and creating the condition under which the periodicity continues. The arrangement of the auxiliary patterns 103 in such a manner that the periodicity of the desired patterns 101 continue even at the ends and the formation of the non-resolvable auxiliary patterns or auxiliary pattern groups which do not remain as patterns after development are required to be compatible in such a case.

39. 发明专利

JPH0773236A DISPLAYING METHOD FOR CROSS SECTION STRUCTURE OF SEMICONDUCTOR 失效
公开(公告)号：JPH0773236A
公开(公告)日：1995-03-17
申请号：JP24358893
申请日：1993-09-06
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： TAZAWA SATOSHI , MATSUO SEITARO , OCHIAI KATSUYUKI , NAKAJIMA BAN
IPC分类号： H01L29/00 , G06F17/50 , H01L21/00 , H01L21/02
摘要： PURPOSE:To exactly plot the cross section structure of a semiconductor without using a complicate arithmetic processing and taking time for this processing. CONSTITUTION:The silicon pixel 31a of the most outer surface of a silicon area 31 is taken out and an oxide film 36 of a prescribed film thickness is virtually generated at the portion corresponding to a diffusion port 35 in this silicon pixel by taking the expansion coefficient when silicon is changed into silicon dioxide into consideration (b). Next, by the convolution integral for which a gaussian distribution function is used on the axis of this silicon pixel 31a, the shapes of the upper part and the lower part of the silicon pixel 31a are calculated and a shape suggestion line segment group 37 is obtained (c). Next, this shape suggestion line segment group 37 is plotted so that the silicon pixel 31a may be matched.

40. 发明专利

JPH0773235A DISPLAYING METHOD FOR CROSS SECTION STRUCTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH0773235A
公开(公告)日：1995-03-17
申请号：JP24358793
申请日：1993-09-06
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： TAZAWA SATOSHI , MATSUO SEITARO , OCHIAI KATSUYUKI , NAKAJIMA BAN
IPC分类号： H01L29/00 , G06F17/50 , H01L21/00 , H01L21/02
摘要： PURPOSE:To exactly plot the cross section structure of a semiconductor without using a complicated arithmetic processing and taking time for this processing. CONSTITUTION:By plotting the basic graphic of the upper half of a longitudinal ellipse for approximating a mask area 53 to the working characteristic drawing of spatter etching by the pixel value which is the same as the pixel of the mask area 53, the state of a deposition is obtained (b). Next, by plotting a rectangle to be the basic graphic for performing an approximation by the pixel value which is the same as the pixel of an air area 521, the state of an etching is obtained (e). By plotting by using the basic graphic appoximated by a line segment and by the pixel value which is the same as the air area, the state of the etching of a semiconductor area 52 is obtained by defining the mask area 53 as a mask.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式