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31. 发明专利

JPH10335307A METHOD FOR DETECTING END OR PROCESS AND DEVICE USING THE SAME 失效
公开(公告)号：JPH10335307A
公开(公告)日：1998-12-18
申请号：JP13643297
申请日：1997-05-27
申请人： HITACHI LTD
发明人： YAMAMOTO SEIJI , TAJI SHINICHI
IPC分类号： G01N21/67 , H01L21/027 , H01L21/302 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To enable a high precise monitor of species in plasma etching and facilitate end detection by a method wherein light receiving means is disposed in a process vacuum chamber, and after emitted lights of species in plasma are collected, a signal detected by dispersion is calculated to decide an end. SOLUTION: Elements collecting emitted lights of plasma are disposed at three positions. That is, an optical fiber 109 is disposed just after a wafer and in a sample pedestal, and collects lights from immediately above the wafer. An optical fiber 110 is disposed on a side adjacent to a wafer and collects efficiently emitted lights from a region of high reaction product concentration near the wafer. An optical fiber 111 is apart from the wafer and collects emitted lights of plasma having little reaction product from aside. A spectroscope 112 is disposed prior to an atomosphere side of an optical fiber and disperses emitted lights to be detected by a photomultiplier 113. The fetched lights are detected and its intensity is measured, and when the strength reaches a predetermined value, an end is decided.

32. 发明专利

JPH09266199A METHOD AND APPARATUS FOR EVALUATING PLASMA 失效
公开(公告)号：JPH09266199A
公开(公告)日：1997-10-07
申请号：JP7585796
申请日：1996-03-29
申请人： HITACHI LTD
发明人： ITABASHI NAOSHI , YOKOGAWA KATANOBU , TAJI SHINICHI , YAMAMOTO SEIJI
IPC分类号： G01N27/62 , C23F4/00 , G01N21/27 , H01L21/205 , H01L21/302 , H01L21/3065 , H05H1/00
摘要： PROBLEM TO BE SOLVED: To evaluate a plasma for machining works by accurately analyzing the electrons, ions, neutral particles and lights incident on a substrate as well as temp., potential and current on the substrate in the same condition as the substrate being worked, thereby obtaining the mutual relations of them. SOLUTION: Ion detection elements 102, light detection elements 103, temp. detection elements 104, and current detection elements 105 are disposed on a substrate 101 covered with an insulation film to enable the analysis of the density and energy of incident ions film, spectroscopic analysis and evaluation of the distribution. Thus such various analyzing units are mounted on the substrate to enable the accurate evaluation of the property of a plasma for machining works in the same condition as the actual settings of substrates to be worked. Thus it is possible to attain the development, improvement and control of the processes and apparatus according to reliable guidances which were made cut and try as before.

33. 发明专利

JPH09260352A PLASMA PROCESSOR AND PLASMA PROCESSING METHOD 失效
公开(公告)号：JPH09260352A
公开(公告)日：1997-10-03
申请号：JP6249396
申请日：1996-03-19
申请人： HITACHI LTD
发明人： KAJI TETSUNORI , KAZUMI HIDEYUKI , TAJI SHINICHI , OTSUBO TORU
IPC分类号： H05H1/46 , C23C16/50 , C23C16/509 , C23C16/515 , C23F4/00 , H01L21/302 , H01L21/3065 , H01L21/68 , H01L21/683
摘要： PROBLEM TO BE SOLVED: To provide a plasma processor and a plasma processing method, which obtain a narrow ion energy distribution with excellent controllability to enhance selectivity, etc., of a plasma process. SOLUTION: This plasma processor has a vacuum processing chamber, a sample pedestal 15 for arranging a sample 40 processed in this vacuum processing chamber, and plasma generating means containing a high frequency power source 16. There are provided a pair of parallel plane electrodes 12, 15, electrostatic attracting means 20, 22, 23 for holding the sample 40 on a sample pedestal 15 by electrostatic attracting force, and pulse bias applying means 17 for applying a pulse bias voltage to the sample 40, and a high frequency power source of 20MHz to 500MHz is applied as the high freqency power source 16, and further a vacuum processing chamber 10 is evacuated to 5mTorr to 40mTorr by a vacuum pump 18.

34. 发明专利

JPH06169073A WRITING/ERASING METHOD OF SEMICONDUCTOR MEMORY 失效
公开(公告)号：JPH06169073A
公开(公告)日：1994-06-14
申请号：JP31958992
申请日：1992-11-30
申请人： HITACHI LTD
发明人： USHIYAMA MASAHIRO , KATO MASATAKA , TANAKA TOSHIHIRO , ADACHI TETSUO , KUME HITOSHI , OJI YUZURU , TAJI SHINICHI
IPC分类号： H01L21/8247 , H01L27/115 , H01L29/788 , H01L29/792
摘要： PURPOSE:To draw out electrons and positive holes stored in a gate insulating film to an electrode side or a substrate side, suppress the deterioration of the gate insulating film caused by a re-writing operation and improve a re-writing strength by a method wherein writing or erasing pulses are time-divided and pulses whose polarities are opposite to each other are applied. CONSTITUTION:For instance, after pulses of -7V and +3.3V are applied t8 a control gate electrode 7 and a source 8 respectively for 1 microsecond while a drain 9 is opened and a substrate 1 is grounded, successively pulses of 6V and 0V are applied to the control gate electrode 7 and the source 8 respectively for 0.5 microsecond while the drain 9 is opened and the substrate 1 is grounded. After the above mentioned bidirectional stresses are applied for 10 cycles, an operation for confirming a threshold is performed. Thus letting one re-writing be composed of one writing, one erasing and the number of the re-writing operations are repeated. With this constitution, electrons and positive holes injected into an insulating film 6 are discharged, quantities of electrons and positive holes captured in the insulating film 6 are reduced and the characteristic fluctuation of the insulating film 6 is suppressed, so that the breakdown strength of the insulating film 6 can be improved.

35. 发明专利

JPH0614519B2 失效
公开(公告)号：JPH0614519B2
公开(公告)日：1994-02-23
申请号：JP4907384
申请日：1984-03-16
申请人： HITACHI LTD
发明人： TAJI SHINICHI
IPC分类号： C23F4/00 , H01L21/302 , H01L21/3065

36. 发明专利

JPH05136089A MICROWAVE PLASMA ETCHING APPARATUS AND ETCHING METHOD THEREFOR 失效
公开(公告)号：JPH05136089A
公开(公告)日：1993-06-01
申请号：JP4633191
申请日：1991-03-12
申请人： HITACHI LTD
发明人： TSUJIMOTO KAZUNORI , TAJI SHINICHI , ARAI MAKOTO
IPC分类号： C23F4/00 , G01N24/14 , G01R33/64 , H01L21/302 , H01L21/3065 , H01L21/31 , H05H1/46
摘要： PURPOSE:To obtain a microwave plasma etching apparatus in which a high density plasma is obtained in a wide range in a discharge tube by providing control means for varying a magnetic field distribution in a gas plasma timingly. CONSTITUTION:A microwave excited by a magnetron 4 is propagated to a quartz discharge tube 16 through a waveguide 5, and etching gas introduced from a gas switching control system 6 is excited by a microwave to become a plasma 1. A wafer 8 mounted on a sample base 7 is exposed, and plasma- processed. Liquid nitrogen 10 can be so supplied from a vessel 11 as to cool the wafer 8 to a low temperature. A heater 9 is provided on the base 7. The wafer is introduced from a sample replacing chamber 2 into a processing chamber 17 through a gate valve 3. Upper, intermediate and lower stage coils 12, 13, 14 are mounted on annular solenoid coil at the outside of the tube. A voltage to be applied to the coils is supplied from a power source 15, and a timing change of the voltage is controlled by a control circuit 18.

37. 发明专利

JPH04176868A SURFACE PROTECTING METHOD 失效
公开(公告)号：JPH04176868A
公开(公告)日：1992-06-24
申请号：JP30241190
申请日：1990-11-09
申请人： HITACHI LTD
发明人： ARAI MAKOTO , TSUJIMOTO KAZUNORI , TAJI SHINICHI
IPC分类号： C23C16/00 , C23C16/02 , C23F4/00 , H01L21/302 , H01L21/3065 , H01L21/312
摘要： PURPOSE:To prevent the surfaces of various materials after dry etching from being oxidized by dry-etching these surfaces by the plasma of reactive gas and thereafter treating them by the plasma of gaseous carbon compd. and forming a polymer film on these surfaces. CONSTITUTION:When dry etching treatment is performed on the surface of material such as single crystalline Si, polycrystalline Si, Si3N4, Al, Mo, WSi2, MoSi2, TiSi2, W and TaSi2 and thereafter this material is allowed to stand, an oxidative film is naturally formed on the etched surface. Therefor in order to prevent it, a polymer film is formed by the plasma of gaseous carbon-based compd. In this case, a high frequency discharge parallel plane type plasma etching device, etc., are used. As a gaseous raw material, CF4, CHF3, CClF3, CCl4, CHClF2, and gas contg. the other carbon are used. Plasma treatment of the gas is performed at

38. 发明专利

JPH0432264A SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH0432264A
公开(公告)日：1992-02-04
申请号：JP13715690
申请日：1990-05-29
申请人： HITACHI LTD
发明人： OJI YUZURU , USHIYAMA MASAHIRO , YAMANAKA TOSHIAKI , YOSHIDA ISAO , TAJI SHINICHI
IPC分类号： H01L29/78 , H01L21/336 , H01L29/786
摘要： PURPOSE:To obtain a thin film transistor having high performance by connecting only one of crystal grains of a polycrystalline silicon layer to a diffused layer for forming a source, connecting only the other one to a diffused layer for forming a drain, and reducing in thickness at a part in contact with a gate insulating film. CONSTITUTION:A diffused layer to become a gate electrode 22 is formed partly on a p-type silicon substrate 20 by P ion implanting, and a gate insulating film 28 is formed thereon by thermally oxidizing. Further, a p-type polycrystalline silicon layer 27 is formed thereon by a CVD method, and n-type diffused layers to become a source 26a and a drain 26b are formed at both ends by P ion implantation. Then, the layer 17 is annealed at 650 deg.C, and when it is further annealed at 1100 deg.C, an SiO2 layer 21a is formed along crystalline grain boundary 25, the layer 27 is further covered with an interlayer insulating film 36, connection holes 37, 38 are partly opened, the source 27a, the drain 26b are connected to wiring layers 290, 291 to form a thin film MOS transistor. As a result, a transistor having high performance is obtained.

39. 发明专利

JPH03132022A METHOD AND APPARATUS FOR MANUFACTURING SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH03132022A
公开(公告)日：1991-06-05
申请号：JP26891189
申请日：1989-10-18
申请人： HITACHI LTD
发明人： YOKOYAMA NATSUKI , HINODE KENJI , MIYAZAKI HIROSHI , TAJI SHINICHI
IPC分类号： H01L23/52 , H01L21/28 , H01L21/285 , H01L21/3205
摘要： PURPOSE:To properly form highly electro-migration-resistant reliable aluminum alloy film and titanium-tungsten alloy film by forming the required thin film on a sample and exposing the tihn film to the desired plasma withous exposing to air. CONSTITUTION:When a titanium-tungsten thin film 11 is formed on an oxide film 10 on a sample silicon substrate 12 in a film formation chamber of the required degree of vacuum and sent to a plasma treatment chamber, in which nitrogen is introduced, for plasma treatment without exposing to air, a nitrided region 13 is formed in the film 11. When an aluminum alloy wiring film 14 containing copper is formed on the film 11 by the sputtering method and heat- treated, a semiconductor device having a highly electro-migration-resistant reliable aluminum alloy film/titanium-tungsten alloy film laminate wiring is properly made.

40. 发明专利

JPH01147832A FORMING METHOD FOR PATTERN 失效
公开(公告)号：JPH01147832A
公开(公告)日：1989-06-09
申请号：JP30561287
申请日：1987-12-04
申请人： HITACHI LTD
发明人： YOSHIMURA TOSHIYUKI , TAJI SHINICHI , OKAZAKI SHINJI
IPC分类号： H01L21/302 , H01L21/3065
摘要： PURPOSE:To omit a step of forming an SiO2 film and to form an accurate pattern by forming the SiO2 film by exposing the surface of an Si substrate to an O2 plasma, and processing the substrate by dry etching with the film as a mask. CONSTITUTION:A resist 2 on an Si substrate 1 is radiated with a particle beam 3 thereby to form a latent image of a pattern. A development is conducted for a short time to form the uneven part of the pattern on the surface of the resist 2. A whole is placed at a low temperature, dry etched in an O2 plasma, thereby forming an exposed part and an unexposed part on the substrate 1. An SiO2 film 5 is formed on the exposed part of the substrate 1 by dry etching it in the O2 plasma. When the residual resist is removed, an SiO2 mask pattern for forming a pattern on the substrate 1 is obtained. It is dry etched at a low temperature in an etching gas plasma having high reactivity with Si thereby to form a pattern on the substrate 1.

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