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31. 发明专利

JPH01303757A DRIVE CIRCUIT FOR ELEMENT EQUIPPED WITH CAPACITIVE IMPEDANCE 失效
公开(公告)号：JPH01303757A
公开(公告)日：1989-12-07
申请号：JP13271588
申请日：1988-06-01
申请人： HITACHI LTD
发明人： AKIYAMA TOSHIYUKI , MIMURA ITARU , OZAWA NAOKI , TAKAHASHI KENJI
IPC分类号： G09G3/28 , H01L21/339 , H01L29/76 , H01L29/762 , H04N3/14 , H04N5/335 , H04N5/341 , H04N5/372 , H04N5/376
摘要： PURPOSE:To reduce power consumption in a circuit enabling drive on rectangular waves by a method wherein an inductance element is connected across driving terminals, a first switching circuit is provided between a driving voltage source and a driving terminal, and a second switching circuit is inserted in series with the inductance element. CONSTITUTION:Between a charge-coupled device (CCD) driving terminal and a driving voltage source, a first switching circuit is inserted and, in series with an inductance element arranged between driving terminals or between a driving terminal and a semiconductor substrate, a second switching circuit is inserted. The rise and fall of the driving terminal voltage is effected on a low voltage by utilizing LC resonance and, after a change in the terminal voltage, the terminals are connected to the driving voltage source for the sustenance of a constant voltage. Using this design, an approximately rectangular driving voltage may be applied to the CCD driving terminals. With the inversion of the driving voltage being accomplished on the strength of LC oscillation, the CCD driving power may be kept low.

32. 发明专利

JPH01238054A SOLID-STATE IMAGE SENSING DEVICE 失效
公开(公告)号：JPH01238054A
公开(公告)日：1989-09-22
申请号：JP6331588
申请日：1988-03-18
申请人： HITACHI LTD , HITACHI DEVICE ENG
发明人： TAKAHASHI KENJI , OZAWA NAOKI , AKIYAMA TOSHIYUKI , MIMURA ITARU , NAKANO TAKAHIRO , KUNIMASA YOSHIO
IPC分类号： H01L27/14 , H01L27/146 , H04N5/335 , H04N5/341 , H04N5/359 , H04N5/369 , H04N5/374 , H04N5/3745
摘要： PURPOSE:To realize low noise by constituting the title device by a horizontal signal conductor group which is used commonly when reading out output of a photoelectric sensing element, a feedback preamplifier initial stage group for reading out current connected to each of the horizontal signal lines, and a plurality of common line groups which connect the preamplifier initial stage group. CONSTITUTION:An initial stage transistor is provided to a device of horizontal output line of each stage of preamplifier initial stage section 1-1, 1-2,...1-n,.... Load resistance 33 and a switch 35 are connected in series at an output end of the initial stage transistor 31 and connected to a common power source terminal 37. A signal load resistance 32 and switch 34 are connected to an input terminal of the initial stage transistor, which is connected to a common line 13 in the outside of a block 1-1. An output end of the initial stage transistor 31 is wired to a common line 12 through a switch 36. Switches 34, 35 and 36 in a block make ON-OFF operation simultaneously by vertical scanning pulse 23. Owing to this equivalent circuit, the capacity related to equivalent noise resistance of the initial stage preamplifier is only CH, Ci. According to this device structure, substantial reduction of noises can be realized, thus improving S/N.

33. 发明专利

JPH01215185A CONTOUR COMPENSATION CIRCUIT 失效
公开(公告)号：JPH01215185A
公开(公告)日：1989-08-29
申请号：JP3938388
申请日：1988-02-24
申请人： HITACHI LTD
发明人： MIMURA ITARU , ETO YOSHIZUMI , TAKAHASHI KENJI , AKIYAMA TOSHIYUKI , OZAWA NAOKI
IPC分类号： H04N5/208
摘要： PURPOSE:To prevent the reduction of resolution caused in the image pickup of a moving object by setting a contour compensation based on the movement of a detected copying body. CONSTITUTION:The circuit consists of a contour compensation circuit 2 compensating the resolution, a movement detection circuit 1 and a compensation characteristic decision circuit 3, the video signal input of the circuit is branched into two, one is given to the movement detection circuit 1 and the other is inputted to the contour compensation circuit 2. The movement detection circuit 1 detects the movement of the object from the inputted signal, decides the area for resolution compensation and the compensation characteristic decision circuit 3 applies the correction signal giving a high resolution to the area decided by the movement detection circuit 1 to the circuit 2. On the other hand, a correction signal to reduce the correction quantity is supplied to the still section. Thus, a video signal is obtained at the output terminal of the contour compensation circuit 2 with high resolution with respect to the moving object and without increased noise for the still section.

34. 发明专利

JPH01114287A CHROMA SIGNAL PROCESSOR OF VENEER COLOR CAMERA 失效
公开(公告)号：JPH01114287A
公开(公告)日：1989-05-02
申请号：JP27015987
申请日：1987-10-28
申请人： HITACHI LTD
发明人： OZAWA NAOKI , TAKAHASHI KENJI , AKIYAMA TOSHIYUKI , MIMURA ITARU , NAKANO TAKAHIRO
IPC分类号： H04N9/64 , H04N9/07
摘要： PURPOSE:To prevent the mixture of other chrominance components and the occurrence of line crawl by obtaining the R, G and B signals of straight polarity in chroma signal demodulation circuits of same constitution. CONSTITUTION:Subtraction circuits 141 and 142 which obtain the difference signals between the output signals of separation circuits 121-128 which execute separation for respective picture element signals and the output signals of amplifier circuits 131-138, delay circuits 161-163 which delay the outputs for one horizontal scan period, and addition circuits 191-193 which add the output signals of the subtraction circuits and those of the delay circuits are provided. One chroma signal demodulation circuit is constituted by a pulse generation circuit 18 generating a pulse signal for controlling the separation circuits 121-128 in such a way that the objective picture element signal is added to the input side of the subtraction signals of the subtraction circuits 141 and 142 and the input side of signals to be subtracted, and the chroma signal decodemodulation circuits are provided for the number of the chroma signals to be demodulated. Thus, other chrominance components are impervious to be mixed and the occurrence of line crawl can be prevented.

35. 发明专利

JPS6318671A SEMIOCNDUCTOR DEVICE AND ITS MANUFACTURE 失效
公开(公告)号：JPS6318671A
公开(公告)日：1988-01-26
申请号：JP16190086
申请日：1986-07-11
申请人： HITACHI MICROCUMPUTER ENG , HITACHI LTD
发明人： KITAMURA YUKINORI , MORI SHUNJI , OGURA SADAO , TAKAHASHI KENJI , YAMAZAKI KOICHI
IPC分类号： H01L29/73 , H01L21/331 , H01L27/08 , H01L29/72 , H01L29/732
摘要： PURPOSE:To obtain a semiconductor device characterized by a large base width of a p-n-p transistor, small dispersion in hFE and a small area of an element, by forming a p-type layer, which becomes an emitter, so that the diffusing depth of said layer is shallower than the depth of a p-type layer, which becomes the base of an n-p-n transistor. CONSTITUTION:An n Si layer 2 is formed on a substrate by epitaxial growing. An n embedded layer 3 is buried in the layer 2. A p embedded layer 4 is buried in a part of the layer 2. B ions are partially implanted, and a p layer 6 is connected to a p embedded layer 5. A collector lead-out p layer 12 of a p-n-p transistor TR is connected to the layer 4. Then, P and B ions are implanted, and a collector lead-out n layer 7 and a base p layer 8 are formed. Then, an emitter n layer 9 is diffused by implanting As ions. At the same time, an n layer 11 for base lead-out part is formed. B ions are implanted to a shallow part in order to form said emitter and diffused. A p-type layer 13 is formed. A shallow highresistance p-type layer 14 is formed in the same process. Contact holes are provided in the surface oxide film. An Al electrode is formed by the evaporation of Al, annealing and patterning.

36. 发明专利

JPS634623A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS634623A
公开(公告)日：1988-01-09
申请号：JP14689586
申请日：1986-06-25
申请人： HITACHI LTD
发明人： OGURA SADAO , YAMAZAKI KOICHI , YAMANAKA KOJI , TANIGUCHI HIROYUKI , TAKAHASHI KENJI
IPC分类号： H01L21/316
摘要： PURPOSE:To eliminate side-etched parts and so forth at electrode parts and improve moisture-resistant properties by a method wherein different etchants are applied to a 3rd insulating film and to 1st and 2nd insulating films when through-holes are formed and the through-hole provided in the 3rd insulating film has a larger diameter than the through-holes in the 1st and the 2nd insulating films. CONSTITUTION:By forming an Si3N4 film which is a non-SiO2 system insulating film between a phosphorus silicate glass (PSG) film and an Al wiring and directly under the Al wiring as a passivation film, as completely different etchants are employed for etching, contact holes can be formed by etching regardless of the etch rate. At that time, the diameter S2 of the contact hole 6' formed in the Si3N4 film which is a 3rd insulating film is made to be larger than the diameter S1 of the contact-hole 6 formed in 1st and 2nd insulating films 2 and 4. With this constitution, an overhang created by the side-etched part of the PSG film can be completely eliminated.

37. 发明专利

JPS63154A SOLID-STATE IMAGE SENSING ELEMENT 失效
公开(公告)号：JPS63154A
公开(公告)日：1988-01-05
申请号：JP14374986
申请日：1986-06-19
申请人： HITACHI LTD
发明人： OBA SHINYA , TAKAHASHI KENJI , AKIYAMA TOSHIYUKI , OZAWA NAOKI , YOSHIDA ISAO , OZAKI TOSHIBUMI
IPC分类号： H01L27/148 , H01L27/146 , H04N5/335 , H04N5/357 , H04N5/369 , H04N5/372 , H04N5/374
摘要： PURPOSE:To increase mutual conductance without spreading the area of a gate and augmenting the capacitance of an input gate, and to lower noises by forming a transistor, impurity distribution of which under the gate is not equalized, on a head section for an output means. CONSTITUTION:A first P-type well 5, an N semiconductor layer 6 and a second P-type well are shaped onto an N-type substrate 4 in succession, repeating ion implantation and impurity diffusion. Since a second P-type semiconductor layer 7 is extended from the source 25 side, impurity diffusion under a gate 27 is not equalized, and threshold voltage on the source 25 side is made larger than that on the drain 26 side. Accordingly, the mutual conductance of the transistor can be augmented without remarkably increasing the area of the gate 27, input capacitance, and noises are reduced.

38. 发明专利

JPS61256884A NOISE REDUCER FOR COLOR TELEVISION 失效
公开(公告)号：JPS61256884A
公开(公告)日：1986-11-14
申请号：JP10463886
申请日：1986-05-09
申请人： HITACHI LTD
发明人： NISHIZAWA SHIGEKI , NAGAHARA SHUSAKU , TAKAHASHI KENJI , FUKINUKI NORIHIKO
IPC分类号： H04N9/64
摘要： PURPOSE:To prevent effectively a color bleeding and to improve a noise reducing effect in a section except for an outline section by changing over an addition rate of a delayed chrominance signal by an existence of the outline section vertically existing on a television scope. CONSTITUTION:There are provided an adder circuit 3 for adding a chrominance signal from an input terminal 1 and a chrominance signal delayed for one horizontal scanning period by a delay circuit 4 and fed back, a phase reversing circuit 5 for reversing the phase of the chrominance signal, and variable attenuators 10A, 10B for attenuating an amplitude of the chrominance signal from the input terminal 1 and the delay circuit 4. Transfer functions of the variable attenuators 10A, 10B are respectively (1-K), K. An outline detecting circuit 8 detects an outline section existing in a vertical scanning direction on a scope of the television by a luminance signal from an input terminal 7 and sets a range of a K value to 0.3

39. 发明专利

JPS61235694A HEAT TRANSFER TUBE 失效
公开(公告)号：JPS61235694A
公开(公告)日：1986-10-20
申请号：JP7731085
申请日：1985-04-11
申请人： HITACHI CABLE , HITACHI LTD
发明人： KAWAMATA OSAMU , OTANI TADAO , OIZUMI KIYOSHI , KOTO HIROSHI , KUWABARA HEIKICHI , TAKAHASHI KENJI
IPC分类号： F28F1/08 , F28F1/40
摘要： PURPOSE:To reduce pressure loss and improve heat transmittance remarkably by a method wherein protuberances consisting of smooth curves, and parts between protuberances, whose heights are zero or lower than the heights of said protuberances, are arranged alternately and regularly on the inner surface of the heat transfer tube along a spiral curve. CONSTITUTION:The rows of the protuberance 3, whose sectional configuration at the bottom surface and the arbitrary heights is circle, ellipse or unsymmetri cal elliptic curve and whose sectional area is decreased to the direction of height, are arranged on the inner surface of the heat transfer tube 1 with a given interval along a spiral curve so as to be adiabatic while the part between the protuberances are formed so as to have a height of zero or smaller than the height of the protuberance. Further, the area of spaces 8 is made so as to be 20-35% of an area between the maximum inner diameter 6 and the minimum inner diameter 5. As a result, pressure loss may be reduced, the heat transmittance may be improved remarkably. This process can greatly contribute to increase in the efficiency of equipment utilizing this heat transfer tube.

40. 发明专利

JPS6170391A Evaporating heat transfer wall 失效
标题翻译：蒸发热交换器墙
公开(公告)号：JPS6170391A
公开(公告)日：1986-04-11
申请号：JP19157884
申请日：1984-09-14
申请人： Hitachi Cable Ltd , Hitachi Ltd
发明人： KUWABARA HEIKICHI , TAKAHASHI KENJI , YANAGIDA TAKEHIKO , NAKAYAMA HISASHI , SUGIMOTO SHIGEO , YOSHIDA HIROMICHI , OIZUMI KIYOSHI
IPC分类号： F28F13/02 , F28F1/10 , F28F1/12 , F28F1/40 , F28F13/18
CPC分类号： F28F13/18
摘要： PURPOSE:To improve the heat transfer performance by providing projections in the inner parts of opening communicating minute cavities with the external part, and determining, in a plan view of the evaporating heat transfer wall, the ratio of the projection area to the opening area to a specific ratio. CONSTITUTION:Below the surface of a heat transfer wall 1, which makes contact with a fluid, are provided a large number of adjacent fins, thin and long cavities at minute intervals, and a number of minute holes 5 which bring the cavities 2 into communication with the external part are disposed regularly along the longitudinal direction of the cavities 2 at the ceiling 4 of the cavities 2. Within the holes 5 are provided projections 6 protruding in a direction intercrossing holes 5 from the vicinities of holes including holes 5, respectively. When the heat transfer wall 1 is viewed in a plan, the ratio of the area of the projection 6 to the opening area is set in a range of from 0.4-0.8. As a result, the heat transfer efficiency is improved further and it can contribute to the miniaturization and the achievement of higher performance of apparatuses using the heat transfer wall.
摘要翻译：目的：通过在与外部开口连通的微小腔的内部部分提供突起来提高传热性能，并且在蒸发传热壁的平面图中确定投影面积与开口面积的比率具体比例。构成：在与流体接触的传热壁1的表面下方设有大量相邻的翅片，以较小间隔的薄且长的空腔，以及使空腔2进入通信的多个微孔5 外部部分沿着空腔2的空腔2的纵向方向规则地设置在空腔2的天花板4处。在孔5内设置有突出部6，突出部6沿着与包括孔5的孔附近的交叉孔5的方向突出。当在平面图中观察传热壁1时，突起6的面积与开口面积的比率被设定在0.4-0.8的范围内。结果，进一步提高了传热效率，并且能够有助于使用传热壁的设备的小型化和更高性能的实现。

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