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31. 发明专利

JP2006211805A Switching device 审中-公开
标题翻译：切换设备
公开(公告)号：JP2006211805A
公开(公告)日：2006-08-10
申请号：JP2005019647
申请日：2005-01-27
申请人： Kansai Electric Power Co Inc:The , Nissin Electric Co Ltd , 日新電機株式会社 , 関西電力株式会社
发明人： SUGAWARA YOSHITAKA , ASANO KATSUNORI , MINOWA YOSHIBUMI , SAJI HIROYUKI , SHIKATA TOSHIHIKO
IPC分类号： H02M7/48
摘要： PROBLEM TO BE SOLVED: To provide a structure capable of protecting a gate drive circuit board and a signal line connected to a switching element consisting of a wide gap semiconductor element of high temperature operation from the heat of switching element. SOLUTION: A power convertor 14 stores a switching element 11 consisting of a wide gap semiconductor and a gate drive circuit board 12 which is connected to the switching element 11 to supply a drive signal to the switching element 11 in a housing 15, and converts a DC voltage into AC voltage by on/off operation of switching element, which is supplied to a load. A signal line 13 that transmits the drive signal from the gate drive circuit board 12 to the switching element 11 of an inverter circuit, comprises a flat conductor having heat dissipation characteristics. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种能够保护栅极驱动电路板和连接到由开关元件的热量的高温操作的宽间隙半导体元件构成的开关元件的信号线的结构。电源转换器14存储由宽间隙半导体构成的开关元件11和与开关元件11连接的栅极驱动电路基板12，以向壳体15内的开关元件11供给驱动信号，并通过供给负载的开关元件的开关动作将直流电压转换为交流电压。将来自栅极驱动电路板12的驱动信号传输到逆变器电路的开关元件11的信号线13包括具有散热特性的扁平导体。版权所有（C）2006，JPO＆NCIPI

32. 发明专利

JP2012156152A Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：JP2012156152A
公开(公告)日：2012-08-16
申请号：JP2011011080
申请日：2011-01-21
申请人： Kansai Electric Power Co Inc:The , 関西電力株式会社
发明人： NAKAYAMA KOJI , IZUMI TORU , ASANO KATSUNORI , MITSUYANAGI YOICHI
IPC分类号： H01L23/29 , C08G77/12 , C08G77/20 , C09D5/25 , C09D183/04 , H01L21/312 , H01L23/31
CPC分类号： H01L24/05 , H01L2224/02166 , H01L2224/04042 , H01L2224/4847 , H01L2924/12036 , H01L2924/12041 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device in which voltage resistance can be prevented from being lowered by avoiding generation of an ununiform charge distribution between a surface protective film composed of SiOand a coating part composed of a thermosetting resin containing polysiloxane as a main component.SOLUTION: In a semiconductor device, charge accumulated on the interface of an SiOsurface protective film 16 and a coating part 23 composed of a silicon resin can be reduced by coating the surface of an SiC pn junction diode 10, and setting the thickness of the surface protective film 16 composed of SiOto 2 μm thereby decreasing the capacitance of the SiOsurface protective film 16. An electric field on the interface of the surface protective film (SiOfilm) 16 and the coating part 23 can be reduced by separating the interface of the SiOsurface protective film 16 and the coating part 23 from the interface of the surface protective film (SiOfilm) 16 and a wide gap semiconductor (SiC, or the like) on which a high electric field is applied. Consequently, dielectric breakdown on the interface of the surface protective film 16 and the coating pat 23 can be prevented.
摘要翻译：要解决的问题：提供一种半导体器件，其中可以通过避免在由SiO 2“构成的表面保护膜之间产生不均匀的电荷分布来防止电压降低， SB＆gt;以及由含有聚硅氧烷作为主要成分的热固性树脂构成的涂布部。解决方案：在半导体器件中，可以通过涂覆来减少积聚在SiO 2 表面保护膜16和由硅树脂构成的涂层部分23的界面上的电荷 SiC pn结二极管10的表面，并将由SiO 2 组成的表面保护膜16的厚度设定为2μm，从而减小SiO 2 表面保护膜16.表面保护膜（SiO 2 膜）16和涂层23的界面上的电场可以是通过从表面保护膜（SiO 2“）的界面分离SiO 2 表面保护膜16和涂层部分23的界面， / SB>膜）16和施加高电场的宽间隙半导体（SiC等）。因此，可以防止表面保护膜16和涂层片23的界面上的电介质击穿。版权所有（C）2012，JPO＆INPIT

33. 发明专利

JP2012033618A Bipolar semiconductor element 审中-公开
标题翻译：双极半导体元件
公开(公告)号：JP2012033618A
公开(公告)日：2012-02-16
申请号：JP2010170617
申请日：2010-07-29
申请人： Central Res Inst Of Electric Power Ind , Kansai Electric Power Co Inc:The , 財団法人電力中央研究所 , 関西電力株式会社
发明人： NAKAYAMA KOJI , ASANO KATSUNORI , TSUCHIDA SHUICHI , MIYAZAWA TETSUYA
IPC分类号： H01L29/861 , H01L21/205 , H01L21/331 , H01L21/336 , H01L29/06 , H01L29/12 , H01L29/15 , H01L29/732 , H01L29/739 , H01L29/744 , H01L29/78
摘要： PROBLEM TO BE SOLVED: To provide a bipolar semiconductor element capable of keeping a forward voltage low by reducing a stress at an interface between a drift layer and a layer adjacent to the drift layer.SOLUTION: In a pin diode 20, each of upper limits of the impurity concentration of an n-type SiC buffer layer 22: (5×10cm); (7×10cm); and (10×10cm), is set corresponding to each of regions of the film thickness of an n-type SiC drift layer 23: (300 μm or less and more than 200 μm); (200 μm or less and more than 100 μm); and (100 μm or less and more than 50 μm), respectively. This can reduce a stress at an interface between the n-type SiC drift layer 23 and the n-type SiC buffer layer 22, so that a forward voltage can be reduced.
摘要翻译：要解决的问题：提供一种能够通过减小漂移层和与漂移层相邻的层之间的界面处的应力而能够保持正向电压低的双极半导体元件。解决方案：在pin二极管20中，n型SiC缓冲层22的杂质浓度的上限中的每一个：（5×10 17 cm - 3 ）; （7×10 17 cm - 3 ）; 和对应于n值的膜厚度的每个区域设置（10×10 17 cm > 3 ）” SiC漂移层23（300μm以下且大于200μm）; （200μm以下且大于100μm）; 和（100μm以下且大于50μm）。这可以降低n型SiC漂移层23和n型SiC缓冲层22之间的界面处的应力，从而可以减小正向电压。版权所有（C）2012，JPO＆INPIT

34. 发明专利

JP2009212374A Method of manufacturing semiconductor device, and semiconductor device 审中-公开
标题翻译：制造半导体器件的方法和半导体器件
公开(公告)号：JP2009212374A
公开(公告)日：2009-09-17
申请号：JP2008055156
申请日：2008-03-05
申请人： Kansai Electric Power Co Inc:The , 関西電力株式会社
发明人： NAKAYAMA KOJI , SUGAWARA YOSHITAKA , ASANO KATSUNORI
IPC分类号： H01L29/861 , H01L21/28 , H01L21/322 , H01L21/329
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device for making the electrical characteristics of a plurality of wide-gap semiconductor elements uniform by a simple manufacturing process and passing a large current without causing current concentration on a specific element in such a configuration that a plurality of wide-gap semiconductor elements are connected in parallel.
SOLUTION: A voltage-current characteristic for each pn junction diode is measured (characteristic measuring steps S5 and S9). The amount of electron beams for obtaining a target voltage-current characteristic is calculated on the basis of the measured voltage-current characteristic of the pn junction diode with respect to the pn junction diode for approximating to the target voltage-current characteristic by irradiating with the electron beams (electron-beam amount calculating step S6). The electron beams of the calculated amount of the electron beams are radiated to the pn junction diode for approximating to the target voltage-current characteristic by irradiating with the electron beams (electron beam radiating step S8).
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种制造半导体器件的方法，用于通过简单的制造工艺使多个宽间隙半导体元件的电特性均匀并通过大电流而不会在特定元件上引起电流集中在多个宽间隙半导体元件并联连接的结构中。
解决方案：测量每个pn结二极管的电压电流特性（特性测量步骤S5和S9）。基于pn结二极管相对于pn结二极管的测量的电压 - 电流特性来计算用于获得目标电压 - 电流特性的电子束的量，用于通过照射所述pn结二极管来近似于目标电压 - 电流特性电子束（电子束量计算步骤S6）。计算出的电子束的电子束通过用电子束照射而近似于目标电压 - 电流特性而被照射到pn结二极管（电子束照射步骤S8）。版权所有（C）2009，JPO＆INPIT

35. 发明专利

JP2008072149A Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：JP2008072149A
公开(公告)日：2008-03-27
申请号：JP2007312544
申请日：2007-12-03
申请人： Kansai Electric Power Co Inc:The , 関西電力株式会社
发明人： ASANO KATSUNORI , SUGAWARA YOSHITAKA , NAKAYAMA KOJI
IPC分类号： H01L25/07 , H01L25/18
CPC分类号： H01L2224/48091 , H01L2224/48137 , H01L2224/49 , H01L2224/73265 , H01L2924/12032 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/30107 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： PROBLEM TO BE SOLVED: To eliminate a snubber capacitor externally connected in parallel to freewheeling diode of wide gap semiconductor. SOLUTION: The semiconductor device comprises a dielectric with a prescribed area prepared on a heat sink, a capacitor including two conductor facing via the dielectric, a diode element prepared on the capacitor, and a resistor connected in parallel to the diode. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：消除与宽间隙半导体的续流二极管并联外部的缓冲电容器。解决方案：半导体器件包括在散热器上制备具有规定面积的电介质，包括通过电介质面对的两个导体的电容器，在电容器上制备的二极管元件以及与二极管并联连接的电阻器。版权所有（C）2008，JPO＆INPIT

36. 发明专利

JP2005245181A Gate drive circuit 审中-公开
标题翻译：门控驱动电路
公开(公告)号：JP2005245181A
公开(公告)日：2005-09-08
申请号：JP2004055165
申请日：2004-02-27
申请人： Kansai Electric Power Co Inc:The , 関西電力株式会社
发明人： OGATA SHUJI , ASANO KATSUNORI , SUGAWARA YOSHITAKA
IPC分类号： H02M1/08
CPC分类号： Y02B70/1483
摘要： PROBLEM TO BE SOLVED: To provide a gate drive circuit capable of suppressing an increase in a negative peak voltage (an absolute value) of a gate voltage during turn-off of a gate turn-off thyrister (SiC-GTO) using a wide gap semiconductor generated by an increase in crystal defect, and capable of preventing the generation of self-ignition by the internal capacitance of the SiC-GTO.
SOLUTION: Between an anode and a gate of the SiC-GTO connected to the gate drive circuit, a capacitor for suppressing an increase in gate voltage is connected through the shortest connection wire.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种栅极驱动电路，其能够抑制在关断晶闸管（SiC-GTO）关断期间的栅极电压的负峰值电压（绝对值）的增加，所述栅极驱动电路使用通过晶体缺陷的增加而产生的宽间隙半导体，并且能够防止由SiC-GTO的内部电容产生自点火。解决方案：在连接到栅极驱动电路的SiC-GTO的阳极和栅极之间，通过最短的连接线连接用于抑制栅极电压增加的电容器。版权所有（C）2005，JPO＆NCIPI

37. 发明专利

JP2005217441A Voltage controlled semiconductor device, manufacture thereof, and power conversion device using the same 有权
标题翻译：电压控制半导体器件及其制造方法及使用其的功率转换器件
公开(公告)号：JP2005217441A
公开(公告)日：2005-08-11
申请号：JP2005114018
申请日：2005-04-11
申请人： Kansai Electric Power Co Inc:The , 関西電力株式会社
发明人： SUGAWARA YOSHITAKA , ASANO KATSUNORI
IPC分类号： H01L29/74 , H01L29/80
摘要： PROBLEM TO BE SOLVED: To provide a voltage controlled semiconductor device of high breakdown voltage, low on-resistance, and low noise.
SOLUTION: The semiconductor device is comprised of a surface voltage control gate semiconductor region and an embedded voltage control gate semiconductor region having a current pass near the center, in an upper and lower part of a thin active region. The voltage control gate semiconductor region is comprised of an active region and a semiconductor region with reverse polarity to a source region. The source region is configured at both ends of the thin active region in the embedded voltage control gate semiconductor region, so that the surface and the bottom are located at a lower position respectively then the surface voltage control gate semiconductor region, and the edge parts have the same potential.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供具有高击穿电压，低导通电阻和低噪声的压控半导体器件。解决方案：半导体器件包括表面电压控制栅极半导体区域和在薄的有源区域的上部和下部具有靠近中心的电流通过的嵌入式电压控制栅极半导体区域。电压控制栅极半导体区域由有源区域和与源极区域极性相反的半导体区域构成。源区域配置在嵌入式电压控制栅极半导体区域中的薄有源区域的两端，使得表面和底部分别位于下表面电压控制栅极半导体区域，并且边缘部分具有同样的潜力。版权所有（C）2005，JPO＆NCIPI

38. 发明专利

JP2005217167A Semiconductor device and power unit employing the same 有权
标题翻译：半导体器件和使用其的电源单元
公开(公告)号：JP2005217167A
公开(公告)日：2005-08-11
申请号：JP2004021738
申请日：2004-01-29
申请人： Kansai Electric Power Co Inc:The , 関西電力株式会社
发明人： ASANO KATSUNORI , SUGAWARA YOSHITAKA , NAKAYAMA KOJI
IPC分类号： H01L25/07 , H01L25/18 , H02M7/48
CPC分类号： H01L2224/48091 , H01L2224/48111 , H01L2224/48137 , H01L2224/49 , H01L2224/73265 , H01L2924/12032 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/30107 , Y02B70/1483 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device employing the semiconductor switching element of a wide gap semiconductor that eliminates the need for a snubber capacitor having been externally mounted and connected in parallel with a flywheeling diode of the wide gap semiconductor in anti-parallel connection to the semiconductor switching element. SOLUTION: In a semiconductor package including the semiconductor switching element and the diode connected in anti-parallel, the diode is fitted to a substrate of the semiconductor package via a capacitor comprising two conductor plates opposed to each other for sandwiching a dielectric plate, and the capacitor acts like a snubber capacitor. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了提供采用宽间隙半导体的半导体开关元件的半导体器件，其消除了对外部安装的缓冲电容器的需要，并且与宽间隙半导体的飞轮二极管并联连接在反并联连接到半导体开关元件。解决方案：在包括半反相并联的半导体开关元件和二极管的半导体封装中，二极管经由包括彼此相对的两个导体板的电容器装配到半导体封装的衬底，用于夹住电介质板，并且电容器像缓冲电容器一样起作用。版权所有（C）2005，JPO＆NCIPI

39. 发明专利

JP2005045964A Inverter device 有权
标题翻译：逆变器装置
公开(公告)号：JP2005045964A
公开(公告)日：2005-02-17
申请号：JP2003279312
申请日：2003-07-24
申请人： Kansai Electric Power Co Inc:The , Nissin Electric Co Ltd , 日新電機株式会社 , 関西電力株式会社
发明人： SUGAWARA YOSHITAKA , ASANO KATSUNORI , MATSUKAWA MITSURU , MINOWA YOSHIBUMI , SHIKATA TOSHIHIKO
IPC分类号： H02M7/48
CPC分类号： H02M7/521 , H02M1/32 , H02M1/38 , H02M2001/0012
摘要： PROBLEM TO BE SOLVED: To stabilize gate drawing-out current by performing turning on of a GTO element certainly by eliminating a potential change during a turning off period of the GTO element. SOLUTION: An inverter device includes a three phase inverter 14 in which paired GTO elements UP, UN, VP, VN, WP and WN are formed in a bridge and the voltage of a DC power 13 is AC converted by the GTO elements UP, UN, VP, VN, WP and WN. In this inverter device 11, when ON command signals of the GTO elements VN, WN of another phase opposed to the GTO element UP are generated during a predetermined period after an arbitrary GTO element, such as, for example, the GTO element UP is turned off, a simultaneous switching preventing function for delaying the on-operations of the GTO elements VN, WN of other phase for the predetermined period is added to an inverter controller. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：通过在GTO元件的关闭时段期间消除电位变化，通过执行GTO元件的导通来稳定栅极引出电流。解决方案：逆变器装置包括三相逆变器14，其中成对的GTO元件UP，UN，VP，VN，WP和WN形成在桥中，并且DC功率13的电压被GTO元件AC转换 UP，UN，VP，VN，WP和WN。在该逆变器装置11中，当在任意的GTO元件（例如GTO元件UP）被转动之后的预定时段期间，在与GTO元件UP相对的另一相位的GTO元件VN，WN的ON命令信号被产生时关闭，将用于将预定时间段的其他相位的GTO元件VN，WN的接通操作延迟的同时切换防止功能被添加到逆变器控制器。版权所有（C）2005，JPO＆NCIPI

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