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1. 发明专利

JP2012156152A Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：JP2012156152A
公开(公告)日：2012-08-16
申请号：JP2011011080
申请日：2011-01-21
申请人： Kansai Electric Power Co Inc:The , 関西電力株式会社
发明人： NAKAYAMA KOJI , IZUMI TORU , ASANO KATSUNORI , MITSUYANAGI YOICHI
IPC分类号： H01L23/29 , C08G77/12 , C08G77/20 , C09D5/25 , C09D183/04 , H01L21/312 , H01L23/31
CPC分类号： H01L24/05 , H01L2224/02166 , H01L2224/04042 , H01L2224/4847 , H01L2924/12036 , H01L2924/12041 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device in which voltage resistance can be prevented from being lowered by avoiding generation of an ununiform charge distribution between a surface protective film composed of SiOand a coating part composed of a thermosetting resin containing polysiloxane as a main component.SOLUTION: In a semiconductor device, charge accumulated on the interface of an SiOsurface protective film 16 and a coating part 23 composed of a silicon resin can be reduced by coating the surface of an SiC pn junction diode 10, and setting the thickness of the surface protective film 16 composed of SiOto 2 μm thereby decreasing the capacitance of the SiOsurface protective film 16. An electric field on the interface of the surface protective film (SiOfilm) 16 and the coating part 23 can be reduced by separating the interface of the SiOsurface protective film 16 and the coating part 23 from the interface of the surface protective film (SiOfilm) 16 and a wide gap semiconductor (SiC, or the like) on which a high electric field is applied. Consequently, dielectric breakdown on the interface of the surface protective film 16 and the coating pat 23 can be prevented.
摘要翻译：要解决的问题：提供一种半导体器件，其中可以通过避免在由SiO 2“构成的表面保护膜之间产生不均匀的电荷分布来防止电压降低， SB＆gt;以及由含有聚硅氧烷作为主要成分的热固性树脂构成的涂布部。解决方案：在半导体器件中，可以通过涂覆来减少积聚在SiO 2 表面保护膜16和由硅树脂构成的涂层部分23的界面上的电荷 SiC pn结二极管10的表面，并将由SiO 2 组成的表面保护膜16的厚度设定为2μm，从而减小SiO 2 表面保护膜16.表面保护膜（SiO 2 膜）16和涂层23的界面上的电场可以是通过从表面保护膜（SiO 2“）的界面分离SiO 2 表面保护膜16和涂层部分23的界面， / SB>膜）16和施加高电场的宽间隙半导体（SiC等）。因此，可以防止表面保护膜16和涂层片23的界面上的电介质击穿。版权所有（C）2012，JPO＆INPIT

2. 发明专利

JP2014175604A Semiconductor device and attachment structure of semiconductor element 审中-公开
标题翻译：半导体器件的半导体器件和附件结构
公开(公告)号：JP2014175604A
公开(公告)日：2014-09-22
申请号：JP2013049345
申请日：2013-03-12
申请人： Kansai Electric Power Co Inc:The , 関西電力株式会社
发明人： HAYASHI TOSHIHIKO , IZUMI TORU , ASANO KATSUNORI
IPC分类号： H01L21/52 , H01L23/36 , H01L23/48
CPC分类号： H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/181 , H01L2924/19107 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device in which thermal stress, occurring between a semiconductor element and a support, is relaxed without lowering the thermal conductivity at the connection of the semiconductor element and support, and thereby destruction due to thermal stress can be avoided while ensuring superior heat dissipation.SOLUTION: In a semiconductor device, a groove 21 of a cathode electrode 9 made of Au and a protrusion 22 of a solder layer 4 made of an Au/Sn eutectic alloy are fitted, and the cathode electrode 9 is bonded to an SiC semiconductor laminate 20 on the first bonding surface 9B on the reverse side of the second bonding surface 9A to the solder layer 4, and has ductility higher than that of the solder layer 4. Consequently, when the solder layer 4 is expanded or contracted by heating or cooling, the cathode electrode 9 deforms plastically by receiving a force from the protrusion 22 of the solder layer 4 at the groove 21. By the plastic deformation of the cathode electrode 9, thermal stress occurring between an SiC GTO thyristor element 1 and a support 3 can be relaxed.
摘要翻译：要解决的问题：提供半导体元件和支撑体之间发生热应力的半导体器件，而不会降低半导体元件和支撑件的连接处的导热性，从而可以由于热应力而导致的破坏避免同时确保优异的散热。解决方案：在半导体器件中，安装由Au制成的阴极9的凹槽21和由Au / Sn共晶合金制成的焊料层4的突起22，并且阴极电极9 在第二接合面9A的相反侧的第一接合面9B上与焊料层4接合到SiC半导体层叠体20，并且具有比焊料层4更高的延展性。因此，当焊料层4为通过加热或冷却而膨胀或收缩，阴极电极9通过在槽21处接收来自焊料层4的突起22的力而塑性变形。通过塑性变形阴极电极9的离子，可以放松在SiC GTO晶闸管元件1和支撑体3之间产生的热应力。

3. 发明专利

JP2015005570A 半導体装置审中-公开
标题翻译：半导体器件
公开(公告)号：JP2015005570A
公开(公告)日：2015-01-08
申请号：JP2013128774
申请日：2013-06-19
申请人：関西電力株式会社 , Kansai Electric Power Co Inc:The
发明人： HAYASHI TOSHIHIKO , ITSUMI TETSURO , IZUMI TORU , ASANO KATSUNORI
IPC分类号： H01L23/36 , H01L23/12 , H01L23/13
摘要：【課題】高電圧で使用した場合にも絶縁性を確保できると共に熱抵抗を低減できる半導体装置を提供する。【解決手段】この半導体装置によれば、第1,第2の2層の絶縁層5,7の間に第1の熱拡散層6を挟んだ構造によって、2層の絶縁層5,7でもって高電圧での使用時の電気的な絶縁性を確保できると共に第1の熱拡散層6によって各層5〜6の表面に沿った方向への熱拡散を促進でき、熱抵抗を低減できる。【選択図】図1
摘要翻译：要解决的问题：提供一种能够在高电压下使用时能够确保绝缘性并能够降低耐热性的半导体器件。解决方案：在具有第一热扩散层6夹持的结构的半导体器件中在绝缘层5,7或第一和第二层之间，两层或绝缘层5,7确保在高电压下使用时的电绝缘性，此外，第一热扩散层6促进沿该方向的热扩散沿着层5-6的表面，以降低耐热性。

4. 发明专利

JP2011222869A Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：JP2011222869A
公开(公告)日：2011-11-04
申请号：JP2010092412
申请日：2010-04-13
申请人： Kansai Electric Power Co Inc:The , 関西電力株式会社
发明人： IZUMI TORU , ASANO KATSUNORI
IPC分类号： H01L23/29 , C08L83/05 , C08L83/07 , H01L23/31
CPC分类号： H01L2224/48091 , H01L2224/73265 , H01L2224/8592 , H01L2924/1301 , H01L2924/181 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device capable of attaining high heat resistance and high voltage resistance and improving adhesion between a coating part of a semiconductor element and a support body of the semiconductor element to allow a use at a high-temperature.SOLUTION: An annular end part 23 of a second coating part 16 that coats a surface 15A of a first coating part 15 which coats a surface of an SiC GTO thyristor element 1 placed on an upper surface 3A of a copper support body 3, engages with an annular engagement groove 21 of the support body 3. Since the annular end part 23 of the second coating part 16 which is engaged with the engagement groove 21 of the support body 3 plays a role as an anchor to the support body 3, the second coating part 16, having much difference in linear expansion coefficient from the support body 3, can be suppressed from peeling from the support body 3 at a high temperature (for example, 200°C or higher).
摘要翻译：解决的问题：为了提供能够获得高耐热性和高耐电压性以及改善半导体元件的涂覆部分和半导体元件的支撑体之间的粘附性的半导体器件，以允许在高温下使用，温度。
解决方案：涂覆第一涂层部分15的表面15A的第二涂覆部分16的环形端部23，其涂覆放置在铜支撑体3的上表面3A上的SiC GTO晶闸管元件1的表面与支撑体3的环状接合槽21卡合。由于与支撑体3的卡合槽21卡合的第二涂布部16的环状端部23作为支撑体3的锚定部发挥作用可以抑制与支撑体3的线膨胀系数有很大差异的第二涂布部16在高温（例如200℃以上）下从支撑体3剥离。版权所有（C）2012，JPO＆INPIT

5. 发明专利

JP2010027760A Electric device 审中-公开
标题翻译：电气设备
公开(公告)号：JP2010027760A
公开(公告)日：2010-02-04
申请号：JP2008185682
申请日：2008-07-17
申请人： Kansai Electric Power Co Inc:The , 関西電力株式会社
发明人： SUGAWARA YOSHITAKA , IZUMI TORU
IPC分类号： H05K7/20 , H01L23/467 , H02M7/04
CPC分类号： Y02B70/1483
摘要： PROBLEM TO BE SOLVED: To provide an electric device efficiently cooling a heat generation module and achieving size and weight reduction.
SOLUTION: A module 2 including an SiC switching element 11 is attached to a lower part on one surface of a heat spreader 1. A cooling fin 3 is attached to an upper part on one surface of the heat spreader 1. Heat from the module 2 is conducted to the cooling fin 3 via the heat spreader 1 and is radiated to the outside from the cooling fin 3. A heat pipe 4 filled with a liquid to leave a space within the pipe is built into the heat spreader 1. The heat pipe 4 extends vertically from below the heat spreader 1 and to above the heat spreader 1. A liquid is circulated through within the heat pipe 4 while repeating vaporization and liquefaction to efficiently conduct the heat from the module 2 to the cooling fin 3.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种有效地冷却发热模块的电气设备，并实现尺寸和重量的减轻。解决方案：包括SiC开关元件11的模块2附接到散热器1的一个表面上的下部。散热片3附接到散热器1的一个表面上的上部。来自模块2通过散热器1被传导到散热片3，并从散热片3辐射到外部。在散热器1中内置有填充有液体以在管内留下空间的热管4。热管4从散热器1的下方垂直地延伸到散热器1的上方。液体在热管4内循环，同时重复蒸发和液化，以有效地将热量从模块2传导到冷却片3。版权所有（C）2010，JPO＆INPIT

6. 发明专利

JP2014229817A 半導体装置审中-公开
标题翻译：半导体器件
公开(公告)号：JP2014229817A
公开(公告)日：2014-12-08
申请号：JP2013109798
申请日：2013-05-24
申请人：関西電力株式会社 , Kansai Electric Power Co Inc:The , 株式会社Adeka , Adeka Corp , 株式会社Adeka
发明人： IZUMI TORU , ASANO KATSUNORI , HAYASHI TOSHIHIKO , HIWATARI KENICHIRO , SAIKI TOMOAKI
IPC分类号： H01L23/29 , H01L23/31
CPC分类号： H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2224/8592 , H01L2924/00014 , H01L2924/00
摘要：【課題】高温環境下での信頼性を向上できる半導体装置を提供する。【解決手段】このSiC GTOサイリスタ装置によれば、樹脂製被覆本体21と支持体3との間に耐熱性および耐酸化性を有する樹脂製接合部18を形成して、樹脂製被覆本体21と支持体3とが直接に接合された界面の外周部樹脂製被覆本体21と支持体3とが直接に接合された界面の外周部が露出しないように、上記界面の外周部を耐熱性および耐酸化性を有する樹脂製接合部18により覆うことによって、高温環境下での酸化による接着力の低下が抑制され、樹脂製被覆本体21が支持体3から剥離するのを防止できる。【選択図】図1
摘要翻译：要解决的问题：提供可以在高温环境下提高可靠性的半导体器件。解决方案：根据本发明的SiC GTO晶闸管器件，通过在树脂涂层体21之间形成具有耐热性和抗氧化性的树脂结合部18 以及支撑介质3，其覆盖树脂涂层体21和支撑介质3与具有耐热性和抗氧化性的树脂粘合部分18直接接合的边界表面的周边，以便不暴露边界表面的周边在高温环境下由于氧化引起的粘合力劣化被抑制，并且可以防止树脂涂层体21与支撑介质3分离。

7. 发明专利

JP2012156153A Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：JP2012156153A
公开(公告)日：2012-08-16
申请号：JP2011011084
申请日：2011-01-21
申请人： Kansai Electric Power Co Inc:The , 関西電力株式会社
发明人： NAKAYAMA KOJI , IZUMI TORU , ASANO KATSUNORI , MITSUYANAGI YOICHI
IPC分类号： H01L23/29 , H01L23/31 , H01L29/861 , H01L29/868
CPC分类号： H01L24/05 , H01L2224/02166 , H01L2224/04042 , H01L2224/4847 , H01L2924/12036 , H01L2924/12041 , H01L2924/1305 , H01L2924/13055 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device in which voltage resistance can be prevented from being lowered by avoiding generation of ununiform charge distribution between a surface protective film composed of SiOand a coating part composed of a thermosetting resin containing polysiloxane as a main component.SOLUTION: A semiconductor device comprises a surface protective film 16 composed of SiOand coating the surface of an SiC pn junction diode 10, a polyimide resin film 22 coating the surface protective film 16 (1 μm thick), and a coating part 23 composed of a silicon resin and coating the polyimide resin film 22. The polyimide resin film 22 exhibits high affinity to the SiOsurface protective film 16 and the coating part 23 composed of silicon resin. Since the polyimide resin film 22 forms a stable joint surface on the interface of the surface protective film 16 and the coating part 23, charge does not accumulate easily on the interface and the charge accumulated on the interface can be reduced.
摘要翻译：要解决的问题：提供一种半导体器件，其中可以通过避免在由SiO 2 构成的表面保护膜之间产生不均匀的电荷分布来防止电压降低 >和由含有聚硅氧烷作为主要成分的热固性树脂组成的涂层部分。解决方案：半导体器件包括由SiO 2 组成的表面保护膜16，并涂覆SiC pn结二极管10的表面，涂覆表面的聚酰亚胺树脂膜22 保护膜16（1μm厚）以及由硅树脂构成并涂布聚酰亚胺树脂膜22的涂布部23.聚酰亚胺树脂膜22对SiO 2 SB 表面保护膜16和由硅树脂构成的涂布部23。由于聚酰亚胺树脂膜22在表面保护膜16和涂布部23的界面上形成稳定的接合表面，所以在界面上不会容易积聚电荷，并且可以减少积聚在界面上的电荷。版权所有（C）2012，JPO＆INPIT

8. 发明专利

JP2011063688A Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：JP2011063688A
公开(公告)日：2011-03-31
申请号：JP2009214556
申请日：2009-09-16
申请人： Adeka Corp , Kansai Electric Power Co Inc:The , 株式会社Adeka , 関西電力株式会社
发明人： IZUMI TORU , ASANO KATSUNORI , SUGAWARA YOSHITAKA
IPC分类号： C08L83/07 , C08L83/05 , H01L23/29 , H01L23/31
CPC分类号： H01L2224/48091 , H01L2224/73265 , H01L2224/8592 , H01L2924/1301 , H01L2924/181 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device in which high heat resistance and high voltage endurance can be attained and adhesiveness between a covering section of a semiconductor device and a support of a semiconductor device can be improved, thus allowing the use thereof in high temperatures. SOLUTION: The semiconductor device includes a first covering section 15 and a second covering section. The first covering section 15, which covers SiC pn diode elements 1 and 2, is formed from a first silicon-containing curable composition which contains a silicon-containing polymer having a cyclic siloxane structure and a linear siloxane structure and a molecular weight of 3,000-1,000,000 and a platinum-based catalyst which is a curing reaction catalyst. The second covering section 16 is produced from a silicon-containing curable composition which covers the whole surface 15A of the first covering section 15 and is not in contact with a support 3. The second covering section 16 is formed from a second silicon-containing curable composition in which alumina particles having a particle size of 20 μm are blended with the first silicon-containing curable composition as insulating ceramics and have a volume filling factor of 50%. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：解决的问题：为了提供可以获得高耐热性和高耐久性的半导体器件，并且可以提高半导体器件的覆盖部分和半导体器件的支撑体之间的粘附性，从而允许使用在高温下。解决方案：半导体器件包括第一覆盖部分15和第二覆盖部分。覆盖SiC pn二极管元件1和2的第一覆盖部分15由第一含硅可固化组合物形成，该第一含硅可固化组合物含有具有环状硅氧烷结构和直链硅氧烷结构且分子量为3,000- 作为固化反应催化剂的铂系催化剂。第二覆盖部分16由覆盖第一覆盖部分15的整个表面15A并且不与载体3接触的含硅可固化组合物制成。第二覆盖部分16由第二含硅可固化其中将粒径为20μm的氧化铝颗粒与第一含硅可固化组合物作为绝缘陶瓷共混并且体积填充系数为50％的组合物。版权所有（C）2011，JPO＆INPIT

9. 发明专利

JP2011061139A Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：JP2011061139A
公开(公告)日：2011-03-24
申请号：JP2009211793
申请日：2009-09-14
申请人： Kansai Electric Power Co Inc:The , 関西電力株式会社
发明人： HAYASHI TOSHIHIKO , IZUMI TORU , SUGAWARA YOSHITAKA
IPC分类号： H01L23/36 , H01L23/08
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device capable of preventing the occurrence of a crack on an insulating substrate of a package with a simple structure. SOLUTION: The semiconductor device includes a package having a ceramic substrate 32 with a semiconductor element mounted thereon, and a metal base plate 31 with the ceramic substrate 32 joined to a main plane 31a. On a side face side of the ceramic substrate 32, an inclined plane 32c is formed which has a distance to the main plane 31a of the metal base plate 31 gradually increased toward the outside from an edge in contact with the metal base plate 31, and an angle formed by the inclined plane 32c and the main plane 31a of the metal base plate 31 is acute. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：解决的问题：提供能够以简单的结构防止在封装的绝缘基板上发生裂纹的半导体器件。解决方案：半导体器件包括具有安装在其上的半导体元件的陶瓷基板32的封装以及与主平面31a连接的陶瓷基板32的金属基板31。在陶瓷基板32的侧面形成有与金属基板31接触的边缘向金属基板31的主面31a延伸的距离逐渐增大的斜面32c，由倾斜平面32c和金属基板31的主平面31a形成的角度是锐角的。版权所有（C）2011，JPO＆INPIT

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