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21. 发明专利

JPH11236296A BISMUTH-SUBSTITUTED GARNET THICK FILM MATERIAL AND ITS PRODUCTION 失效
公开(公告)号：JPH11236296A
公开(公告)日：1999-08-31
申请号：JP5583098
申请日：1998-02-20
申请人： TOKIN CORP
发明人： SATO TADAKUNI
IPC分类号： G02F1/09 , C30B29/28 , H01F1/34 , H01F10/24
摘要： PROBLEM TO BE SOLVED: To provide the subject garnet thick film material that is used as a substitute material for a Tb-Bi based garnet thick film material having essential absorption in an about >=1.6 μm wavelength band region and has improved insertion loss (improved transmissivity) and an improved θf/ T (temp. coefficient of Faraday rotation angle (θf ) value in a >=1.5 μm wavelength band region in which an unfavorable influence on the absorption spectrum due to Th ions is caused, and also to provide the production of this material. SOLUTION: This film material is a bismuth-substituted garnet thick film material which is produced by an LPE(liquid phase epitaxy) method with NGG (neodymium gallium garnet, Nd3 Ga5 O12 ) as the substrate and has a composition represented by the chemical formula Gd3-x-y-2 Yx Yby Biz Fe5-a Ala O12 (wherein: each of (x) and (y) is a numerical value of 0 to 0.2 and when any one of (x) and (y) is 0, the other is not 0; (z) is a numerical value of 0.8 to 1.4; and (a) is a numerical value of 0.2 to 0.7) and also contains 0 to 3.7 wt.% B2 O3 . The material is subjected to heat treatment while maintaining the material at 950 to 1,130 deg.C in an atmosphere having a >=5% oxygen concn.

22. 发明专利

JPH11176637A POLARIZER AND MAGNETO-OPTIC ELEMENT 失效
公开(公告)号：JPH11176637A
公开(公告)日：1999-07-02
申请号：JP34661997
申请日：1997-12-16
申请人： RICOH KK
发明人： KATSURAGAWA TADAO
IPC分类号： G02B5/30 , G02F1/09 , H01F10/18 , H01F10/193 , H01F10/24
摘要： PROBLEM TO BE SOLVED: To provide a polarizer which is high in light transmissivity and excellent in transparency, and also to provide a magneto-optic element which can display an image with a high contrast by using such a polarizer having an excellent transparency. SOLUTION: A magneto-optic element 1 includes a transparent substrate, a pair of polarizers 2, 3 of semiconductor material having a linear cyclic structure with a pitch and depth of the order of 0.1-0.57 μm, and a transparent magnetic layer 4 in a sandwich structure. Since the polarizers 2 and 3 can be markedly improved in their light transmissivity, an image magnetically recorded on the magnetic layer 4 can be displayed with a high contrast through a high- transparency polarizers 2 and 3.

23. 发明专利

JPH1197241A MANUFACTURE OF OXIDE GARNET FILM 失效
公开(公告)号：JPH1197241A
公开(公告)日：1999-04-09
申请号：JP25302697
申请日：1997-09-18
申请人： SHINETSU CHEMICAL CO
发明人： NAKAYAMA MITSUGI , FUKUDA SATORU , TANNO MASAYUKI , YOSHIKAWA HIROKI , RIYUUOU TOSHIHIKO , IKARI MASANORI
IPC分类号： C30B29/28 , H01F10/24 , H01F41/28
摘要： PROBLEM TO BE SOLVED: To improve the number of magneto-optical element chips which can be fabricated by orienting an oxide garnet substrate in such a predetermined direction as to easily cause breakages of crystal. SOLUTION: Oxide garnet films are grown on both surfaces of an oxide garnet substrate in a melt by a liquid-phase epitaxial method. The oxide garnet substrate at that instance is oriented within ±5 deg. of such a direction 110} 112} or 123} as to easily cause breakages of crystal. After the garnet film crystal has been formed, the substrate is spontaneously split using thermal stresses during the process of cooling the resultant substrate to room temperature. Thus, two substrates, each having the oxide garnet epitaxial film grown only on one surface thereof, are obtained at the same time. As a result, the number of magneto-optical chips that can be prepared at one time can be improved significantly.

24. 发明专利

JPH10302337A MULTILAYER PHOTOMAGNETIC MEMORY AND METHOD FOR PHOTOMAGNETIC WRITING-IN 失效
公开(公告)号：JPH10302337A
公开(公告)日：1998-11-13
申请号：JP10939097
申请日：1997-04-25
申请人： JAPAN BROADCASTING CORP
发明人： ISHII NORIHIKO , TAMAKI TAKAHIKO
IPC分类号： G11B11/10 , G11B11/105 , H01F10/24
摘要： PROBLEM TO BE SOLVED: To enable writing-in informations onto the desired recording layer with the application of magnetic field and irradiation of laser beam by constituting each of the recording layers with the materials of which the curves of coercive force per temperature change intersect at one point in the range of room temperature and Curie temperature. SOLUTION: A multilayer photomagnetic memory 10 is equipped on the substrate 1 with the first recording layer 2, an intermediate layer 3 consisting of a material capable of disregarding the dimension of Faraday rotational angle, and the second recording layer 4 different from the first recording layer 2 in the coercive force per temperature change and also consisting of a material of which curves of coercive force per temperature change of each of the recording layers intersect at least at one point in the range of room temperature and Curie temperature. Such multilayered films are irradiated with a laser beam in a state of biased magnetic field being applied, and the temperature of the first recording layer 2 and the temperature of the second recording layer 4 are raised; then at the temperature exceeding a prescribed point only the first recording layer 2 has magnetization inverted and thus writing-in information onto the first recording layer 2 becomes available. In the case temperature rise is kept off effecting the coercive force of the second recording layer 4, no writing-in information is executed.

25. 发明专利

JP2800973B2 失效
公开(公告)号：JP2800973B2
公开(公告)日：1998-09-21
申请号：JP24683288
申请日：1988-09-30
IPC分类号： C30B33/10 , C30B33/00 , H01F1/34 , H01F10/24 , H01F41/28

26. 发明专利

JP2779057B2 失效
公开(公告)号：JP2779057B2
公开(公告)日：1998-07-23
申请号：JP28779490
申请日：1990-10-25
申请人： SHINETSU KAGAKU KOGYO KK
发明人： TANNO MASAYUKI , RYUO TOSHIHIKO
IPC分类号： H01F10/24 , H01P1/215 , H01P7/00 , H01P9/00 , H03H2/00

27. 发明专利

JPH10167895A PRODUCTION OF MAGNETOOPTICAL ELEMENT MATERIAL 失效
公开(公告)号：JPH10167895A
公开(公告)日：1998-06-23
申请号：JP34058896
申请日：1996-12-05
申请人： FUJI ELECTROCHEMICAL CO LTD
发明人： SUZUKI TOSHIYASU
IPC分类号： G02F1/09 , C30B19/04 , C30B19/12 , C30B29/28 , H01F1/34 , H01F10/24 , H01F41/28
摘要： PROBLEM TO BE SOLVED: To reduce the generation of pits in an LEP(liquid phase-epitaxial) film used as a magnetooptical element material even at the time of growing the LEP film having an increased thickness and also, to inhibit the loss in mass of a platinum crucible from being caused in the growth process of the LEP film, in the production. SOLUTION: In this production, a melt in a platinum crucible in which a magnetic garnet single crystal raw material is melted, is maintained at a growth temp. such that the melt is in a supersaturated state and in that state, a nonmagnetic garnet substrate used as a seed is immersed in the surface of the melt to grow a single crystal film on the surface of the substrate by a liquid phase-epitaxial(LEP) growth method and to produce a magnetooptical element material. At this time, a high temp. maintenance stage for maintaining the melt at a higher temp. (e.g. >=950 deg.C) than the growth temp. and a growth stage for growing the single crystal film at the growth temp. are altemately and plural times repeatedly performed, wherein: the first high temp. maintenance stage is a stage for melting and agitating the raw material and maintaining the resulting melt in the above high temp. state; and each of the second and the following high temp. maintenance stages consists of three steps, i.e., a step for gradually cooling the substrate on which the single crystal film is formed, by utilizing a temp. gradient within a furnace and thereafter taking out the substrate from the furnace to its outside, a step for replenishing the melt in the platinum crucible with the crystal component (i.e. the raw material) in an amount equivalent to the amount of that consumed by the growth of the single crystal film and a step for maintaining the melt in the above high temp. state and agitating the melt.

28. 发明专利

JP2763040B2 失效
公开(公告)号：JP2763040B2
公开(公告)日：1998-06-11
申请号：JP31176687
申请日：1987-12-09
申请人： SHINETSU KAGAKU KOGYO KK
发明人： RYUO TOSHIHIKO
IPC分类号： H01F10/24 , C30B29/28

29. 发明专利

JPH10144557A MANUFACTURE OF MAGNETIC GARNET FILM FOR MAGNETOSTATIC WAVE ELEMENT, AND MAGNETIC GARNET FILM FOR MAGNETOSTATIC WAVE ELEMENT 失效
公开(公告)号：JPH10144557A
公开(公告)日：1998-05-29
申请号：JP29861496
申请日：1996-11-11
申请人： MURATA MANUFACTURING CO
发明人： SEKIJIMA YUUTOKU , FUJII TAKASHI , UMEGAKI TOSHIHITO
IPC分类号： C30B19/00 , C30B29/28 , H01F10/24 , H01F41/28
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a magnetic garnet film for a magnetostatic wave element which the surface is plane and the film of an end portion is thinned, at a low cost and the method is excellent in massproductivity, and the magnetic garnet film for a magnetostatic wave element. SOLUTION: A recessed part 2 is formed on a base substrate 1 so as to conform to the shape of a magnetic garnet film which is to be used for a magnetostatic wave element. The area of aperture of the recessed part is larger than the bottom part, and the recessed part constitutes an obtuse angle to the bottom surface. The base substrate 1 is dipped in material solution, and a magnetic garnet film is formed on the base substrate 1 by a liquid epitaxial growth method. The surface of the obtained magnetic garnet film is flat, and the film of the end portion is thin as compared with the central part.

30. 发明专利

JP2756273B2 失效
公开(公告)号：JP2756273B2
公开(公告)日：1998-05-25
申请号：JP24683388
申请日：1988-09-30
申请人： SHINETSU KAGAKU KOGYO KK
发明人： RYUO TOSHIHIKO , MORI TATSUO
IPC分类号： C30B19/10 , H01F10/24 , H01F41/28

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