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1. 发明专利

JP2000089187A PRODUCTION OF MAGNETO-OPTICAL ELEMENT MATERIAL 失效
公开(公告)号：JP2000089187A
公开(公告)日：2000-03-31
申请号：JP25633098
申请日：1998-09-10
申请人： FUJI ELECTROCHEMICAL CO LTD
发明人： SUZUKI TOSHIYASU , KAWAI HIROTAKA , UMEZAWA HIROMITSU , SUZUKI KAZUNARI
IPC分类号： C30B19/00 , C30B29/28 , G02F1/09
摘要： PROBLEM TO BE SOLVED: To make it possible to take advantage of the characteristics of Co-, Bi-substd. rare earth iron garnet having the excellent wavelength characteristic and temp. characteristic of Faraday rotation and to further lower the light absorption coefft. thereof. SOLUTION: This method consists in substituting part of the component atoms of the Co-, Bi-substd. rare earth iron garnet for bivalent positive elements exclusive of Co and subjecting the single crystal to a reduction treatment in an atmosphere of a low hydrogen concn. The bivalent positive elements to be substituted are Co or Mg, etc. The growth of the crystal is preferably a LPE method and the CaO/Fe2O3 (molar ratio) in the raw material is specified to >=0.025. The atmosphere of the low hydrogen concn. is a gaseous nitrogen atmosphere (total pressure 1 atm.) of 1.5 to 4.5 vol.%. The reduction treatment is preferably executed at a holding temp of 400 to 500 deg.C and a holding time of

2. 发明专利

JPH10273397A FARADAY ELEMENT 失效
公开(公告)号：JPH10273397A
公开(公告)日：1998-10-13
申请号：JP9313997
申请日：1997-03-27
申请人： FUJI ELECTROCHEMICAL CO LTD
发明人： SUZUKI TOSHIYASU
IPC分类号： C30B29/28 , G02F1/09 , H01F10/24 , H01F41/28
摘要： PROBLEM TO BE SOLVED: To obtain a faraday element having high isolation characteristics by combining a Bi-substituted rare earth iron garnet single crystal film not containing Co which is formed into a film by a liquid phase epitacial method with a rare earth iron garnet single crystal film containing Co which is formed into a film by a liquid phase epitaxial method under specific composition conditions. SOLUTION: This faraday element is obtained by combining the following films A and B which are formed into films by liquid phase epitaxial method. [A]: a film of magnetic garnet single crystal of formula I [R is a rare earth element containing Y; Ma is a trivalent positive element not containing Co; 0.6 =35 dB.

3. 发明专利

JPH0848600A MAGNETO-OPTICAL ELEMENT MATERIAL 失效
公开(公告)号：JPH0848600A
公开(公告)日：1996-02-20
申请号：JP20281494
申请日：1994-08-04
申请人： FUJI ELECTROCHEMICAL CO LTD
发明人： SUZUKI TOSHIYASU , KAWAI HIROTAKA , UMEZAWA HIROMITSU
IPC分类号： G02F1/09 , C30B19/00 , C30B29/28
摘要： PURPOSE:To provide the material with which a magneto-optical element that has a wide wavelength bandwidth in a wavelength band at 1,310nm and, thereby, is adaptable for use in the wavelength multiplexing communication in the band at 1,310nm can be obtained. CONSTITUTION:This material is a magnetic garnet which is formed on a nonmagnetic garnet substrate by using a liquid phase epitaxial growth method and has the following compositional formula: R3-y-xSmyBixFe5O12 wherein R is any one of the rare earth elements including yttrium; 0.3

4. 发明专利

JPH11292691A SUBSTRATE HOLDING JIG FOR LPE PROCESS 失效
公开(公告)号：JPH11292691A
公开(公告)日：1999-10-26
申请号：JP12288798
申请日：1998-04-16
申请人： FUJI ELECTROCHEMICAL CO LTD
发明人： SUZUKI TOSHIYASU
IPC分类号： C30B19/06 , C30B29/28 , H01L21/68 , H01L21/683
摘要： PROBLEM TO BE SOLVED: To provide the subject jig intended for shortening film growth time necessary for affording a specified film thickness so as to improve the mass productivity of single crystal film. SOLUTION: This jig is intended for holding a substrate 24 when a single crystal film is to be grown on the substrate by LPE process, and has such a scheme that a stirring blade section 32 is set up on the lower part of a substrate holder 30 so as to develop a forced convection current in a stock melt in association with the rotation of the substrate holder 30 for horizontally holding the substrate; the substrate holder 30 has so designed that three or more supports 34 are cylindrically arranged with the upper ends joinedly made narrower and there are provided holding pieces 38 projected inside at midway points of the respective supports and intended for placing the substrate thereon; and the stirring blade section is so designed that two or more blades 46 are symmetrically projected on the outer circumferential surface of a cylindrical body 44 which is fixed on the bottom of the substrate holder, and an upward convection current is forcedly developed in the stock melt as the substrate holder is rotated.

5. 发明专利

JP2000247777A PRODUCTION OF RUTILE SINGLE CRYSTAL 失效
公开(公告)号：JP2000247777A
公开(公告)日：2000-09-12
申请号：JP5378299
申请日：1999-03-02
申请人： FUJI ELECTROCHEMICAL CO LTD
发明人： SUZUKI TOSHIYASU , INAGAKI TOSHIMITSU , UMEZAWA HIROMITSU
IPC分类号： C30B15/08 , C30B29/16
摘要： PROBLEM TO BE SOLVED: To obtain a high-quality rutile single crystal having a large diameter free from foams and low-angle grain boundary. SOLUTION: This method comprises passing through a first process in which a granular TiO2 raw material is continuously fed to a crucible, melted by high- frequency heating and a melt flowing from a central hole at the bottom of the crucible is solidified and a second process in which the raw material crystal 26 is hung in a crucible 18, melted by high-frequency heating and the melt flowing from a central hole at the bottom of the crucible is solidified to grow a single crystal 32. Otherwise, a method for growing a single crystal comprises feeding a high-density raw material rod to an upper crucible, sufficiently melting the rod by high-frequency heating, continuously feeding the raw material rod so as to introduce a melt flowing from a hole at the bottom of the upper crucible along a guide bar hung in the vicinity of the hole into a lower crucible and solidifying a melt flowing from a central hole at the bottom of the lower crucible.

6. 发明专利

JPH10186296A MAGNETO-OPTICAL ELEMENT MATERIAL 失效
公开(公告)号：JPH10186296A
公开(公告)日：1998-07-14
申请号：JP21250697
申请日：1997-07-23
申请人： FUJI ELECTROCHEMICAL CO LTD
发明人： SUZUKI TOSHIYASU , KAWAI HIROTAKA , UMEZAWA HIROMITSU
IPC分类号： G02F1/09 , C30B29/28
摘要： PROBLEM TO BE SOLVED: To make it possible to obtain a magneto-optical element material having the small dependence of a Faraday rotating angle on temps. at a wavelength 1550nm band and having a large Faraday rotation coefft. and to embody a wide-band optical isolator having small dependence of the Faraday rotating angle on wavelengths. SOLUTION: This material consists of the magnetic garnet single crystal of the compsn. formula expressed by R3-x Bix Fe5-v-w-y Mav Mbw COy O12 (where, R is a rare earth element including yttrium, Ma is a trivalent element, Mb is a quadrivalent element, 0.6 =0, 0

7. 发明专利

JPH10167895A PRODUCTION OF MAGNETOOPTICAL ELEMENT MATERIAL 失效
公开(公告)号：JPH10167895A
公开(公告)日：1998-06-23
申请号：JP34058896
申请日：1996-12-05
申请人： FUJI ELECTROCHEMICAL CO LTD
发明人： SUZUKI TOSHIYASU
IPC分类号： G02F1/09 , C30B19/04 , C30B19/12 , C30B29/28 , H01F1/34 , H01F10/24 , H01F41/28
摘要： PROBLEM TO BE SOLVED: To reduce the generation of pits in an LEP(liquid phase-epitaxial) film used as a magnetooptical element material even at the time of growing the LEP film having an increased thickness and also, to inhibit the loss in mass of a platinum crucible from being caused in the growth process of the LEP film, in the production. SOLUTION: In this production, a melt in a platinum crucible in which a magnetic garnet single crystal raw material is melted, is maintained at a growth temp. such that the melt is in a supersaturated state and in that state, a nonmagnetic garnet substrate used as a seed is immersed in the surface of the melt to grow a single crystal film on the surface of the substrate by a liquid phase-epitaxial(LEP) growth method and to produce a magnetooptical element material. At this time, a high temp. maintenance stage for maintaining the melt at a higher temp. (e.g. >=950 deg.C) than the growth temp. and a growth stage for growing the single crystal film at the growth temp. are altemately and plural times repeatedly performed, wherein: the first high temp. maintenance stage is a stage for melting and agitating the raw material and maintaining the resulting melt in the above high temp. state; and each of the second and the following high temp. maintenance stages consists of three steps, i.e., a step for gradually cooling the substrate on which the single crystal film is formed, by utilizing a temp. gradient within a furnace and thereafter taking out the substrate from the furnace to its outside, a step for replenishing the melt in the platinum crucible with the crystal component (i.e. the raw material) in an amount equivalent to the amount of that consumed by the growth of the single crystal film and a step for maintaining the melt in the above high temp. state and agitating the melt.

8. 发明专利

JPH0868975A FARADAY ROTATOR 失效
公开(公告)号：JPH0868975A
公开(公告)日：1996-03-12
申请号：JP22862594
申请日：1994-08-30
申请人： FUJI ELECTROCHEMICAL CO LTD
发明人： SUZUKI TOSHIYASU , KAWAI HIROTAKA , UMEZAWA HIROMITSU
IPC分类号： G02F1/09 , C30B29/28
摘要： PURPOSE: To obtain a wide range of wavelengths in a 1310nm wavelength range and to correspond to multiwavelength communication in this wavelength range. CONSTITUTION: This Faraday rotator is produced by laminating a film (A) comprising a LPE magnetic garnet single crystal expressed by compsn. formula R13-x Bix Fe5-y Zy O12 and a film (B) comprising a LPE magnetic garnet single crystal expressed by compsn. formula R23-z Smz Fe5 O12 . This rotator is used in the wavelength range from 1250nm to 1370nm. In formulae, R1 is a rare earth element including Y, Z is Al, In, Ga, x and y satisfy 0.3

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