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21. 发明专利

JP2009239120A Magnetoresistive element, and magnetic memory 有权
标题翻译：磁性元件和磁记忆
公开(公告)号：JP2009239120A
公开(公告)日：2009-10-15
申请号：JP2008084938
申请日：2008-03-27
申请人： Toshiba Corp , 株式会社東芝
发明人： KITAGAWA EIJI , YOSHIKAWA MASAHISA , NAGASE TOSHIHIKO , DAIBO TATATOMI , NAGAMINE MAKOTO , NISHIYAMA KATSUYA , KISHI TATSUYA , YODA HIROAKI
IPC分类号： H01L43/08 , G11C11/15 , H01F10/16 , H01F10/26 , H01L21/8246 , H01L27/105 , H01L43/10
CPC分类号： H01L43/08 , G11C11/161 , H01L27/222
摘要： PROBLEM TO BE SOLVED: To reduce variations in inversion current density upon magnetic reversal.
SOLUTION: A magnetoresistive element 10 includes an underlying layer 12 having a cubic or tetragonal crystal structure oriented in a (001) plane, a recording layer 13 provided on the underlying layer 12, having magnetic anisotropy perpendicular to a film surface, and having an fct (face-centered tetragonal) structure oriented in a (001) plane, a non-magnetic layer 14 provided on the recording layer 13, and a reference layer 15 provided on the non-magnetic layer 14, and having magnetic anisotropy perpendicular to the film surface. An in-plane lattice constant a1 of the underlying layer 12 and the in-plane lattice constant a2 of the recording layer 13 satisfy the following relation of |√2×a1/2-a2|/a2
摘要翻译：要解决的问题：为了减少反转电流密度的变化。解决方案：磁阻元件10包括具有在（001）面取向的立方或四方晶体结构的下层12，设置在下层12上的具有垂直于膜表面的磁各向异性的记录层13，以及具有在（001）面取向的fct（面心四边形）结构，设置在记录层13上的非磁性层14和设置在非磁性层14上的参考层15，具有垂直于磁性的各向异性到电影表面。下层12的面内晶格常数a1和记录层13的面内晶格常数a2满足¾√2×a1 / 2-a2¾/ a2

22. 发明专利

JP2003298025A Magnetic storage device 有权
标题翻译：磁性存储器件
公开(公告)号：JP2003298025A
公开(公告)日：2003-10-17
申请号：JP2002097889
申请日：2002-03-29
申请人： Toshiba Corp , 株式会社東芝
发明人： TAKAHASHI SHIGEKI , SAITO YOSHIAKI , UEDA TOMOMASA , YODA HIROAKI , AMANO MINORU , KISHI TATSUYA , NISHIYAMA KATSUYA , ASAO YOSHIAKI , IWATA YOSHIHISA
IPC分类号： G11C11/15 , H01L21/8246 , H01L27/105 , H01L43/08
CPC分类号： G11C11/1675
摘要： PROBLEM TO BE SOLVED: To provide a magnetic storage device which can prevent increase in the switching magnetic field and can realize stable storage holding operation, even if an element becomes microminiaturized.
SOLUTION: The magnetic storage device comprises a tunnel magnetoresistance effect element, having the junction including a recording layer which is formed of a ferromagnetic material in which the switching magnetic field changes with temperature, to change the magnetizing direction with external magnetic field, an insulation layer and a magnetized deposition layer formed of a ferromagnetic material, a temperature control layer laminated on the recording layer of the tunnel magnetoresistance effect element, and bit lines and digit lines which are allocated in the direction to cross with each other in order to give the current field for writing operation to the tunnel magnetoresistance effect element. When data is written to the tunnel magnetoresistance effect element, a current larger than that in the read operation is supplied.
COPYRIGHT: (C)2004,JPO
摘要翻译：解决的问题：即使元件变得微型化，提供一种可以防止开关磁场增加并且可以实现稳定的存储保持操作的磁存储装置。解决方案：磁存储装置包括隧道磁阻效应元件，其结点包括由开关磁场随温度变化的铁磁材料形成的记录层，以用外部磁场改变磁化方向，由铁磁材料形成的绝缘层和磁化沉积层，层叠在隧道磁阻效应元件的记录层上的温度控制层以及在彼此交叉的方向上分配的位线和数字线，以便给予隧道磁阻效应元件的写入操作的当前场。当数据被写入隧道磁阻效应元件时，提供大于读操作的电流。版权所有（C）2004，JPO

23. 发明专利

JP2003283000A Magnetoresistance effect element and magnetic storage device having the same 审中-公开
标题翻译：磁阻效应元件和具有相同功能的磁性存储器件
公开(公告)号：JP2003283000A
公开(公告)日：2003-10-03
申请号：JP2002088827
申请日：2002-03-27
申请人： Toshiba Corp , 株式会社東芝
发明人： NISHIYAMA KATSUYA , SAITO YOSHIAKI , AMANO MINORU
IPC分类号： G11C11/15 , G11C11/16 , H01F10/16 , H01F10/32 , H01L21/8246 , H01L27/105 , H01L43/08
CPC分类号： H01L43/10 , B82Y25/00 , G11C11/16 , H01F10/3254 , H01F10/3268 , H01F10/3272 , H01L27/224 , H01L27/228 , Y10T428/1114
摘要： PROBLEM TO BE SOLVED: To enable obtaining a magnetoresistance effect element wherein MR ratio is large when the size is reduced, thermal stability is superior and switching magnetic field is small, and to provide a magnetic storage device using the magnetoresistance effect element. SOLUTION: This magnetoresistance effect element is provided with a storage layer wherein a plurality of ferromagnetic layers are laminated via nonmagnetic layers, a magnetic film having at least one ferromagnetic layer, and a tunnel barrier layer arranged between the storage layer and the magnetic layer. The ferromagnetic layer of the storage layer is composed of Ni-Fe-Co ternary alloy and, in a ternary phase diagram of Ni-Fe-Co, has composition selected from either one composition region of an inside composition region surrounded by a straight line of Co 90(at.) Fe 10(at.) - Fe 30(at.) Ni 70(at.) , a straight line of Fe 80(at.) Ni 20(at.) -Fe 30(at.) Ni 70(at.) and a straight line of Fe 80(at.) Ni 20(at.) -Co 65(at.) Ni 35(at.) , and an inside composition region surrounded by a straight line of Fe 80(at.) Ni 20(at.) -Co 65(at.) Ni 35(at.) , a straight line of Co 90(at.) Fe 10(at.) -Fe 70(at.) Ni 30(at.) and a straight line of Co 90(at.) Fe 10(at.) -Fe 30(at.) Ni 70(at.) . The maximum roughness on an interface between the storage layer and the tunnel barrier layer and an interface between the magnetic layer and the tunnel barrier later is at most 0.4 nm. COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题为了获得当尺寸减小时MR比大的磁电阻效应元件，热稳定性优异，开关磁场小，并且提供使用磁阻效应元件的磁存储器件。解决方案：该磁阻效应元件设置有存储层，其中通过非磁性层层叠多个铁磁层，具有至少一个铁磁层的磁性膜和布置在存储层和磁体之间的隧道势垒层层。存储层的铁磁层由Ni-Fe-Co三元合金构成，在Ni-Fe-Co的三相图中，具有选自由直线的直线包围的内部组成区域的一个组成区域 70（at。）Fe 10（at。）Fe / SB> 30（at。）Ni 70（at。） / SB>，直线Fe 80（at。）Ni -Fe 30（at。）Ni SB> 70（at。）和直线Fe 80（at。）Ni 20（at。））和Ni（SB）35（at。）之间的内部组成区域，以及由Fe 80（at。）的直线包围的内部组成区域Ni （at。） Ni 35（at。），Co 90（at。）的直线 SB＆lt; SB＆gt; 10（at。）＆lt; SB＆gt; 70＆lt; SB＆gt; 70（at。） > 90（at。） Fe 10（at。） -Fe 30（at。）Ni 。存储层和隧道势垒层之间的界面上的最大粗糙度以及磁性层和隧道势垒之间的界面之后最多为0.4nm。版权所有（C）2004，JPO

24. 发明专利

JP2003282842A Magnetic memory 审中-公开
标题翻译：磁记忆
公开(公告)号：JP2003282842A
公开(公告)日：2003-10-03
申请号：JP2003008781
申请日：2003-01-16
申请人： Toshiba Corp , 株式会社東芝
发明人： KISHI TATSUYA , AMANO MINORU , SAITO YOSHIAKI , TAKAHASHI SHIGEKI , NISHIYAMA KATSUYA , UEDA TOMOMASA , YODA HIROAKI , ASAO YOSHIAKI , IWATA YOSHIHISA
IPC分类号： G11C11/15 , H01L21/8246 , H01L27/105 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To provide a high integration reliable magnetic memory element of low consumption by applying a magnetic field efficiently to a magnetic storage layer using a smaller writing current than the present. SOLUTION: The magnetic memory comprises a magnetoresistive element (21) having a magnetic storage layer, a writing wiring (22, 23) running in a first direction on or under the magnetoresistive element. The magnetization direction of the magnetic storage layer is varied by the magnetic field generated when a current is applied to the writing wiring. The center of gravity (G) of the cross section of the writing wiring provided by cutting it in the perpendicular direction to the first direction is deviated from the center of the thickness (C) of the wiring at the center of gravity toward the magnetoresistive element. COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：通过使用比目前更小的写入电流将磁场有效地施加到磁存储层来提供低消耗的高集成度可靠的磁存储元件。解决方案：磁存储器包括具有磁存储层的磁阻元件（21），在磁阻元件上或下方沿第一方向延伸的写入布线（22,23）。磁存储层的磁化方向由电流施加到写入布线时产生的磁场而变化。通过沿着与第一方向垂直的方向切割而提供的书写布线的横截面的重心（G）从布线重心朝向磁阻元件的厚度（C）的中心偏离。版权所有（C）2004，JPO

25. 发明专利

JP2014063922A Magnetoresistance effect element 有权
标题翻译：磁阻效应元素
公开(公告)号：JP2014063922A
公开(公告)日：2014-04-10
申请号：JP2012208788
申请日：2012-09-21
申请人： Toshiba Corp , 株式会社東芝
发明人： NAGAMINE MAKOTO , IKENO DAISUKE , UEDA KOJI , NISHIYAMA KATSUYA , NATORI KATSUAKI , YAMAKAWA KOJI
IPC分类号： H01L21/8246 , H01F10/16 , H01F10/32 , H01L27/105 , H01L29/82 , H01L43/08 , H01L43/10
CPC分类号： H01L43/02 , G11C11/161 , G11C11/1675 , H01L43/08 , H01L43/10
摘要： PROBLEM TO BE SOLVED: To provide a magnetoresistance effect element in which the bias voltage dependency of magnetoresistance ratio is steep.SOLUTION: A magnetoresistance effect element includes a ferromagnetic layer 103 having variable magnetization direction, a ferromagnetic layer 105 having an invariable magnetization direction, and a tunnel barrier layer 104 placed between the ferromagnetic layer 103 and the ferromagnetic layer 105. Energy barrier of the ferromagnetic layer 103 for the tunnel barrier layer 104 is higher than the energy barrier of the ferromagnetic layer 105 for the tunnel barrier layer 104. The ferromagnetic layer 105 contains a main component including at least one of Fe, Co, Ni, and additive elements selected from Mg, Al, Ca, Sc, Ti, V, Mn, Zn, As, Sr, Y, Zr, Nb, Cd, In, Ba, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Hf, Ta, W. A positive bias is applied to the ferromagnetic layer 105 when writing from parallel state to anti-parallel state.
摘要翻译：要解决的问题：提供一种磁阻效应元件，其中磁阻比的偏置电压依赖性陡峭。解决方案：磁阻效应元件包括具有可变磁化方向的铁磁层103，具有不变磁化方向的铁磁层105和布置在铁磁层103和铁磁层105之间的隧道势垒层104.用于隧道势垒层104的铁磁层103的能量势垒高于隧道势垒层104的铁磁层105的能量势垒。铁磁性层105含有包含选自Mg，Al，Ca，Sc，Ti，V，Mn，Zn，As，Sr，Y，Zr，Nb，Cd中的至少一种的Fe，Co，Ni和添加元素的主成分， In，Ba，La，Ce，Pr，Nd，Sm，Eu，Gd，Tb，Dy，Ho，Er，Tm，Yb，Lu，Hf，Ta，W。写入时对铁磁层105施加正偏压从平行状态到反平行状态。

26. 发明专利

JP2013235914A Magnetoresistive element and magnetic memory 审中-公开
标题翻译：磁性元件和磁记忆
公开(公告)号：JP2013235914A
公开(公告)日：2013-11-21
申请号：JP2012106611
申请日：2012-05-08
申请人： Toshiba Corp , 株式会社東芝
发明人： WATANABE DAISUKE , NISHIYAMA KATSUYA , NAGASE TOSHIHIKO , UEDA KOJI , KAI TADASHI
IPC分类号： H01L21/8246 , G11C11/15 , H01F10/16 , H01F10/30 , H01L27/105 , H01L29/82 , H01L43/08 , H01L43/10
CPC分类号： H01L43/02 , G11C11/161 , H01L27/228 , H01L43/08 , H01L43/10 , H01L43/12
摘要： PROBLEM TO BE SOLVED: To provide a magnetoresistive element of a spin injection write type that is capable of reducing a reverse current value and its variation.SOLUTION: A magnetoresistive element includes: a first magnetic layer 2 having a magnetization easy axis in a film-surface vertical direction and in which a magnetization direction is fixed to one direction; a second magnetic layer 3 having a magnetization easy axis in the film-surface vertical direction and in which a magnetization direction is variable; a first non-magnetic layer 4 provided between the first magnetic layer 2 and the second magnetic layer 3; and a third magnetic layer 22 having a magnetization easy axis in the film-surface vertical direction and in which a magnetization direction is fixed to the opposite direction of the first magnetic layer 2. The first magnetic layer 2 includes a structure in which a first magnetic material film 2a provided so as to be in contact with the first non-magnetic layer 4, a non-magnetic material film 2b provided so as to be in contact with the magnetic material film 2a, and a second magnetic material film 2c provided so as to be in contact with the non-magnetic material film 2b and containing CoW(0
摘要翻译：要解决的问题：提供能够减小反向电流值及其变化的自旋注入写入型的磁阻元件。解决方案：一种磁阻元件包括：第一磁性层2，其具有薄膜状的易磁化轴，表面垂直方向，其中磁化方向固定在一个方向上; 在膜表面垂直方向上具有易磁化轴并且磁化方向可变的第二磁性层3; 设置在第一磁性层2和第二磁性层3之间的第一非磁性层4; 以及第三磁性层22，其在膜表面垂直方向上具有易磁化轴，并且其磁化方向固定在与第一磁性层2相反的方向上。第一磁性层2包括其中第一磁性层设置成与第一非磁性层4接触的材料膜2a，设置成与磁性材料膜2a接触的非磁性材料膜2b和设置成与第一非磁性层4接触的第二磁性材料膜2c 与非磁性材料膜2b接触并且包含CoW（0

27. 发明专利

JP2013016645A Magnetoresistive element, magnetic memory, and method of manufacturing magnetoresistive element 有权
标题翻译：磁电元件，磁记忆和制造磁性元件的方法
公开(公告)号：JP2013016645A
公开(公告)日：2013-01-24
申请号：JP2011148446
申请日：2011-07-04
申请人： Toshiba Corp , 株式会社東芝
发明人： NAGASE TOSHIHIKO , WATANABE DAISUKE , UEDA KOJI , NISHIYAMA KATSUYA , KITAGAWA EIJI , NOMA KENJI , KAI TADASHI
IPC分类号： H01L21/8246 , H01L27/105 , H01L29/82 , H01L43/08 , H01L43/10 , H01L43/12
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1659 , G11C11/1675 , H01L27/228 , H01L43/12
摘要： PROBLEM TO BE SOLVED: To provide a spin-injection writing type magnetoresistive element, in which magnetization of a storage layer can be inverted at a low current.SOLUTION: There is provided a magnetoresistive element comprising: a storage layer 3 which includes a magnetization easy axis in a vertical direction of a film surface and a direction of magnetization of which is variable; a fixed layer 2 which includes a magnetization easy axis in the vertical direction of the film surface and a direction of magnetization of which is invariant; a non-magnetic layer 4 provided between the storage layer 3 and the fixed layer 2; and a wiring layer 10 arranged on a surface of the storage layer 3 opposite to a surface on which the non-magnetic layer 4 is arranged. The storage layer 3 has a configuration in which magnetic materials 31, 33 and non-magnetic materials 32, 34 are alternately stacked. The non-magnetic materials 32, 34 contain at least one element from a group of Ta, W, Nb, Mo, Zr, and Hf. The magnetic materials 31, 33 contain Co and Fe. One of the magnetic materials contacts the non-magnetic layer 4, and one of the non-magnetic materials contacts the wiring layer.
摘要翻译：要解决的问题：提供一种自旋注入型磁阻元件，其中存储层的磁化可以以低电流反转。解决方案：提供一种磁阻元件，包括：存储层3，其在膜表面的垂直方向上包括易磁化轴，并且其磁化方向是可变的; 固定层2，其在膜表面的垂直方向上包括易磁化轴，并且其磁化方向是不变的; 设置在存储层3和固定层2之间的非磁性层4; 以及布置在与设置有非磁性层4的表面相对的存储层3的表面上的布线层10。存储层3具有磁性材料31,33和非磁性体32,34交替堆叠的结构。非磁性材料32,34包含来自Ta，W，Nb，Mo，Zr和Hf的组中的至少一种元素。磁性材料31,33含有Co和Fe。磁性材料之一与非磁性层4接触，其中一个非磁性材料与布线层接触。版权所有（C）2013，JPO＆INPIT

28. 发明专利

JP2012069595A Magnetoresistive element and magnetic random access memory 有权
标题翻译：磁性元件和磁性随机存取存储器
公开(公告)号：JP2012069595A
公开(公告)日：2012-04-05
申请号：JP2010211204
申请日：2010-09-21
申请人： Toshiba Corp , 株式会社東芝
发明人： UEDA KOJI , KAI TADASHI , NAGASE TOSHIHIKO , NISHIYAMA KATSUYA , KITAGAWA EIJI , DAIBO TATATOMI , NAGAMINE MAKOTO , YODA HIROAKI
IPC分类号： H01L27/105 , H01L21/8246 , H01L29/82 , H01L43/08 , H01L43/10
CPC分类号： H01L43/08 , G11C11/16 , G11C11/1659 , H01F10/123 , H01F10/3254 , H01F10/3263 , H01F10/3286 , H01L43/10
摘要： PROBLEM TO BE SOLVED: To provide a magnetoresistive element with a large thermal agitation resistance in which spin injection flux reversal writing is possible with a low current.SOLUTION: The magnetoresistive element includes: an electrode layer having a metal layer containing any one of Mo, Nb, and W; a memory layer 3 which is arranged on the metal layer in contact the metal layer, has an easy axis of magnetization in a direction perpendicular to a film surface and has a variable magnetization direction; a reference layer 2 which is arranged on the memory layer 3, has an easy axis of magnetization in a direction perpendicular to the film surface and has an invariable magnetization direction; and a first nonmagnetic layer 4 provided between the memory layer 3 and the reference layer 2. The magnetization direction of the memory layer 3 can be varied by current penetrating the memory layer 3, the first nonmagnetic layer 4, and the reference layer 2.
摘要翻译：要解决的问题：提供具有大的热搅拌电阻的磁阻元件，其中以低电流可以进行自旋注入通量反转写入。解决方案：磁阻元件包括：具有包含Mo，Nb和W中的任一种的金属层的电极层; 布置在与金属层接触的金属层上的记忆层3在垂直于膜表面的方向上具有容易的磁化轴并且具有可变的磁化方向; 布置在存储层3上的参考层2在垂直于膜表面的方向上具有容易的磁化轴并且具有不变的磁化方向; 以及设置在存储层3和参考层2之间的第一非磁性层4.存储层3的磁化方向可以通过穿过存储层3，第一非磁性层4和参考层2的电流而改变。 P>版权所有（C）2012，JPO＆INPIT

29. 发明专利

JP2012064903A Magnetoresistance effect element, magnetic memory and method of manufacturing magnetoresistance effect element 有权
标题翻译：磁阻效应元件，磁记忆和制造磁阻效应元件的方法
公开(公告)号：JP2012064903A
公开(公告)日：2012-03-29
申请号：JP2010210180
申请日：2010-09-17
申请人： National Institute Of Advanced Industrial & Technology , Toshiba Corp , 株式会社東芝 , 独立行政法人産業技術総合研究所
发明人： KITAGAWA EIJI , DAIBO TATATOMI , HASHIMOTO YUTAKA , TOKO MASARU , KAI TADASHI , NAGAMINE MAKOTO , NAGASE TOSHIHIKO , NISHIYAMA KATSUYA , UEDA KOJI , YODA HIROAKI , YAKUSHIJI KEI , YUASA SHINJI , KUBOTA HITOSHI , NAGAHAMA TARO , FUKUSHIMA AKIO , ANDO KOJI
IPC分类号： H01L27/105 , H01F10/14 , H01F10/16 , H01F10/32 , H01L21/8246 , H01L43/08
CPC分类号： H01L43/10 , B82Y40/00 , G11C11/161 , H01F10/133 , H01F10/3286 , H01F41/307 , H01L27/228 , H01L29/82 , H01L43/08 , H01L43/12
摘要： PROBLEM TO BE SOLVED: To improve the device characteristics of a magnetoresistance effect element.SOLUTION: The magnetoresistance effect element includes a second magnetic layer 92 having magnetic anisotropy in the direction perpendicular to the film surface and an invariable orientation of magnetization, a first magnetic layer 91 having magnetic anisotropy in the direction perpendicular to the film surface and a variable orientation of magnetization, and a nonmagnetic layer 93 provided between the first and second magnetic layers 91, 92. The first magnetic layer 91 has a magnetization film 21 containing at least one element selected from a first group consisting of Tb, Gd and Dy, and at least one element selected from a second group consisting of Co and Fe. The magnetization film 21 contains an amorphous phase 29 and a crystal 28 having a particle size of 1 nm or less.
摘要翻译：要解决的问题：提高磁阻效应元件的器件特性。解决方案：磁阻效应元件包括在垂直于膜表面的方向上具有磁各向异性的第二磁性层92和磁化的不变取向，在垂直于膜表面的方向上具有磁各向异性的第一磁性层91和磁化的可变取向以及设置在第一和第二磁性层91,92之间的非磁性层93.第一磁性层91具有包含至少一种选自Tb，Gd和Dy的元素的磁化膜21 ，以及选自Co和Fe组成的第二组中的至少一种元素。磁化膜21包含非晶相29和粒径为1nm以下的晶体28。版权所有（C）2012，JPO＆INPIT

30. 发明专利

JP2012064774A Magnetic resistance element and magnetic memory 有权
标题翻译：磁阻元件和磁记忆
公开(公告)号：JP2012064774A
公开(公告)日：2012-03-29
申请号：JP2010208042
申请日：2010-09-16
申请人： National Institute Of Advanced Industrial & Technology , Toshiba Corp , 株式会社東芝 , 独立行政法人産業技術総合研究所
发明人： NAGASE TOSHIHIKO , KAI TADASHI , NAGAMINE MAKOTO , NISHIYAMA KATSUYA , KITAGAWA EIJI , DAIBO TADAOMI , UEDA KOJI , YODA HIROAKI , YAKUSHIJI KEI , YUASA SHINJI , KUBOTA HITOSHI , NAGAHAMA TARO , FUKUSHIMA AKIO , ANDO KOJI
IPC分类号： H01L27/105 , H01F10/16 , H01F10/32 , H01L21/8246 , H01L29/82 , H01L43/08
CPC分类号： H01L27/228 , G11C11/161 , H01L43/08 , H01L43/10
摘要： PROBLEM TO BE SOLVED: To provide a spin-implantation writing magnetic resistance element, which is thermally stable and which can be reversed in magnetization with a low current.SOLUTION: A magnetic resistance element according to an embodiment comprises: a first magnetic layer having an axis of easy magnetization in a film surface perpendicular direction; a second magnetic layer having an axis of easy magnetization in a film surface perpendicular direction; and a non-magnetic layer provided between the first and second magnetic layers. At least one of the first and second magnetic layers has a structure in which a first magnetic film and a second magnetic film provided on the non-magnetic layer side are stacked. The second magnetic film has a structure in which a magnetic material layer and a non-magnetic material layer are stacked on each other repeatedly for at least two cycles. The non-magnetic material layer of the second magnetic film contains at least one element selected from the group consisting of Ta, W, Hf, Zr, Nb, Mo, Ti, V and Cr. The direction magnetization of one of the first and second magnetic layers can be made variable by forcing electric current to flow between the first and second magnetic layers through the non-magnetic layer.
摘要翻译：要解决的问题：提供一种热稳定的自旋注入写入磁阻元件，并且可以以低电流在磁化中反转。解决方案：根据实施例的磁阻元件包括：在膜表面垂直方向上具有容易磁化的轴的第一磁性层; 在膜表面垂直方向具有易磁化轴的第二磁性层; 以及设置在第一和第二磁性层之间的非磁性层。第一和第二磁性层中的至少一个具有其中堆叠设置在非磁性层侧的第一磁性膜和第二磁性膜的结构。第二磁性膜具有其中磁性材料层和非磁性材料层重复堆叠至少两个循环的结构。第二磁性膜的非磁性材料层含有选自Ta，W，Hf，Zr，Nb，Mo，Ti，V和Cr中的至少一种元素。可以通过迫使电流通过非磁性层在第一和第二磁性层之间流动来使得第一和第二磁性层之一的方向磁化可变。版权所有（C）2012，JPO＆INPIT

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