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21. 发明专利

JP2001255291A METHOD AND DEVICE FOR DETECTING DEFECT OF TRANSFER MASK 失效
公开(公告)号：JP2001255291A
公开(公告)日：2001-09-21
申请号：JP2000067056
申请日：2000-03-10
申请人： TOPPAN PRINTING CO LTD
发明人： ITOU KOUJIROU , KONISHI TOSHIO , SASAKI HIRONOBU , EGUCHI HIDEYUKI , TAMURA AKIRA
IPC分类号： G01B15/00 , G01B15/04 , G01N23/04 , G01N23/225 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To provide a method and a device for detecting defects of a transfer mask capable of detecting defects such as foreign matters and a projection on a pattern opening of the transfer mask. SOLUTION: The device for detecting defects of the transfer mask comprises an electron gun 10 for irradiating an electron beam, a stage 40 for driving and mounting the transfer mask 50, a passing electron detector 20 for detecting passing electrons of the transfer mask 50, a secondary electron detector 30 for detecting secondary electrons of the transferring mask 50, a defect extracting part 70 for taking the passing electron signal and a secondary electron signal obtained by the passing electron detector 20 and the secondary electron detector 30 and determining whether a defect exists by comparing with a reference signal, a display part 80 for displaying the defect as an image, and a device control part 60 for driving and controlling whole the detecting device and each unit.

22. 发明专利

JP2001255130A MASK DIMENSION MEASURING INSTRUMENT AND MEASURING METHOD USING THE INSTRUMENT 失效
公开(公告)号：JP2001255130A
公开(公告)日：2001-09-21
申请号：JP2000067065
申请日：2000-03-10
申请人： TOPPAN PRINTING CO LTD
发明人： ITOU KOUJIROU , TAMURA AKIRA , KONISHI TOSHIO , SASAKI HIRONOBU , EGUCHI HIDEYUKI
IPC分类号： G01B15/00 , G03F1/84 , G03F1/86 , H01J37/20 , H01J37/244 , H01J37/28 , G03F1/08
摘要： PROBLEM TO BE SOLVED: To provide a mask dimension measuring instrument, capable of measuring the dimension of the minute pattern or hole on a mask in a non destructive and non contact state with high accuracy and also capable of measuring a long dimension not entering a measuring visual field, and a measuring method using the same. SOLUTION: The mask dimension measuring instrument is equipped with a movable stage 3 for placing the mask 6 to be measured, measuring means 4, 7 for measuring the moving distance of the stage, an irradiation means for irradiating the mask to be measured with an electron beam and a measuring means for measuring the intensity of the secondary electrons or reflected electrons discharged from the mask to be measured.

23. 发明专利

JP2008243916A Manufacturing method for mask for charged-particle ray exposure and mask for charged-particle ray exposure 有权
标题翻译：充电粒子曝光掩模的制造方法和充电粒子曝光的掩模
公开(公告)号：JP2008243916A
公开(公告)日：2008-10-09
申请号：JP2007078833
申请日：2007-03-26
申请人： Toppan Printing Co Ltd , 凸版印刷株式会社
发明人： ITOU KOUJIROU , EGUCHI HIDEYUKI
IPC分类号： H01L21/027 , G03F1/20 , G03F1/54
摘要： PROBLEM TO BE SOLVED: To provide a mask for charged-particle ray exposure capable of checking or solving the generation of distortion, positional displacement or the like of a membrane resulting from heat accumulation during exposure without obstructing the formation of a fine mask pattern and a manufacturing method for the mask. SOLUTION: The mask for charged-particle ray exposure has a two-stage structure superposing a silicon wafer 200 on the upper side and the silicon wafer 100 on the lower side. A pattern for transfer is formed on the surface side of the silicon wafer 100 on the lower side, and a pattern for transfer, which left-right inverts or upper-lower inverts the pattern formed on the surface side of the silicon wafer 100 on the lower side, is formed on the surface side of the silicon wafer 200 on the upper side. The surface side of the silicon wafer 200 on the upper side and the surface side of the silicon wafer 100 on the lower side are stuck so that patterns 3 and 6 for transfer for both silicon wafers 100 and 200 coincide. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于检查或解决由于曝光期间的热积聚而产生的膜的变形，位置偏移等的产生的带电粒子射线曝光的掩模，而不妨碍形成微细掩模图案和掩模的制造方法。解决方案：用于带电粒子射线曝光的掩模具有在上侧叠置硅晶片200并且在下侧叠置硅晶片100的两级结构。在硅晶片100的下侧的表面侧形成有用于转印的图案，左右反转或上下反转的图案在硅晶片100的表面侧上形成的图案下侧形成在上侧的硅晶片200的表面侧。硅晶片200的上侧的表面侧和下侧的硅晶片100的表面侧被粘合，使得用于两个硅晶片100和200的转印的图案3和6重合。版权所有（C）2009，JPO＆INPIT

24. 发明专利

JP2008103386A Manufacturing method of stencile mask for ion implantation 审中-公开
标题翻译：用于离子植入的STENCILE掩模的制造方法
公开(公告)号：JP2008103386A
公开(公告)日：2008-05-01
申请号：JP2006282452
申请日：2006-10-17
申请人： Toppan Printing Co Ltd , 凸版印刷株式会社
发明人： SUMITA TOMOYA , EGUCHI HIDEYUKI , TAMURA AKIRA
IPC分类号： H01L21/266
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method of a stencile mask for ion implantation, having excellent heat resistance, durability and ion implantation accuracy by reducing a critical defect of a stencile mask for ion implantation such as deformation of a membrane due to heat generated from an ion beam in an ion implantation process using the stensile mask for ion implantation to be executed in manufacture of semiconductor devices.
SOLUTION: The manufacturing method of the stencile mask for ion implantation includes a step of forming a first thin-film layer 22 and a second thin-film layer 23 on at least one surface of a supporting layer 21 in this order; a step of forming an opening 26 on the other surface of the supporting layer 21; and a step of forming a through hole pattern 128 for ion implantation on the second thin-film layer 23, and then, forming a through hole pattern 229 for ion implantation on the first thin-film layer 22, using the second thin-film layer 23 as an etching mask.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：为了提供用于离子注入的稳定掩模的制造方法，具有优异的耐热性，耐久性和离子注入精度，通过减少用于离子注入的稳定掩模的临界缺陷，例如膜的变形在离子注入工艺中使用离子注入的阻挡掩模从离子束产生的热量在半导体器件的制造中执行。解决方案：用于离子注入的振动掩模的制造方法包括以下顺序在支撑层21的至少一个表面上形成第一薄膜层22和第二薄膜层23的步骤; 在支撑层21的另一个表面上形成开口26的步骤; 以及在第二薄膜层23上形成用于离子注入的通孔图案128的步骤，然后在第一薄膜层22上形成用于离子注入的通孔图案229，使用第二薄膜层 23作为蚀刻掩模。版权所有（C）2008，JPO＆INPIT

25. 发明专利

JP2006073869A Stencil mask, and stencil mask blanks 审中-公开
标题翻译： STENCIL MASK和STENCIL MASK BLANKS
公开(公告)号：JP2006073869A
公开(公告)日：2006-03-16
申请号：JP2004256965
申请日：2004-09-03
申请人： Toppan Printing Co Ltd , 凸版印刷株式会社
发明人： YOTSUI KENTA , SUMITA TOMOYA , NEGISHI YOSHIYUKI , EGUCHI HIDEYUKI , TAMURA AKIRA
IPC分类号： H01L21/027 , G03F1/20
摘要： PROBLEM TO BE SOLVED: To provide a stencil mask wherein the exposure throughput of the stencil mask can be improved, which has high rigidity and strong structure, and wherein, its IP control for positional alignment is easy, and moreover, heat radiating quality is excellent, and stencil mask blanks. SOLUTION: In the stencil mask, there are provided a first complementary pattern partition I including a plurality of membrane dividing regions divided by a plurality of beam bands provided substantially in parallel with each other, a second complementary pattern partition II provided adjacently to the first complementary pattern partition and including a plurality of membrane dividing regions divided by the plurality of beam bands provided substantially in parallel with each other, and a third complementary pattern partition III provided adjacently to the second complementary pattern partition and including a plurality of membrane dividing regions divided by the plurality of beam bands provided substantially in parallel with each other. Further in the stencil mask, there are arranged in series with each other and adjacently to each other in one direction the plurality of membrane dividing regions 5A2, 5A3 belonging to the first, second, and third complementary pattern partitions I, II and III. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种模板掩模，其中可以提高模板掩模的曝光生产量，其具有高刚性和强结构，并且其中用于位置对准的IP控制容易，此外，散热质量很好，和模板面具毛坯。解决方案：在模板掩模中，提供了第一互补图案分隔件I，其包括由基本上彼此平行设置的多个光束带分隔开的多个膜分隔区域，第二互补图案分隔件II邻近设置所述第一互补图案分隔部并且包括由基本上彼此平行设置的所述多个光束带分割的多个膜分割区域，以及与所述第二互补图案分隔件相邻设置的第三互补图案分隔件，并且包括多个膜分割由基本上彼此平行设置的多个光束带分割的区域。此外，在模板掩模中，在一个方向上彼此串联并且彼此相邻地排列属于第一，第二和第三互补图案的多个膜分隔区域5A2,5A3分隔I，II和III。版权所有（C）2006，JPO＆NCIPI

26. 发明专利

JP2006049364A Stencil mask and stencil mask blank 有权
标题翻译： STENCIL MASK和STENCIL MASK BLANK
公开(公告)号：JP2006049364A
公开(公告)日：2006-02-16
申请号：JP2004224221
申请日：2004-07-30
申请人： Toppan Printing Co Ltd , 凸版印刷株式会社
发明人： YOTSUI KENTA , SUMITA TOMOYA , EGUCHI HIDEYUKI , NEGISHI YOSHIYUKI , TAMURA AKIRA
IPC分类号： H01L21/027 , G03F1/50 , G03F1/68
摘要： PROBLEM TO BE SOLVED: To provide a stencil mask of high rigidity along with stencil mask blanks. SOLUTION: The ends of four beam band segments meet each other at the central part of membrane, and each of the end parts abuts with the side of other beam band segments. A plurality of membrane divisions include the membrane division which is surrounded by four sides with vertical and lateral beam bands, being parallel to either X-axis or Y-axis while orthogonal to each other to reinforce each other. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供具有高刚性的模板掩模以及模板掩模坯料。
解决方案：四个光束带段的端部在膜的中心部分彼此相遇，并且每个端部部分与其他束带段的侧面相邻。多个分隔膜包括由垂直和横向束带四个边包围的膜分隔件，它们彼此正交地彼此平行，X轴或Y轴平行。版权所有（C）2006，JPO＆NCIPI

27. 发明专利

JP2006049363A Stencil mask and stencil mask blank 有权
标题翻译： STENCIL MASK和STENCIL MASK BLANK
公开(公告)号：JP2006049363A
公开(公告)日：2006-02-16
申请号：JP2004224220
申请日：2004-07-30
申请人： Sony Corp , Toppan Printing Co Ltd , ソニー株式会社 , 凸版印刷株式会社
发明人： YOTSUI KENTA , SUMITA TOMOYA , SUZUKI MANABU , EGUCHI HIDEYUKI , TAMURA AKIRA , IWASE KAZUYA , NOHAMA SHIYOUJI , MORIYA SHIGERU , KITAGAWA TETSUYA , NAKANO HIROYUKI
IPC分类号： H01L21/027 , G03F1/50 , G03F1/68
摘要： PROBLEM TO BE SOLVED: To provide a stencil mask, along with stencil mask blanks, capable of easily determining an etching condition. SOLUTION: A difference between a maximum value and a minimum value of two-dimensional aspect ratio 2DAR, where 2DAR=ä(ARx 2 +ARy 2 )/2} 1/2 , in a plurality of membrane divisions, is 1.5 or less. Here, ARx is aspect ratio (=Tz/Lx) of thickness Tz of a substrate which is dug by etching in Z-axis direction against length Lx in X-axis direction of the opening to be a membrane division: ARy is aspect ratio (=Tz/Ly) of thickness Tz of substrate dug by etching in Z-axis direction against length Ly in Y-direction of the opening to be a membrane division: and thickness of substrate Tz corresponds to the height of a support frame or beam. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供能够容易地确定蚀刻条件的模板掩模以及模板掩模坯料。解决方案：2DAR =ä（ARx 2 + ARy 2 ）/ 2的二维宽高比2DAR的最大值和最小值之间的差异在多个膜分割中， 1/2 为1.5以下。这里，ARx是通过在Z轴方向上通过蚀刻在开口的X轴方向上的长度Lx在Z轴方向上蚀刻的基板的厚度Tz的纵横比（= Tz / Lx）成为膜分割：ARy是纵横比在Z轴方向上通过蚀刻Z轴方向的长度L y作为膜分割的开口的Y方向，衬底Tz的厚度Tz = Tz / Ly），衬底Tz的厚度对应于支撑框架或梁的高度。版权所有（C）2006，JPO＆NCIPI

28. 发明专利

JP2004235295A Soi substrate and method of manufacturing the same, mask blank using the same, transfer mask, and method of exposing the same 审中-公开
公开(公告)号：JP2004235295A
公开(公告)日：2004-08-19
申请号：JP2003019901
申请日：2003-01-29
申请人： Toppan Printing Co Ltd , 凸版印刷株式会社
发明人： EGUCHI HIDEYUKI , TAMURA AKIRA
IPC分类号： G03F1/20 , H01L21/027 , G03F1/16
摘要： PROBLEM TO BE SOLVED: To provide an SOI (silicon on insulator) substrate to form a self-standing membrane having internal stress controlled with tensile stress without requirement of diffusing process and moreover without reduction in thickness of intermediate insulation film, and also to provide a method of manufacturing the substrate, a mask blank using the substrate, a transfer mask, and a method of exposing the mask.
SOLUTION: In the SOI substrate, an intermediate oxide film layer is formed of silicon, oxygen, nitrogen, and silicon compound including other elements, namely, carbon, phosphorus, sodium, lead, bismuth, cadmium, and tellurium, and an element ratio of oxygen is larger than that of nitrogen. In the method of manufacturing the SOI substrate, the low stress intermediate oxide film layer is formed with the evacuated CVD method in which a flow rate of SiH
4 gas is fixed and a flow rate of the N
2 O gas is controlled and moreover the self-standing membrane having 0 to 50 MPa internal stress can also be formed.
COPYRIGHT: (C)2004,JPO&NCIPI

29. 发明专利

JP2002289496A METHOD FOR CREATING WRITING DATA FOR ELECTRON BEAM EXPOSURE AND ELECTRON BEAM WRITING, AND METHOD FOR MANUFACTURING PHOTO MASK, X-RAY MASK, AND MASK FOR CHARGED BEAM PROJECTION ALIGNING 失效
公开(公告)号：JP2002289496A
公开(公告)日：2002-10-04
申请号：JP2001085161
申请日：2001-03-23
申请人： TOPPAN PRINTING CO LTD
发明人： TOMIYAMA KOZUE , TAMURA AKIRA , KONISHI TOSHIO , ITOU KOUJIROU , SASAKI HIRONOBU , EGUCHI HIDEYUKI
IPC分类号： G03F1/20 , G03F1/22 , G03F1/68 , G03F7/20 , H01L21/027 , G03F1/08
摘要： PROBLEM TO BE SOLVED: To provide a method for creating writing data for electron beam exposure and electron beam writing, and a method for manufacturing a photo mask, an X-ray mask, and a mask for charged beam projection aligning for creating a mask pattern exactly same as a designed value with an existing low accelerating voltage electron beam writing system by a variable shaped method. SOLUTION: The electron beam writing by the variable shaped method comprises steps for: creating an address by dividing all pattern areas for electron beam writing into a grid enough smaller than a minimum mask pattern size; obtaining energy storage distribution data in a resist every each address in the all pattern areas based on the superposition of an energy storage distribution function f (r), and the position coordinate data of the mask pattern; grading them in accordance with the relative value of the energy storage among every mesh split pattern; obtaining an offset value of an electron beam dose in accordance with ranks given in each mesh division pattern; and compensating the electron beam dose.

30. 发明专利

JP2002164275A MASK HOLDER FOR CHARGED PARTICLE BEAM EXPOSURE 失效
公开(公告)号：JP2002164275A
公开(公告)日：2002-06-07
申请号：JP2000360820
申请日：2000-11-28
申请人： TOPPAN PRINTING CO LTD
发明人： ITOU KOUJIROU , KONISHI TOSHIO , SASAKI HIRONOBU , EGUCHI HIDEYUKI , TOMIYAMA KOZUE
IPC分类号： G03F1/20 , G03F7/20 , H01L21/027 , H01L21/68 , H01L21/683 , G03F1/16
摘要： PROBLEM TO BE SOLVED: To provide a mask holder for the charged particle beam exposure, which mounts/fixes a mask on a mask holder at a proper plane accuracy and mounts a mask on a mask holder with very little foreign substances deposited on the mask surface, i.e., a charged particle beam irradiating surface. SOLUTION: The mask holder for the charged particle beam exposure comprises openings provided, according to an opening pattern of a charged particle beam exposure mask, a charged particle beam irradiating holder member, a charged particle beam emission holder member for sandwiching the mask and recesses in contact portions of the irradiation holder member or the irradiation holder member and the emission holder member with the exposure mask. Or the mask holder comprises holes deeper than the recesses or through-holes, at least in the contact portions of the irradiation holder member with peripheral corners of the mask.

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