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21. 发明专利

JPH0247266A TREATING DEVICE 失效
公开(公告)号：JPH0247266A
公开(公告)日：1990-02-16
申请号：JP19573088
申请日：1988-08-04
申请人： TEL SAGAMI LTD
发明人： MIYAGI KATSUNOBU , KONO TOSHIAKI , KITAYAMA HIROBUMI
IPC分类号： C23C16/44 , B01J3/02 , C23C16/455 , C23F4/00 , H01L21/205 , H01L21/302 , H01L21/3065
摘要： PURPOSE:To avert the generation of a pressurized state in a treating vessel and to improve safety by providing a relief valve which discharges a gas to a discharge path in combination at the time of resetting the inside of a reaction tube in a reduced pressure state to an atm. pressure. CONSTITUTION:The inside of the reaction tube 1 in which a wafer is installed is reduced to the desired reduced pressure state by a vacuum pump 23 and is heated to a prescribed temp. The reactive gas is supplied into the tube from an introducing pipe 12 and a film is formed on the wafer. The reactive gas is discharged via a main valve 21 upon ending of the treatment of the wafer and thereafter the valve is closed and the inert gas is introduced into the tube from an introducing pipe 13 to gradually restore the atm. pressure. A vent valve 25 is opened while the pressure in the reaction tube 11 is measured by a pressure gage 24. Reaction products, etc., stick to the vent valve 25 and clog the valve when the above-mentioned operation is repeatedly carried out; therefore, another vent valve 26 as the relief valve is provided in parallel with the vent valve 25 and is so set as to be opened when the abnormal pressurized state is attained in the reaction tube 1. The pressurization of the tube inside is thus prevented. The safety is improved and the downtime of the device is shortened in this way.

22. 发明专利

JP2000012475A JIG FOR CONTAINING ARTICLE TO BE PROCESSED AND HEAT TREATMENT SYSTEM USING THE JIG 失效
公开(公告)号：JP2000012475A
公开(公告)日：2000-01-14
申请号：JP19370298
申请日：1998-06-24
申请人： IWATE TOSHIBA ELECTR0NICS KK , TOSHIBA CORP , TOKYO ELECTRON LTD
发明人： SUZUKI SHIZUO , KITAMIYA HISASHI , KITAYAMA HIROBUMI
IPC分类号： H01L21/683 , C23C16/458 , C30B25/12 , C30B31/14 , H01L21/22 , H01L21/68
摘要： PROBLEM TO BE SOLVED: To provide a jig for containing an article to be processed in which the number of particles to be generated can be suppressed by supporting the article to be processed at three points. SOLUTION: Three posts 76A-76C having a plurality of supporting grooves 82A-82C made at a specified pitch in order to support a plurality of article to be processed at the circumferential fringe thereof are secured, at the opposite ends thereof, by two end plates 78, 80 such that the articles to be processed can be supported horizontally at three points. In such a jig tar containing the articles to be processed, two supporting grooves 82A, 82B located on the side for carrying-in/carrying-out the articles out of three supporting grooves at same horizontal level of each post, are located symmetrically to an axis 84 extending in parallel with the direction for carrying-in/carrying-out the articles and passing through the center O of the article and the supporting groove 82C is located remotely from the axis. Since the article is supported at three points, the number of particles to be generated can be suppressed.

23. 发明专利

JP2000323464A APPARATUS AND METHOD FOR SUPPLYING GAS FOR SEMICONDUCTOR MANUFACTURING APPARATUS 失效
公开(公告)号：JP2000323464A
公开(公告)日：2000-11-24
申请号：JP2000103112
申请日：2000-04-05
申请人： TOKYO ELECTRON LTD , FUJIKIN KK
发明人： KITAYAMA HIROBUMI , KURONO YOICHI , IKEDA SHINICHI , MASUDA HISAYA
IPC分类号： C23C16/44 , C23C16/455 , F17D1/04 , H01L21/00 , H01L21/205 , H01L21/302 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To downsize the apparatus and reduce the manufacturing cost and maintenance control cost by grouping the same or a plurality of kinds of gases to be fed to a semiconductor device so that the gas in one group is fed to the semiconductor device economically through one flow rate controller. SOLUTION: Required gases are fed from gas feeders A1 to A3 to various processes B1 to B3 executed in a process reactor R.R forming a part of a semiconductor manufacturing apparatus. For the process B1 e.g. in the reactor R.R, a gas feed valve V1 is opened and gas feed valves V2, V3 are closed, and gases in gas feed sources G1 to G4 are switched and fed from a gas supply A1 one after another into the reactor R.R, wherein the gases from the feed sources G1 to G4 are sent to the gas feed valve V1 through gas feed side valves VG1 to VG4 via one flow rate controller FRC and a gas take-out hole F1.

24. 发明专利

JP2002217178A EQUIPMENT AND METHOD OF PROCESSING 失效
公开(公告)号：JP2002217178A
公开(公告)日：2002-08-02
申请号：JP2001014348
申请日：2001-01-23
申请人： TOKYO ELECTRON LTD
发明人： KITAYAMA HIROBUMI , MATSUSHIMA NORIAKI
IPC分类号： C23C16/46 , B44C1/22 , C03C15/00 , C23C16/511 , C23F1/00 , C30B31/14 , C30B31/16 , H01L21/00 , H01L21/28 , H01L21/302 , H01L21/306 , H01L21/3065 , H01L21/324 , H01L21/768
摘要： PROBLEM TO BE SOLVED: To provide an equipment of processing, with which a low temperature processing and a high temperature processing can be carried out in one container of processing and temperature-fall operation which usually require longer time compared to warming operation can be carrying out rapidly. SOLUTION: The equipment of processing has a container of processing 24 which can be evacuated of air, a process gas supplying means 148 which feeds required processing gas into the processing container, and a mounting stand 40 for mounting a processing body W to be processed. A heat transfer medium channel 50 for running the heat transfer medium to the mounting stand is formed. The heat medium path is constructed as to be connected to a heat transfer medium selection feed mechanism 54 which selectively feeds a medium for cooling for carrying out low temperature processing and heating medium for heating for carrying out high temperature processing. Thus, the low temperature processing and the high temperature processing can be carried out in one processing container and the temperature-fall operation which usually requires long time compared to that of the warming operation can be carried out rapidly.

25. 发明专利

JPH07283159A HEAT TREATMENT DEVICE 失效
公开(公告)号：JPH07283159A
公开(公告)日：1995-10-27
申请号：JP9812994
申请日：1994-04-11
申请人： TOKYO ELECTRON LTD
发明人： KITAYAMA HIROBUMI , SHIBATA TOSHIMITSU , MIYAHISA TOSHIAKI
IPC分类号： H01L21/22 , H01L21/205 , H01L21/31 , H01L21/324
摘要： PURPOSE:To provide a heat treatment device which is improved in thermal responsibility by a method wherein a temperature sensor is provided to a spot which is located adjacent to a work inside the device and large in thermal capacity and where a reaction product attaches. CONSTITUTION:A work W is thermally treated in a heat treatment device 38 through such a manner that the work W is placed on a processing boat 10 provided onto a heat insulating cylinder 21, introduced into an insulating cylinder 21, and subjected to a heat treatment, wherein a temperature sensor 46 is provided to a film forming area 44 which is comparatively large in thermal capacity and located in a lower part of a gap 54 between an inner tube 4 and the heat insulating cylinder 21. By this setup, a heat treatment device of this constitution can be enhanced in thermal responsibility and accurately detected in temperature.

26. 发明专利

JPH07254570A HEAT TREATMENT METHOD 失效
公开(公告)号：JPH07254570A
公开(公告)日：1995-10-03
申请号：JP4223195
申请日：1995-03-02
申请人： TOKYO ELECTRON LTD
发明人： TANAKA DAISUKE , KITAYAMA HIROBUMI
IPC分类号： H01L21/302 , H01L21/22 , H01L21/3065
摘要： PURPOSE:To improve the quality of films formed by heating workpieces close to a specified temperature, etching them in a low-pressure etching gas atmosphere to clean their surfaces, and thereafter forming a film on the surfaces in a low-pressure material gas atmosphere. CONSTITUTION:Semiconductor wafers 9a are heated to a specified temperature in a reaction tube 1a. A specified degree of vacuum is maintained in the reaction tube 1a, and further etching gas, such as Ar gas, is introduced there. Thus the semiconductor wafers 9a are cleaned by sputter etching. After the completion of the cleaning, the reaction tube 1a is purged with H2 gas or the like. A specified degree of vacuum is thereafter maintained in the reaction tube 1a by means of a main vacuum exhaust system 7, and further material gas, such as SiH2Cl2, HCl, B2H6 and PH3 gasses, is introduced there. Temperature control is performed so that the temperature of the semiconductor wafers 9a is maintained a specified treatment value, and further films are formed.

27. 发明专利

JPH0745547A HEAT TREATMENT DEVICE 失效
公开(公告)号：JPH0745547A
公开(公告)日：1995-02-14
申请号：JP20706993
申请日：1993-07-29
申请人： TOKYO ELECTRON LTD
发明人： KITAYAMA HIROBUMI
IPC分类号： H01L21/22 , H01L21/324
摘要： PURPOSE:To enable the total length of a treated body boat to be minimized or the process margin to be widened by mounting the treated bodies on the boat at uneqaul pitches. CONSTITUTION:Within the title heat treatment device wherein a treated body boat 10 wherein plural treated bodies W are arranged at a specific pitch as well as plural dummy treated bodies DW are also arranged at the specific pitch on both sides of the treated bodies W is contained in a treating vessel 8, for the heat treatment the pitch L1 of the dummy treated bodies DW is set up to be smaller than the pitch L2 of the treated bodies W thereby enabling the level of the treated body boat 10 to be cut down for making the title heat treatment device compact.

28. 发明专利

JPH07302767A VERTICAL HEAT TREATMENT DEVICE 失效
公开(公告)号：JPH07302767A
公开(公告)日：1995-11-14
申请号：JP11768894
申请日：1994-05-06
申请人： TOKYO ELECTRON LTD
发明人： KITAYAMA HIROBUMI , MATSUSHIMA NORIAKI
IPC分类号： H01L21/22 , H01L21/205 , H01L21/31
摘要： PURPOSE:To improve the maintenability such as cleaning, etc., of the inner vessel of a reaction vessel while avoiding the pollution of workpiece as well as equalizing the processing gas flow for increasing the production yield. CONSTITUTION:The title vertical heat treatment device is composed of a reaction vessel 1 arranged in a heater 5, a bottomed cylindrical outer vessel 2 having lower aperture part, another bottomed cylindrical inner vessel 3 having lower aperture part detachably arranged for containing wafers W through the intermediary of a seal mechanism in the outer vessel 2, besides, a plurality of treatment gas communicating holes 20 in the circumferential direction on the upper part of the inner vessel 3. Through these procedures, the processing gas fed from the leading-in port 11 provided on the lower part of the inner vessel 3 into the inner vessel 3 is dispersed into the treatment gas communicating holes 20 to be externally exhausted from an exhaust port 13 provided on the lower part of the outer vessel 2 through the intermediary of the space between the outer and inner vessels 2 and 3, thereby enabling treatment gas flow to be equalized.

29. 发明专利

JPH07263370A HEAT TREATMENT DEVICE 失效
公开(公告)号：JPH07263370A
公开(公告)日：1995-10-13
申请号：JP7262894
申请日：1994-03-17
申请人： TOKYO ELECTRON LTD
发明人： KITAYAMA HIROBUMI
IPC分类号： H01L21/22 , H01L21/31 , H01L21/324
摘要： PURPOSE:To prevent particles from occurring a member in contact with in- reactor atmosphere, a jig, etc., and also, elongate a maintenance cycle when forming a nitride film on the surface of a processed substance by a heat treatment device. CONSTITUTION:In a heat treatment device being so constituted as to form a nitride film at specified decompressed pressure and in high-temperature atmosphere on a wafer W being loaded in a reactor 3 as it is mounted on a wafer boat 10, a material having the same thermal expansion coefficient as the nitride film on the surface of the wafer W is used for the materials constituting the reactor 3 and the wafer boat 10. Since the thermal expansion coefficient is closely akin to it, cracks do not occur in the nitride film stacked on the thermal reactor 3 and the wafer 10.

30. 发明专利

JPH07161655A SOAKING TUBE FOR HEAT-TREATING DEVICE 失效
公开(公告)号：JPH07161655A
公开(公告)日：1995-06-23
申请号：JP32983093
申请日：1993-12-01
申请人： TOKYO ELECTRON LTD
发明人： KITAYAMA HIROBUMI
IPC分类号： H01L21/22
摘要： PURPOSE:To prevent contamination, which is generated at a region where heating units exist, from infiltrating into a heat-treating region where matters to be treated exist. CONSTITUTION:A soaking tube 31 is made to interpose between a reaction tube 41 to be loaded with wafers W, which are matters to be treated, and heating units 6 for creating a heat-treating atmosphere. The tube 31 itself is constituted of SiC and moreover, an Sic film is formed on the surface of the tube 31 by a CVD coating of a film thickness of 50 to 100mum. Thereby, as the purity of the surface of the tube 31 is increased and the transmitivity of the whole soaking tube is reduced, infiltration of contamination is prevented and moreover, contamination is never generated from the soaking tube itself.

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