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1. 发明专利

JP2007027490A Gas treatment equipment 有权
标题翻译：气体处理设备
公开(公告)号：JP2007027490A
公开(公告)日：2007-02-01
申请号：JP2005208760
申请日：2005-07-19
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： MATSUSHIMA NORIAKI , TAKAHASHI TAKESHI
IPC分类号： H01L21/31 , C23C16/455
CPC分类号： C23C16/45565 , C23C16/401 , C23C16/45574 , H01L21/31608 , H01L21/31645 , H01L21/67109
摘要： PROBLEM TO BE SOLVED: To effectively suppress the temperature rise of a gas discharging mechanism such as a shower head, and to reduce the defectiveness and unevenness of a treatment resulting from the temperature rise of the gas discharging mechanism.
SOLUTION: A film formation device 100 has: a chamber 1 housing a wafer; and a base being arranged in the chamber 1 and having a placed wafer. The film formation device 100 further has: the shower head 4 being fitted at a place opposed to the base and discharging a treating gas into the chamber 1; and an exhausting mechanism exhausting the inside of the chamber 1. The shower head 4 has: a central section 46 with a large number of formed gas discharge openings 45a and 45b for discharging the treating gas; and an outer periphery 47 being positioned on the outer peripheral side of the central section 46 and having no gas discharge openings 45a and 45b. The film formation device 100 further has a heat-dissipating mechanism dissipating the heat of the shower head 4 from the whole periphery of the outer periphery 47 to the atmospheric air side.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：解决的问题：有效地抑制喷淋头等气体排出机构的温度上升，并且降低由气体排出机构的温度升高引起的处理的缺陷和不均匀性。解决方案：成膜装置100具有：容纳晶片的室1; 并且基座布置在腔室1中并具有放置的晶片。成膜装置100还具有：喷淋头4嵌合在与基部相对的位置并将处理气体排出到室1中; 以及排出室1的内部的排气机构。喷淋头4具有：具有大量用于排出处理气体的形成气体排出口45a和45b的中心部分46; 外周47位于中央部46的外周侧，没有排气口45a，45b。成膜装置100还具有散热机构，其将淋浴头4的热量从外周47的整个周边向大气压侧散发。版权所有（C）2007，JPO＆INPIT

2. 发明专利

JP2001044185A EXHAUST SYSTEM FOR PROCESSOR 失效
公开(公告)号：JP2001044185A
公开(公告)日：2001-02-16
申请号：JP21287399
申请日：1999-07-27
申请人： TOKYO ELECTRON LTD
发明人： OKASE WATARU , MATSUSHIMA NORIAKI , TSUKADA AKIHIKO , HIROE AKIHIKO , SHIMOMURA KOJI
IPC分类号： H01L21/302 , B08B7/00 , C23C16/44 , H01L21/3065 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To provide an exhaust system for a processor which can obviate need for exposing the inside of a rap mechanism to air at maintenance or the like. SOLUTION: An exhaust system for a processor, which applies a prescribed treatment to substance W to be treated by a treatment gas, is equipped with a vacuum exhaust passage 40 which is connected to the processor and has a vacuum pump 42 interposed in the middle, a trapping mechanism 52 which is provided capably of mounting and removal via connection flanges 78 and 86 upstream of the vacuum pump and removes reaction products flowing down within the vacuum exhaust passage, opening and closing valves 80 and 88 for isolation, which are provided on the inlet side and outlet side of the trap mechanism and put the interior of the trap mechanism in sealed condition as needed, and a bypass passage 54 which lets cleaning gas flow, bypassing the trap mechanism at the time of cleaning of the processor. Hereby, it becomes possible to perform maintenance work without exposing the inside of the trap mechanism to air.

3. 发明专利

JPH07302767A VERTICAL HEAT TREATMENT DEVICE 失效
公开(公告)号：JPH07302767A
公开(公告)日：1995-11-14
申请号：JP11768894
申请日：1994-05-06
申请人： TOKYO ELECTRON LTD
发明人： KITAYAMA HIROBUMI , MATSUSHIMA NORIAKI
IPC分类号： H01L21/22 , H01L21/205 , H01L21/31
摘要： PURPOSE:To improve the maintenability such as cleaning, etc., of the inner vessel of a reaction vessel while avoiding the pollution of workpiece as well as equalizing the processing gas flow for increasing the production yield. CONSTITUTION:The title vertical heat treatment device is composed of a reaction vessel 1 arranged in a heater 5, a bottomed cylindrical outer vessel 2 having lower aperture part, another bottomed cylindrical inner vessel 3 having lower aperture part detachably arranged for containing wafers W through the intermediary of a seal mechanism in the outer vessel 2, besides, a plurality of treatment gas communicating holes 20 in the circumferential direction on the upper part of the inner vessel 3. Through these procedures, the processing gas fed from the leading-in port 11 provided on the lower part of the inner vessel 3 into the inner vessel 3 is dispersed into the treatment gas communicating holes 20 to be externally exhausted from an exhaust port 13 provided on the lower part of the outer vessel 2 through the intermediary of the space between the outer and inner vessels 2 and 3, thereby enabling treatment gas flow to be equalized.

4. 发明专利

JP2004221155A Removal method of oxide film, its heating method, and its processing apparatus 审中-公开
公开(公告)号：JP2004221155A
公开(公告)日：2004-08-05
申请号：JP2003003936
申请日：2003-01-10
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： MATSUSHIMA NORIAKI
IPC分类号： H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a processing method and a processing apparatus capable of processing with a single apparatus construction and of an improvement of processing efficiency in a processing for removing an oxide film formed on the surface of an object to be processed. SOLUTION: The removal method of the oxide film comprises a film production process for forming a product film by reacting an active gas species with the object in order to remove the oxide film formed on the object W, and a film removal process for removing the product film by heating the same thereafter. In the method, there is prepared movable heating means 32 for heating the product film. In the film production process, the heating means 32 is disposed at a refuge position separated away from the object W so as not to obstruct the reaction between the active gas species and the oxide film. In the film removal process, the heating means 32 is disposed at the heating position close to the object W. COPYRIGHT: (C)2004,JPO&NCIPI

5. 发明专利

JP2002217178A EQUIPMENT AND METHOD OF PROCESSING 失效
公开(公告)号：JP2002217178A
公开(公告)日：2002-08-02
申请号：JP2001014348
申请日：2001-01-23
申请人： TOKYO ELECTRON LTD
发明人： KITAYAMA HIROBUMI , MATSUSHIMA NORIAKI
IPC分类号： C23C16/46 , B44C1/22 , C03C15/00 , C23C16/511 , C23F1/00 , C30B31/14 , C30B31/16 , H01L21/00 , H01L21/28 , H01L21/302 , H01L21/306 , H01L21/3065 , H01L21/324 , H01L21/768
摘要： PROBLEM TO BE SOLVED: To provide an equipment of processing, with which a low temperature processing and a high temperature processing can be carried out in one container of processing and temperature-fall operation which usually require longer time compared to warming operation can be carrying out rapidly. SOLUTION: The equipment of processing has a container of processing 24 which can be evacuated of air, a process gas supplying means 148 which feeds required processing gas into the processing container, and a mounting stand 40 for mounting a processing body W to be processed. A heat transfer medium channel 50 for running the heat transfer medium to the mounting stand is formed. The heat medium path is constructed as to be connected to a heat transfer medium selection feed mechanism 54 which selectively feeds a medium for cooling for carrying out low temperature processing and heating medium for heating for carrying out high temperature processing. Thus, the low temperature processing and the high temperature processing can be carried out in one processing container and the temperature-fall operation which usually requires long time compared to that of the warming operation can be carried out rapidly.

6. 发明专利

JPH1151731A FLOW RATE MEASURING INSTRUMENT WITH REVERSE FLOW PREVENTING FUNCTION AND FLOW RATE CONTROLLER WITH REVERSE FLOW PREVENTING FUNCTION 失效
公开(公告)号：JPH1151731A
公开(公告)日：1999-02-26
申请号：JP22735397
申请日：1997-08-08
申请人： TOKYO ELECTRON LTD
发明人： MATSUSHIMA NORIAKI
IPC分类号： G01F1/00 , G01F1/48 , G01F1/68 , G01F1/684 , H01L21/205 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To eliminate the setting space of a check valve, and contrive the space saving of a gas unit by providing the check valve preventing the reverse flow of gas in the body of a flow rate measuring instrument. SOLUTION: A valve chamber 11 coaxial with a gas passage is formed in the downstream side of the laminar flow bypass part 8 of the body 1a of a flow rate measuring instrument 1, body 15 in a ground 13 fitted in a valve chamber 11 is slid, and gas is passed to the side of an outlet 5 through a gas passing hole 14. In addition, a coil spring 18 urged in the direction (valve opening direction) of seating the valve body 15 on a seat packing 12 in opposite to the flow direction of gas is provided. When the check valve 10 is constituted in the above constitution, gas is flowed to the side of the outlet 5 through a gas passage hole 14 by pushing the valve body 15 in the direction (valve opening direction) being from the packing 12 in opposition to the coil spring 18 by gas pressure. When gas is reversely flowed from the side of the outlet 5, the valve body 15 is seated on the packing 18 by force of the spring 18 to prevent reverse flow.

7. 发明专利

JP2009076567A Heat treatment apparatus 有权
标题翻译：热处理设备
公开(公告)号：JP2009076567A
公开(公告)日：2009-04-09
申请号：JP2007242428
申请日：2007-09-19
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： MATSUSHIMA NORIAKI , YANAGIYA KENICHI
IPC分类号： H01L21/205 , C23C16/455 , H01L21/22 , H01L21/26
摘要： PROBLEM TO BE SOLVED: To provide a heat treatment apparatus capable of making in-surface temperature uniformity of a placement table better.
SOLUTION: The heat treatment apparatus comprises a chamber 2 which has a base portion 2a and stores a substrate W to be treated, a heating means 3 of heating the substrate W to be treated, a cylindrical support member 4 having a support surface 4e and a purge gas discharge portion 4d discharging purge gas at an upper-end portion on the opposite side from the base portion 2a, the placement table 5 which has an edge portion and has the edge portion disposed on the support 4e, and is mounted with the substrate W to be treated, and a press member 6 which has a press surface 6 and presses the edge portion of the placement table 5 by opposing the press surface 6a to the support surface 4e and clamping the edge portion of the placement table 5 between the support surface 4e and press surface 6a, wherein the purge gas discharge portion 4d is formed apart from the edge portion of the placement table 5.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够更好地使放置台的表面温度均匀性的热处理装置。解决方案：热处理设备包括具有基部2a并存储待处理的基板W的室2，加热要处理的基板W的加热装置3，具有支撑表面的圆柱形支撑构件4 4e和吹扫气体排出部4d，其在与基部2a相反的一侧的上端部排出吹扫气体，该放置台5具有边缘部分，并且具有设置在支撑件4e上的边缘部分，并且安装与要处理的基板W以及具有加压表面6并且将加压表面6a相对于支撑表面4e并将夹持台座5的边缘部分夹紧的放置台5的边缘部分的按压部件6 在支撑表面4e和压制表面6a之间，其中吹扫气体排出部分4d与放置台5的边缘部分分开。版权所有：（C）2009，JPO＆INPIT

8. 发明专利

JP2002093787A TREATMENT APPARATUS AND TREATING SYSTEM 失效
公开(公告)号：JP2002093787A
公开(公告)日：2002-03-29
申请号：JP2000284094
申请日：2000-09-19
申请人： TOKYO ELECTRON LTD
发明人： IKEDA KYOKO , KOBAYASHI YASUO , MATSUSHIMA NORIAKI
IPC分类号： H01L21/302 , H01L21/00 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a treatment apparatus capable of realizing a uniform distribution of NF3 gas on a body to be treated within a treating container, and to provide a treating system. SOLUTION: This treatment apparatus 51 is constituted by a structure that the treatment apparatus 51 is provided with a treating container 53 with a wafer W arranged in its interior, an active gas species feed opening 79 for feeding activated N2 and H2 gases inside the container 53 and nozzles 105 for feeding NF3 gas which is activated by these activated N2 and H2 gases and the NF3 gas is made to activate by the N2 and H2 gases and the wafer W is treated using the activated NF3 gas. In this treater 51, the feed opening 79 and the nozzles 105 are provided in a ceiling plate 71 of the container 53.

9. 发明专利

JPH1154492A PROCESSING GAS SUPPLY DEVICE 失效
公开(公告)号：JPH1154492A
公开(公告)日：1999-02-26
申请号：JP22006997
申请日：1997-07-31
申请人： TOKYO ELECTRON LTD
发明人： MATSUSHIMA NORIAKI , OHARA SAKAE
IPC分类号： H01L21/205 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To realize common use of a flow instrument and realize reduction in space and cost, by providing a common flow instrument for measuring the rate of flow for each gas line, upstream from a flow controller. SOLUTION: A processing gas supply device 20 has a plurality of gas lines 21 to 24 for supplying various kinds of processing gas and inert gas to a reaction tube of a processing furnace, and flow controllers 41 to 46 for controlling the rate of flow for the respective gas lines 21 to 24. Upstream from the flow controllers 41 to 46, a common flow instrument 50 for measuring the rate of flow for the respective gas line 21 to 24 is arranged. A control unit 25 for storing an initial value of the rate of flow of each of the gas lines 21 to 24 measured by the flow instrument 50, and comparing a value of the rate of flow measured after the use of a predetermined period and the initial value of the rate of flow so as to detect any abnormality, is arranged. Thus, common use of the flow instrument 50 can be realized and the space and cost can be reduced.

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