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1. 发明专利

JPH07283159A HEAT TREATMENT DEVICE 失效
公开(公告)号：JPH07283159A
公开(公告)日：1995-10-27
申请号：JP9812994
申请日：1994-04-11
申请人： TOKYO ELECTRON LTD
发明人： KITAYAMA HIROBUMI , SHIBATA TOSHIMITSU , MIYAHISA TOSHIAKI
IPC分类号： H01L21/22 , H01L21/205 , H01L21/31 , H01L21/324
摘要： PURPOSE:To provide a heat treatment device which is improved in thermal responsibility by a method wherein a temperature sensor is provided to a spot which is located adjacent to a work inside the device and large in thermal capacity and where a reaction product attaches. CONSTITUTION:A work W is thermally treated in a heat treatment device 38 through such a manner that the work W is placed on a processing boat 10 provided onto a heat insulating cylinder 21, introduced into an insulating cylinder 21, and subjected to a heat treatment, wherein a temperature sensor 46 is provided to a film forming area 44 which is comparatively large in thermal capacity and located in a lower part of a gap 54 between an inner tube 4 and the heat insulating cylinder 21. By this setup, a heat treatment device of this constitution can be enhanced in thermal responsibility and accurately detected in temperature.

2. 发明专利

JPH10223538A VERTICAL HEAT-TREATING APPARATUS 失效
公开(公告)号：JPH10223538A
公开(公告)日：1998-08-21
申请号：JP3996597
申请日：1997-02-07
申请人： TOKYO ELECTRON LTD
发明人： SHIBATA TOSHIMITSU
IPC分类号： H01L21/205
摘要： PROBLEM TO BE SOLVED: To suppress the particle from growing during formation of, e.g. a thin film by CVD on the surface of a semiconductor wafer, using a vertical heat-treating apparatus. SOLUTION: Using a vertical single reaction tube 2 which is open at a lower end, an injector 42 for feeding a treating gas and exhaust pipe 44 are connected to a manifold attached to the lower end of this tube 2. A tubular member 61 is provided to cover the inner surface of a manifold 4 through a space and surround a lifting region of a wafer boat 5. Rings 62a, 62b are attached to the upper and lower edges of the tubular member 61 and have exhaust holes 63 to form a cover 6, having an exhaust space S with the inner wall of the manifold 4 for exhausting gaseous reaction products from the reaction tube 2, through the exhaust holes 63 and a space S. The reaction products condense in this space S and are confined therein, to suppress the particle from growing.

3. 发明专利

JPH08115883A FILM FORMING APPARATUS 失效
公开(公告)号：JPH08115883A
公开(公告)日：1996-05-07
申请号：JP27440094
申请日：1994-10-12
申请人： TOKYO ELECTRON LTD
发明人： SHIBATA TOSHIMITSU , MIYAHISA TOSHIAKI , KOBAYASHI MAKOTO
IPC分类号： C23C16/44 , H01L21/205
摘要： PURPOSE: To ensure a good thickness uniformity of a polycrystalline Si film on the surface of a work, without rotating the work, using a vertical furnace. CONSTITUTION: Wafers W are mounted one above another on a wafer boat 10, it is loaded in a reaction tube 3 positioned in a tubular furnace 2 of a film forming apparatus and treating gas is fed into this tube from the nozzle 41 of a first gas feed pipe 41. Blow hole 41b of the nozzle 41a is set as follows: In the horizontal direction, it locates near the outside of the lowermost part of the boat 10 wherein a wafer W0 is mounted and to be treated at the lowest in-plane temp. and in the vertical direction, it locates about 50-150mm below from the wafer W0. A flow of the fresh treating gas just blown from the blow hole 41b is formed at the low temp. part to accelerate the film forming reaction enough to compensate the film for an originally possible poor growth of its thickness, thereby improving the uniformity of the film thickness.

4. 发明专利

JPH076956A HEAT TREATING DEVICE 失效
公开(公告)号：JPH076956A
公开(公告)日：1995-01-10
申请号：JP16747393
申请日：1993-06-14
申请人： TOKYO ELECTRON LTD
发明人： SHIBATA TOSHIMITSU , MIYAHISA TOSHIAKI , KANEDA NAOYA
IPC分类号： H01L21/205 , C23C16/455 , H01L21/22
摘要： PURPOSE:To provide a heat treating device capable of maintaining high uniformity in the thickness of a formed film without turning a material housing boat by a method wherein a treatment gas introducing function is given to a heat- insulative heat insulating cylinder. CONSTITUTION:A heat treating device is provided with a treating container 8, which feeds treatment gas to materials W housed in a material housing boat to perform a heat treatment, a treatment gas introducing nozzle 50 for introducing the treatment gas, a cap part 20 for sealing an opening part in the container 8 in such a way as to be able to open and shut and a heat insulative heat insulating cylinder 54 for placing the boat thereon and a gas introducing port 62, a gas continuity path and gas exhaust vents are formed in this cylinder 54. The treatment gas introduced through the nozzle 50 is taken from the port 62 in the cylinder 54 and is radially exhausted through the gas exhaust vents in the upper part of the cylinder 54. Thereby, the uniformity of a formed film is secured without turning the boat.

5. 发明专利

JPH1032170A FILM FORMATION PROCESSOR 失效
公开(公告)号：JPH1032170A
公开(公告)日：1998-02-03
申请号：JP20325296
申请日：1996-07-12
申请人： TOKYO ELECTRON LTD
发明人： HAGINO ISAO , SHIBATA TOSHIMITSU
IPC分类号： C23C16/44 , C23C16/46 , H01L21/205 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To provide a film formation process, capable of rapidly stabilizing the temperature of a processed body, even if a formed film adheres to an un wanted part. SOLUTION: A formation processor provided with a processing vessel 6 with one end side opened, a supporting board 14 loaded with a plurality of processes wafers W and freely putting in and out of the processing vessel 6 from the opened side of the vessel 6, as well as a heating means 8 concentrically arranged outside the processing vessel is composed to provide a heated area expanding rugged part 50, for increasing the heated area on the wall surface of the processing vessel 6. Through these procedures, the heated surface is increased to increase the radiation detection amount, thereby efficiently raising the temperature of the processed wafers.

6. 发明专利

JPH09148315A THERMAL TREATMENT APPARATUS AND TREATMENT APPARATUS 失效
公开(公告)号：JPH09148315A
公开(公告)日：1997-06-06
申请号：JP32500895
申请日：1995-11-20
申请人： TOKYO ELECTRON LTD
发明人： ISHIKAWA KENJI , USHIGAWA HARUNORI , SHIBATA TOSHIMITSU
IPC分类号： C23C16/44 , C23C16/455 , F27D7/02 , F27D7/06 , H01L21/205 , H01L21/22 , H01L21/31 , H01L21/324
摘要： PROBLEM TO BE SOLVED: To increase heat insulation efficiency between thermal treatment area and furnace opening vertical thermal treatment apparatus for batch processing of semiconductor wafers. SOLUTION: A heat insulating base 3 for mounting a wafer board 17 is constituted by several reflectors 41 spaced as a shelf undt a circular quartz heater 31. A heat-producing surface of the quartz heater 31 is formed by coating a paste of platinum mixed with PbO and SiO and further with organic substances by screen printing on a surface of a joining transparent quartz plate. Another transparent quartz plate is mounted on the quartz plate by the periphery of each plate to, for example cover the heat-producing surface of the quarts heater 31. The reflector 41 is constituted in the same way except that the reflector is not supplied with electricity to the reflecting surface by a feeding wire. The feeding wire 35 is arranged in a quartz tube 34 in the center and connected to the outside wiring through a lower terminal.

7. 发明专利

JPH0745546A HEAT TREATMENT DEVICE 失效
公开(公告)号：JPH0745546A
公开(公告)日：1995-02-14
申请号：JP20706893
申请日：1993-07-29
申请人： TOKYO ELECTRON LTD
发明人： KITAYAMA HIROBUMI , SHIBATA TOSHIMITSU , MIYAHISA TOSHIAKI
IPC分类号： H01L21/22 , H01L21/205 , H01L21/324
摘要： PURPOSE:To enhance the thermal responsibility of the title heat treatment device by a method wherein a temperature detecting sensor is arranged near treated bodies but on the part whereto no reaction product adheres at all. CONSTITUTION:Within the title heat treatment device 38 wherein treated bodies W is mounted on a treated body boat 10 mounted on a heat retaining cylinder 21 so as to be led into a treating vessel 8 for the heat treatment, a temperature detecting sensor 46 is arranged on an area 44 whereto a formed film hardly adheres e.g. an interval part 54 between an inner tube 4 and the heat retaining cylinder 21. Through these procedures, the thermal responsibility of the title heat treatment device can be enhanced thereby enabling the temperature detection to be performed precisely.

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