专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

21. 发明专利

JP2013074001A Light-emitting element and manufacturing method of the same 有权
标题翻译：发光元件及其制造方法
公开(公告)号：JP2013074001A
公开(公告)日：2013-04-22
申请号：JP2011210354
申请日：2011-09-27
申请人： Sony Corp , ソニー株式会社
发明人： KURAMOTO MASARU , KODA RINTARO , WATANABE HIDEKI
IPC分类号： H01S5/223
CPC分类号： H01S5/22 , B82Y20/00 , H01S5/141 , H01S5/2009 , H01S5/2031 , H01S5/209 , H01S5/305 , H01S5/3063 , H01S5/309 , H01S5/3211 , H01S5/3213 , H01S5/34333 , H01S5/50 , H01S2301/166 , H01S2301/176
摘要： PROBLEM TO BE SOLVED: To provide a light-emitting element having a high output, which can radiate light beams having a single mode.SOLUTION: The light-emitting element comprises: (a) a laminated structure 20 including a first compound semiconductor layer 21, an active layer 23 and a second compound semiconductor layer 22 sequentially laminated on a base substance 20'; (b) a second electrode 32; and (c) a first electrode 31. The first compound semiconductor layer 21 has a lamination structure of a first clad layer 121A and a first optical guide layer 121B laminated from a base substance side. The laminated structure has a ridge stripe structure 20A including a part 121B' in a thickness direction of the second compound semiconductor layer 22, the active layer 23 and the first optical guide layer. When assuming that a thickness of the first optical guide layer 121B is tand a thickness of the part 121B of the first optical guide layer, which is included in the ridge stripe structure 20A is t', the following relational expressions are satisfied: 6×10m
摘要翻译：要解决的问题：提供具有高输出的发光元件，其可以辐射具有单一模式的光束。解决方案：发光元件包括：（a）包括依次层压在基体20'上的第一化合物半导体层21，有源层23和第二化合物半导体层22的层叠结构20; （b）第二电极32; 和（c）第一电极31.第一化合物半导体层21具有从基体侧层叠的第一包层121A和第一导光层121B的层叠结构。层叠结构具有在第二化合物半导体层22的厚度方向上具有部分121B'的脊条状结构20A，有源层23和第一导光层。当假设第一光导层121B的厚度为t 1 时，包括在脊条结构20A中的第一导光层的部分121B的厚度是t 1 '，满足以下关系式：6×10 - 7 m 1 ，0（m） 1 '≤0.5* t 1 。版权所有（C）2013，JPO＆INPIT

22. 发明专利

JP2012195475A Semiconductor laser element assembly and method of driving the same 有权
标题翻译：半导体激光元件组件及其驱动方法
公开(公告)号：JP2012195475A
公开(公告)日：2012-10-11
申请号：JP2011058899
申请日：2011-03-17
申请人： Sony Corp , Tohoku Univ , ソニー株式会社 , 国立大学法人東北大学
发明人： OKI TOMOYUKI , KURAMOTO MASARU , KODA RINTARO , WATANABE HIDEKI , YOKOYAMA HIROYUKI
IPC分类号： H01S5/065
CPC分类号： H01S5/0602 , B82Y20/00 , H01S5/0425 , H01S5/0625 , H01S5/1064 , H01S5/3063 , H01S5/34333 , H01S2301/166
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor laser element assembly that can emit laser light with high power.SOLUTION: A semiconductor laser element assembly comprises a semiconductor laser element 10 and a light reflection device 70. A stacked structure constituting the semiconductor laser element 10 has a ridge stripe structure 56. Laser light is emitted from one edge face 57A of the ridge stripe structure 56, a part of the laser light is reflected by the light reflection device 70 and is returned to the semiconductor laser element 10, and the rest of the laser light is emitted from the light reflection device to the outside. In addition, the laser light is reflected at the other edge face 57B of the ridge stripe structure 56. When the minimum width of the ridge stripe structure is Wand the maximum width of the ridge stripe structure is W, the following relation is satisfied: 1
摘要翻译：要解决的问题：提供能够以高功率发射激光的半导体激光元件组件。解决方案：半导体激光元件组件包括半导体激光元件10和光反射装置70.构成半导体激光元件10的堆叠结构具有脊状条纹结构56.激光从一个边缘面57A发射脊条纹结构56，一部分激光被光反射装置70反射并返回到半导体激光元件10，其余的激光从光反射装置发射到外部。此外，激光在脊条结构56的另一边缘面57B处被反射。当脊条纹结构的最小宽度为W min 时，最大宽度脊条纹结构为W max ，满足以下关系：1 max / W min <3.3或6≤W max / W min ≤13.3。版权所有（C）2013，JPO＆INPIT

23. 发明专利

JP2012089776A Semiconductor laser device assembly 有权
标题翻译：半导体激光器件组件
公开(公告)号：JP2012089776A
公开(公告)日：2012-05-10
申请号：JP2010237094
申请日：2010-10-22
申请人： Sony Corp , Tohoku Univ , ソニー株式会社 , 国立大学法人東北大学
发明人： KONO SHUNSUKE , YOKOYAMA HIROYUKI , KURAMOTO MASARU , OKI TOMOYUKI
IPC分类号： H01S5/065
CPC分类号： H01S5/0657 , B82Y20/00 , H01S5/0287 , H01S5/141 , H01S5/3063 , H01S5/3202 , H01S5/3216 , H01S5/34333
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor laser device assembly capable of suppressing occurrence of a problem of a mode synchronous operation becoming instable and capable of obtaining a large output.SOLUTION: The semiconductor laser device assembly comprises: (A) a mode synchronous semiconductor laser element 10; (B) an external resonator; a diffraction grating 100 to return diffraction light of the first or higher order to the mode synchronous semiconductor laser element 10 and output 0-order diffraction light to the outside; and imaging means 101 between the mode synchronous semiconductor laser element 10 and the diffraction grating 100 to image an image of a light emission end face of the mode synchronous semiconductor laser element 10 on the diffraction grating.
摘要翻译：要解决的问题：提供能够抑制模式同步操作变得不稳定并且能够获得大输出的问题的发生的半导体激光装置组件。解决方案：半导体激光器件组件包括：（A）模式同步半导体激光器元件10; （B）外部谐振器; 衍射光栅100，将第一或更高阶的衍射光返回到模式同步半导体激光元件10，并将0级衍射光输出到外部; 以及模式同步半导体激光元件10与衍射光栅100之间的成像装置101，以将衍射光栅上的模式同步半导体激光元件10的发光端面的图像成像。版权所有（C）2012，JPO＆INPIT

24. 发明专利

JP2011187580A Self-oscillation type semiconductor laser element and driving method of the same 审中-公开
标题翻译：自激振荡型半导体激光元件及其驱动方法
公开(公告)号：JP2011187580A
公开(公告)日：2011-09-22
申请号：JP2010049750
申请日：2010-03-05
申请人： Sony Corp , Tohoku Univ , ソニー株式会社 , 国立大学法人東北大学
发明人： WATANABE HIDEKI , KURAMOTO MASARU , MIYAJIMA TAKAO , YOKOYAMA HIROYUKI
IPC分类号： H01S5/065
CPC分类号： H01S5/3407 , H01S5/0601 , H01S5/30 , H01S5/343
摘要： PROBLEM TO BE SOLVED: To provide a driving method of a self-oscillation type semiconductor laser element for making a generated optical pulse shorter and peak output higher without causing a trouble such as heat generation and deterioration. SOLUTION: The self-oscillation type semiconductor laser element is equipped with: a laminated structure obtained by sequentially laminating a first compound semiconductor layer formed of a GaN-based compound semiconductor, a third compound semiconductor layer constituting a light emitting region and a saturable absorption region and a second compound semiconductor; a second electrode formed on the second compound semiconductor layer; and a first electrode which is electrically connected to the first compound semiconductor layer. The second electrode is isolated into: a first part for making a forward bias state by making current flow to the first electrode via the light emitting region; and a second part for applying an electric field to the saturable absorption region by an isolation groove. In the driving method of the self-oscillation type semiconductor laser element, current having a current value in which kink occurs or above in optical output-current characteristic, is made to flow to the first part of the second electrode. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种使自发振荡型半导体激光元件的驱动方法，使得产生的光脉冲更短，并且峰值输出更高，而不会引起诸如发热和劣化的故障。解决方案：自激振荡型半导体激光元件配备有：通过顺序层叠由GaN基化合物半导体形成的第一化合物半导体层，构成发光区域的第三化合物半导体层和饱和吸收区和第二化合物半导体; 形成在第二化合物半导体层上的第二电极; 以及与第一化合物半导体层电连接的第一电极。第二电极被隔离成：通过使电流通过发光区域流向第一电极而产生正向偏置状态的第一部分; 以及第二部分，用于通过隔离槽将电场施加到可饱和吸收区域。在自激振荡型半导体激光元件的驱动方法中，使具有光输出电流特性中发生或更高的扭结的电流值的电流流向第二电极的第一部分。版权所有（C）2011，JPO＆INPIT

25. 发明专利

JP2011164900A Green power generating device, portable equipment, electric storage apparatus, and method for managing green power information 审中-公开
标题翻译：绿色发电装置，便携式设备，电力储存装置及绿色电力信息管理方法
公开(公告)号：JP2011164900A
公开(公告)日：2011-08-25
申请号：JP2010026563
申请日：2010-02-09
申请人： Sony Corp , ソニー株式会社
发明人： WAKITA YOSHIHIRO , NAKANO ATSUSHI , KURAMOTO MASARU , IMAI YUTAKA
IPC分类号： G06Q50/00 , G06Q50/06 , G06Q50/10 , G06Q50/26 , H02J3/00
CPC分类号： G06Q50/06 , G06Q30/04 , H02J3/008 , H02J3/382 , H02J3/383 , H02J3/386 , H02J7/35 , H04L63/0823 , Y02E10/563 , Y02E10/566 , Y02E10/763 , Y04S10/60 , Y04S40/24 , Y04S50/10 , Y04S50/12
摘要： PROBLEM TO BE SOLVED: To provide a scheme for proving that power is acquired by green power generation. SOLUTION: A green power generating device includes a green power generating part for generating power through the use of renewable energy or a low environmental load power generation resource, a power generation amount measuring part for measuring the amount of power generation performed by the green power generating part, an information obtaining part for obtaining power generation amount information indicating the amount of power generation measured by the power generation amount measuring part, and a power generation certificate issuing part for issuing a power generation certificate to certify the validity of power generation amount information obtained by the information obtaining part. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种证明通过绿色发电获得电力的方案。解决方案：绿色发电装置包括通过使用可再生能源或低环境负荷发电资源发电的绿色发电部，发电量测量部，用于测量由绿色发电部，用于获取表示由发电量测量部测量的发电量的发电量信息的信息获取部，以及用于发行发电证以证明发电有效性的发电证书发行部由信息获取部获得的量信息。版权所有（C）2011，JPO＆INPIT

26. 发明专利

JP2010260029A Gas generating material and gas generating apparatus 审中-公开
标题翻译：气体发生材料和气体发生装置
公开(公告)号：JP2010260029A
公开(公告)日：2010-11-18
申请号：JP2009114810
申请日：2009-05-11
申请人： Sony Corp , ソニー株式会社
发明人： KURAMOTO MASARU
IPC分类号： B01J7/02 , C23C14/08 , C23C16/34
摘要： PROBLEM TO BE SOLVED: To provide a gas generating material the structure of which is simple, which has such a constitution/structure that problems such as corrosion are hardly caused and from which hydrogen gas and oxygen gas can be efficiently generated.
SOLUTION: The gas generating material 120 is obtained by layering a first semiconductor material layer 21 containing p-type impurities and a second semiconductor material layer 22 containing n-type impurities on each other. A valence band in the first semiconductor material layer 21 and a conduction band in the second semiconductor material layer 22 have an energetically-coincident heterojunction to generate different gasses from the respective surfaces of the first and second semiconductor material layers 21 and 22.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种结构简单的气体发生材料，其具有难以产生诸如腐蚀等问题的结构/结构，并且可以有效地产生氢气和氧气。解决方案：气体发生材料120通过层叠包含p型杂质的第一半导体材料层21和含有n型杂质的第二半导体材料层22而获得。第一半导体材料层21中的价带和第二半导体材料层22中的导带具有能量一致的异质结，以从第一和第二半导体材料层21和22的各个表面产生不同的气体。版权所有（C）2011，JPO＆INPIT

27. 发明专利

JP2010098070A Edge light emitting semiconductor laser element and method for manufacturing the same 审中-公开
标题翻译：边缘发光半导体激光元件及其制造方法
公开(公告)号：JP2010098070A
公开(公告)日：2010-04-30
申请号：JP2008266728
申请日：2008-10-15
申请人： Sony Corp , ソニー株式会社
发明人： OBATA TOSHIYUKI , KURAMOTO MASARU
IPC分类号： H01S5/343 , H01L21/205
摘要： PROBLEM TO BE SOLVED: To provide an edge light emitting semiconductor laser element having a configuration and a structure capable of surely suppressing the generation of ripples in a laser beam. SOLUTION: The edge light emitting semiconductor laser element includes: (A) a base layer 112 comprising a compound semiconductor layer including In (indium); and (B) a light emitting part 20 comprising a laminated structure formed by successively laminating an n-type compound semiconductor layer 21, an active layer 23 and a p-type compound semiconductor layer 22 on the base layer 112. In the base layer 112, In is segregated. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供具有能够可靠地抑制激光束中的波纹的产生的结构和结构的边缘发光半导体激光元件。边缘发光半导体激光元件包括：（A）包含In（铟）的化合物半导体层的基底层112。和（B）发光部20，其包括通过在基底层112上依次层叠n型化合物半导体层21，有源层23和p型化合物半导体层22而形成的层叠结构。在基极层112 ，In被隔离。版权所有（C）2010，JPO＆INPIT

28. 发明专利

JP2010010182A Semiconductor light-emitting element 审中-公开
标题翻译：半导体发光元件
公开(公告)号：JP2010010182A
公开(公告)日：2010-01-14
申请号：JP2008164335
申请日：2008-06-24
申请人： Sony Corp , ソニー株式会社
发明人： MAEDA OSAMU , KURAMOTO MASARU
IPC分类号： H01S5/323 , H01L33/32
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element which can reduce the threshold current, without causing crystal defects. SOLUTION: A plurality of semiconductor blocks 30, including an oxide layer 32, are provided on the ridge 25 of a semiconductor layer 20 consisting of a III-V nitride semiconductor. The plurality of semiconductor blocks 30 are jointed to the ridge 25 via an upper electrode 27 and a metal layer 40 and are arranged in the extending direction of the ridge 25. Consequently, a uniaxial compressive strain S (Fig.2) is applied, from the oxide layer 27 to a part of an active layer 22, directly under the ridge 25 in the direction perpendicular to the extending direction of the ridge 25 (i.e., in a direction parallel to the crystal orientation of [11-20]). COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供可以降低阈值电流而不引起晶体缺陷的半导体发光元件。解决方案：包括氧化物层32的多个半导体块30设置在由III-V族氮化物半导体构成的半导体层20的脊25上。多个半导体块30经由上电极27和金属层40接合到脊25，并且沿着脊25的延伸方向布置。因此，应用单轴压缩应变S（图2），从氧化物层27到与脊25的延伸方向垂直的方向（即，在与[11-20]的晶体取向平行的方向上）直接在脊25的下方的活性层22的一部分。版权所有（C）2010，JPO＆INPIT

29. 发明专利

JP2007300016A Semiconductor laser, its manufacturing method, optical pickup, and optical disk equipment 有权
标题翻译：半导体激光器，其制造方法，光学拾取和光盘设备
公开(公告)号：JP2007300016A
公开(公告)日：2007-11-15
申请号：JP2006128193
申请日：2006-05-02
申请人： Sony Corp , ソニー株式会社
发明人： KURAMOTO MASARU
IPC分类号： H01S5/065 , G11B7/125 , H01S5/343
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/065 , H01S5/2009 , H01S5/2022 , H01S5/2081 , H01S5/2231 , H01S5/3216 , H01S2304/04
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor laser capable of easily obtaining a longevity semiconductor laser in which a stable self pulsation action is possible, and a nitride-based group III-V compound semiconductor is used. SOLUTION: An n-type AlGaN cladding layer 2, an active layer 4, a saturable absorption layer 8, a p-type GaN/undope AlGaN super lattice cladding layer 9, a p-type GaN contact layer 10 or the like are grown up on an n-type GaN substrate 1. When grooves 12, 13 are formed to form a ridge stripe 11 by carrying out a dry etching of the p-type GaN/undope AlGaN super lattice cladding layer 9 and the p-type GaN contact layer 10; a distance t 1 is set to 105 nm or more from bottom faces of the grooves 12, 13 to a top face of the active layer 4, and a distance t 2 is set to 100 nm or less from the bottom faces of the grooves 12, 13 to a top face of the saturable absorption layer 8. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种半导体激光器，其能够容易地获得其中可能具有稳定的自脉动作用的寿命半导体激光器，并且使用基于氮化物的III-V族化合物半导体。解决方案：n型AlGaN包覆层2，有源层4，可饱和吸收层8，p型GaN /未掺杂AlGaN超晶格覆盖层9，p型GaN接触层10等在n型GaN衬底1上长大。当通过对p型GaN /未掺杂AlGaN超晶格覆盖层9进行干法蚀刻而形成沟槽12,13以形成脊条11时，p型 GaN接触层10; 距离t 1 从槽12,13的底面到有源层4的顶面设定为105nm以上，距离t SB> 2 为设定为从槽12,13的底面到可饱和吸收层8的顶面的100nm以下。（C）2008，JPO＆INPIT

30. 发明专利

JP2014078753A Mode-lock semiconductor laser element and semiconductor laser device assembly 审中-公开
标题翻译：模式半导体激光元件和半导体激光器件组件
公开(公告)号：JP2014078753A
公开(公告)日：2014-05-01
申请号：JP2014000846
申请日：2014-01-07
申请人： Sony Corp , ソニー株式会社 , Tohoku Univ , 国立大学法人東北大学
发明人： OKI TOMOYUKI , KURAMOTO MASARU , IKEDA MASAO , MIYAJIMA TAKAO , WATANABE HIDEKI , YOKOYAMA HIROYUKI
IPC分类号： H01S5/065 , H01S5/14 , H01S5/343
摘要： PROBLEM TO BE SOLVED: To provide a drive method of a mode-lock semiconductor laser element having a configuration capable of reducing influences of piezo polarization and spontaneous polarization.SOLUTION: The mode-lock semiconductor laser element has a laminate structure which includes: a first compound semiconductor layer 30 of a GaN compound semiconductor; a third compound semiconductor layer 40 having a light emitting region 41 and a saturable absorption region 42; and a second compound semiconductor layer 50 which are laminated in order; and a second electrode 62 and a first electrode 61. The second electrode 62 is separated into a first portion 62A and a second portion 62B by a separation groove 62C. When a current flows from a first portion of the second electrode to a first electrode via the light emitting region, the second electrode 62 gets into a forward bias state; and when a voltage is applied across the first electrode and the second portion of the second electrode, an electric field is applied to a saturable absorption region. Thus, the semiconductor laser element performs a single mode self-pulsation operation in the light emitting region.
摘要翻译：要解决的问题：提供具有能够减少压电极化和自发极化的影响的结构的锁模半导体激光元件的驱动方法。解锁：锁模半导体激光元件具有层叠结构，其包括：第一 GaN化合物半导体的化合物半导体层30; 具有发光区域41和可饱和吸收区域42的第三化合物半导体层40; 和第二化合物半导体层50; 第二电极62和第一电极61.第二电极62通过分离槽62C分离成第一部分62A和第二部分62B。当电流从第二电极的第一部分经由发光区域流过第一电极时，第二电极62进入正向偏压状态; 并且当跨越第一电极和第二电极的第二部分施加电压时，电场被施加到可饱和吸收区域。因此，半导体激光元件在发光区域中进行单模式自脉动操作。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式