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    • 24. 发明专利
    • ANALYSIS OF LIGHT SPECTRUM
    • JPH04204219A
    • 1992-07-24
    • JP33751590
    • 1990-11-30
    • MITSUBISHI ELECTRIC CORP
    • YAGYU EIJINISHIMURA TETSUYAYOSHIMURA MOTOMUTSUKADA NORIAKI
    • G01J3/40
    • PURPOSE:To measure the fast change of light to be measured with high resolving power by recording the light to be measured on an optical recording medium with high resolving power. CONSTITUTION:The intensity of light 1 to be measured is adjusted by a light intensity modulator 2 so that light induced reaction is properly brought about and the light to be measured is deflected by a light deflector 3 so as to be incident on the arbitrary region of an optical recording medium. The light spectrum of the light 1 to be measured during the period when the recording medium is irradiated with the light 1 to be measured at the incident position is recorded on the optical recording medium 4 by light induced reaction. The reproduction of the recorded light spectrum is performed by allowing reading light controlled so as not to newly bring about light induced reaction to be incident on the recording region of the optical recording medium 4 by a light modulator 6. The reading light 5 is modulated by the absorbing characteristics in the recording region to reproduce the recorded light spectrum 1 of the light 1 to be measured.
    • 25. 发明专利
    • OPTICAL ELEMENT APPARATUS
    • JPH03227578A
    • 1991-10-08
    • JP5239390
    • 1990-03-02
    • MITSUBISHI ELECTRIC CORP
    • TOKUDA YASUKITSUKADA NORIAKI
    • G01J1/02G02F1/015G02F1/017G02F3/02H01L31/0352H01L31/10
    • PURPOSE:To obtain an optical element apparatus whose wavelength selectivity is high or wherein photocurrent indicates bistable property for incident optical wavelengths by providing a resistor which is connected between electrodes so that a photocurrent generated by incident light indicates bistable property for the wavelengths of the incident light or indicates the characteristic of abrupt change for the certain wavelength of the incident light withe respect to the resistance value. CONSTITUTION:In this element, a quantum-well light absorbing layer 101 is provided in an I layer having a P-I-N photodiode structure. A voltage is generated in an outer resistor 105 by a photocurrent generated by incident light lambda which is inputted into this element. The resistor 105 is connected to the layer 101 in series. The photocurrent flowing through the resistor indicates bistable property for the wavelengths of the incident light or indicates the characteristic which is abrustly changed for the certain wavelength of the incident light. One end of the outer resistor 105 is connected to an upper-side electrode 107a. For the resistor 105, e.g. a resistor of 20 MOMEGA is used. The negative electrode of a constant-voltage power supply 106 is connected to the upper electrode 107a through the outer resistor 105, and the positive electrode is connected to a lower electrode 107b. For the constant-voltage power supply 106, e.g. a DC power supply of 1 V is used. In this way, the abrupt change and the bistable characteristic of the photocurrent for the wavelengths can be obtained.
    • 26. 发明专利
    • PERMANENT CURRENT SWITCH
    • JPH01102821A
    • 1989-04-20
    • JP26038787
    • 1987-10-15
    • MITSUBISHI ELECTRIC CORP
    • NOGUCHI TAKUTAKAMI TETSUYAOOKAWA KUNIOKOJIMA KAZUYOSHIKANEMOTO KYOZOTSUKADA NORIAKI
    • H01L39/20H01F6/00H01H3/00H01H33/00
    • PURPOSE:To lessen the current for control by allowing a current greater than the critical current to flow in the direction toward smaller critical current density, causing transfer of a superconductor to normal conductive state, and through turning-on and off of this current, shutting or supplying the superconductive current in the direction toward larger critical current density. CONSTITUTION:Crystals of Y-Ba-Cu-O oxide superconductor are used, and a terminal A-B is connected in the direction perpendicular to the C-axis of the crystals. The section area through which the current along C-axis flows is represented by S'' while the section area through which the current perpendicular to the C-axis by S, and the critical current density in the C-axis direction represented by jc''. When current I'' satisfying I''>jc''.S'' is allowed to flow in parallel with C-axis, the Y-Ba-Cu-O oxide superconductor 2 is put into normal conductive state, and the distance between A and B becomes open state. When the current I'' in parallel with C-axis is nullified, the Y-Ba-Cu-O oxide superconductor 2 is put into superconductive state, and the distance between A and B becomes closed state to allow flowing of permanent current. Thus action of a permanent current switch is accomplished. If at this time the section area S'' is kept small, this switch can be driven with a very small current I''.
    • 29. 发明专利
    • SWITCHING ELEMENT
    • JPS63280473A
    • 1988-11-17
    • JP11528187
    • 1987-05-12
    • MITSUBISHI ELECTRIC CORP
    • TSUKADA NORIAKIKOJIMA KAZUYOSHITOKUDA YASUKINARA SHIGETOSHIFUJIWARA KENZO
    • H01L39/22H01L29/80
    • PURPOSE:To enable an output to be controlled by feeble magnetic field signals while enabling a wide gap between two conductive channels to be made by a method wherein current injecting electrodes are composed superconductor. CONSTITUTION:A current flowing in a control wire 23 controls another current flowing between two superconducting electrodes 21a, 21b just like a conventional switching element by the size of a magnetic field induced in a region encircled by conductive channels 3, 5 and the superconducting electrodes 21a, 21b. Coherent injection of electrons into two constantly conductive GaAs quantum well channels are performed using the superconducting electrodes 21a, 21b regardless of the gap (d) between the two conductive channels 3, 5. A switching element with performance capable of switching by feeble magnetic field signals can be produced since the two conductive channels can make a wide gap. Furthermore, the GaAs conductive channels can be produced by MBE growing process capable of controlling single atomic layer so that the junction in excellent reproducibility with high accuracy may be capacitated.
    • 30. 发明专利
    • MULTIPLE-WAVELENGTH LIGHT SOURCE
    • JPS63177494A
    • 1988-07-21
    • JP861887
    • 1987-01-17
    • MITSUBISHI ELECTRIC CORP
    • TSUKADA NORIAKI
    • H01S5/00H01S5/187H01S5/42
    • PURPOSE:To obtain a multiple-wavelength light source which can take out more than one laser beams from an identical region of a substrate by a simple structure and with good directivity by a method wherein the following are formed: more than one laser arranged on an identical substrate in different directions: a diffraction grating body formed in the identical region of the substrate by mutually piling up diffraction gratings corresponding to the lasers. CONSTITUTION:The following are formed: more than one distributed Bragg reflection laser A, B or distributed feedback laser, which is arranged on an identical substrate 1 in different directions; a diffraction grating body 3 which is formed in the identical region of said substrate 1 by mutually piling up diffraction gratings corresponding to said lasers A, B. For example, a beam of light radiated at a multiple-quantum-well layer 6 by injection of an electric current is multiple-reflected at a cleavage plane and at a diffraction grating, and is radiated as a laser beam from the cleavage plane and the diffraction grating. In order to take out one part of the laser beam from the diffraction grating in the vertical direction, the cycle of the diffraction grating is made identical to the wavelength of the laser. That is to say, the laser beam is fed back by a secondary diffraction effect, and, at the same time, one part of the laser beam is taken out by a primary diffraction effect in the vertical direction.