专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JPS63280225A OPTICAL LOGIC ELEMENT 失效
公开(公告)号：JPS63280225A
公开(公告)日：1988-11-17
申请号：JP11528287
申请日：1987-05-12
申请人： MITSUBISHI ELECTRIC CORP
发明人： KOJIMA KEISUKE , NODA SUSUMU , HISAMA KAZUO
IPC分类号： G02F3/00 , H01S5/00
摘要： PURPOSE:To easily obtain an optical logic element forming plural logic elements on one and the same substrate and capable of complex operation by constituting a resonator in a semiconductor of an optical waveguide equipped with diffraction gratings and mutually connecting plural semiconductor lasers. CONSTITUTION:A laser A controlled by current flowing into a p-electrode 1a has a resonator consisting of diffraction gratings 4a, 4b and is called as a distributing Bragg reflection type laser and a laser B controlled by the current flowing into a p-electrode 1b constitutes its resonator of diffraction gratings 4b, 4c. Both the lasers A, B are coupled with each other through an optical waveguide consisting of a p-clad layer 3 having the diffraction grating 4b, and active layer 5 and an n-clad layer 6. When the laser A is ON, light is injected from the optical waveguide into the laser B and laser oscillation can be easily generated. When current expressed by Ib=Ib0 (Ib0 is the intermediate value of threshold current values of the laser B) is biased for instance, the optical output of the laser B is controlled by the ON and OFF of the laser A. Consequently, many optical logic elements can be integrated on the same substrate without requiring the accurate alignment of lenses.

2. 发明专利

JPS63232480A OPTICAL BISTABLE LASER DEVICE 失效
公开(公告)号：JPS63232480A
公开(公告)日：1988-09-28
申请号：JP6624887
申请日：1987-03-20
申请人： MITSUBISHI ELECTRIC CORP
发明人： KAMETANI MASAAKI , KOJIMA KEISUKE , HISAMA KAZUO , HAMANAKA KOICHI
IPC分类号： G02F3/00 , G02F3/02 , H01S5/00
摘要： PURPOSE:To easily perform an optical ON/OFF operation by an optical input itself by separating the gain peak of a medium in an active region from Bragg's wavelength of a diffraction grating, and forming a semiconductor layer for transmitting irradiated light at the top of the region. CONSTITUTION:A laser is oscillated by a frequency different from Bragg's wavelength of a diffraction grating. Thus, the gain peak of the active medium is separated from Bragg's wavelength, and a laser end face 20 is coated on both sides with high reflection films. Accordingly, oscillated light is diffracted by the diffraction grating, irradiated toward the top of the laser, but directed obliquely upward, and shielded by a slit 19. Thus, it becomes apparently OFF as the laser. This laser is oscillated in the same frequency as that of signal light 22 by its injection synchronization, diffracted light is perpendicularly irradiated toward the top of the laser, and the slit 19 formed at the top can be transmitted perpendicularly. Thus, the optical ON/OFF operation can be performed by the light input itself of the light 22.

3. 发明专利

JPS63161689A SEMICONDUCTOR LASER DEVICE 失效
公开(公告)号：JPS63161689A
公开(公告)日：1988-07-05
申请号：JP31038086
申请日：1986-12-25
申请人： MITSUBISHI ELECTRIC CORP
发明人： TOKUDA YASUKI , FUJIWARA KENZO , MITSUNAGA KAZUMASA , KOJIMA KEISUKE , OTA ATSUSHI , KAMETANI MASAAKI
IPC分类号： H01S5/00
摘要： PURPOSE:To give a beam condensation function or a beam deflection function to a semiconductor laser and control those functions easily by a method wherein a region where no contact layer exists is provided near the front end surface of the laser element and a light is applied to the region partially or selectively from the outside. CONSTITUTION:A contact layer near the front end surface of a laser element is removed and a light applied from the outside is absorbed by a P-type cladding layer 5 and an active layer 6 easily. In other words, when the light is applied, it is absorbed by the active layer 6 or the cladding layer 5 and light excited carriers are created. As the upper center part of the active layer 6 is shielded from the light by a slit plate 10 and the light is not applied to that part, the carrier distribution in the active layer 6 is large in the left and right parts to which the light is applied. Therefore, the refractive index of the center part is large and the refractive indices of the left and right parts are small. If a current is applied to a laser to induce a laser oscillation in this state, beams are condensed. The carrier distribution can be controlled by the intensity and wavelength of the applied light.

4. 发明专利

JPS6332980A SEMICONDUCTOR LASER 失效
公开(公告)号：JPS6332980A
公开(公告)日：1988-02-12
申请号：JP17596886
申请日：1986-07-25
申请人： MITSUBISHI ELECTRIC CORP
发明人： KOJIMA KEISUKE , TOKUDA YASUKI , FUJIWARA KENZO , TSUKADA NORIAKI , NOMURA YOSHITOKU , MATSUI TERUHITO
IPC分类号： H01S5/00
摘要： PURPOSE:To suppress laser oscillation with wavelength corresponding on a low quantum level and generate laser oscillation with short wavelength correspondingly on a high quantum level, by forming resonator structure, in which only the light with wavelength corresponding on the high quantum level is selectively reflected, in a semiconductor laser element having an active layer of quantum-well structure. CONSTITUTION:In a semiconductor laser element formed by serially piling a lower electrode 1, a substrate 2, the first conductivity-type clad layer 3, a quantum-well active layer 4, the second conductivity-type clad layer 5, a contact layer 6, and an upper electrode 7, the terminal plane of its resonator is coated with a reflective film 8 having wavelength selectivity. Therefore, resonator loss is increased on a low quantum level to suppress its oscillation, so that laser oscillation is generated on a high quantum level and short-wavelength laser is obtained. The resonator structure can be also provided with wavelength selectivity by installing a diffraction grating 9 inside or outside the resonator.

5. 发明专利

JP2561543B2 失效
公开(公告)号：JP2561543B2
公开(公告)日：1996-12-11
申请号：JP32770489
申请日：1989-12-18
申请人： MITSUBISHI ELECTRIC CORP
发明人： TAKAHASHI MASANOBU , TAI SHUICHI , KOJIMA KEISUKE , ARANISHI TOSHIO , HISAMA KAZUO
IPC分类号： G06F15/18 , G06N3/08 , G06N99/00

6. 发明专利

JPH03148191A VARIABLE WAVELENGTH SEMICONDUCTOR LASER 失效
公开(公告)号：JPH03148191A
公开(公告)日：1991-06-24
申请号：JP28691589
申请日：1989-11-02
申请人： MITSUBISHI ELECTRIC CORP
发明人： KOJIMA KEISUKE , HARA KUNIHIKO , MITSUNAGA KAZUMASA , HISAMA KAZUO
IPC分类号： H01S5/00 , H01S3/08 , H01S3/105 , H01S5/14
摘要： PURPOSE:To enable wavelength variation of good reproducibility at a fast speed by providing a diffraction grating or a prism, a wavelength control part which consists of a transmission factor variable element which can change transmission factor electrically, and a reflectance variable element which can change reflectance. CONSTITUTION:Light of a wavelength corresponding to wavelength of lambdaa to lambdac, for example is diffracted to different directions by a diffraction grating 3 having dispersion characteristics of wavelength from a semiconductor gain medium 1 which produces gain through current injection; and is injected to transmission factor variable elements 4a to 4c whose transmission factors can be electrically changed respectively. At this time, if the transmission factor variable element 4a alone has high transmission factor and others has low one, light of wavelength lambdaa alone is selectively reflected by a recessed mirror 5. As a semiconductor laser resonator, it has high reflectance to a wavelength lambdaa alone and oscillates at the wavelength lambdaa. Then, if the transmission factor variable element 4b alone is put in a state of high transmission factor, an oscillation wavelength is switched to lambdab. Thereby, a wavelength can be changed with good reproducibility at a fast speed.

7. 发明专利

JPH01204029A PHASE CONJUGATE WAVE GENERATING DEVICE 失效
公开(公告)号：JPH01204029A
公开(公告)日：1989-08-16
申请号：JP2920488
申请日：1988-02-10
申请人： MITSUBISHI ELECTRIC CORP
发明人： KOJIMA KEISUKE
IPC分类号： H01S3/0915 , G02F1/35 , H01S3/00 , H01S3/091 , H01S5/00
摘要： PURPOSE:To easily separate signal light and pump light by adding light which has a plane of polarization crossing oscillation light oscillating with single wavelength and has the same wavelength with the oscillation light. CONSTITUTION:The amplitudes of pump light beams 1 and 2 which are generated in a laser 5 and travel forth and back are denoted as A1x and A2x. Then probe light 3 (which has its plane of polarization crossing the pump light beams 1 and 2 at right angles and the same wavelength with the oscillation light) with an amplitude A3y is implanted from outside. Signal light 4 with an amplitude A4y is generated in the opposite direction from the probe light 3 in the laser with those three light beams 1, 2, and 3. The plane of polarization of this signal light 4 crosses the pump light beams 1 and 2 at right angles, so they are easily separated by using a polarizer 6.

8. 发明专利

JPS6388888A SEMICONDUCTOR LASER 失效
公开(公告)号：JPS6388888A
公开(公告)日：1988-04-19
申请号：JP23521886
申请日：1986-10-02
申请人： MITSUBISHI ELECTRIC CORP
发明人： OTSUKA KENICHI , SUGIMOTO HIROSHI , TAI SHUICHI , KOJIMA KEISUKE , NODA SUSUMU
IPC分类号： H01S5/00 , H01S5/12 , H01S5/227
摘要： PURPOSE:To obtain a semiconductor laser having a narrow oscillation spectrum by doping an acceptor impurity having activation energy equal to the activation energy of acceptor level specific for a mixed crystal of 4-element mixed crystal for forming an active layer. CONSTITUTION:When a voltage is applied forwardly between an N type InP substrate 1 and a P type InGaAsP contact layer 6, carrier is implanted in an acceptor-doped InGaAsP active layer 3, electrons and holes are enclosed in the layer 3 due to the refractive index difference and the forbidden band width difference of an N-type clad layer 2 and a P-type InP clad layer 5, and also enclosed laterally by a P-type InP buried layer 7 and an N-type InP buried layer 8, and recombined by radiation. Here, a light propagates in an InGaAsP guide layer 4 with a refractive index, and only the light of wavelength specified by the period of a diffraction grating obtains a gain to be laser-oscillated.

9. 发明专利

JPS6332987A INTEGRATED SEMICONDUCTOR LASER 失效
公开(公告)号：JPS6332987A
公开(公告)日：1988-02-12
申请号：JP17597586
申请日：1986-07-25
申请人： MITSUBISHI ELECTRIC CORP
发明人： TSUKADA NORIAKI , TOKUDA YASUKI , FUJIWARA KENZO , KOJIMA KEISUKE
IPC分类号： H01S5/00 , H01S5/028 , H01S5/06 , H01S5/062 , H01S5/0625 , H01S5/10 , H01S5/12 , H01S5/125 , H01S5/20 , H01S5/32 , H01S5/34 , H01S5/40
摘要： PURPOSE:To enable laser oscillation to be generated on a high quantum level, by forming a superlattice layer which neighbors an active layer and which has a quantum level corresponding to one of the quantum levels in the quantum- well of the active layer so that a resonant tunnel effect occurs between both levels so as to move electrons. CONSTITUTION:A superlattice layer 4 which has periodical structure and which is made of AlGaAs and AlAs, or of GaAs and AlAs, is formed on the p- AlGaAs clad layer 3 side of a quantum-well active layer 5, and then the n=1 sub-band energy formed in this superlattice is made to become the n=1 quantum level energy of the quantum-well active layer and is regulated so that a resonant tunnel effect occurs between both the energy levels. When electrons injected from the side of the n-AlGaAs clad layer 6 enter into the active layer 5, this resonant tunnel effect allows energy to be released from the n=1 quantum level of the active layer to the n=1 quantum level of the superlattice layer 4, so that energy relaxation form the n=2 quantum level to the n=1 one can be generated.

10. 发明专利

JPS6126281A Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：JPS6126281A
公开(公告)日：1986-02-05
申请号：JP14901084
申请日：1984-07-16
申请人： Mitsubishi Electric Corp
发明人： KOJIMA KEISUKE , KURODA KENICHI , HISAMA KAZUO , ARANISHI TOSHIO
IPC分类号： H01S5/00 , H01S5/40
CPC分类号： H01S5/4043
摘要： PURPOSE:To obtain the titled device which oscillates with wide spectra by a method wherein the forbidden band width of a semiconductor thin layer made of a plurality of layers constituting the active layer is varied stepwise, and each boundary is provided with a barrier layer for carrier confinement. CONSTITUTION:Active layers 2a and 2b of each different forbidden band widths are formed by lamination on an N type same conductor substrate 1, and a P type carrier confinement layer 3 is provided thereon. Next, insulation layers 4 opposed to each other are formed on the layer 3, and an electrode 5 is adhered over the whole surface while filling the gap therebetween. When current is passed across the electrode 5 and the substrate 1 in such a construction, electrons (e) from the substrate 1 and holes (h) from the confinement layer 3 flow into the active layers 2a and 2b, and induced emission occurs by the electrons (e) and holes (h) accumulated in the active layers 2a and 2b. Since both the active layers 2a and 2b are different in forbidden band width, the widths of gain spectra and oscillation spectra of the whole enlarge, and the interferable length reduces. Here, even when the forbidden band width is varied in saw-tooth form, or varied continuously, the same effect can be obtained.
摘要翻译：目的：通过一种方法获得用宽频谱振荡的标题装置，其中由构成有源层的多个层制成的半导体薄层的禁带宽度逐步变化，并且每个边界设置有用于载体的阻挡层禁闭构成：通过层叠在N型相同导体基板1上形成各个不同禁带宽度的有源层2a和2b，并且在其上提供P型载流子限制层3。接下来，在层3上形成彼此相对的绝缘层4，并且在填充其间的间隙的同时将电极5粘附在整个表面上。当电流以这种结构通过电极5和基板1时，来自基板1的电子（e）和来自约束层3的空穴（h）流入有源层2a和2b，并且通过电子（e）和空穴（h）积聚在有源层2a和2b中。由于有源层2a和2b两者的禁带宽度是不同的，所以放大倍率的增益谱和振荡频谱的宽度减小，干涉长度减小。这里，即使禁止带宽以锯齿形式变化或连续变化，也可以获得相同的效果。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式