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1. 发明专利

JPH04199832A ELECTRONIC DEVICE 失效
公开(公告)号：JPH04199832A
公开(公告)日：1992-07-21
申请号：JP33623090
申请日：1990-11-29
申请人： MITSUBISHI ELECTRIC CORP
发明人： TSUKADA NORIAKI , KANEMOTO KYOZO , TOKUDA YASUKI , ABE YUJI
IPC分类号： H01L29/812 , H01L21/338 , H01L29/778
摘要： PURPOSE:To obtain high-density carrier electrons without reducing the mobility of carrier electrons in the active region of an electronic device by selectively removing a selectively doped layer on the surface of a 2-dimensional electronic formation section. CONSTITUTION:A 2-dimensional electron channel 3, which is formed under a section 7 removed from an Si-doped layer by etching, is used as the active region of an electronic device. Thus, the gate electrode is formed in this region 7. In this way, the Si-doped layer 5 located near the electron channel 3 is removed and scattering with donor ions in this section eliminated, making possible the achievement of high carrier electron mobility. As a result, carrier electron mobility can be enhanced without reducing the electron carrier density of the active region (electron channel) of the electronic device.

2. 发明专利

JPH04134726A OPTICAL FREQUENCY MULTIPLEX SIGNAL PROCESSING METHOD 失效
公开(公告)号：JPH04134726A
公开(公告)日：1992-05-08
申请号：JP25933190
申请日：1990-09-26
申请人： MITSUBISHI ELECTRIC CORP
发明人： YAGYU EIJI , NISHIMURA TETSUYA , YOSHIMURA MOTOMU , TSUKADA NORIAKI
IPC分类号： G11B7/00 , G11B7/0045 , G11B7/005
摘要： PURPOSE:To allow the higher speed optical frequency multiplex signal processing of frequency region by shifting the absorption spectra of the light of a medium which changes the absorption spectra by an optical Start effect. CONSTITUTION:The optical Stark effect is generated in a memory region 51 and the absorption spectra of the light of the memory region 51 are shifted to the high frequency side according to the intensity of a laser beam 7 for stimulation when the laser light 7 for stimulation of the frequency omegaP from the laser 1 for stimulation is deflected by an optical deflector 4 and is made incident on the memory region 51 of an optical recording medium 5. Then, the shift arises in the absorption spectra of the light of the medium 5 and, therefore, the frequency multiplex incident light is eventually subjected to the intensity modulation in the frequency region and the frequency multiplex exit light subjected to the intensity modulation in the frequency region is obtd. The signal multiplexed in the frequency region is reproduced at a high speed from the optical recording medium in this way without subjecting the light for signal reproduction to frequency scanning and the signal processing to the arbitrary frequency multiplex incident light is possible.

3. 发明专利

JPH0315045A OPTICAL RECORDING MEDIUM 失效
公开(公告)号：JPH0315045A
公开(公告)日：1991-01-23
申请号：JP2277090
申请日：1990-02-01
申请人： MITSUBISHI ELECTRIC CORP
发明人： YOSHIMURA MOTOMU , NISHIMURA TETSUYA , TSUKADA NORIAKI
IPC分类号： G03C1/72 , G11B7/24 , G11B7/244 , G11C13/04
摘要： PURPOSE:To enable optical recording using photochemical hole burning (PHB) not only at the temp. of liq. helium but also at the temp. of liq. nitrogen by using specified compds. as guest and host molecules in an optical recording layer. CONSTITUTION:Tetrasodium 5,10,15,20-tetra(4-sulfonatophenyl)porphyrin dodecahydrate or 5,10,15,20-tetrakis(1-methyl-4-pyridyl)-21H,23H-porphin tetra-p- tosylate may be used as a guest molecule in an optical recording layer. At least one kind of compd. consisting of units represented by formula I is used as a host molecule. In the formula I, R1 is H or CH3 and R2 is C2H4, C3H6 or C4H8. Optical recording using PHB is performed at the temp. of liq. helium or above and even at the temp. of liq. nitrogen.

4. 发明专利

JPH02309327A OPTICAL FUNCTIONAL DEVICE 失效
公开(公告)号：JPH02309327A
公开(公告)日：1990-12-25
申请号：JP13213489
申请日：1989-05-24
申请人： MITSUBISHI ELECTRIC CORP
发明人： TSUKADA NORIAKI , TOKUDA YASUKI
IPC分类号： G02F1/35 , G02F3/02
摘要： PURPOSE:To obtain an optical functional device capable of realizing an optical memory element, an optical logical element and an optical switching element. etc., which use the wavelength of light as information amount by combining an optical bistable element having (p-i-n) structure for making quantum well structure function as a light absorption part with a wavelength variable laser. CONSTITUTION:The optical bistable element 20a in which the intensity of light of output is set so as to show bistability for a certain wavelength region of the light has the (p-i-n) structure for making the quantum well structure function as the light absorption part and is set so that the intensity of outgoing light may show bistability or hysteresis characteristic within the specified range of the light absorption quantity in the light absorption part. When the bistable element 20a is irradiated with the light from the wavelength variable laser element 30, the intensity of the output light becomes stable for a certain wavelength region of the light. By changing the wavelength over the wavelength region, the intensity of the output light is settled at another stable point in terms of bistability. Namely, the optical memory element, the optical logical element and the optical switching element, etc., where the processing of information can be performed by setting the wavelength of incident light as a medium can be constituted, and the wavelength is utilized for processing optical information in addition to the intensity of the light.

5. 发明专利

JPH02256031A SEMICONDUCTOR OPTICALLY NONLINEAR MATERIAL 失效
公开(公告)号：JPH02256031A
公开(公告)日：1990-10-16
申请号：JP7925589
申请日：1989-03-29
申请人： MITSUBISHI ELECTRIC CORP
发明人： TOKUDA YASUKI , TSUKADA NORIAKI
IPC分类号： G02F1/35 , G02F1/355
摘要： PURPOSE:To obtain nonmonotonic optical nonlinearity by forming the intrinsic layer with a combined multiple quantum well structure. CONSTITUTION:The periodically laminated structure of n-i-p-i as the semiconductor optically nonolinear material has a p type GaAs layer 1, an n type GaAs layer 2, an n type GaAs substrate 4 and the intrinsic layer 5 consisting of a combined multiple quantum well structure. The intrinsic layer 5 is provided with a GaAs well layer 6 having about 100Angstrom thickness and an AlGaAs barrier layer 7 having 10Angstrom thickness. Consequently, when the band is changed by screening the built-in electric field by a carrier formed by light excitation and/or by impressing an electric field on the laminated structure, plural quantum levels in the quantum well cross oppositely each other, and strong optical transition is generated in the spatially the same intrinsic region. Nonmonotonic optical nonlinearity is obtained in this way.

6. 发明专利

JPH0287125A OPTICAL NONLINEAR ELEMENT 失效
公开(公告)号：JPH0287125A
公开(公告)日：1990-03-28
申请号：JP23941688
申请日：1988-09-22
申请人： MITSUBISHI ELECTRIC CORP
发明人： TOKUDA YASUKI , TSUKADA NORIAKI
IPC分类号： G02F1/35 , G02F1/017
摘要： PURPOSE:To vary the absorption characteristics according to the wavelength of signal light by flattening the bend of the energy band in a light absorption region by the carrier formed by incidence of the signal light. CONSTITUTION:A quantum well layer 25 of 100Angstrom and a quantum well layer 26 of 80Angstrom are laminated via a tunnel barrier layer 27 to constitute an asymmetric bond quantum well structure. The band structure is bent in the thermally equil. state because of the built-in electric field and is flattened because of screening by photoexcitation carriers when the intensity of the incident light is gradually increased. Since the carriers generated by the photoexcitation in such a manner negate the built-in electric field made in a p-i-n junction, the energy band is nearly flattened and the quantum levels are intersected at this time, by which the absorption peak wavelength is changed. The absorption characteristics are varied in this way according to the wavelength.

7. 发明专利

JPH01133903A FORMATION OF SUPERCONDUCTING THIN FILM 失效
公开(公告)号：JPH01133903A
公开(公告)日：1989-05-26
申请号：JP29271187
申请日：1987-11-18
申请人： MITSUBISHI ELECTRIC CORP
发明人： KOJIMA KAZUYOSHI , KANEMOTO KYOZO , NOGUCHI TAKU , OOKAWA KUNIO , TAKAMI TETSUYA , TSUKADA NORIAKI
IPC分类号： C01B13/14 , C01G1/00 , C01G3/00 , C04B41/87 , C23C14/08 , H01B12/06 , H01B13/00 , H01L39/24
摘要： PURPOSE:To form a superconductive thin film contg. Ba with high reproducibility when the superconductive thin film contg. Ba is formed on a substrate by sputtering, by using a BaF target as one of targets used. CONSTITUTION:When targets 6 are placed opposite to a substrate 4 and a superconductive thin film contg. Ba is formed on the substrate 4 by sputtering in vacuum, a BaF target is used as one of the targets 6. This method may be applicable to the formation of a Y-Ba-Cu-O superconductive thin film. Since BaF is chemically stable in the air, the superconductive thin film contg. Ba can be formed with high reproducibility.

8. 发明专利

JPH01101673A TRANSITION TEMPERATURE CONTROLLER FOR SUPERCONDUCTING THIN FILM 失效
公开(公告)号：JPH01101673A
公开(公告)日：1989-04-19
申请号：JP26038887
申请日：1987-10-15
申请人： MITSUBISHI ELECTRIC CORP
发明人： NOGUCHI TAKU , TSUKADA NORIAKI , TAKAMI TETSUYA , OOKAWA KUNIO , KOJIMA KAZUYOSHI , KANEMOTO KYOZO
IPC分类号： H01L41/08 , H01L39/16
摘要： PURPOSE:To provide a uniaxial crystal lattice distortion and to reduce dimensions of a device by controlling the transition temperature of a superconductive thin film while modifying the crystal lattice of the superconductive thin film by transferring the distortion to a superconductive thin film on a piezoelectric substrate. CONSTITUTION:A superconductive thin film 1 is formed on a piezoelectric substrate 2, electrodes 2 being provided on both ends of such piezoelectric sub strate 2 to apply a voltage. Application of the voltage to the piezoelectric sub strate 2 causes a distortion on the piezoelectric substrate 2, and this distortion is transferred through the superconductive thin film 1 to cause its crystal lattice to distort, thus changing its transition temperature. To control the transition temperature of the superconductor, the piezoelectric effect is utilized, and uniaxi al crystal lattice distortions are provided while the crystal intervals of the superconductor is changed through the controlled voltage. According to the constitution, crystal lattice intervals can either be expanded or shortened, as well as a simplified, small-sized, and inexpensive transition temperature control ler for superconductive thin films can be obtained.

9. 发明专利

JPS6416976A SUPERCONDUCTIVE SENSOR 失效
公开(公告)号：JPS6416976A
公开(公告)日：1989-01-20
申请号：JP17358787
申请日：1987-07-10
申请人： MITSUBISHI ELECTRIC CORP
发明人： TSUKADA NORIAKI , OOKAWA KUNIO , KOJIMA KAZUYOSHI
IPC分类号： H01L39/22 , G01R33/035
摘要： PURPOSE:To detect a slight signal by housing a magnetic flux detecting coil consisting of a high-temp. superconductor into an outer Dewar vessel. CONSTITUTION:The above-mentioned flux detecting coil 3 and a 1st coupling coil 5 connected to the coil 3 are constituted of the high-temp. superconductor and these coils are housed into the outer Dewar vessel in which liquid helium is filled. A dc-SQUID (superconductive quantum interference device) ring 1 and a magnetic flux input coil 2 magnetically coupled to the ring 1 and the 2nd coupling coil 4 connected to the coil 2 are housed in the inner Dewar vessel in which the liquid helium is filled. The coils 5, 4 are magnetically coupled via the bottom wall of the inner Dewar vessel, by which the distance between the material to be measured and the coil 3 is shortened. Even the slight radio waves are thus detected.

10. 发明专利

JPS63281491A WAVELENGTH-TUNABLE SEMICONDUCTOR LASER DEVICE 失效
公开(公告)号：JPS63281491A
公开(公告)日：1988-11-17
申请号：JP11740387
申请日：1987-05-13
申请人： MITSUBISHI ELECTRIC CORP
发明人： TSUKADA NORIAKI , FUJIWARA KENZO , TOKUDA YASUKI
IPC分类号： H01S5/00 , H01S5/026 , H01S5/0625 , H01S5/10 , H01S5/34
摘要： PURPOSE:To enlarge the variable range of a laser oscillation wavelength, and increase the response speed, by shifting the exceton energy level of the quantum well active layer of a first semiconductor laser to the higher energy side, by the laser beam of a second semiconductor laser, whose wavelength is shorter than the oscillation wavelength of a first semiconductor laser. CONSTITUTION:A DFB laser A and a DH laser B are formed on the same substrate 1. (2) is an n-AlGaAs lower clad layer. (21) is a laser active layer composed of a multi-quantum well structure of a GaAs layer and an AlGaAs layer. (4) is a p-AlGaAs upper clad layer. (5) is a p GaAs cap layer. (6) and (6b) are upper surface electrodes. (6c) is a lower rear electrode. (7) is a diffraction grating region of the DFB laser A. A band end portion exists in the semiconductor. A light having a wavelength longer than it can be transmitted, and a light having a wavelength shorter than it is absorbed in the semiconductor surface. When a laser light is turned on in the state where the wavelength omegaof an emitted laser beam is separated toward the long wavelength side from the absorption peak omega0(omega0>omega), the absorption spectrum of excitation can be shifted to the short wavelength side by the AC Stark effect.

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