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21. 发明专利

JP2004338971A METHOD AND APPARATUS FOR MANUFACTURING SiC SINGLE CRYSTAL 有权
公开(公告)号：JP2004338971A
公开(公告)日：2004-12-02
申请号：JP2003134466
申请日：2003-05-13
申请人： Denso Corp , 株式会社デンソー
发明人： KONDO HIROYUKI , KITO YASUO , ISOZAKI YOSHIFUMI , MAKINO HAJIME , YAMAZAKI SEIJI , NAKAMURA DAISUKE
IPC分类号： C30B29/36
摘要： PROBLEM TO BE SOLVED: To provide a method and an apparatus for manufacturing an SiC single crystal by which a large size and high purity SiC single crystal can be manufactured while suppressing the generation of a void defect or curvature (strain) of lattice.
SOLUTION: A buffer member 10 is interposed between an SiC seed crystal 4 for growing the SiC single crystal 5 and a cover body 2 for supporting the SiC seed crystal 4. The SiC seed crystal 4 is adhered on one surface of the plate part 11 of the buffer member 10. A projection 12 having a pin hole 13 is formed on the other surface of the plate part 11. The buffer member 10 is connected to the cover body 2 by inserting a pin 17 into a pin hole 16 of the cover body 2 through the pin hole 13.
COPYRIGHT: (C)2005,JPO&NCIPI

22. 发明专利

JP2014159351A Silicon carbide single crystal, and production method of silicon carbide single crystal 有权
标题翻译：单晶碳化硅单晶和碳化硅单晶的生产方法
公开(公告)号：JP2014159351A
公开(公告)日：2014-09-04
申请号：JP2013031239
申请日：2013-02-20
申请人： Denso Corp , 株式会社デンソー
发明人： KONDO HIROYUKI , ONDA SHOICHI , KITO YASUO , WATANABE HIROKI
IPC分类号： C30B29/36
CPC分类号： C30B29/36 , C01B32/956 , C30B23/00 , C30B23/025
摘要： PROBLEM TO BE SOLVED: To provide a high-quality SiC single crystal which is suitable for producing a device capable of suppressing a leak current.SOLUTION: Screw dislocation 2 is classified into L dislocation 2a which has large strain and can be a generation factor of a leak current and nL dislocation 2b which has small strain and cannot be a generation factor of a leak current, and the density of the L dislocation 2a is set to be 300/cmor less, preferably 100/cmor less. Hereby, a high-quality SiC single crystal 1 which is suitable for producing a device capable of suppressing a leak current can be obtained.
摘要翻译：要解决的问题：提供一种适用于制造能够抑制泄漏电流的装置的高品质SiC单晶。解决方案：螺旋位错2分为L位错2a，其应变大，可以是泄漏电流和nL位错2b，其应变小，不能成为泄漏电流的产生因子，并且L位错2a的密度设定为300 / cm以下，优选为100 / cm以下。因此，可以获得适合于制造能够抑制泄漏电流的器件的高质量SiC单晶1。

23. 发明专利

JP2009051702A Method for producing silicon carbide single crystal 有权
标题翻译：生产碳化硅单晶的方法
公开(公告)号：JP2009051702A
公开(公告)日：2009-03-12
申请号：JP2007221129
申请日：2007-08-28
申请人： Denso Corp , 株式会社デンソー
发明人： KONDO HIROYUKI , MATSUI MASAKI
IPC分类号： C30B29/36 , C30B23/06
摘要： PROBLEM TO BE SOLVED: To provide a method in which the carbonization phenomenon of a seed crystal can be suppressed to prevent a SiC single crystal from taking different polymorphic crystal forms other than a desired crystal form.
SOLUTION: In this method, crystal growth is performed by a sublimation gas of a small-diameter raw material 2a in the stage of the initial period of growth of a SiC single crystal 4, and crystal growth is performed by a sublimation gas of a large-diameter raw material 2b after the initial period of growth. This can prevent the SiC single crystal 4 from taking different polymorphic crystal forms other than a desired crystal form in the initial period of growth of the SiC single crystal 4 even when the small-diameter raw material 2a and the large-diameter raw material 2b are used together. The method according to the present embodiment is also suitable for mass production because the method allows reduction in raw material cost, as compared with the case where the SiC single crystal 4 is grown only by the small-diameter raw material 2a.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：待解决的问题：提供可以抑制晶种的碳化现象以防止SiC单晶不同于所需晶体形式以外的不同多晶型晶体的方法。解决方案：在该方法中，在SiC单晶4的初始生长阶段的阶段，通过小直径原料2a的升华气体进行晶体生长，并且通过升华气体进行晶体生长在初始生长周期后的大直径原料2b。即使当小直径原料2a和大直径原料2b是SiC单晶4时，也可以防止SiC单晶4在SiC单晶4的生长的初始阶段中得到不同于所需晶体形状的不同的多晶型一起使用与仅通过小直径原料2a生长SiC单晶4的情况相比，本实施方式的方法也适合于批量生产，因为该方法能够降低原料成本。版权所有（C）2009，JPO＆INPIT

24. 发明专利

JP2009046367A Apparatus for manufacturing silicon carbide single crystal 有权
标题翻译：制造单晶碳化硅的装置
公开(公告)号：JP2009046367A
公开(公告)日：2009-03-05
申请号：JP2007216146
申请日：2007-08-22
申请人： Denso Corp , 株式会社デンソー
发明人： KONDO HIROYUKI , MATSUI MASAKI
IPC分类号： C30B29/36
摘要： PROBLEM TO BE SOLVED: To provide an apparatus for manufacturing a long size SiC single crystal having high quality.
SOLUTION: In the apparatus for manufacturing a silicon carbide single crystal by a sublimation recrystallization method, a vessel 1 includes: a hollow-shaped main body 1a whose one face is opened and in which a silicon carbide raw material is arranged; a cap material 1b arranged on the one face side being opened of the main body 1a; and a pedestal 5 on which a silicon carbide single crystal substrate 3 is arranged. The cap material 1b and the pedestal 5 are constituted of different members, and the pedestal 5 is bonded to the cap material 1b through a joining member 6.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：待解决的问题：提供一种高品质的长尺寸SiC单晶的制造装置。解决方案：在通过升华重结晶法制造碳化硅单晶的装置中，容器1包括：一个开口的中空形主体1a，其中布置有碳化硅原料; 布置在主体1a的一个面侧上的盖材料1b; 以及配置有碳化硅单晶基板3的台座5。盖材料1b和基座5由不同的构件构成，基座5通过接合构件6接合到盖材料1b上。版权所有（C）2009，JPO＆INPIT

25. 发明专利

JP2014040372A Method for producing silicon carbide single crystal and production apparatus 有权
标题翻译：生产碳化硅单晶和生产设备的方法
公开(公告)号：JP2014040372A
公开(公告)日：2014-03-06
申请号：JP2013250277
申请日：2013-12-03
申请人： Denso Corp , 株式会社デンソー
发明人： MATSUI MASAKI , KONDO HIROYUKI , HIROSE FUSAO
IPC分类号： C30B29/36
摘要： PROBLEM TO BE SOLVED: To provide a method for producing a SiC single crystal and a production apparatus that may continuously supply a sublimation gas from a powdery raw material to a seed crystal.SOLUTION: When heating of a crucible 1 is started, a sublimation gas formed from a powdery raw material 5 exposed to a hollow part of a separation wall 4 is supplied to a growth space region 6. A prescribed time after the heating of the crucible 1 started, a lid 1b is moved relatively away from a container body 1a to separate an edge face 4e of the other side end 4c of the separation wall 4 from a bottom face of the container body 1a so that the powdery raw material 5 contacted to the other side end 4c of the separation wall 4 is exposed to the inside of the container body 1a as a new surface for supplying the sublimation gas, from which the sublimation gas is supplied from the exposed part to the growth space region 6 through a gas supply passage 7 and through holes 4d to grow a SiC single crystal 8.
摘要翻译：要解决的问题：提供一种SiC单晶的制造方法和可以将粉末状原料的升华气体连续地供给到晶种的制造装置。解决方案：当坩埚1的加热开始时，升华气体由暴露于分隔壁4的中空部分的粉末状原料5形成的部分被供给到生长空间区域6.在坩埚1的加热开始之后的规定时间内，盖1b相对远离容器主体1a移动将分隔壁4的另一侧端部4c的边缘面4e从容器主体1a的底面分离，使得与分隔壁4的另一侧端部4c接触的粉末原料5暴露在内部作为用于供应升华气体的新表面的升华气体，其中升华气体通过气体供给通道7从暴露部分供应到生长空间区域6，并且通过孔4d以生长SiC单体c 晶体8。

26. 发明专利

JP2008290903A Method and apparatus for producing silicon carbide single crystal 有权
标题翻译：生产碳化硅单晶的方法和装置
公开(公告)号：JP2008290903A
公开(公告)日：2008-12-04
申请号：JP2007137444
申请日：2007-05-24
申请人： Denso Corp , 株式会社デンソー
发明人： MATSUI MASAKI , KONDO HIROYUKI , HIROSE FUSAO
IPC分类号： C30B29/36 , C30B23/06
摘要： PROBLEM TO BE SOLVED: To provide a method and apparatus for producing a SiC single crystal, by which a sublimated gas can be continuously supplied to a seed crystal from a powdery raw material. SOLUTION: When heating of a crucible 1 is started, the sublimated gas generated from the powdery raw material 5 exposed to a hollow part of a separation wall 4 is supplied to a growth space area 6. Then, after a certain time from the start of heating the crucible 1, a lid 1b is moved relatively to a vessel body 1a so as to be separated from the vessel body 1a. Thereby, the end face 4e on the other end side 4c of the separation wall 4 is separated from the bottom surface of the vessel body 1a, the powdery raw material 5 brought into contact with the other end side 4c of the separation wall 4 is exposed to the inside of the vessel body 1a as a new supply face of the sublimated gas, and the sublimated gas is supplied from the exposed part to the growth space area 6 through a gas supply passage and through-holes 4d. The SiC single crystal is grown under such conditions. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于制造SiC单晶的方法和装置，通过该方法和装置，可以从粉末状原料将升华的气体连续地供给到晶种。解决方案：当坩埚1的加热开始时，从暴露于分隔壁4的中空部分的粉状原料5产生的升华气体被供给到生长空间区域6.然后，经过一定时间从开始加热坩埚1，盖1b相对于容器主体1a移动以与容器主体1a分离。由此，分离壁4的另一端4c上的端面4e与容器主体1a的底面分离，与分隔壁4的另一端4c接触的粉末状原料5露出作为升华气体的新的供给面到容器主体1a的内部，并且通过气体供给通道和通孔4d将升华的气体从暴露部分供给到生长空间区域6。在这种条件下生长SiC单晶。版权所有（C）2009，JPO＆INPIT

27. 发明专利

JP2017114728A ＳｉＣ単結晶の製造方法及びＳｉＣ単結晶审中-公开
公开(公告)号：JP2017114728A
公开(公告)日：2017-06-29
申请号：JP2015252261
申请日：2015-12-24
申请人：昭和電工株式会社 , Showa Denko Kk , 株式会社デンソー , Denso Corp
发明人： FUJIKAWA YOHEI , KONDO HIROYUKI , TAKAHANE HIDETAKA
IPC分类号： C30B29/36
摘要：【課題】局所的な結晶方位のずれを含むモザイク性を緩和することができるSiC単結晶の製造方法を提供することを目的とする。【解決手段】本発明の一態様に係るSiC単結晶の製造方法は、a面成長とm面成長により種結晶を作製する種結晶作製工程と、前記種結晶からc軸方向にSiCを結晶成長させ、モザイク性緩和層を形成するモザイク性緩和工程と、前記モザイク性緩和層を除去する除去工程と、を有する。【選択図】図2

28. 发明专利

JP2014058446A Method for producing silicon carbide single crystal 有权
标题翻译：生产碳化硅单晶的方法
公开(公告)号：JP2014058446A
公开(公告)日：2014-04-03
申请号：JP2013247715
申请日：2013-11-29
申请人： Denso Corp , 株式会社デンソー , Toyota Motor Corp , トヨタ自動車株式会社
发明人： KONDO HIROYUKI , TAKAHANE HIDETAKA , ADACHI AYUMI
IPC分类号： C30B29/36
摘要： PROBLEM TO BE SOLVED: To provide a method for producing a SiC single crystal that enables a stable growth of the SiC single crystal on growing the SiC single crystal using a producing apparatus with a heat insulator disposed around a crucible.SOLUTION: A Si absorbing step is performed by providing a vessel body 2a in which an Si containing material 21 is charged and a lid 2b as a crucible 2, disposing a heat insulator 20 of graphite without Si absorbed at the circumference of the crucible 2 so that it surrounds the circumference of the crucible 2, heating the Si containing material 21 by heating the crucible 2 to make the heat insulator 20 absorb a sublimation gas leaked from the crucible 2. Then, a growing step for growing the SiC single crystal on a seed crystal is performed by providing a crucible in which a powdery raw material is charged in the vessel body 2a and the seed crystal is disposed on a pedestal 3 formed on the lid 2b as the crucible 2, and heating the crucible 2 with the Si absorbed heat insulator 20 obtained by the Si absorbing step disposed at the circumference of the crucible 2 so that it surrounds the circumference of the crucible 2.
摘要翻译：要解决的问题：提供一种制造SiC单晶的方法，其使用具有设置在坩埚周围的隔热材料的制造装置生长SiC单晶时能够稳定地生长SiC单晶。解决方案：Si吸收步骤通过提供其中装载有Si的材料21的容器主体2a和作为坩埚2的盖2b来进行，在坩埚2的周围设置没有Si的石墨的绝热体20，以使其围绕圆周坩埚2通过加热坩埚2来加热含Si材料21，以使绝热体20吸收从坩埚2泄漏的升华气体。然后，通过提供在晶种上生长SiC单晶的生长步骤其中将粉末状原料装入容器主体2a并将晶种设置在作为坩埚2的形成在盖2b上的基座3上的坩埚，并且用坩埚2加热坩埚2 e Si吸收通过设置在坩埚2的圆周处的Si吸收步骤获得的绝热体20，使得其围绕坩埚2的周围。

29. 发明专利

JP2011213563A Method for producing silicon carbide single crystal 有权
标题翻译：生产碳化硅单晶的方法
公开(公告)号：JP2011213563A
公开(公告)日：2011-10-27
申请号：JP2010086032
申请日：2010-04-02
申请人： Denso Corp , Toyota Motor Corp , トヨタ自動車株式会社 , 株式会社デンソー
发明人： KONDO HIROYUKI , TAKAHANE HIDETAKA , ADACHI AYUMI
IPC分类号： C30B29/36
摘要： PROBLEM TO BE SOLVED: To provide a method for producing SiC single crystals, which method enables stable growth of the SiC single crystals when growing the SiC single crystals by using an apparatus for producing wherein a heat insulating material is arranged around a crucible.SOLUTION: In the method for producing the SiC single crystals, an Si inclusion is allocated as a crucible 2 in a container body 2a and a cover body 2b is prepared; a heat insulation material made of black lead and not having absorbed Si is allocated at the outer circumference of the crucible 2 so as to surround the outer circumference of the crucible 2; and by heating the crucible 2, the Si inclusion is heated to cause a sublimated gas leaked from the crucible 2 to be adsorbed by a heat insulating material, thus causing Si to be adsorbed. Then, a powder raw material 5 is allocated in the container body 2a as the crucible 2 and the crucible 2 wherein seed crystals 4 are allocated on a pedestal 3 established on the cover body 2b is prepared; and in such a state that a heat insulating material 11 obtained by the Si-adsorbing process and having adsorbed Si is arranged in the outer circumference of the crucible 2 so as to embrace the outer circumference of the crucible 2, the crucible 2 is heated to vegetate SiC single crystals 6 on the seed crystals 4.
摘要翻译：要解决的问题：为了提供一种SiC单晶的制造方法，该方法能够通过使用绝热材料配置在坩埚周围的制造装置来生长SiC单晶时，可以稳定地生长SiC单晶。解决方案：在SiC单晶的制造方法中，将Si夹杂物作为坩埚2分配在容器主体2a中，制作盖体2b; 在坩埚2的外周配置由黑色铅构成的不具有吸收Si的绝热材料，以包围坩埚2的外周; 并且通过加热坩埚2，加热Si夹杂物，引起从坩埚2泄漏的升华气体被绝热材料吸附，从而使Si被吸附。然后，制作作为坩埚2的容器主体2a中的粉末原料5，并且准备在形成在盖体2b上的基座3上分配晶种4的坩埚2。并且在将坩埚2的外周配置为包围坩埚2的外周的状态下，将通过Si吸附法得到的吸附有Si的绝热材料11配置在坩埚2的外周，将坩埚2加热至种子晶体上植物SiC单晶6。

30. 发明专利

JP2011136903A Production method and production apparatus for silicon carbide single crystal 有权
标题翻译：碳化硅单晶的生产方法和生产设备
公开(公告)号：JP2011136903A
公开(公告)日：2011-07-14
申请号：JP2011075530
申请日：2011-03-30
申请人： Denso Corp , 株式会社デンソー
发明人： MATSUI MASAKI , KONDO HIROYUKI , HIROSE FUSAO
IPC分类号： C30B29/36 , C30B23/06
摘要： PROBLEM TO BE SOLVED: To provide a production method and a production apparatus for an SiC single crystal, in which a sublimated gas can be continuously supplied from a powder raw material to a seed crystal. SOLUTION: A sublimated gas is supplied from a silicon carbide raw material 14 disposed in a first chamber (raw material chamber 11d). After a predetermined period of time from starting to supply the sublimated gas from the silicon carbide raw material 14 disposed in the first chamber, a large amount of a sublimated gas is supplied from a silicon carbide raw material 15 disposed in a second chamber (a space enclosed by a hollow part of an outer vessel 11, a lid 13 and an inner vessel 12) to grow a silicon carbide single crystal 8. By producing sublimated gases in two chambers, and first growing the silicon carbide single crystal 8 by the sublimated gas produced in the first chamber and then continuously growing the silicon carbide single crystal 8 by the sublimated gas produced in the second chamber after a predetermined period of time, sublimated gases can be continuously supplied, which prevents decrease in the growth of the silicon carbide single crystal 8 caused by decrease in the supply of the sublimated gas. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：解决的问题：提供一种用于SiC单晶的制造方法和制造装置，其中升华的气体可以从粉末原料连续地供给到晶种。解决方案：升华的气体从设置在第一室（原料室11d）中的碳化硅原料14供给。在从设置在第一室中的碳化硅原料14开始供应升华气体的预定时间段之后，从设置在第二室（空间中的碳化硅原料15）供给大量的升华气体由外容器11的中空部分，盖13和内容器12包围）以生长碳化硅单晶8.通过在两个室中产生升华的气体，并且首先通过升华的气体生长碳化硅单晶8 在第一室中产生，然后在预定时间段之后通过在第二室中产生的升华气体连续生长碳化硅单晶8，可以连续地提供升华的气体，这防止了碳化硅单晶生长的降低 8由升华气体的供应量减少引起。版权所有（C）2011，JPO＆INPIT

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