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1. 发明专利

JP2011136903A Production method and production apparatus for silicon carbide single crystal 有权
标题翻译：碳化硅单晶的生产方法和生产设备
公开(公告)号：JP2011136903A
公开(公告)日：2011-07-14
申请号：JP2011075530
申请日：2011-03-30
申请人： Denso Corp , 株式会社デンソー
发明人： MATSUI MASAKI , KONDO HIROYUKI , HIROSE FUSAO
IPC分类号： C30B29/36 , C30B23/06
摘要： PROBLEM TO BE SOLVED: To provide a production method and a production apparatus for an SiC single crystal, in which a sublimated gas can be continuously supplied from a powder raw material to a seed crystal. SOLUTION: A sublimated gas is supplied from a silicon carbide raw material 14 disposed in a first chamber (raw material chamber 11d). After a predetermined period of time from starting to supply the sublimated gas from the silicon carbide raw material 14 disposed in the first chamber, a large amount of a sublimated gas is supplied from a silicon carbide raw material 15 disposed in a second chamber (a space enclosed by a hollow part of an outer vessel 11, a lid 13 and an inner vessel 12) to grow a silicon carbide single crystal 8. By producing sublimated gases in two chambers, and first growing the silicon carbide single crystal 8 by the sublimated gas produced in the first chamber and then continuously growing the silicon carbide single crystal 8 by the sublimated gas produced in the second chamber after a predetermined period of time, sublimated gases can be continuously supplied, which prevents decrease in the growth of the silicon carbide single crystal 8 caused by decrease in the supply of the sublimated gas. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：解决的问题：提供一种用于SiC单晶的制造方法和制造装置，其中升华的气体可以从粉末原料连续地供给到晶种。解决方案：升华的气体从设置在第一室（原料室11d）中的碳化硅原料14供给。在从设置在第一室中的碳化硅原料14开始供应升华气体的预定时间段之后，从设置在第二室（空间中的碳化硅原料15）供给大量的升华气体由外容器11的中空部分，盖13和内容器12包围）以生长碳化硅单晶8.通过在两个室中产生升华的气体，并且首先通过升华的气体生长碳化硅单晶8 在第一室中产生，然后在预定时间段之后通过在第二室中产生的升华气体连续生长碳化硅单晶8，可以连续地提供升华的气体，这防止了碳化硅单晶生长的降低 8由升华气体的供应量减少引起。版权所有（C）2011，JPO＆INPIT

2. 发明专利

JP2005225710A METHOD FOR MANUFACTURING SiC SINGLE CRYSTAL AND MANUFACTURING APPARATUS FOR SiC SINGLE CRYSTAL 有权
标题翻译：用于制造SiC单晶的SiC单晶和制造装置的方法
公开(公告)号：JP2005225710A
公开(公告)日：2005-08-25
申请号：JP2004035493
申请日：2004-02-12
申请人： Denso Corp , Toyota Central Res & Dev Lab Inc , 株式会社デンソー , 株式会社豊田中央研究所
发明人： KONDO HIROYUKI , MATSUI MASAKI , NAKAMURA DAISUKE
IPC分类号： C30B29/36
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing an SiC single crystal and a manufacturing apparatus for an SiC single crystal in which a cylindrical guide member is used and a high-quality crystal can be manufactured inside the member.
SOLUTION: The method is carried out by supplying gas as a source material to an SiC seed crystal 5 placed in a growth chamber (1, 2) and growing an SiC single crystal 6 from the SiC seed crystal 5. A cylindrical guide member 7 is disposed so as to surround the growth region of the SiC single crystal 6, and the SiC single crystal 6 is grown while keeping such conditions that the temperature of the source material gas is higher than the temperature of the inner wall of the guide member 7, that the temperature of the inner wall of the guide member 7 is higher than the temperature of the outer surface of the SiC single crystal 6, and that the temperature of the outer surface of the SiC single crystal 6 is higher than the temperature of the center part of the SiC single crystal 6.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种SiC单晶的制造方法以及使用圆筒形引导构件的SiC单晶的制造装置，并且可以在构件内部制造高质量的晶体。解决方案：该方法通过将气体作为源材料供应到放置在生长室（1,2）中的SiC籽晶5并从SiC籽晶5生长SiC单晶6。构件7被设置为围绕SiC单晶6的生长区域，并且生长SiC单晶6，同时保持原料气体的温度高于导向件的内壁的温度构件7，引导构件7的内壁的温度高于SiC单晶6的外表面的温度，并且SiC单晶6的外表面的温度高于温度的SiC单晶6的中心部分。版权所有（C）2005，JPO＆NCIPI

3. 发明专利

JP2012046425A Apparatus for manufacturing silicon carbide single crystal 有权
标题翻译：制造单晶碳化硅的装置
公开(公告)号：JP2012046425A
公开(公告)日：2012-03-08
申请号：JP2011264628
申请日：2011-12-02
申请人： Denso Corp , 株式会社デンソー
发明人： KONDO HIROYUKI , MATSUI MASAKI
IPC分类号： C30B29/36 , C30B23/02
摘要： PROBLEM TO BE SOLVED: To provide an apparatus for manufacturing a silicon carbide single crystal which suppresses deterioration of SiC single crystal due to the deformation of a cap material associated with the growth of SiC single crystal.SOLUTION: A pedestal 5 is constituted by a member different from a cap material 1b and a material in which SiC is almost the same as the thermal expansion coefficient is selected as a material of the pedestal 5. As a result, in a cooling process after the crystal growth of SiC single crystal 4, even if the cap material 1b deforms according to the effect of the growth of SiC multicrystal on the cap material 1b, little effect is given to the pedestal 5 which is bonded to the cap material 1b through a joining member 6. Further, although the pedestal 5 is thermally expanded by heating, SiC single crystal substrate 3 is not hardly affected by the thermal expansion coefficient of the pedestal 5 because the thermal expansion coefficient of the pedestal 5 is almost the same as that of SiC. In addition, a sheet-like thin cushioning material 7 is arranged between the cap material 1b and the pedestal 5 and the joining members 8 and 9 are arranged on both surfaces of the cushioning material 7. As a result, it is possible that the effect by the deformation of the cap material 1b after the crystal growth is hardly conducted to the pedestal 5.
摘要翻译：要解决的问题：提供一种制造碳化硅单晶的装置，其抑制由于与SiC单晶的生长相关联的盖材料的变形而导致的SiC单晶的劣化。解决方案：基座5由不同于盖材料1b的构件和SiC几乎与选择作为基座5的材料的热膨胀系数相同的材料构成。结果，在 SiC单晶4的晶体生长后的冷却工序，即使盖材料1b根据SiC多晶体的生长对盖材料1b的影响而变形，对与盖材料接合的台座5几乎没有影响此外，虽然台座5通过加热而热膨胀，但是由于台座5的热膨胀系数几乎相同，所以SiC单晶基板3几乎不受基座5的热膨胀系数的影响如SiC。此外，在盖材料1b和基座5之间设置片状的薄缓冲材料7，并且在缓冲材料7的两个表面上配置接合构件8,9。结果，可能的是，通过在晶体生长几乎不进入基座5之后，帽材料1b的变形。（C）2012年，JPO和INPIT

4. 发明专利

JP2012043993A Manufacturing method of semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：JP2012043993A
公开(公告)日：2012-03-01
申请号：JP2010184087
申请日：2010-08-19
申请人： Denso Corp , 株式会社デンソー
发明人： NAKAO SHIGEKI , NODA MICHITAKA , MATSUI MASAKI , OTSUKI HIROSHI , UCHIDA TOMOYA
IPC分类号： H01L21/3065 , H01L21/28 , H01L21/336 , H01L21/76 , H01L29/423 , H01L29/49 , H01L29/78
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device including a trench formation process that allows forming trenches having a side wall surface with a uniform angle while increasing an etching rate.SOLUTION: The bottom of a trench 12 is dug down until an aspect ratio reaches a specified value by three processes of a protective film formation process, a protective film peeling process, and an etching process. When the aspect ratio reaches the specified value or more, the bottom of the trench 12 is dug down by two processes of the protective film formation process and the etching process. With this manufacturing method, when the aspect ratio reaches the specified value or more, a width of the trench 12 to be etched by the etching process can be made narrow depending on the thickness of a damaged layer 14, and an angle of the interface between the damaged layer 14 and the portion other than the damaged layer 14 of a semiconductor substrate 10 can be made an almost desired angle. Also, in a region with a high aspect ratio, an etching rate is increased because the bottom of the trench 12 is dug down by the two processes.
摘要翻译：解决的问题：提供一种包括沟槽形成工艺的半导体器件的制造方法，其允许在增加蚀刻速率的同时形成具有均匀角度的侧壁表面的沟槽。解决方案：通过保护膜形成工艺，保护膜剥离工艺和蚀刻工艺的三个过程，挖掘沟槽12的底部直到纵横比达到特定值。当纵横比达到规定值以上时，通过保护膜形成工序和蚀刻工序的两个工序，将沟槽12的底部进行挖掘。利用该制造方法，当宽高比达到规定值以上时，根据损伤层14的厚度，可以使蚀刻工序所蚀刻的沟槽12的宽度变窄，可以使损伤层14和半导体衬底10的损坏层14以外的部分成为几乎所需的角度。此外，在具有高纵横比的区域中，由于通过两个工艺来挖掘沟槽12的底部，所以蚀刻速率增加。版权所有（C）2012，JPO＆INPIT

5. 发明专利

JP2011165987A Manufacturing method of semiconductor substrate 有权
标题翻译：半导体衬底的制造方法
公开(公告)号：JP2011165987A
公开(公告)日：2011-08-25
申请号：JP2010028314
申请日：2010-02-11
申请人： Denso Corp , 株式会社デンソー
发明人： SAKAKIBARA JUN , NODA MICHITAKA , MATSUI MASAKI , SAKAKIBARA TOSHIO
IPC分类号： H01L21/027 , H01L21/336 , H01L21/822 , H01L27/04 , H01L29/78
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method of semiconductor substrate capable of freely setting the size of the alignment mark and preventing the generation of problems such as a resist coating spot and a residual resist during a device manufacturing process, without having to install a dedicated process for forming alignment marks.
SOLUTION: A substrate 19 is prepared, trenches 14, 16 in which the trench width of an alignment mark region 15 is wider than that of a PN column region 13, are simultaneously formed on the alignment mark region 15 and the PN column region 13. Subsequently, a single crystal semiconductor layer 21 is completely buried in the trench 14 of the PN column region 13, while a part of the semiconductor layer 21 is formed so that a gap is formed in the trench 16 of the alignment mark region 15. Then, the trench 16 is closed by the single crystal semiconductor layer 21 so that a cavity 22 is formed in the trench 16 of the alignment mark region 15.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：解决的问题：提供一种能够自由地设定对准标记的尺寸并防止在器件制造过程中产生诸如抗蚀剂涂层斑点和残留抗蚀剂的问题的半导体衬底的制造方法，而不会安装用于形成对准标记的专用工艺。解决方案：准备衬底19，其中对准标记区域15的沟槽宽度比PN列区域13的沟槽宽度更宽的沟槽14,16同时形成在对准标记区域15和PN列上随后，单晶半导体层21被完全掩埋在PN列区域13的沟槽14中，而半导体层21的一部分形成为在对准标记区域的沟槽16中形成间隙然后，沟槽16由单晶半导体层21封闭，使得在对准标记区域15的沟槽16中形成空腔22.版权所有：（C）2011，JPO＆INPIT

6. 发明专利

JP2009091173A Manufacturing apparatus for silicon carbide single crystal 审中-公开
标题翻译：单晶碳化硅制造设备
公开(公告)号：JP2009091173A
公开(公告)日：2009-04-30
申请号：JP2007261128
申请日：2007-10-04
申请人： Denso Corp , 株式会社デンソー
发明人： URAGAMI YASUSHI , YAMADA MASANORI , MATSUI MASAKI
IPC分类号： C30B29/36
摘要： PROBLEM TO BE SOLVED: To grow a SiC single crystal into a long form while preventing excessive enlargement of a diameter of a SiC single crystal due to corrosion of a support plate provided in a cap body in an embedded buried growth process.
SOLUTION: A TaC coating 26 is formed to cover an annular eave part 25. This prevents corrosion and resulting holes of the annular eave part 25 or the back face of a support plate 23a by sublimated gas. Since the inner wall face of the annular eave part 25 is also coated with the TaC coating 26, corrosion from this part by the sublimated gas can be also prevented. Thereby, excessive enlargement of the diameter of a SiC single crystal 70 can be prevented and the SiC single crystal 70 can be grown into a long form.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了在嵌入式埋入生长工艺中防止由于设置在盖体中的支撑板的腐蚀而防止SiC单晶的直径的过度扩大而将SiC单晶生长成长形状。解决方案：形成TaC涂层26以覆盖环形檐部25.这样可以通过升华的气体来防止环形檐部25的腐蚀和所产生的孔或支撑板23a的背面。由于环形檐部25的内壁面也涂有TaC涂层26，所以也可以防止该部分由升华气体的腐蚀。因此，可以防止SiC单晶70的直径的过度增大，并且可以使SiC单晶70长成长。版权所有（C）2009，JPO＆INPIT

7. 发明专利

JP2009091172A Manufacturing apparatus for silicon carbide single crystal 有权
标题翻译：单晶碳化硅制造设备
公开(公告)号：JP2009091172A
公开(公告)日：2009-04-30
申请号：JP2007261127
申请日：2007-10-04
申请人： Denso Corp , 株式会社デンソー
发明人： URAGAMI YASUSHI , MATSUI MASAKI , YAMADA MASANORI
IPC分类号： C30B29/36
摘要： PROBLEM TO BE SOLVED: To grow a SiC single crystal into a long form while suppressing difficulty in growing a polycrystal inside a skirt-like cylindrical part in an embedded growth process.
SOLUTION: The apparatus has a structure including an annular eave part 25 inside a cylindrical part 23b of a support plate 23a and having no annular eave part 25 outside the cylindrical part 23b. Thereby, the temperature in a region inside the cylindrical part 23b of the support plate 23a can be controlled to be relatively lower than in a region outside the cylindrical part 23b of the support plate 23a, which suppresses difficulty in growing a polycrystal 45. Thereby, growing faces of the SiC single crystal 70 and the polycrystal 45 are made flat, which enables the SiC single crystal 70 to grow into a long form.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了在嵌入式生长工艺中抑制在裙状圆筒形部件内生长多晶体的困难，将SiC单晶生长成长形式。解决方案：该装置具有包括在支撑板23a的圆柱形部分23b内的环形檐部25并且在圆柱形部分23b外部没有环形檐部25的结构。由此，能够将支撑板23a的圆筒部23b内的区域的温度控制为比支撑板23a的圆筒部23b的外侧的区域内的温度低，抑制多晶45的生长困难。由此，使SiC单晶70和多晶体45的生长面平坦化，能够使SiC单晶70长成长。版权所有（C）2009，JPO＆INPIT

8. 发明专利

JP2009051701A Apparatus and method for producing silicon carbide single crystal 有权
标题翻译：用于生产碳化硅单晶的装置和方法
公开(公告)号：JP2009051701A
公开(公告)日：2009-03-12
申请号：JP2007221128
申请日：2007-08-28
申请人： Denso Corp , 株式会社デンソー
发明人： KONDO HIROYUKI , ONDA SHOICHI , MATSUI MASAKI
IPC分类号： C30B29/36 , C30B23/06
摘要： PROBLEM TO BE SOLVED: To obtain a long high-quality SiC single crystal.
SOLUTION: A graphite crucible 1 is arranged such that a central axis R2 of the graphite crucible 1 is shifted by a certain distance L relative to a central axis R1 of a rotating device 5 or a heating device 6, and a region 4b in which screw dislocation can occur in a SiC single crystal substrate 3 is in agreement with the central axis R1 of the rotating device 5 and the heating device 6. Thereby, when growing up a SiC single crystal 4 on the SiC single crystal substrate 3, it is possible to prevent that the region 4b in which screw dislocation can occur in the SiC single crystal 4 have a higher temperature than the region surrounding the above region. Thus, the growth of a long SiC single crystal 4 becomes possible, and it also becomes possible to obtain many high-quality crystals having a large diameter.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：获得长质量的SiC单晶。解决方案：石墨坩埚1被布置成使得石墨坩埚1的中心轴线R2相对于旋转装置5或加热装置6的中心轴线R1偏移一定距离L，并且区域4b 其中在SiC单晶衬底3中发生螺旋位错与旋转装置5和加热装置6的中心轴R1一致。因此，当在SiC单晶衬底3上生长SiC单晶4时，可以防止在SiC单晶4中发生螺旋位错的区域4b的温度比围绕上述区域的区域高。因此，长的SiC单晶4的生长成为可能，并且也可以获得许多具有大直径的高品质晶体。版权所有（C）2009，JPO＆INPIT

9. 发明专利

JP2009023880A Apparatus for manufacturing silicon carbide single crystal 有权
标题翻译：制造单晶碳化硅的装置
公开(公告)号：JP2009023880A
公开(公告)日：2009-02-05
申请号：JP2007189567
申请日：2007-07-20
申请人： Denso Corp , 株式会社デンソー
发明人： KONDO HIROYUKI , MATSUI MASAKI
IPC分类号： C30B29/36
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing an SiC single crystal by a sublimation process capable of growing the SiC single crystal into long length while keeping the high quality thereof.
SOLUTION: This apparatus has a structure, in which a crucible upper part 12 can be pushed up by a lifting mechanism 5 in a state that the center of an SiC single crystal substrate 3 being a seed crystal is precisely aligned with the central axis of a graphite crucible 1, so that the SiC single crystal is grown in such a manner that when the diameter of the SiC single crystal 4 is enlarged according to the crystal growth, a seat 12a is pushed up together with the crucible upper part 12 during crystal growth to extend the narrowed distance between the surface of the SiC single crystal 4 and an SiC raw material powder 2, so that a difference between temperatures of the growth surface of the SiC single crystal 4 and the SiC raw material powder 2 is kept so as to keep a growth space between the SiC single crystal 4 and the SiC raw material powder 2.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种通过能够使SiC单晶长期生长并同时保持其高质量的升华方法来制造SiC单晶的方法。解决方案：该装置具有这样的结构，其中坩埚上部12可以在作为晶种的SiC单晶衬底3的中心与中心精确对准的状态下被提升机构5向上推动石墨坩埚1的轴线，使得SiC单晶以这样的方式生长，即当SiC单晶4的直径根据晶体生长而增大时，座12a与坩埚上部12一起被推起在晶体生长期间，为了延长SiC单晶4的表面与SiC原料粉末2之间的狭窄距离，使得SiC单晶4的生长面与SiC原料粉末2的温度之间保持不变以保持SiC单晶4与SiC原料粉末2之间的生长空间。版权所有（C）2009，JPO＆INPIT

10. 发明专利

JP2006121111A Mechanochemical polishing apparatus 有权
标题翻译：机械抛光装置
公开(公告)号：JP2006121111A
公开(公告)日：2006-05-11
申请号：JP2006003055
申请日：2006-01-10
申请人： Denso Corp , 株式会社デンソー
发明人： MATSUI MASAKI
IPC分类号： H01L21/304 , B24B37/00 , B24B37/20 , C09K3/14
摘要： PROBLEM TO BE SOLVED: To provide a mechanochemical polishing method and a mechanochemical polishing apparatus capable of efficiently polishing a hard material such as SiC even with a low processing pressure. SOLUTION: A polishing cloth 2 is stuck on a polishing platen 1. A wafer holding table 3 is arranged above the polishing platen 1, and a SiC wafer 4 is held on the wafer holding table 3. A liquid discharging machine 5 is installed above the polishing platen 1, and chemical liquid (obtained by dispersing chrome oxide abrasive grains in hydrogen peroxide water) 6 is dropped on the polishing cloth 2 from the liquid discharging machine 5. A surface of the SiC wafer 4 to be polished is pressed against the polishing cloth 2 stuck on the polishing platen 1 with a predetermined processing pressure. The wafer holding table 3 and the polishing platen 1 are then rotated to perform a polishing while dropping the chemical liquid 6 on the polishing cloth 2. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供即使在低加工压力下也能够有效地研磨SiC等硬质材料的机械化学研磨方法和机械化学研磨装置。解决方案：将抛光布2粘贴在研磨台板1上。晶片保持台3设置在研磨台板1的上方，SiC晶片4被保持在晶片保持台3上。排液机5是安装在研磨台板1上方，并且从液体排出机5将抛光布2上的化学液体（通过将氧化铬磨粒分散在过氧化氢水中得到）6滴落在研磨布2上。将待研磨的SiC晶片4的表面按压以预定的处理压力对着贴在研磨台板1上的抛光布2。然后，将晶片保持台3和研磨台板1旋转，进行抛光，同时将抛光布2上的化学液体6滴下。（C）版权所有（C）2006，JPO＆NCIPI

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