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    • 21. 发明专利
    • FORMING METHOD OF THIN FILM
    • JPH07216543A
    • 1995-08-15
    • JP713494
    • 1994-01-26
    • ASAHI GLASS CO LTD
    • OYAMA TAKUJISHIMIZU JUNICHI
    • C23C14/34
    • PURPOSE:To form a compd. thin film in a fast forming rate on a large-size substrate by continuously applying voltage on a target for a specified time in a mixture atmosphere of rare gas and reactive gas when the compd. thin film is formed by sputtering on a substrate surface. CONSTITUTION:When an SiO2 transparent film having low refractive index or Tie, transparent film having high refractive index is formed on a large substrate by sputtering, a target made of Ti conductive Si is disposed in a magnetron sputtering device with a mixture atmosphere comprising rare gas such Ar as the main component and reactive gas such as N2O, NO, NO2, O3 and N2. Negative voltage is intermittently applied on the target to discharge and the target is sputtered with Ar ion to form a thin film of Ti or Si on the substrate. The voltage applied on the target is switched 0.1-1000 msec on- time and 1-1000 msec off-time. During the voltage is applied, the Ti or Si thin film is formed, while during no voltage applied Si or Ti is oxidized or nitrided with the reactive gas. Thus, a transparent SiO2 or TiO2 thin film can be efficiently formed even on a large-size substrate.
    • 25. 发明专利
    • ULTRAVIOLET SCREENING GLASS
    • JPH03218822A
    • 1991-09-26
    • JP22449389
    • 1989-09-01
    • ASAHI GLASS CO LTD
    • ANDO HIDEKAZUOYAMA TAKUJI
    • B32B7/02B32B9/00C03C17/34
    • PURPOSE:To manufacture an ultraviolet screening glass of superior durability and high visibility beam transmittance and high radiation refractive index by composing high refractive index films or low refractive index films forming an air side outermost layer composed of an oxide containing at least one of Zr, Ti, Hf, Sn, Ta and Bi and at least one of B, Si and P. CONSTITUTION:An ultraviolet screening glass is formed by laminating high refractive index films and low refractive index films alternately on a transparent base. The transparent base 1 is composed of glass, plastic or the like. It is preferable to compose high refractive index films 2, 4, 6, 8, 10 and 12 of an oxide composed mainly of at least one kind of Zr, Ti, Hf, Sn, Ta and bi and at least one kind of B, Si and P, and in the case that an air side outermost layer is not formed with the high refractive index films, the high refractive index films can be composed of ZrO2, TiO2, HfO2, SnO2, Ta2O5, Bi2O3 and the like stabilized by ZrO2 and Y2O3. The material for the low refractive index films 3, 5, 7, 9, 11 and 13 is not limited, and particularly the air side outermost layer 13 should be composed of low refractive index oxidized films containing at least one kind of Zr, Ti, Hf, Sn, Ta and Bi and at least one kind of B, Si and P.
    • 27. 发明专利
    • ION PLATING METHOD
    • JPH02228469A
    • 1990-09-11
    • JP4857189
    • 1989-03-02
    • ASAHI GLASS CO LTD
    • KOJIMA HIROYASUSUZUKI KOICHIOYAMA TAKUJIHASHIMOTO NAOKI
    • C23C14/32C23C14/08
    • PURPOSE:To form a uniformly vapor deposited film on a large-area substrate surface with an ion plating method utilizing gaseous He by deforming arc discharge plasma flow to a sheet shape by a magnetic field means, then irradiating raw materials for vapor deposition to evaporate the materials. CONSTITUTION:The large-area substrate 7, such as glass sheet, is disposed in a vacuum chamber 3 and the raw materials 10 to be evaporated, such as metals and alloys and the oxide, boride, carbide, silicide, nitride, etc., thereof, are put into a hearth 2 as anode. The high density plasma flow 8 formed by the arc discharge which is generated by the gaseous He from a plasma generating source 1 is drawn out by an air core coil 6 into the vacuum chamber 3 and further, the N pole surface of a pair of permanent magnets 6 are disposed to face each other to deform the plasma flow 8 to the sheet shape parallel with the hearth 2 and the substrate 7. The plasma flow is bent about 900 in the magnetic field generated by the permanent magnet 9 and is focused onto the hearth 2 to heat and evaporate the raw materials to be evaporated in the hearth 2. The vapor deposited film having the uniform thickness is thus formed on the large-area glass substrate 7.
    • 28. 发明专利
    • ION PLATING METHOD
    • JPH02101160A
    • 1990-04-12
    • JP25092488
    • 1988-10-06
    • ASAHI GLASS CO LTD
    • KOJIMA HIROSHIOYAMA TAKUJISUZUKI KOICHIHASHIMOTO NAOKI
    • C23C14/32
    • PURPOSE:To efficiently and uniformly form a high-quality thin film over a large area by deforming arc discharge plasma flow to a sheet shape by a magnetic field, then further bending the plasma flow by the magnetic field of a permanent magnet so as to introduce this plasma flow onto a hearth. CONSTITUTION:A DC power source 4 for plasma generation is impressed between an arc discharge plasma flow source 1 and an anode (hearth) 2 to execute arc discharge, by which high-density plasma flow is formed. This plasma flow is drawn out of an air core coil 6 into a vacuum chamber 3 and is deformed to the sheet plasma 8 by a pair of the permanent magnets 5. The sheet plasma 8 is bent about 90 deg. and is focused to the hearth 2 by the magnetic field of the permanent magnet 9 installed under the hearth 2 to evaporate the evaporating raw material 10 in the hearth 2 and to form the film on a substrate 7. The permanent magnet 9 is formed to at least the same length as the length of the hearth 2 in the transverse direction of the sheet plasma 8 at this time. The permanent magnet 9 and the hearth 2 are formed to at least the same length as the length of the base body 7 in the transverse direction of the sheet plasma 8.
    • 29. 发明专利
    • HIGH-SPEED SPUTTERING METHOD USING CYLINDRICAL CATHODE
    • JPH0273968A
    • 1990-03-13
    • JP22473488
    • 1988-09-09
    • ASAHI GLASS CO LTD
    • SUZUKI KOICHIKOJIMA HIROYASUOYAMA TAKUJI
    • C23C14/34
    • PURPOSE:To carry out sputtering by arranging a cylindrical cathode having a cooling mechanism inside and a target material on its surface close to sheet plasma, and continuously or intermittently rotating the cathode on its axis. CONSTITUTION:A magnetic field 7 leading to an anode 2 from a plasma source 1 is formed by >=2 air-core coils 6, and a high-density plasma current by an arc discharge is drawn into a vacuum chamber 3. A couple of permanent magnets 8 are arranged between a plasma gun and a sputtering region with the like-pole surfaces opposed to each other to enclose the plasma with the target and substrate, and with the pole surfaces of the permanent magnets in parallel with the target surface or the surface of the substrate 9 to form the plasma into a sheet shape, and sheet-shaped high-density plasma 11 is formed. The cylindrical cathode 10 and the substrate 9 are arranged to enclose the sheet plasma 11, and a sputtering voltage is impressed on the cathode 10 by a sputtering power source 12 so that the cathode 10 is negatively charged with respect to the plasma 11.