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11. 发明专利

JP2013532934A Power conversion circuit including a high electron mobility transistor for switching and rectifying 有权
公开(公告)号：JP2013532934A
公开(公告)日：2013-08-19
申请号：JP2013519788
申请日：2011-07-13
申请人：クリーインコーポレイテッドCree Inc.
发明人：ロバートジョセフキャラナン
IPC分类号： H02M3/155 , H01L21/338 , H01L29/778 , H01L29/812 , H02M1/00
CPC分类号： H02M1/08 , H02M3/33507 , H02M2001/0003 , H03K17/567 , H03K17/74
摘要：電力変換回路が、蓄積コンポーネントと、第１の電界効果トランジスタを含み、第１及び第２のバイアス状態を有する整流コンポーネントと、第２の電界効果トランジスタを含み、第１及び第２の動作状態を有するスイッチとを含む。第１及び第２の電界効果トランジスタは、高電子移動度トランジスタ（ＨＥＭＴ）である。
【選択図】図１

12. 发明专利

JPWO2011136003A1 スイッチング回路有权
公开(公告)号：JPWO2011136003A1
公开(公告)日：2013-07-18
申请号：JP2012512752
申请日：2011-04-08
申请人：本田技研工業株式会社
发明人：真生関 , 真生関 , 貞夫篠原 , 貞夫篠原
IPC分类号： H02M7/5387
CPC分类号： H02M7/53873 , H02P27/08 , H03K17/08142 , H03K17/145 , H03K17/74 , H03K2017/0806 , H03K2217/0036 , Y02B70/1483 , Y10T307/747
摘要： 2つのスイッチング素子(10a、10b)が接続され、各スイッチング素子に並列に逆導通素子(14a、14b)が接続されたアームを有するスイッチング回路であって、前記スイッチング素子はSiC半導体であり;前記逆導通素子に転流電流が流れる際に、この逆導通素子が並列接続された前記スイッチング素子をON作動させる。

13. 发明专利

JP2012533965A Fast rectifier circuit 审中-公开
公开(公告)号：JP2012533965A
公开(公告)日：2012-12-27
申请号：JP2012521635
申请日：2010-05-17
申请人：クリーインコーポレイテッドCree Inc.
发明人：ロバートカラナン , ファティマフスナ
IPC分类号： H03K17/04 , H02M7/12 , H03K17/56
CPC分类号： H03K17/302 , H03K17/0406 , H03K17/567 , H03K17/74 , H03K2017/6875
摘要： Provided is a rectifier circuit that includes a depletion mode semiconductor having an output connected to a rectified signal output node of the rectifier circuit and a hot carrier semiconductor diode having a cathode connected to a source node of the depletion mode semiconductor and an anode connected to a gate node of the depletion mode semiconductor. The rectifier may include an alternating current (AC) input node that is connected to the anode of the hot carrier semiconductor diode and the gate node of the depletion mode semiconductor and that is configured to receive an AC input signal.

14. 发明专利

JP2012249090A High-frequency switch 有权
标题翻译：高频开关
公开(公告)号：JP2012249090A
公开(公告)日：2012-12-13
申请号：JP2011119379
申请日：2011-05-27
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： SAMEJIMA FUMINORI , KOHAMA MASAHIKO , MORIMOTO TAKAO
IPC分类号： H01P1/15 , H04B1/44
CPC分类号： H03K17/74 , H01P1/15 , H03K17/76 , H04B1/48
摘要： PROBLEM TO BE SOLVED: To provide a small high-frequency switch that does not require a control signal from the outside.SOLUTION: A high-frequency switch has: a first anti-parallel diode having one end connected with a first high-frequency signal input/output terminal and the other end connected to a second high-frequency signal input/output terminal; a first transmission line having one end connected to the first high-frequency signal input/output terminal and the other end connected to a third high-frequency signal input/output terminal, and having an electric length of 1/4 wavelength in a use frequency; and a second anti-parallel diode having one end connected to the third high-frequency signal input/output terminal and the other end connected to the ground. The first and second anti-parallel diodes are in a conduction state at power equal to or more than predetermined high-frequency power.
摘要翻译：要解决的问题：提供不需要来自外部的控制信号的小型高频开关。解决方案：高频开关具有：第一反并联二极管，其一端与第一高频信号输入/输出端连接，另一端连接到第二高频信号输入/输出端; 第一传输线，其一端连接到第一高频信号输入/输出端，另一端连接到第三高频信号输入/输出端，并且在使用频率中具有1/4波长的电长度 ; 以及第二反并联二极管，其一端连接到第三高频信号输入/输出端子，另一端连接到地。第一和第二反并联二极管的功率处于等于或大于预定高频功率的导通状态。版权所有（C）2013，JPO＆INPIT

16. 发明专利

JP2010187533A Bidirectional switch circuit and power converter having the same 有权
标题翻译：双向开关电路和电源转换器
公开(公告)号：JP2010187533A
公开(公告)日：2010-08-26
申请号：JP2010007742
申请日：2010-01-18
申请人： Daikin Ind Ltd , ダイキン工業株式会社
发明人： KAWASHIMA REIJI , HISAYAMA KAZUSHI , HIBINO HIROSHI , SEKIMOTO MORIMITSU , MAEDA TOSHIYUKI , MATSUNO SUMIKAZU
IPC分类号： H02M1/08 , H02M5/297 , H02M7/12
CPC分类号： H02M1/4208 , H02M3/33576 , H02M5/458 , H03K17/664 , H03K17/6874 , H03K17/74 , H03K2217/0009 , H03K2217/0081 , Y02B70/126
摘要： PROBLEM TO BE SOLVED: To obtain a structure that achieves bidirectional conduction by a simple drive control of a switching element in a bidirectional switch circuit where two switching elements are connected so as to be bidirectionally conductive while reducing the number of components, simplifying the circuit, and reducing the loss of conduction. SOLUTION: Even if no ON-drive signal is input to a gate terminal (G1), a current is supplied from a source (S1) to a drain (D) of a switching element (SW1) out of two switching elements (SW1 and SW2) mutually connected in series, where the reverse voltage (the voltage on the source (S1) side is higher than the voltage on the drain (D) side) is applied. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了获得通过简单的驱动控制实现双向导通的结构，其中双向开关电路中的开关元件的两个开关元件被连接以便双向导通，同时减少了元件的数量，简化了电路，并减少传导损耗。解决方案：即使没有将ON驱动信号输入到栅极端子（G1），电流从两个开关元件（SW1）的源极（S1）到漏极（D）提供，（S1）侧的电压高于漏极（D）侧的电压的反向电压（SW1和SW2）串联连接。版权所有（C）2010，JPO＆INPIT

17. 发明专利

JP2009159222A Switching device 有权
标题翻译：切换设备
公开(公告)号：JP2009159222A
公开(公告)日：2009-07-16
申请号：JP2007334074
申请日：2007-12-26
申请人： Sanken Electric Co Ltd , サンケン電気株式会社
发明人： MACHIDA OSAMU , IWABUCHI AKIO
IPC分类号： H03K17/687 , H01L21/338 , H01L21/8234 , H01L27/06 , H01L27/088 , H01L27/095 , H01L29/778 , H01L29/812 , H03K17/10 , H03K17/693
CPC分类号： H03K17/6874 , H01L27/0605 , H01L29/0657 , H01L29/1075 , H01L29/2003 , H01L29/205 , H01L29/7787 , H01L29/7838 , H01L29/812 , H01L29/872 , H03K17/10 , H03K17/567 , H03K17/74 , H03K2017/6875
摘要： PROBLEM TO BE SOLVED: To request cost reduction and increase of high voltage resistance of a bidirectional switch. SOLUTION: A switching device 10 with a bidirectional switch function includes: a first and a second main terminals 11, 12; a normally-on type main semiconductor switching element 13 of a HEMT (High Electron Mobility Transistor) configuration; a first MOSFET (Metal Oxide Semiconductor Field Effect Transistor) 14 of a low voltage resistance normally-off type bonded between the first main terminal 11 and a first main electrode 20 of a main semiconductor switching element 13; a second MOSFET 15 of a low voltage resistance normally-off type connected between the second main terminal 12 and the main semiconductor switching element 13; a first and a second diodes 16, 17 connected in parallel in an inverse direction to the first and the second MOSFETs 14, 15; and a third and a fourth diodes 18, 19 connected between a gate electrode 22 of the main semiconductor switching element 13 and the first and the second main terminals 11, 12. The switching device 10 has a normally-off characteristic. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：要求降低成本并提高双向开关的高耐压性。解决方案：具有双向开关功能的开关装置10包括：第一和第二主端子11,12; HEMT（高电子迁移率晶体管）构造的常开型主半导体开关元件13; 在第一主端子11和主半导体开关元件13的第一主电极20之间接合的低电压电阻常闭型的第一MOSFET（金属氧化物半导体场效应晶体管）14; 连接在第二主端子12和主半导体开关元件13之间的低压电阻常闭型的第二MOSFET 15; 与第一和第二MOSFET 14,15反向并联连接的第一和第二二极管16,17; 以及连接在主半导体开关元件13的栅电极22与第一和第二主端子11,12之间的第三和第四二极管18,19.开关器件10具有常关特性。版权所有（C）2009，JPO＆INPIT

18. 发明专利

JP2009071956A Gate drive circuit 审中-公开
标题翻译：门控驱动电路
公开(公告)号：JP2009071956A
公开(公告)日：2009-04-02
申请号：JP2007236671
申请日：2007-09-12
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： HIYAMA KAZUAKI
IPC分类号： H02M1/08 , H02M7/5387 , H03K17/08 , H03K17/56
CPC分类号： H03K17/168 , H03K17/08128 , H03K17/163 , H03K17/284 , H03K17/567 , H03K17/74 , H03K2217/0036
摘要： PROBLEM TO BE SOLVED: To provide a gate drive circuit with an element improvded in switching characteristics wherein it is possible to arbitrarily determine the switching characteristics of the element, obtain a sufficient tolerance against short-circuiting, and suppress steady-state loss. SOLUTION: The gate drive circuit includes an on-side circuit that performs on-operation of the gate of a power switching element. The on-side circuit includes: a first on-side power supply circuit having a first on-power source for supplying first on-voltage, a first on-wiring, and a first on-switch controlled according to a gate driving signal and formed in the first on-wiring; and a second on-side power supply circuit having a second on-power source for supplying second on-voltage to be applied to the gate when the power switching element is in steady state, a second on-wiring, a second on-switch formed in the second on-wiring, and an on-side delay circuit that transmits the gate driving signal to the second on-switch with delay. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了提供具有改进的开关特性的元件的栅极驱动电路，其中可以任意地确定元件的开关特性，获得足够的短路容限，并抑制稳态损耗。解决方案：栅极驱动电路包括执行功率开关元件的栅极的接通操作的旁路电路。旁路电路包括：具有用于提供第一导通电压的第一导通电源的第一旁路电源电路，第一在线布线和根据栅极驱动信号控制的第一开关电路，并形成在第一次接线时; 以及第二旁路电源电路，具有第二导通电源，用于在功率开关元件处于稳定状态时提供要施加到栅极的第二导通电压，第二导通，形成第二导通开关在第二接线中，以及一个侧面延迟电路，其延迟地将栅极驱动信号传输到第二开关。版权所有（C）2009，JPO＆INPIT

19. 发明专利

JP2008288231A Light-emitting device 有权
标题翻译：发光装置
公开(公告)号：JP2008288231A
公开(公告)日：2008-11-27
申请号：JP2007128779
申请日：2007-05-15
申请人： Citizen Electronics Co Ltd , シチズン電子株式会社
发明人： BETSUDA SOHIKO , IMAI SADATO , FUKAZAWA KOICHI
IPC分类号： H01L33/56 , H01L33/62
CPC分类号： H03K17/12 , H01L2224/32225 , H01L2224/48091 , H01L2224/49113 , H01L2224/73265 , H03K17/74 , H01L2924/00014
摘要： PROBLEM TO BE SOLVED: To provide a highly reliable light-emitting device having favorable balance in current by configuring a light-emitting diode package in such a way that various kinds of light-emitting diode chips are connected in parallel while suppressing variations in VF characteristics of the diode chips which have not been covered by a prior art. SOLUTION: The light-emitting diode package is configured so that the light-emitting diode chips are connected in parallel while using two characteristic conditions crossing through three points A, B and C as a selection reference in forward voltage-forward current characteristics. The current at the point B is set at 1/2 of a rated current, and thus, the current of each light-emitting diode chip in the light-emitting diode package satisfies the current value of ≥50% of the rated current. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种高可靠性的发光装置，其通过配置发光二极管封装使电流平衡良好，使得各种发光二极管芯片并联连接，同时抑制变化在现有技术未被覆盖的二极管芯片的VF特性中。
解决方案：发光二极管封装被配置为使得发光二极管芯片并联连接，同时使用穿过三个点A，B和C的两个特征条件作为正向电压 - 正向电流特性中的选择参考。点B处的电流设定为额定电流的1/2，因此，发光二极管封装中的各发光二极管芯片的电流满足电流值≥50％的电流值。版权所有（C）2009，JPO＆INPIT

20. 发明专利

JP2008258816A Semiconductor device, driving ability switching method of semiconductor device, and system including semiconductor device 审中-公开
标题翻译：半导体器件，半导体器件的驱动能力切换方法和包括半导体器件的系统
公开(公告)号：JP2008258816A
公开(公告)日：2008-10-23
申请号：JP2007097349
申请日：2007-04-03
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： OKINOI MICHINORI
IPC分类号： H03K19/0175
CPC分类号： H03K17/12 , H03K17/122 , H03K17/161 , H03K17/6872 , H03K17/74 , H03K19/017581 , H03K2217/0036
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device capable of turning the driving ability of the output terminal of the semiconductor device on the transmission side to the driving ability sufficient for the semiconductor device on the reception side.
SOLUTION: The semiconductor device 100 is provided with a circuit 120 for changing the driving ability of a terminal 130 on the basis of control information 111 inside the device. When there are a plurality of semiconductor devices 160 and 107 on the reception side, since the driving ability of the output terminal 130 can be optimally set for each of them, the number of additional components such as a damping resistor needed before is reduced. Thus, a system cost is reduced or a mounting space is reduced or the reliability of the entire system is improved.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：解决的问题：提供能够将发送侧的半导体装置的输出端子的驱动能力转换为对接收侧的半导体装置充分的驱动能力的半导体装置。解决方案：半导体器件100设置有用于基于设备内的控制信息111来改变终端130的驱动能力的电路120。当在接收侧有多个半导体器件160和107时，由于输出端子130的驱动能力可以被最佳地设定，所以减少了前面所要求的阻尼电阻等附加部件的数量。因此，降低了系统成本或降低了安装空间或提高了整个系统的可靠性。版权所有（C）2009，JPO＆INPIT

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