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11. 发明专利

JPH11162700A VACUUMIZING METHOD FOR CURVED PASSAGE FOR CHARGED PARTICLES 失效
公开(公告)号：JPH11162700A
公开(公告)日：1999-06-18
申请号：JP33190097
申请日：1997-12-02
申请人： ULVAC KURAIO KK , ULVAC CORP
发明人： FURUYA SHINJI , TERAJIMA MITSUSHINA , MORIMOTO HIDETOSHI , NISHIBASHI TSUTOMU , KASHIMOTO KAZUHIRO , SAKURADA YUZO
IPC分类号： H05H7/14 , H01J37/02 , H05H13/04
摘要： PROBLEM TO BE SOLVED: To enhance vacuumizing of a cryopump by exhausting scattered gas molecules from an end station using a first cryopump, exhausting gas molecules discharged parallel with the wall surface using a second cryopump, and thereby vacuumizing the inside of the passage to a high degree of vacuum. SOLUTION: When a resist is coated to a board, much impurity gas is generated with incidence of an ion beam, and the gas molecules are going to diffuse into a passage 1, where those molecules diffused upon bombarding the wall surface of the passage 1 are exhausted upon flying into the suction hole of the first cryopump 4 opening large while it is surrounding the wall surface, so that diffused gas molecules from elsewhere can be exhausted with a high efficiency even if the passage is curved or non-curved. Other gas molecules diffusing following a track parallel with the wall surface reach the curved part of a magnet chamber 3, where the suction hole of the second cryopump 5 exists, so that the molecules fly into the hole and are exhausted by the pump 5.

12. 发明专利

JPH10241592A ION BEAM IRRADIATION DEVICE 失效
公开(公告)号：JPH10241592A
公开(公告)日：1998-09-11
申请号：JP4401697
申请日：1997-02-27
申请人： ULVAC CORP
发明人： SOTOHANE YOSHIYUKI , HAYASHI TOSHIO , ITO MASAHIRO , OGATA SEIJI , SAKURADA YUZO , UCHIDA TAIJIROU
IPC分类号： G03F7/20 , H01J27/18 , H01J37/08 , H01J37/317 , H01L21/027 , H01L21/203 , H01L21/265
摘要： PROBLEM TO BE SOLVED: To provide the plasma uniformity of a drawing electrode by mounting a plasma source as a plasma generation source based on magnetic neutral conductor discharging and controlling the generation position of a magnetic neutral conductor. SOLUTION: A high frequency electric field is provided into a vacuum from the outside of the dielectric cylindrical partition wall of a cylindrical plasma generation chamber 3, gas introduced into the vacuum is discharged and, by controlling the position of a magnetic neutral conductor 8 by three coils 5, 6 and 7, a plasma is controlled. In the exit of a plasma communicated from the plasma generation chamber 3 to a substrate treating chamber 4, a first electrode 11 having a number of orifices of the same potential as that of the plasma generation chamber 3 is disposed, orifices coaxial to these orifices are provided in its outside and second and third electrodes 12 and 13 are provided. Ions entering from the plasma generation chamber 3 to the orifices of the first electrode 11 are drawn out by an electric field between the first and second electrodes 11 and 12. The drawn-out ions are projected to a substrate 15 on a substrate holder 14 maintained at a grounding potential.

13. 发明专利

JPH06281601A ION BEAM SURFACE ANALYSIS 失效
公开(公告)号：JPH06281601A
公开(公告)日：1994-10-07
申请号：JP9235293
申请日：1993-03-26
申请人： ULVAC CORP
发明人： HIROSE MASATAKA , YOKOYAMA ARATA , ZUBINIEFU RAJIMUSUKII , AGAWA YOSHIAKI , SAKURADA YUZO
IPC分类号： G01N23/225
摘要： PURPOSE:To measure trace impurities contained in an extremely shallow part of a sample by setting the energy region of an ion beam at an intermediate region and detecting scattered particles with a semiconductor detector. CONSTITUTION:The output of a semiconductor detector 33 is connected to a high-voltage cable 34 and a current introducing terminal 35 fixed to the wall section of an analysis chamber 13 and further connected to a preamplifier through a high-voltage signal cable 36. The detector 33 is fitted to a rotatable arm 39 and, as the arm 39 is rotated in accordance with a prefixed program, the detector 33 measures energy spectra at every prescribed angle. When the current amount of an ion beam 31 is maintained at a fixed level by monitoring the beam 31 with a charge integrator during the measurement, the intensity distribution of scattered particles around the center of a sample 16 and the two-dimensional information about the energy spectra at each point can be measured in a short time. When the energy of the beam 31 is lowered to a 200keV area, the detector 33 which receives particles scattered by the sample can detect trace impurities contained in an extremely shallow part of the sample 16 near the surface in a short time even when the content is very small.

14. 发明专利

JPH04230943A ION IMPLANTER 失效
公开(公告)号：JPH04230943A
公开(公告)日：1992-08-19
申请号：JP8104691
申请日：1991-01-20
申请人： ULVAC CORP
发明人： SAKURADA YUZO , TSUKAGOSHI OSAMU
IPC分类号： C23C14/48 , H01J37/147 , H01J37/317 , H01L21/265
摘要： PURPOSE:To prevent the reduction of the characteristic of a substrate implanted with ions by applying the voltage sweep-deflecting an ion beam to electrodes of the second multi-pole electrostatic deflector so that the direction of the emitted ion beam is invariably set to a constant angle against the substrate. CONSTITUTION:An ion beam 8 emitted from an ion source 1 is separated by a mass separator 2, accelerated by an accelerating tube 3, focused by a focusing lens 4, deflected by the first octuple-pole electrostatic deflector 5 by 7 deg., then sweep-deflected in the X and Y directions. The ion beam 8 is sweep-deflected by the second octuple-pole deflector 6 in the X and Y directions, the voltage applied to the deflector 6 is controlled, the direction of the emitted ion beam 8 is set to a constant angle against a substrate 7, and ions are invariably implanted into the substrate 7 from the same direction.

15. 发明专利

JPH046739A ION IMPLANTATING DEVICE 失效
公开(公告)号：JPH046739A
公开(公告)日：1992-01-10
申请号：JP10645390
申请日：1990-04-24
申请人： ULVAC CORP
发明人： TSUKAGOSHI OSAMU , SAKURADA YUZO , KATAGAWA TAKESHI
IPC分类号： H01J37/317 , H01L21/265
摘要： PURPOSE:To perform ion implantation via the scanning with parallel scan beams fed to a large-area ion radiation face at the same incident angle by providing two multi-pole electrostatic deflectors with the preset structure mode. CONSTITUTION:Ions generated by an ion source 1 are removed with neutral particles via a two-pole electrostatic deflector 5 through a mass separator 2 and implanted to a substrate 8 through multi-pole electrostatic deflectors 6, 7. The first multi-pole electrostatic deflector 6 of two multi-pole electrostatic deflectors has four or more poles. The other second multi-pole electrostatic deflector 7 is arrange around the same optical axis behind the first electrostatic deflector 6, it has poles twice the number of poles of the first electrostatic deflector 6, and it deflects the ion beam deflected by the first electrostatic deflector 6 in the invariably constant direction against the surface of the substrate 8. The uniform range of the electric field in the cross section of the deflector is increased, and parallel scanning can be performed on the large substrated 8.

16. 发明专利

JPH02260361A ION IMPLANTATION APPARATUS 失效
公开(公告)号：JPH02260361A
公开(公告)日：1990-10-23
申请号：JP8175789
申请日：1989-03-31
申请人： ULVAC CORP
发明人： SAKURADA YUZO , TSUKAGOSHI OSAMU , FUDA TAKENOBU , HONDA SHIGEKI , SAITO MASAKI
IPC分类号： H01J37/20 , H01J37/317 , H01L21/265
摘要： PURPOSE:To carry out uniform ion implantation into trench inner walls by providing at least one of a tilting function to a sample to be ion-implanted, a rotating function, and olifra adjusting function. CONSTITUTION:A platen 9 is tilted by a motor 11 for tilting installed outside of an ion implantation chamber 8 through a rotary shaft 10 and the rotary position of the motor 11 for tilting is detected by a rotary encoder 12, and the detected rotary position is put as a feedback in the motor 11 for tilting and the rotation of the motor 11 is controlled to become a prescribed rotation. The speed of rotation of the platen 9 is measured by an origin sensor 16 and the origin of the rotary of the platen 9 is determined according to the measured value and thus the operation of a motor 14 for rotation is controlled. The orientation flat position of a sample (wafer) which is mounted on the platen 9 and ion-implanted is detected by an orientation flat sensor 15 and orientation flat position adjustment is carried out basing on the detected result.

17. 发明专利

JPS62195842A HIGH CURRENT ION IMPLANTING APPARATUS 失效
公开(公告)号：JPS62195842A
公开(公告)日：1987-08-28
申请号：JP3749286
申请日：1986-02-24
申请人： ULVAC CORP
发明人： SAKURADA YUZO
IPC分类号： H01L21/265 , H01J37/317
摘要： PURPOSE:To make it possible to observe the form variation of ion beams, by furnishing a movable probe in the passage of ion beams to a wafer, and arranging a display unit to display the beam current flowing to the probe. CONSTITUTION:In the ion beam passage 17 between an analyzer magnet 6 and a wafer 7, a probe 9 made of tungsten is furnished to move freely, and a display unit 10 is furnished to display the moving position of the probe 9 and the beam current flowing to the probe 9 at the position. If any variation is produced, the operational condition of the ion implanting apparatus is adjusted to return to the original condition. If the ion beam current is converted to the form shown as the curve C while the ion implanting is carried out in the ion beam section form as the curve A, the position of ion beam pickup electrodes 3a and 3b of the ion implanting apparatus are adjusted to restore to the curve A, and the uneven ion distribution on the wafer 7 can be prevented. In such a way, the variation of the section form and the direction can be observed.

18. 发明专利

JP2006324404A SURFACE PROCESSING DEVICE AND SURFACE PROCESSING METHOD 审中-公开
公开(公告)号：JP2006324404A
公开(公告)日：2006-11-30
申请号：JP2005145394
申请日：2005-05-18
申请人： ULVAC CORP
发明人： SAKURADA YUZO , YOKOO HIDEKAZU , NISHIBASHI TSUTOMU , OGATA SEIJI , SEKIGUCHI MASAYUKI
IPC分类号： H01L21/265 , H01J37/317 , H01L21/22
摘要： PROBLEM TO BE SOLVED: To provide a composite surface processing device that serves as an ion implantation device using an ion beam and also as a plasma doping device at the same time, and carries out a low-energy ion doping process using an ion beam with high accuracy and high efficiency. SOLUTION: The surface processing device 10 is equipped with: an ion implantation unit 31 and a plasma doping unit 21, and the ion implantation unit 31 is equipped with a decelerator 37 decelerating ions, a deflector 38 deflecting the decelerated ions toward a stage 4, and a bias power supply 9 guiding ions to the stage 4. The deflector 38 removes neutral particles from the ion beam, and the bias power supply 9 attracts an ion beam of low-energy emitted from the deflector 37 to a wafer W. By this setup, a low-energy ion doping process is carried out by the use of the ion implantation unit 31 with high impurity and high efficiency. COPYRIGHT: (C)2007,JPO&INPIT

19. 发明专利

JPH11166476A CRYOPUMP OF DIFFERENTIAL EXHAUST TYPE 失效
公开(公告)号：JPH11166476A
公开(公告)日：1999-06-22
申请号：JP33189797
申请日：1997-12-02
申请人： ULVAC KURAIO KK , ULVAC CORP
发明人： FURUYA SHINJI , TERAJIMA MITSUSHINA , MORIMOTO HIDETOSHI , NISHIBASHI TSUTOMU , KASHIMOTO KAZUHIRO , SAKURADA YUZO
IPC分类号： F04B37/08
摘要： PROBLEM TO BE SOLVED: To provide a cryopump of differential exhaust type which is directly attached to a place requiring air exhaustion without arranging a particular piping for the pump and can satisfactorily exert a large exhausting speed inherent in a cryopump. SOLUTION: The shield 6 of a cryopump is formed in a cylinder equipped with openings 11a and 11b in the side faces 6a and 6b penetrated by the center shaft 10, and in a space 13 bounded by the shield 6 and baffles 9 cryopanels 8 are furnished in such a way as surrounding at least one part of a passage 12 in the shield 6 tying the two openings by the baffle 9. The shield 6 is made in a square or circular cylinder having rectangular or circular openings in the side faces, and the baffles 9 are positioned on the confronting side face of the pas age inside the shield 6 tying the two openings and are coupled together by a heat conducting member 14, and the cryopanels 8 in multiple stages and rows extending in the direction crossing the center shaft are coupled together by the heat conducting member 14 in the space bounded by the shield 6 and baffles 9.

20. 发明专利

JPH08212965A ION IMPLANTING DEVICE 失效
公开(公告)号：JPH08212965A
公开(公告)日：1996-08-20
申请号：JP3467595
申请日：1995-01-31
申请人： ULVAC CORP
发明人： OGATA SEIJI , SAKURADA YUZO , SENDA NAKAYA , HISAMUNE TAKESHI
IPC分类号： C23C14/48 , H01J37/05 , H01J37/317 , H01L21/265
摘要： PURPOSE: To provide an ion implating device whereby an ion beam, having uniform density of a space charge, regardless of a level of an ion current, can be operated at a high speed onto a substrate. CONSTITUTION: A deflection chamber 7 is provided in a chamber part as partly a vacuum chamber in the inside of a deflecting electromagnet 6, to apply electric field modulation to this deflection chamber. In the vicinity of an outlet in the upstream/downstream, electrodes 5, 8 are provided, to give a prescribed magnetic field in a deflecting electromagnet part by these electrodes, also to sufficiently give negative potential in both sides of this magnetic field. In this way, while holding space charge neutralization of an ion current, or an electron from this deflecting electromagnet 6 is sprung out in the upstream/downstream so as to prevent worsening the space charge neutralization, and a deflecting angle in a space is changed by the electric field modulation, so that scanning can be made in uniform ion density at a high speed onto a substrate 10.

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