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1. 发明专利

JPS625547A APPARATUS FOR CHECKING FOREIGN MATTER ON SUBSTRATE SURFACE 失效
公开(公告)号：JPS625547A
公开(公告)日：1987-01-12
申请号：JP14262885
申请日：1985-07-01
申请人： ULVAC CORP
发明人： MAEHANE YOSHIYASU , YAMAKAWA HIROYUKI , YOSHIKAWA HIDEJI , YANAGIDA HIROSHI , MATSUMI YUTAKA , KATAGAWA TAKESHI , KOMIYA MUNEHARU
IPC分类号： G01B15/00 , G01N21/88 , G01N21/94 , G01N21/956 , H01J37/22 , H01J37/28 , H01L21/28 , H01L21/285 , H01L21/66
摘要： PURPOSE:To quickly check foreign matters by scanning the surface of substrate placed within a vacuum reservior with laser beam, detecting the light beam reflected in scatter by foreign matter with a detector and then shifting a substrate to the check position by electronic microscope in accordance with such detected signal. CONSTITUTION:The surface of substrate 4 of semiconductor, etc. placed on a movable table 2 in a varrum reservior 1 is scanned in the X, Y directions by the laser beam through a laser beam source 6 and a scanner 7. If there are foreign matters on the substrate 4, scattering of the laser beam is detected by the detector 8 and location of such foreign matters is stored in a computer 11 in accordance with such detected signal. Next, the movable table 2 is driven, after the scanning, in accordance with such stored data until the foreign matters on the substrate are set within the sight of the scanning type electronic microscope 5 in order to check shape and size of foreign matters. Accordingly, foreign matters can be easily and quickly checked within the vacuum process line, improving the manufacturing yield of semiconductors.

2. 发明专利

JPH04149931A SHEET PLASMA FORMING ION SOURCE 失效
公开(公告)号：JPH04149931A
公开(公告)日：1992-05-22
申请号：JP27584890
申请日：1990-10-15
申请人： ULVAC CORP
发明人： FUKUI RYOTA , TAKAGI KENICHI , KATAGAWA TAKESHI , TAKAYAMA KAZUO
IPC分类号： H01J27/02 , H01J37/08
摘要： PURPOSE:To easily form the cusp magnetic field near a cathode and an anode and easily disassemble an ion source when electromagnets are removed by removably arranging two electromagnets wound with coils around U-shaped pole pieces on both sides of sheet plasma electrodes arranged on a straight line. CONSTITUTION:Many plasma electrodes 4 each provided with a slit 3 made of long sides and short sides at the center section are arranged on a straight line in the Z-axis, i.e., in the horizontal direction, via an insulator at the opening on the tip of a cathode storage chamber 2 arranged with a cathode 1 in it. The slits 3 of the electrodes 4 are connected, and the chamber 2 and a plasma forming passage 5 are arranged on a straight line. An anode 7 having a slit 6 with the same shape as that of the slit 3 at the center section can be arranged at the tip of the electrodes 4 via an insulator, and the slits 6, 3 are located on a straight line. When currents in the same direction are fed to coils 12a, 12b of two electromagnets 13a, 13b, the uniform magnetic field is generated in the long-side direction.

3. 发明专利

JPS61250949A ACCELERATION TUBE 失效
公开(公告)号：JPS61250949A
公开(公告)日：1986-11-08
申请号：JP9104885
申请日：1985-04-30
申请人： ULVAC CORP
发明人： TERASAWA HISAHIRO , TSUKAGOSHI OSAMU , KATAGAWA TAKESHI
IPC分类号： C23C14/48 , H01J37/06 , H01J37/317
摘要： PURPOSE:To eliminate the inter-electrode shortcircuit while to enable replacement of electrode by dismountably fixing a plurality of bored electrodes to an insulator tube while curving such that the inner wall of the insulator tube can not be viewed from the inner edge section thus forming an acceleration tube. CONSTITUTION:A plurality of bored electrodes 21-23 curved symmetrically against Z-axis such that the inner wall of an insulator tube 1 is never viewed or only partially viewed are arranged in said insulator tube 1 made of alumina while having grooves in the outercircumferential face. Each electrode 2 is arranged with specific interval at the inner edge section corresponding with the ion beam energy while fixed dismountably to the insulator tube 1 thus to form an acceleration tube to be employed in an ion implanter. Consequently, inter- electrode shortcircuit due to contamination of spattering particles can be prevented resulting in facilitation of replacement of electrode upon abrasion and handling performance.

4. 发明专利

JPH0527939B2 失效
公开(公告)号：JPH0527939B2
公开(公告)日：1993-04-22
申请号：JP14262885
申请日：1985-07-01
申请人： ULVAC CORP
发明人： MAEHANE YOSHASU , YAMAKAWA HIROYUKI , YOSHIKAWA HIDEJI , YANAGIDA HIROSHI , MATSUMI YUTAKA , KATAGAWA TAKESHI , KOMYA MUNEHARU
IPC分类号： G01B15/00 , G01N21/88 , G01N21/94 , G01N21/956 , H01J37/22 , H01J37/28 , H01L21/28 , H01L21/285 , H01L21/66

5. 发明专利

JPH0494049A ACCELERATING TUBE FOR LARGE CURRENT ION IMPLANTATION DEVICE 失效
公开(公告)号：JPH0494049A
公开(公告)日：1992-03-26
申请号：JP21017190
申请日：1990-08-10
申请人： ULVAC CORP
发明人： TSUKAGOSHI OSAMU , KATAGAWA TAKESHI , SAKURADA YUZO , HAYASHI TOMONAO
IPC分类号： H05H7/08 , C23C14/48 , G21K1/087 , G21K5/04 , H01J37/08 , H01J37/317 , H05H7/00
摘要： PURPOSE:To accelerate ion beams of large beam current and comparatively low energy while strongly converging them under not very large potential difference between electrodes by specifying an angle whereat each of the finger electrodes in a finger quadrupole portion looks out upon the central axis of an accelerating tube main body. CONSTITUTION:An accelerating-tube for a large-current ion implantation device consists of a first cylindrical electrode 1 and a second cylindrical electrode 2. Paired circular arc-shaped finger electrodes 1a, 1b of the first cylindrical electrode 1 and paired circular arc-shaped finger electrodes 2a, 2b of the second cylindrical electrode 2 are respectively fabricated to construct a quadrupole lens in such a manner that they may be positioned not only coaxially but also respectively in two flat-surfaces orthogonal to each other. The width of each of the circular arc-shaped finger electrodes on the circumference of a circle is set within the range of an angle of 10 deg. to 80 deg. whereat the electrode looks out upon the central axis of an accelerating tube main-body. By this construction, converging action required for the quadrupole lens can be made even if ion beams are spread to an extent of 70% of the diameter of the accelerating tube main-body.

6. 发明专利

JPH117914A ION IRRADIATOR 失效
公开(公告)号：JPH117914A
公开(公告)日：1999-01-12
申请号：JP17761097
申请日：1997-06-18
申请人： ULVAC CORP
发明人： AGAWA YOSHIAKI , TERASAWA HISAHIRO , KATAGAWA TAKESHI
IPC分类号： H01J37/244 , H01J37/252
摘要： PROBLEM TO BE SOLVED: To provide a technique capable of precisely measuring a secondary electron current by a secondary electron emitted from a sample. SOLUTION: In an ion irradiator, an ion beam, which is extracted from an ion source and energy of which is reduced by deceleration electrodes 41, is radiated to a sample 43, and then, a generated secondary electron current is measured. A suppresser electrode 5 is disposed in front of the deceleration electrodes 41. With application of a voltage, a negative potential gradient in an ion beam proceeding direction is formed at the front surface of the suppresser electrode 5. Since a secondary electron generated inside a collimator or a vacuum tank is pushed back by the negative potential gradient, it cannot infiltrate to the back of the deceleration electrodes 41, thereby precisely determining a secondary electron current by the secondary electron emitted form the sample 43.

7. 发明专利

JPH046739A ION IMPLANTATING DEVICE 失效
公开(公告)号：JPH046739A
公开(公告)日：1992-01-10
申请号：JP10645390
申请日：1990-04-24
申请人： ULVAC CORP
发明人： TSUKAGOSHI OSAMU , SAKURADA YUZO , KATAGAWA TAKESHI
IPC分类号： H01J37/317 , H01L21/265
摘要： PURPOSE:To perform ion implantation via the scanning with parallel scan beams fed to a large-area ion radiation face at the same incident angle by providing two multi-pole electrostatic deflectors with the preset structure mode. CONSTITUTION:Ions generated by an ion source 1 are removed with neutral particles via a two-pole electrostatic deflector 5 through a mass separator 2 and implanted to a substrate 8 through multi-pole electrostatic deflectors 6, 7. The first multi-pole electrostatic deflector 6 of two multi-pole electrostatic deflectors has four or more poles. The other second multi-pole electrostatic deflector 7 is arrange around the same optical axis behind the first electrostatic deflector 6, it has poles twice the number of poles of the first electrostatic deflector 6, and it deflects the ion beam deflected by the first electrostatic deflector 6 in the invariably constant direction against the surface of the substrate 8. The uniform range of the electric field in the cross section of the deflector is increased, and parallel scanning can be performed on the large substrated 8.

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