专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JPH11354064A ION IMPLANTING APPARATUS 失效
公开(公告)号：JPH11354064A
公开(公告)日：1999-12-24
申请号：JP16367898
申请日：1998-06-11
申请人： ULVAC CORP
发明人： OGATA SEIJI , KUNIBE TOSHIHISA , YOKOO HIDEKAZU , NISHIBASHI TSUTOMU
IPC分类号： C23C14/48 , H01J37/317 , H01L21/265
摘要： PROBLEM TO BE SOLVED: To provide an ion implantation apparatus with less energy contamination or less abnormal energy distribution, without making the device large even if the substrate becomes large sized. SOLUTION: This ion implantation device accelerates or decelerates mass- separated ions to a specified energy and combines electromagnetic scanning of ion beams on the scanning surface, containing the reference axis of beams with mechanical scanning for moving a substrate to be ion implanted along the straight line crossing perpendicular to the scanning surface. A first fan- shaped electromagnet 2 for conducting mass separation and a mass separating slit 3 are installed in the path of ion beams, an electrostatic deflector 4 for scanning beams, and an accelerating tube 6 having a plurality of circular arc- shaped electrodes are installed in front of the mass separation slit 3 in order, a second fan-shaped electromagnet 7, whose deflecting surface agrees with the deflecting surface of the electrostatic deflector 4 is installed in front of the accelerating tube 6, and the curvature center of the circular arc-shaped electrode of the accelerating tube 6 and the inlet side focal point of the second fan-shaped electromagnet 7 are made to coincide with the deflecting center of the electrostatic deflector 4.

2. 发明专利

JP2006324404A SURFACE PROCESSING DEVICE AND SURFACE PROCESSING METHOD 审中-公开
公开(公告)号：JP2006324404A
公开(公告)日：2006-11-30
申请号：JP2005145394
申请日：2005-05-18
申请人： ULVAC CORP
发明人： SAKURADA YUZO , YOKOO HIDEKAZU , NISHIBASHI TSUTOMU , OGATA SEIJI , SEKIGUCHI MASAYUKI
IPC分类号： H01L21/265 , H01J37/317 , H01L21/22
摘要： PROBLEM TO BE SOLVED: To provide a composite surface processing device that serves as an ion implantation device using an ion beam and also as a plasma doping device at the same time, and carries out a low-energy ion doping process using an ion beam with high accuracy and high efficiency. SOLUTION: The surface processing device 10 is equipped with: an ion implantation unit 31 and a plasma doping unit 21, and the ion implantation unit 31 is equipped with a decelerator 37 decelerating ions, a deflector 38 deflecting the decelerated ions toward a stage 4, and a bias power supply 9 guiding ions to the stage 4. The deflector 38 removes neutral particles from the ion beam, and the bias power supply 9 attracts an ion beam of low-energy emitted from the deflector 37 to a wafer W. By this setup, a low-energy ion doping process is carried out by the use of the ion implantation unit 31 with high impurity and high efficiency. COPYRIGHT: (C)2007,JPO&INPIT

3. 发明专利

JPH07325200A ION ACCELERATOR 失效
公开(公告)号：JPH07325200A
公开(公告)日：1995-12-12
申请号：JP14119194
申请日：1994-05-31
申请人： ULVAC CORP
发明人： AGAWA YOSHIAKI , OGATA SEIJI , YOKOO HIDEKAZU
IPC分类号： G21K5/04 , H05H5/02
摘要： PURPOSE:To provide an ion accelerator which can easily regulate at the maximum the current value of a desired ion brought into an ion accelerating tube even if the position of an ion source and a mass separating magnet is fixed and if the forms of them are uniform CONSTITUTION:A casing 81 is fixed at the bottom wall in a drive slit chamber 80 and a vacuum motor 84 is installed on an edge wall on the lower side of the casing 81. A bearing 87 installed on another edge wall through the drive shaft of the motor 84 and a coupling 85 supports a screw rod 86 so as to enable the rotation of it. The upper end face of the easing 81 supports a drive plate 89 fixed on a prop 90 supporting a slit plate 88 so as to slide the drive plate 89 freely. A screw block S fixed on the drive plate 89 is screwed on the screw rod 86.

4. 发明专利

JPH07245196A ION ACCELERATING DEVICE 失效
公开(公告)号：JPH07245196A
公开(公告)日：1995-09-19
申请号：JP6013894
申请日：1994-03-03
申请人： ULVAC CORP
发明人： KOBAYASHI FUMIHIKO , YOKOO HIDEKAZU , YOKOO TOSHIAKI , KANAMORI KOJI , AGAWA YOSHIAKI
IPC分类号： H05H5/02
摘要： PURPOSE:To provide an ion accelerating device which can exhaust the gas leaked inside a gas box quickly and safely to the outside without causing enlargement of the overall height of the device even in the case a voltage as high as over 400kV is impressed on a high voltage terminal. CONSTITUTION:A solid insulation column 22 made of an electrically insulating material is connected between the bottom wall of a high voltage terminal 42 and the floor surface 41a of a ground shield box 41 and is secured at the top and bottom by bolts 23, 24. An exhaust duct hose 28 soft and in bellows form is wound spirally on an uneven surface consisting of a major diameter portion 22a and a minor diameter portion 22b of the column 22, and the top is threaded through an opening formed at the bottom wall of the terminal 42 and fixed airtightly to the bottom wall of a gas box 70 while the bottom is fixed airtightly to the branch part 25a of a piping 25.

5. 发明专利

JPH11339711A ION IMPLANTATION EQUIPMENT 失效
公开(公告)号：JPH11339711A
公开(公告)日：1999-12-10
申请号：JP14902598
申请日：1998-05-29
申请人： ULVAC CORP
发明人： NIIKURA KOICHI , YOKOO HIDEKAZU , HISAMUNE TAKESHI , NISHIBASHI TSUTOMU , KIMURA NOBUAKI , KASHIMOTO KAZUHIRO
IPC分类号： H01J37/09 , H01J37/317
摘要： PROBLEM TO BE SOLVED: To provide ion implantation equipment suited to form areas having different ion implantation quantities in a plane of a single wafer. SOLUTION: In this ion implantation equipment for implanting ions in a substrate 3 disposed in vacuum by scanning an ion beam 4 from an ion source in one direction, an incident area controlling slit 8 for controlling an area on which the ion beam 4 is incident in the plane of the substrate 3 is provided in front of the substrate 3. The incident area controlling slit 8 is composed of a slit 11 having a constant opening space and a shutter 12 for decreasingly controlling the opening space of the slit 11.

6. 发明专利

JPH1154059A ION SOURCE 失效
公开(公告)号：JPH1154059A
公开(公告)日：1999-02-26
申请号：JP13035897
申请日：1997-05-02
申请人： ULVAC CORP , TOSHIBA CORP
发明人： NISHIBASHI TSUTOMU , YOKOO HIDEKAZU , KIHARA KENICHI , HANANO YOJIRO , GUNYASU TAKAHISA
IPC分类号： H01J27/08 , H01J37/08
摘要： PROBLEM TO BE SOLVED: To provide an ion source having a long life, by increasing dielectric strength of the ion source. SOLUTION: Insulators 141 , 142 are provided in a through hole provided in an enclosure 18 made of metal, and both ends of a filament 12 are fixed by fitting filament-fixing pins 161 , 162 into the insulators 141 , 142 respectively. A first shield plate 15a is disposed between the insulators 141 142 and the filament 12 and the periphery thereof is fixed closely to an inner wall of the enclosure 18. Tips of the filament-fixing pins 161 , 162 are caused to stick out in a non-contacting manner from through holes in the first shield plate 15a. Excitation gas ion particles are screened by the first shield plate 15a to prevent the insulators 141 , 142 from being contaminated. If gaps between repeller-fixing pins 261 , 262 and a second shield plate 15b are made narrow, insulators 241 , 242 mounted with the repeller-fixing pins 261 , 262 are also prevented from being contaminated.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式