专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 发明专利

JP2002368504A High frequency filter 有权
标题翻译：高频滤波器
公开(公告)号：JP2002368504A
公开(公告)日：2002-12-20
申请号：JP2001176680
申请日：2001-06-12
申请人： Toshiba Corp , 株式会社東芝
发明人： INO TSUNEHIRO , FUKUYA HIROYUKI
IPC分类号： H01L39/00 , H01L23/34 , H01L35/28 , H01P1/203 , H01P1/205 , H01P1/30
CPC分类号： H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a modulative high frequency filter which suppresses the widening of an end part in a filter frequency and attains a waveform which is made to be rectangular as much as possible. SOLUTION: The filter is provided with a substrate 32, a resonator 33 formed on the substrate 32, a dielectric body 34 formed in the neighborhood of the resonator 33 and a temperature control element 35 which is formed in the neighborhood of the dielectric body 34 and can control heating and cooling. In the high frequency filter, the temperature control element 35 heats or cools the dielectric body 34 and, then, a dielectric constant of the dielectric body 34 is made variable so that the frequency can be modulated.
摘要翻译：要解决的问题：提供抑制滤波器频率中的端部加宽的调制高频滤波器，并且尽可能地获得被做成矩形的波形。解决方案：滤波器设置有基板32，形成在基板32上的谐振器33，形成在谐振器33附近的电介质体34和形成在电介质体34附近的温度控制元件35，以及可以控制加热和冷却。在高频滤波器中，温度控制元件35加热或冷却电介质体34，然后使电介质体34的介电常数可变，使得能够调制频率。

12. 发明专利

JP2013187362A Nonvolatile semiconductor storage device 审中-公开
标题翻译：非易失性半导体存储器件
公开(公告)号：JP2013187362A
公开(公告)日：2013-09-19
申请号：JP2012051492
申请日：2012-03-08
申请人： Toshiba Corp , 株式会社東芝
发明人： INO TSUNEHIRO
IPC分类号： H01L21/336 , H01L21/8247 , H01L27/115 , H01L29/788 , H01L29/792 , H01L51/05 , H01L51/30
CPC分类号： H01L29/792 , B82Y10/00 , H01L27/1157 , H01L27/11582 , H01L29/42332 , H01L29/42348 , H01L29/513 , H01L29/66825 , H01L29/66833 , H01L29/7881 , H01L29/7889 , H01L29/7926 , Y10S977/943
摘要： PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor storage device which achieves thinning of a charge storage film while maintaining charge storage characteristics.SOLUTION: A nonvolatile semiconductor storage device of an embodiment comprises: a semiconductor layer; a first insulation film formed on the semiconductor layer; a charge storage film which is formed on the first insulation film and has a C60 fullerene of not less than 0.5 monolayer and less than 1.0 monolayer; a second insulation film on the charge storage film; and a control electrode on the second insulation film.
摘要翻译：要解决的问题：提供一种在保持电荷存储特性的同时实现电荷存储膜的薄化的非易失性半导体存储装置。解决方案：实施方式的非易失性半导体存储装置包括：半导体层; 形成在所述半导体层上的第一绝缘膜; 形成在第一绝缘膜上并具有不小于0.5单层且小于1.0单层的C60富勒烯的电荷存储膜; 电荷存储膜上的第二绝缘膜; 以及第二绝缘膜上的控制电极。

13. 发明专利

JP2008235704A Semiconductor element and semiconductor integrated circuit 审中-公开
标题翻译：半导体元件和半导体集成电路
公开(公告)号：JP2008235704A
公开(公告)日：2008-10-02
申请号：JP2007075376
申请日：2007-03-22
申请人： Toshiba Corp , 株式会社東芝
发明人： INO TSUNEHIRO , KOYAMA MASATO
IPC分类号： H01L27/10 , H01L21/82
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor element capable of programming a logic operation and being operated as a nonvolatile memory element as well.
SOLUTION: The semiconductor element comprises: a substrate 2; a first insulation film 4 provided on the substrate; an electric resistance change film 6 provided on the first insulation film; a first electrode 8 provided on the first insulation film on the side of one of both side faces of the electric resistance change film in contact with one side face of the electric resistance change film; a second electrode 10 provided on the first insulation film on the side of the other one of both side faces of the electric resistance change film in contact with the other side face of the electric resistance change film; a second insulation film 12 provided on the electric resistance change film; and a third electrode 14 provided on the second insulation film.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够对逻辑操作进行编程并作为非易失性存储元件操作的半导体元件。解决方案：半导体元件包括：基板2; 设置在基板上的第一绝缘膜4; 设置在第一绝缘膜上的电阻变化膜6; 在所述电阻变化膜的两个侧面中的一个侧面的与所述电阻变化膜的一个侧面接触的第一绝缘膜上设置的第一电极8; 设置在第一绝缘膜上的电阻变化膜的另一侧的另一侧的与电阻变化膜的另一侧面接触的第二电极10; 设置在电阻变化膜上的第二绝缘膜12; 以及设置在第二绝缘膜上的第三电极14。版权所有（C）2009，JPO＆INPIT

14. 发明专利

JP2008066668A Semiconductor device and manufacturing method therefor 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2008066668A
公开(公告)日：2008-03-21
申请号：JP2006245911
申请日：2006-09-11
申请人： Toshiba Corp , 株式会社東芝
发明人： INO TSUNEHIRO , KOYAMA MASATO
IPC分类号： H01L21/8246 , C23C14/08 , H01L27/10 , H01L27/105
摘要： PROBLEM TO BE SOLVED: To improve characteristics of an element using a single crystal having a perovskite structure by enabling formation of the single crystal having the perovskite structure of proper quality on a silicon substrate.
SOLUTION: A semiconductor device using a ferroelectric film having the perovskite structure includes: an a-axis orientation single-crystal buffer film 13 of Zr
1-x Si
x O
2 (0.08≤x≤0.10) formed on a single-crystal silicon substrate 11; a lower electrode 14 which is made of the single crystal of the perovskite structure or Pt and formed on the buffer film 13; the ferroelectric film 15, which is made of the single crystal of the perovskite structure and formed on the lower electrode 14; and an upper electrode 16, which is formed as a single crystal of the perovskite structure or Pt and formed on the ferroelectric film 15.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：为了通过在硅衬底上形成具有适当质量的钙钛矿结构的单晶来提高使用具有钙钛矿结构的单晶的元件的特性。＆lt; P＆gt;解决方案：使用具有钙钛矿结构的铁电体膜的半导体器件包括：Zr <1> x x 的a轴取向单晶缓冲膜13，在单晶硅基板11上形成的O 2 （0.08≤x≤0.10）形成在缓冲膜13上的下部电极14，其由钙钛矿结构的单晶或Pt构成，形成在下部电极14上的由钙钛矿结构的单晶构成的铁电体膜15; 以及形成为钙钛矿结构的单晶或Pt并形成在铁电体膜15上的上电极16。（C）2008，JPO＆INPIT

15. 发明专利

JP2007067266A Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：JP2007067266A
公开(公告)日：2007-03-15
申请号：JP2005253295
申请日：2005-09-01
申请人： Toshiba Corp , 株式会社東芝
发明人： INO TSUNEHIRO , KOYAMA MASATO , KAMIMUTA YUICHI , NISHIYAMA AKIRA
IPC分类号： H01L29/78 , H01L21/28 , H01L29/423 , H01L29/49
摘要： PROBLEM TO BE SOLVED: To realize reduction in leak current and restrain a flat band voltage from shifting.
SOLUTION: The device has a gate insulating film 4 which is provided on a semiconductor substrate 2 and consists of a high dielectric comprising oxygen, an electric conductive film 6 which is provided on the gate insulating film and consists of an electric conductor comprising oxygen, and a gate electrode 8 provided on the electric conductor film.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：实现漏电流的降低并抑制平带电压的变化。解决方案：该器件具有栅极绝缘膜4，该栅极绝缘膜4设置在半导体衬底2上并由包括氧的高电介质组成，导电膜6设置在栅极绝缘膜上并由导电体构成，该导电体包含氧和设置在导电膜上的栅电极8。版权所有（C）2007，JPO＆INPIT

16. 发明专利

JP2007027500A Semiconductor device and its manufacturing method 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2007027500A
公开(公告)日：2007-02-01
申请号：JP2005208915
申请日：2005-07-19
申请人： Toshiba Corp , 株式会社東芝
发明人： INO TSUNEHIRO , KANEKO AKIO , AOKI NOBUTOSHI
IPC分类号： H01L29/78 , H01L21/28 , H01L29/423 , H01L29/49 , H01L29/786
CPC分类号： H01L21/28202 , H01L21/268 , H01L21/2686 , H01L21/28035 , H01L21/2807 , H01L21/28176 , H01L21/28185 , H01L21/28194 , H01L29/511 , H01L29/517
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device that can thin the SiO
2 equivalent film thickness of a gate insulating film.
SOLUTION: This semiconductor device contains a semiconductor substrate, a gate insulating film formed on the above semiconductor substrate; and a gate electrode formed on the above gate insulating film which not only contains amorphous or polycrystalline Si
1-x Ge
x (0≤x 19 /cm
3 , but less than or equal to 5×10
20 /cm
3 , a second p-type impurity whose atom radius is smaller than that of the first p-type impurity and furthermore the first p-type impurity and second p-type impurity are covalently bound.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种可以使栅极绝缘膜的SiO 2 等效膜厚度薄化的半导体器件。解决方案：该半导体器件包含半导体衬底，形成在上述半导体衬底上的栅绝缘膜; 以及形成在上述栅极绝缘膜上的栅电极，其不仅含有作为主要元素的非晶或多晶Si（SB）x （<0≤x<0.25）而且还以它们取代硅原子的方式含有p型杂质。在该器件中，以取代上述栅电极的上述硅原子的方式定位的p型杂质含有密度大于或等于5×10 19的第一p型杂质 > / 3 ，但小于或等于5×10 20 / cm 3 ，其原子半径为小于第一p型杂质，第一p型杂质和第二p型杂质共价结合。版权所有（C）2007，JPO＆INPIT

17. 发明专利

JP2015015334A 半導体装置および誘電体膜有权
标题翻译：半导体器件和电介质膜
公开(公告)号：JP2015015334A
公开(公告)日：2015-01-22
申请号：JP2013140431
申请日：2013-07-04
申请人：株式会社東芝 , Toshiba Corp
发明人： INO TSUNEHIRO
IPC分类号： H01L21/8246 , H01L21/336 , H01L27/105 , H01L29/788 , H01L29/792 , H01L45/00 , H01L49/00
CPC分类号： H01L45/06 , G11C11/223 , H01L27/11507 , H01L27/1159 , H01L28/40 , H01L29/78391 , H01L29/7843 , H01L45/04 , H01L45/1233 , H01L45/1253 , H01L45/146
摘要：【課題】抗電界が低い酸化ハフニウムの強誘電体膜またはフェリ誘電体膜を備える半導体装置を提供する。【解決手段】実施形態の半導体装置は、第1の導電層と、第2の導電層と、第1の導電層と第2の導電層との間に設けられ、Zn、Mg、Mn、Nb、Sc、Fe、Cr、Co、In、Li、Nから選ばれる少なくとも1種の元素Aを含む酸化ハフニウムの強誘電体膜またはフェリ誘電体膜と、を備える。【選択図】図1
摘要翻译：要解决的问题：提供具有低矫顽电场的氧化铪铁电体膜或铁氧体膜的半导体器件。解决方案：一个实施方案的半导体器件包括：第一导电层; 第二导电层; 以及设置在第一导电层和第二导电层之间并含有选自Zn，Mg，Mn，Nb，Sc，Fe，Cr，Co，In中的至少一种元素A的氧化铪铁电体膜或铁氧体膜。，李和N.

18. 发明专利

JP2010087089A Semiconductor storage element, and method of manufacturing the same 有权
标题翻译：半导体存储元件及其制造方法
公开(公告)号：JP2010087089A
公开(公告)日：2010-04-15
申请号：JP2008252411
申请日：2008-09-30
申请人： Toshiba Corp , 株式会社東芝
发明人： INO TSUNEHIRO , FUJII AKISUKE , FUJIKI JUN , TAKASHIMA AKIRA , SHINGU MASAO , MATSUSHITA DAISUKE , YASUDA NAOKI , MURAOKA KOICHI
IPC分类号： H01L21/8247 , H01L27/115 , H01L29/788 , H01L29/792
CPC分类号： H01L29/792 , H01L29/517 , H01L29/66833
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor storage element that can accumulate and erase electric charge with higher efficiency than a conventional charge storage film using SiN, and holds the accumulated electric charge for a long time, and to provide a method of manufacturing the semiconductor storage element.
SOLUTION: The semiconductor storage element includes: a source region and a drain region provided in a semiconductor substrate; a tunnel insulating film provided on the semiconductor substrate between the source region and the drain region; a charge storage film provided on the tunnel insulating film; a block insulating film provided on the charge storage film; a gate electrode provided on the block insulating film; and a region containing gas molecules, the region being provided in a neighborhood of an interface between the charge storage film and the block insulating film.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种半导体存储元件，其可以比使用SiN的常规电荷存储膜更高的效率地累积和擦除电荷，并且长时间保持积累的电荷，并且提供一种方法制造半导体存储元件。解决方案：半导体存储元件包括：设置在半导体衬底中的源极区域和漏极区域; 设置在所述源极区域和所述漏极区域之间的所述半导体衬底上的隧道绝缘膜; 设置在隧道绝缘膜上的电荷存储膜; 设置在电荷存储膜上的块状绝缘膜; 设置在所述块绝缘膜上的栅电极; 以及包含气体分子的区域，该区域设置在电荷存储膜和块绝缘膜之间的界面附近。版权所有（C）2010，JPO＆INPIT

19. 发明专利

JP2009200226A Semiconductor memory element 有权
标题翻译：半导体存储元件
公开(公告)号：JP2009200226A
公开(公告)日：2009-09-03
申请号：JP2008039952
申请日：2008-02-21
申请人： Toshiba Corp , 株式会社東芝
发明人： INO TSUNEHIRO , YASUDA NAOKI , MURAOKA KOICHI , FUJIKI JUN , KIKUCHI SACHIKO , ARIYOSHI KEIKO
IPC分类号： H01L21/8247 , H01L27/115 , H01L29/788 , H01L29/792
CPC分类号： H01L29/792 , H01L29/42348 , H01L29/513 , H01L29/518
摘要： PROBLEM TO BE SOLVED: To achieve a large capacity by improving a charge storage density in a semiconductor memory element containing a so called MONOS type structure memory cell having a tunnel insulating film, a charge storage film, a blocking film and a gate electrode on a semiconductor substrate. SOLUTION: The semiconductor memory element is configured so as to include the tunnel insulating film formed on the semiconductor substrate and an HfON type charge storage film containing Bevan cluster type structure crystals formed on the tunnel insulating film. COPYRIGHT: (C)2009,JPO&INPIT

20. 发明专利

JP2006012900A Semiconductor device and its manufacturing method 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2006012900A
公开(公告)日：2006-01-12
申请号：JP2004183801
申请日：2004-06-22
申请人： Toshiba Corp , 株式会社東芝
发明人： KAMIMUTA YUICHI , KOYAMA MASATO , INO TSUNEHIRO , NISHIYAMA AKIRA
IPC分类号： H01L29/78
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device which is prevented from a change in threshold value and equipped with a MOS transistor having high reliability against electrical stress.
SOLUTION: The semiconductor device comprises a semiconductor substrate (11) wherein an element isolation region (12) for demarcating an element region is formed, a source/drain region (25) formed away from the element region of the semiconductor substrate, gate insulation films (13 and 14) formed on the element region of the semiconductor substrate, and a gate electrode (15) containing a semiconductor which is formed on the gate insulation films. The gate insulation films are a first insulation film (13) containing metal and oxygen, and a second insulation film (14) which is formed on the first insulation film and contains silicon and oxygen. The content of metal contained in the second insulation film is 6.6 atomic % at an interface with the gate electrode.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种防止阈值变化并配备有对电应力具有高可靠性的MOS晶体管的半导体器件。解决方案：半导体器件包括半导体衬底（11），其中形成用于划分元件区域的元件隔离区（12），远离半导体衬底的元件区形成的源/漏区（25）形成在半导体衬底的元件区域上的栅极绝缘膜（13和14）以及形成在栅极绝缘膜上的包含半导体的栅电极（15）。栅绝缘膜是含有金属和氧的第一绝缘膜（13）和形成在第一绝缘膜上并含有硅和氧的第二绝缘膜（14）。包含在第二绝缘膜中的金属的含量在与栅电极的界面处为6.6原子％。版权所有（C）2006，JPO＆NCIPI

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式