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11. 发明专利

JP2011205000A Mount table 有权
标题翻译：安装表
公开(公告)号：JP2011205000A
公开(公告)日：2011-10-13
申请号：JP2010072665
申请日：2010-03-26
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： NONAKA TATSU
IPC分类号： H01L21/683 , H01L21/205 , H01L21/3065 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To provide a mount table for a substrate capable of promoting a temperature change of the substrate without complicating a constitution.SOLUTION: In a rectangular cross-section medium passage 26 formed at a susceptor 12 for mounting a wafer W thereon, the whole of a bottom 26a that is an inner surface farthest from the mounted wafer W and substantially lower parts of sides 26b and 26c that are two inner surface neighboring to the bottom 26a are covered with a low thermal conductivity resin layer 35, and a thickness of the low thermal conductivity resin layer 35 is, for example, 1 to 2 mm.
摘要翻译：要解决的问题：提供一种用于能够促进基板的温度变化的基板的安装台，而不会使构造复杂化。解决方案：在形成在其上安装晶片W的基座12的矩形横截面介质通道26中，作为与安装的晶片W最远的内表面的底部26a和与底部26a相邻的两个内表面的侧部26b和26c的大致下部的部分被低导热性树脂层35覆盖，厚度低导热性树脂层35的厚度例如为1〜2mm。

12. 发明专利

JP2008276439A Temperature control device 有权
标题翻译：温度控制装置
公开(公告)号：JP2008276439A
公开(公告)日：2008-11-13
申请号：JP2007118071
申请日：2007-04-27
申请人： Ckd Corp , Tokyo Electron Ltd , シーケーディ株式会社 , 東京エレクトロン株式会社
发明人： NAGASEKI KAZUYA , KOBAYASHI YOSHIYUKI , MURAKAMI KOICHI , NONAKA TATSU , SUDO YOSHIHISA , BANDO HIROSHI , KUNIYASU NORIO
IPC分类号： G05D23/19
CPC分类号： G05D23/19
摘要： PROBLEM TO BE SOLVED: To solve the problem of difficulty in promptly following a temperature of a controlled object to a desired temperature, when controlling the temperature of the controlled object to the desired temperature by circulating fluid in a temperature control unit disposed in the vicinity of the controlled object.
SOLUTION: A temperature control unit 11 for circulating the fluid is housed inside a temperature control plate 10 for supporting the controlled object. To the temperature control unit 11, there connected are a cooling path 20 for cooling and circulating the fluid, a bypass path 30 for circulating the fluid on the downstream side of the temperature control unit 11 intact again into the temperature control unit 11, and a heating path 40 for heating and circulating the fluid.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题为了解决难以及时将被控制物的温度维持在所需温度的问题，通过将流体循环在设置在温度控制单元中的温度控制单元中来控制受控对象的温度达到所需温度受控对象的附近。解决方案：用于使流体循环的温度控制单元11容纳在用于支撑受控对象的温度控制板10内。所连接的温度控制单元11是用于冷却和循环流体的冷却路径20，用于使温度控制单元11的下游侧的流体再循环到温度控制单元11中的旁路路径30，加热路径40，用于加热和循环流体。版权所有（C）2009，JPO＆INPIT

13. 发明专利

JPH11340208A PLASMA TREATMENT METHOD 失效
公开(公告)号：JPH11340208A
公开(公告)日：1999-12-10
申请号：JP16130898
申请日：1998-05-26
申请人： TOKYO ELECTRON LTD
发明人： NAGAHATA KAZUNORI , NONAKA TATSU
IPC分类号： H05H1/46 , C23C14/34 , C23C16/50 , C23F4/00 , H01L21/205 , H01L21/302 , H01L21/3065 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To provide a plasma treatment method for lifting up a workpiece from an electrostatic chuck without swinging or flying of the workpiece, even when an insulating supporting member is used. SOLUTION: A lower electrode 106 with an electrostatic chuck 112 is provided at a mounting face in a treatment chamber 102 in an etching apparatus 100. The lower electrode 106 has an insulating inner lifter pin 116 moving upward or downward with respect to the mounting face, while the lower electrode 106 is moved vertically. After the treatment, an inert gas is fed into the treatment chamber 102, so that the pressuric atmosphere is 100 to 500 mTorr, without stoppage of high DC voltage applied thereto. Then, a voltage to a thin film 112a is stopped, and the lower electrode 106 is lowered, and a wafer(W) held through chucking by the electrostatic chuck 112 is lifted up with the lifter pin 116.

14. 发明专利

JP2013026387A Mounting table temperature control device and substrate processing apparatus 有权
标题翻译：安装表温度控制装置和基板处理装置
公开(公告)号：JP2013026387A
公开(公告)日：2013-02-04
申请号：JP2011158950
申请日：2011-07-20
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： NONAKA TATSU
IPC分类号： H01L21/3065 , C23C16/46 , H01L21/31
CPC分类号： H01L21/67103 , H01L21/67098 , H01L21/67109 , H01L21/67248
摘要： PROBLEM TO BE SOLVED: To locally bring the temperature at a desired part in the surface higher or lower than the set temperature of the entire surface of a mounting table.SOLUTION: A main passage 320 formed in a mounting table 200 over the entire surface thereof, an auxiliary passage 330 formed partially in the surface of the mounting table on the upper side of the main passage while separated therefrom, and a temperature control medium circulation mechanism which supplies a temperature control medium adjusted to a predetermined set temperature to the main passage and circulates the medium therethrough, shunts the temperature control medium, and then supplies the temperature control medium to the auxiliary passage and circulates the medium therethrough after adjusting to a temperature higher or lower than the set temperature are provided.
摘要翻译：要解决的问题：将表面的温度局部地设置在高于或低于安装台的整个表面的设定温度的表面中的期望部分。解决方案：在整个表面上形成在安装台200中的主通道320，辅助通道330，部分地形成在主通道上侧的安装台的表面中，同时分离，辅助通道330和温度控制介质循环机构，其向主通道供给调节到预定设定温度的温度控制介质，并使介质循环通过其中，分流温度控制介质，然后将温度控制介质供给辅助通道，并将介质循环到其中，调整到提供高于或低于设定温度的温度。版权所有（C）2013，JPO＆INPIT

15. 发明专利

JP2001308080A PLASMA PROCESSING APPARATUS 失效
公开(公告)号：JP2001308080A
公开(公告)日：2001-11-02
申请号：JP2001077749
申请日：2001-03-19
申请人： TOKYO ELECTRON LTD
发明人： IMAFUKU KOSUKE , ENDO NORISUKE , TAWARA KAZUHIRO , TSUCHIYA HIROSHI , TOMOYASU MASAYUKI , NAITO YUKIO , NAGASEKI KAZUYA , NONAKA TATSU , HIROSE KEIZO , FUKAZAWA YOSHIO , KOSHIISHI AKIRA , KOBAYASHI ISAO
IPC分类号： H05H1/46 , H01L21/302 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To realize a high-density plasma by confining a plasma in a space between electrodes without diffusing it in a processing chamber. SOLUTION: The plasma processing apparatus for processing a work on a susceptor in a process chamber with a plasma generated by a high-frequency power in the process chamber, comprises a first annular magnetic field forming means disposed concentrically to the susceptor around the vicinity of the susceptor, and a second magnetic field forming means composed of a permanent magnet 72 is disposed facing the first magnetic field forming means via a gap with a magnetic member 75 attached to a permanent magnet 72.

16. 发明专利

JPH09289201A PLASMA TREATING APPARATUS 失效
公开(公告)号：JPH09289201A
公开(公告)日：1997-11-04
申请号：JP12794896
申请日：1996-04-23
申请人： TOKYO ELECTRON LTD
发明人： NONAKA TATSU , MIYAGAWA MASAAKI
IPC分类号： H05H1/46 , H01L21/203 , H01L21/205 , H01L21/302 , H01L21/3065 , H01L21/68 , H01L21/683
摘要： PROBLEM TO BE SOLVED: To improve the uniformity of the temp. of a heat transferring gas by providing a softer support member than ceramics for an electrostatic chuck, for only its portion contacting the back side periphery of a substrate to be treated. SOLUTION: An electrostatic chuck 11 has an upper ceramic face 13 with a support member composed of polyimide tape 14 peelably adhered to the marginal edge of the ceramic face 13 so as to form the outline of a wafer. He gas flowing out in a space between the back side of the wafer and the chuck 11 leaks from the contact face of the chuck 11 with the back side of the wafer, and the polyimide tape 14 at the marginal edge of the chuck 11 makes the flow of the leaking He gas approximately uniform over the periphery, thus forming a uniform flow of the gas over the back side of the wafer. This improves the uniformity of the temp. in a substrate being treated.

17. 发明专利

JPH02207547A PROCESSING METHOD 失效
公开(公告)号：JPH02207547A
公开(公告)日：1990-08-17
申请号：JP2779789
申请日：1989-02-07
申请人： TOKYO ELECTRON LTD
发明人： NONAKA TATSU , KUBOTA MASAKI , SAEGUSA HIDEHITO
IPC分类号： H01L21/302 , H01L21/027 , H01L21/30 , H01L21/3065 , H01L21/677 , H01L21/68
摘要： PURPOSE:To facilitate management for each object to be processed by a method wherein the arrangement order of objects to be processed in a containing vessel is inverted, the objects are carried into a processing chamber, and the objects after processing are arranged and contained in the containing vessel so as to keep the initial arrangement order. CONSTITUTION:For sending-out, indexers 7b and 7a are set as the first one and the second one, respectively. For buffering, indexers 7c and 7d are set as the first one and the second one, respectively. When the transferring of wafers 1 is started, the wafers are accommodated in each of the cassettes 6 from indexers 7b to 7c and from 7a to 7d in the state where the arrangement order of the wafers 1 is inverted. After the wafers 1 sent out from the indexer 7d are processed by a processing part 3, said wafers are accommodated in order in the wafer cassette 6 on the indexer 20a, and the wafers 1 sent out from the indexer 7c are accommodated in order in the wafer cassette 6 on the indexer 20b. At this time, the wafers for sending and for receiving are accommodated in the state where the up-and-down arrangement order is inverted. Thereby, the arrangement order of the object to be processed in the containing vessel is kept in the same state before and after processing, and the management for each object to be processed can be facilitated.

18. 发明专利

JP2011086712A Temperature control system and temperature control method for substrate mounting table 有权
标题翻译：基板安装表温控系统及温度控制方法
公开(公告)号：JP2011086712A
公开(公告)日：2011-04-28
申请号：JP2009237225
申请日：2009-10-14
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： SASAKI YASUHARU , NONAKA TATSU , NAGAYAMA MASAYUKI
IPC分类号： H01L21/683 , H01L21/3065 , H01L21/324
CPC分类号： H01L21/67248 , H01L21/67109
摘要： PROBLEM TO BE SOLVED: To provide a temperature control system for a substrate mounting table which can rapidly increase a temperature of a substrate and can reduce a loss of thermal energy. SOLUTION: A cooling medium circulation system incorporates a heater unit 14 and a heat medium path 15 and includes a susceptor 12 for mounting a wafer W to be treated by plasma etching. The system includes: a cool medium supplier 20 connected to the heat medium path 15 so as to supply a cool medium at a comparatively lower temperature to the heat medium path 15; a high temperature medium storage tank 21 arranged between the heat medium path 15 and the cool medium supplier 20 so as to store a high temperature medium at a comparatively higher temperature; and a first valve group 23 arranged among the cool medium supplier 20, the high temperature medium storage tank 21, and the heat medium path 15 so as to stop the supply of the cool medium from the cool medium supplier 20 to the heat medium path 15 when the temperature of the susceptor 12 is raised, and also to supply the high temperature medium from the high temperature medium storage tank 21 to the heat medium path 15. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于基板安装台的温度控制系统，其可以快速地增加基板的温度并且可以减少热能的损失。解决方案：冷却介质循环系统包括加热器单元14和热介质通道15，并且包括用于通过等离子体蚀刻来安装待处理的晶片W的基座12。该系统包括：连接到热介质路径15的冷媒供给器20，以便将相对较低温度的冷介质供应到热介质通道15; 布置在热介质路径15和冷媒供给器20之间的高温介质储罐21，以便在相对较高的温度下储存高温介质; 以及设置在冷媒供给体20，高温介质储存箱21和热介质通路15之间的第一阀组23，以停止将冷媒从冷媒供给体20供给到热介质通路15 当基座12的温度升高时，并且还将高温介质从高温介质储罐21供给到热介质路径15.版权所有（C）2011，JPO＆INPIT

19. 发明专利

JP2009117443A Device and method for controlling temperature of substrate to be processed, and plasma processing equipment equipped with this 有权
标题翻译：用于控制要处理的基板的温度的装置和方法以及装备有该等离子体处理装置
公开(公告)号：JP2009117443A
公开(公告)日：2009-05-28
申请号：JP2007285823
申请日：2007-11-02
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： NONAKA TATSU , MURAKAMI KOICHI
IPC分类号： H01L21/3065
CPC分类号： G05D23/1934
摘要： PROBLEM TO BE SOLVED: To provide a means for controlling the temperature in each region of a substrate by dividing a substrate to be processed mounted on a mounting table into a plurality of regions, and changing the amount of heat transferred between a mounting table and a substrate in each region. SOLUTION: The temperature controller of a substrate to be processed comprises a mounting table equipped with a plurality of temperature control sections of respective temperature systems for controlling a substrate to be processed to a temperature predetermined for each region, a circulation channel for circulating fluid to each temperature system through the temperature control section, a heating channel for passing heating fluid having a temperature higher than that of the circulation fluid, a cooling channel for passing cooling fluid having a temperature lower than that of the circulation fluid, and a section for joining the fluids in the circulation channel, the heating channel, and the cooling channel for each temperature system in the vicinity of the mounting table and including a means for adjusting the ratio of flow rate of fluids delivered from respective channels to the temperature control sections. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于通过将安装在安装台上的待处理基板分成多个区域来控制基板的每个区域中的温度的装置，并且改变在安装件之间传递的热量表和每个区域中的底物。解决方案：待处理衬底的温度控制器包括安装台，其安装有用于将要处理的衬底控制到每个区域预定温度的各个温度系统的多个温度控制部分，用于循环的循环通道流体通过温度控制部分到达每个温度系统，用于使具有高于循环流体的温度的加热流体通过的加热通道，用于使具有低于循环流体的温度的冷却流体的冷却通道，用于连接在安装台附近的每个温度系统的循环通道，加热通道和冷却通道中的流体，并且包括用于调节从各个通道输送到温度控制部分的流体的流量比的装置。版权所有（C）2009，JPO＆INPIT

20. 发明专利

JP2004335667A Surface treatment apparatus 审中-公开
公开(公告)号：JP2004335667A
公开(公告)日：2004-11-25
申请号：JP2003128303
申请日：2003-05-06
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： HONDA MINORU , NONAKA TATSU , MITSUOKA KAZUYUKI
IPC分类号： G21K5/04 , G03F7/20 , G03F7/40 , H01J37/30 , H01J37/317 , H01L21/027 , H01L21/31
CPC分类号： H01J37/317 , H01J2237/3156
摘要： PROBLEM TO BE SOLVED: To provide a surface treatment apparatus which can reduce the energy of an electron beam and simplify a constitution.
SOLUTION: The surface treatment apparatus 1 is equipped with a mounting stand 3 for mounting almost horizontally a semiconductor wafer W in a vacuum chamber 2, an electron beam irradiation mechanism 6 which is arranged at a ceiling of the vacuum chamber 2 and irradiates the semiconductor wafer W with an electron beam, and a self-field generator 13 arranged between the mounting stand 3 and the electron beam irradiation mechanism 6. The self-field generator 13 is constituted of a plurality of electro static charge boards 13a which are arranged in face to face with each of irradiation windows 6b in the electron beam irradiation mechanism 6. The electro static charge board 13a is a plate-like object, has five slits 13b which passes the electron beam on the facing surface which faces the irradiation windows 6b, and is provided with an internal component 13c constituted of a conductor, an external component 13d constituted of an insulator covering the internal component 13c, and a wire 13e which grounds the internal component 13c.
COPYRIGHT: (C)2005,JPO&NCIPI

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