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11. 发明专利

JPS6292388A SEMICONDUCTOR LASER ELEMENT 失效
公开(公告)号：JPS6292388A
公开(公告)日：1987-04-27
申请号：JP23304985
申请日：1985-10-17
申请人： SHARP KK
发明人： SUYAMA NAOHIRO , HAYAKAWA TOSHIRO , TAKAHASHI KOUSEI , KONDO MASAFUMI , YAMAMOTO SABURO
IPC分类号： H01S5/00 , H01S5/12
摘要： PURPOSE:To stabilize the longitudinal mode of a GaAlAs/GaAs group semiconductor laser element by forming superlattice structure onto a substrate. to which a diffraction grating is shaped, under constant conditions and continuously forming an active layer to the superlattice structure. CONSTITUTION:A first clad layer 2, an optical guide layer 3 having a superlattice structure consisting of at least two semiconductor films having different compositions, a GaAs active layer 4, a second clad layer 5 and a cap layer 6 are successively formed onto an N-GaAs substrate 1 to which a diffraction grating 20 is shaped where nc

12. 发明专利

JPS6288318A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS6288318A
公开(公告)日：1987-04-22
申请号：JP22938285
申请日：1985-10-14
申请人： SHARP KK
发明人： HAYAKAWA TOSHIRO , SUYAMA NAOHIRO , KONDO MASAFUMI , TAKAHASHI KOUSEI , YAMAMOTO SABURO
IPC分类号： H01L21/203 , H01L21/20 , H01L21/26 , H01S5/00
摘要： PURPOSE:To realize an epitaxial layer of higher quality, and obtain a semiconductor device having excellent characteristics such as small threshold current, etc. by inclining the face orientation of a single crystal substrate from the (111)B face. CONSTITUTION:The titled device of high quality is obtained, by using an MBE growth epitaxial layer on a substrate whose face orientation is inclined by 0.1-1 degree from the (111)B face. In the case where the inclination angle of face orientation of a GaAs substrate 31 from the (111)B face is in a range of 0.1-1 deg., the growth surface homology of a mirror surface is completely obtained. Outside this range, that is, in the larger angle side or the smaller angle side, a non-mirror surface only is obtained. In the region where the inclination angle is 0.1-1 deg., a luminous efficiency higher than one or more digits is obtained as compared with other regions.

13. 发明专利

JPS6261385A SEMICONDUCTOR LASER ELEMENT 失效
公开(公告)号：JPS6261385A
公开(公告)日：1987-03-18
申请号：JP20120085
申请日：1985-09-11
申请人： SHARP KK
发明人： SUYAMA NAOHIRO , TAKAHASHI KOUSEI , YAMAMOTO SABURO , HAYAKAWA TOSHIRO , KONDO MASAFUMI
IPC分类号： H01S5/00 , H01S5/02 , H01S5/028 , H01S5/042 , H01S5/06 , H01S5/10 , H01S5/16 , H01S5/227
摘要： PURPOSE:To obtain a stable basic lateral mode oscillation by forming a light absorbing region for a high order lateral mode in a resonant direction to suppress the high order lateral mode. CONSTITUTION:An N-type Ga1-xAlxAs first clad layer 2, a Ga1-yAlyAs active layer 3, and a P-type Ga1-xAlxAs second clad layer 4 are sequentially grown on an N-type GaAs substrate 1, removed by etching until arriving at the substrate 1 except a laser active region 5 at the center, an N-type Ga1-zAlzAs buried layer 6 is formed on the removed portion, and an insulating layer 7, a P-type side electrode 8 and an N-type side electrode 9 are formed. The center of the region 5 is removed from the end of a wafer until arriving at the substrate 1, new end 12 of the region 12 is formed, and light absorbing regions are formed at striped peripheries 13, 14 of both sides of the etch-removed portion 15. Thus, the losses in the peripheries 13, 14 extremely increases in high order mode as compared with basic lateral mode to obtain a stable basic lateral mode oscillation.

14. 发明专利

JPS6034046B2 失效
公开(公告)号：JPS6034046B2
公开(公告)日：1985-08-06
申请号：JP11833479
申请日：1979-09-13
申请人： SHARP KK
发明人： HAYAKAWA TOSHIRO , YANO MORICHIKA , YAMAMOTO SABURO , KURATA YUKIO , MATSUI KANEKI
IPC分类号： G01B11/06

15. 发明专利

JPS6023517B2 失效
公开(公告)号：JPS6023517B2
公开(公告)日：1985-06-07
申请号：JP16984379
申请日：1979-12-25
申请人： SHARP KK
发明人： YAMAMOTO SABURO , YANO MORICHIKA , KURATA YUKIO , MATSUI KANEKI , HAYAKAWA TOSHIRO , TAKIGUCHI HARUHISA
IPC分类号： H01L21/208 , H01S5/00 , H01S5/223 , H01S5/24

16. 发明专利

JPH0680871B2 失效
公开(公告)号：JPH0680871B2
公开(公告)日：1994-10-12
申请号：JP32771887
申请日：1987-12-23
申请人： SHARP KK
发明人： HAYAKAWA TOSHIRO , SUYAMA NAOHIRO , TAKAHASHI KOSEI , KONDO MASAFUMI
IPC分类号： H01L21/205 , H01S5/00 , H01S3/18

17. 发明专利

JPH0560275B2 失效
公开(公告)号：JPH0560275B2
公开(公告)日：1993-09-01
申请号：JP22531483
申请日：1983-11-28
申请人： SHARP KK
发明人： HAYAKAWA TOSHIRO , SUYAMA NAOHIRO , YAMAMOTO SABURO
IPC分类号： H01L21/203 , H01S5/00 , H01S5/22 , H01S5/223 , H01S3/18

18. 发明专利

JPH0418476B2 失效
公开(公告)号：JPH0418476B2
公开(公告)日：1992-03-27
申请号：JP13219484
申请日：1984-06-25
申请人： SHARP KK
发明人： HAYAKAWA TOSHIRO , SUYAMA NAOHIRO , YAMAMOTO SABURO
IPC分类号： G02B6/13 , B82Y20/00 , H01L29/15 , H01S5/00 , H01S5/20 , H01S5/32 , H01S5/343

19. 发明专利

JPH0215689A MANUFACTURE OF SEMICONDUCTOR LASER ELEMENT 失效
公开(公告)号：JPH0215689A
公开(公告)日：1990-01-19
申请号：JP16546188
申请日：1988-07-01
申请人： SHARP KK
发明人： KONDO MASAFUMI , SUYAMA NAOHIRO , TAKAHASHI KOUSEI , HOSODA MASAHIRO , SASAKI KAZUAKI , HAYAKAWA TOSHIRO
IPC分类号： H01L21/203 , H01S5/00 , H01S5/223
摘要： PURPOSE:To form a semiconductor laser element possessed of an excellent oscillating property by a method wherein a semiconductor layer, which uses a group IV amphoteric element as a dopant, is grown on semiconductor growth faces of a substrate possessed of different Miller indexes respectively through a molecular beam epitaxy method. CONSTITUTION:A Cr doped semi-insulating GaAs substrate 31 of a normal mesa provided with a single slope is formed, where a semiconductor growth face 31a of a sloping 111A face (A denotes a group III element face) and a semiconductor growth face 31b of a 100 face are formed thereon. The following are successively grown on the semiconductor growth faces 31a and 31b through an MBE method: a non-doped high resistance GaAs buffer layer 32; a non-doped high resistance Al0.4Ga0.6As current block layer 33; a Si doped Al0.32Ga0.68As clad layer 34; a Si doped GaAs active layer 35; a Si doped Al0.32Ga0.68As clad layer 36; and a Si doped GaAs contact layer 37. Next, each p-n junction of the Si doped GaAs contact layer 37 and the Si doped GaAs contact layer 37 on the uppermost layer side above the semiconductor growth layer 31b are etched. Thereafter, a current block layer 38 is formed on the etched section. And, an n-type electrode 39 of AuGe/Ni and a p-type electrode 40 of Au/AuZn are evaporated. Then, the substrate 31 is abraded and then divided into chips.

20. 发明专利

JPH0215687A MANUFACTURE OF SEMICONDUCTOR LASER ELEMENT 失效
公开(公告)号：JPH0215687A
公开(公告)日：1990-01-19
申请号：JP16521988
申请日：1988-07-01
申请人： SHARP KK
发明人： KONDO MASAFUMI , SUYAMA NAOHIRO , TAKAHASHI KOUSEI , HOSODA MASAHIRO , SASAKI KAZUAKI , HAYAKAWA TOSHIRO
IPC分类号： H01L21/203 , H01S5/00 , H01S5/40
摘要： PURPOSE:To enable a single chip to oscillate two or more laser rays by a method wherein an element, possessed of two properties of both a donor and an acceptor as a dopant, is grown on a specified III-V compound semiconductor substrate through a molecular ray epitaxy method to form two or more oscillating regions on a single chip. CONSTITUTION:A mask is formed in stripes on a 100 Cr doped semi-insulating GaAs substrate 13 in a [0-11] direction, which is etched to form a normal mesa- shaped substrate provided with 111A faces 14 and 15 on its slope. Next, the following are continuously grown on the substrate 13 through an MBE method: a non-doped high resistance GaAs buffer layer 16; a non-doped high resistance Al0.32Ga0.68As current block layer 17; a Si doped Al0.32Ga0.68As clad layer 18; a Si doped Al0.08Ga0.92As active layer 19; a Si doped Al0.32Ga0.68As clad layer; and a Si doped GaAs contact layer 21. Next, the p-n junction of the contact layer 21 is etched. After that, a SiNX insulating film is formed and a current block layer 22 is formed. Next, a p-type electrode 23 of Au/AuZ and an n-type electrode 24 of AuGe/Ni are evaporated. Then, the substrate 13 is abraded and devided into chips.

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