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11. 发明专利

JP2012037379A Semiconductor apparatus with current detector 有权
标题翻译：具有电流检测器的半导体器件
公开(公告)号：JP2012037379A
公开(公告)日：2012-02-23
申请号：JP2010177714
申请日：2010-08-06
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： FURUKAWA TAISUKE , OSANAGA TAKASHI
IPC分类号： G01R31/28 , H01L21/8234 , H01L27/088 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To highly accurately detect a current with simple configuration of a semiconductor apparatus including a sensor for detecting the current using a magnetoresistance effector.SOLUTION: A semiconductor apparatus includes: a substrate on which a semiconductor circuit is formed; a first wiring member disposed over the substrate; a vertical wiring member erected on the first wiring member; a second wiring member connected to the vertical wiring member and installed in parallel with the first wiring member; a first magnetoelectric transducer disposed while facing the vertical wiring member; a second magnetoelectric transducer opposing the first magnetoelectric transducer with the vertical wiring member therebetween; a first device wiring for connecting the first magnetoelectric transducer and the second magnetoelectric transducer in series; and a first amplifier circuit to which a midpoint of the first device wiring is inputted.
摘要翻译：要解决的问题：通过包括用于使用磁阻效应器检测电流的传感器的半导体装置的简单配置来高精度地检测电流。解决方案：半导体装置包括：形成有半导体电路的基板; 设置在所述基板上的第一布线构件; 竖立在所述第一布线构件上的垂直布线构件; 连接到所述垂直布线构件并与所述第一布线构件并联安装的第二布线构件; 设置在面向垂直配线构件的第一磁电变换器; 与第一磁电变换器相对的第二磁电变换器，其间具有垂直配线构件; 用于串联连接第一磁电变换器和第二磁电变换器的第一器件布线; 以及输入第一器件布线的中点的第一放大电路。版权所有（C）2012，JPO＆INPIT

12. 发明专利

JP2010133851A Rotation angle sensor 有权
标题翻译：旋转角传感器
公开(公告)号：JP2010133851A
公开(公告)日：2010-06-17
申请号：JP2008310929
申请日：2008-12-05
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： AKIYAMA KOICHI , FURUKAWA TAISUKE , TOMOHISA SHINGO , KUROIWA TAKEHARU
IPC分类号： G01D5/18
摘要： PROBLEM TO BE SOLVED: To provide an accurate rotation angle sensor.
SOLUTION: The rotation angle sensor includes a pair of bias magnets 1 and 2 rotating together with a rotating body, a substrate 5 provided between the bias magnets 1 and 2, and a pair of magnetic members 3 and 4 provided on an internal end surface of the bias magnets 1 and 2, respectively. Grooves 3a and 4a extending in a direction parallel to a rotation center line are formed respectively on the internal end surface of the magnetic members 3 and 4. Therefore, a uniform magnetic field can be applied to the substrate 5.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供精确的旋转角度传感器。解决方案：旋转角度传感器包括与旋转体一起旋转的一对偏置磁体1和2，设置在偏置磁体1和2之间的基板5和设置在内部的一对磁性部件3和4 偏置磁铁1和2的端面。分别在磁性部件3和4的内端面上形成在与旋转中心线平行的方向上延伸的槽3a和4a。因此，能够对基板5施加均匀的磁场。 C）2010，JPO＆INPIT

13. 发明专利

JP2009276217A Magnetic rotation sensor 有权
标题翻译：磁力旋转传感器
公开(公告)号：JP2009276217A
公开(公告)日：2009-11-26
申请号：JP2008128156
申请日：2008-05-15
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： AKIYAMA KOICHI , FURUKAWA TAISUKE , TAKADA YUTAKA , KUROIWA TAKEHARU , ABE YUJI
IPC分类号： G01D5/245
摘要： PROBLEM TO BE SOLVED: To provide a magnetic rotation sensor capable of acquiring great output with high sensitivity, even when being not arranged close to a gear which is a detection object.
SOLUTION: This magnetic rotation sensor is equipped with: a bias magnet arranged on the outer circumference of a rotator having concavity and convexity on the outer circumference, for generating a magnetic flux in the same direction as a direction of a rotating shaft of the rotator; a board-like magnetic flux guide arranged close to the bias magnet so as to allow passage of the magnetic flux generated from the bias magnet, and positioned along the outer circumference of the rotator; and a plurality of magnetic resistance elements arranged respectively on positions on the furthermore rotator side than the magnetic flux guide in the periphery of both ends of the magnetic flux guide on a plane including the radial direction of the rotator. A magnetic flux direction in the periphery of both ends of the magnetic flux guide is changed periodically according to the position of concavity and convexity on the outer circumference of the rotator, and each resistance value of the plurality of magnetic resistance elements is changed periodically corresponding to the change of the magnetic flux direction, and a difference between each resistance value of the plurality of magnetic resistance elements is detected.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：即使在没有靠近作为检测对象的齿轮的情况下提供能够以高灵敏度获取大输出的磁旋转传感器。解决方案：该磁旋转传感器配备有：设置在外周具有凹凸的旋转体的外周上的偏置磁体，用于沿与旋转轴的旋转轴方向相同的方向产生磁通量旋转器布置在靠近偏置磁体的板状磁通引导件，以允许从偏置磁体产生的磁通量通过，并沿旋转体的外圆周定位; 以及多个磁阻元件，分别布置在包括转子的径向方向的平面上的磁通导件的两端的周边的磁通导向件的另外的旋转体侧的位置上。导磁体两端的周边的磁通方向根据旋转体的外周的凹凸的位置周期性地变化，并且多个磁阻元件的每个电阻值周期性地变化地对应于检测磁通方向的变化以及多个磁阻元件的各电阻值之差。版权所有（C）2010，JPO＆INPIT

14. 发明专利

JP2015045519A 電流センサおよび電流センサの製造方法审中-公开
标题翻译：电流传感器和电流传感器的制造方法
公开(公告)号：JP2015045519A
公开(公告)日：2015-03-12
申请号：JP2013175535
申请日：2013-08-27
申请人：三菱電機株式会社 , Mitsubishi Electric Corp
发明人： TSUKAMOTO MANABU , FURUKAWA TAISUKE , YOSHIDA YUKIHISA , NAKADA MUNEKI , KOBAYASHI HIROSHI , TAYA MASAKI
IPC分类号： G01R15/20
摘要：【課題】集磁コアと磁気検出処理部との位置関係を保持して、正確に電流を検出することができる電流センサおよびその製造方法を提供する。【解決手段】電流センサは、バスバー1と、集磁コア2と、磁気検出処理部4と、保持部材5とを備えている。バスバー1は電流を流すためのものである。集磁コア2はバスバー1の周囲を取り囲むように配置された囲繞部2aと、囲繞部2aの一部を分断するように設けられた切り欠き2bとを有し、かつバスバー1を流れる電流によってバスバー1の周囲に発生する磁気を集磁するためのものである。磁気検出処理部4は囲繞部2aから離れて切り欠き2bに配置されており、かつ集磁コア2により集磁された磁気を検出するためのものである。保持部材5は切り欠き2b内において集磁コア2および磁気検出処理部4に挟まれた領域に位置し、かつ集磁コア2および磁気検出処理部4の両方に接触する。【選択図】図1
摘要翻译：要解决的问题：提供一种能够通过维持磁场收集芯和磁场检测处理单元之间的位置关系来精确地检测电流的电流传感器及其制造方法。解决方案：电流传感器包括总线棒1，磁场收集芯2，磁场检测处理单元4和保持构件5.母线1用于使电流流动。磁场收集芯2包括以围绕基座1的周边的方式配置的周边部2a和设置成分离周围部2a的一部分的切口2b，汇流条1的周边通过在巴条1中流动的电流。磁场检测处理单元4布置在与周围部分2a分开的凹口2b处，并检测由磁场收集芯2收集的磁场。保持构件5配置在与磁场检测处理单元4夹持的区域的凹口2b中，与磁场检测处理单元4和磁场检测处理单元4接触。。

15. 发明专利

JP2014153054A Magnetic field detector, current detector, semiconductor integrated circuit, and magnetic field detection method 有权
标题翻译：磁场检测器，电流检测器，半导体集成电路和磁场检测方法
公开(公告)号：JP2014153054A
公开(公告)日：2014-08-25
申请号：JP2013019836
申请日：2013-02-04
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： OSANAGA TAKASHI , FURUKAWA TAISUKE , OJI HIROSHI
IPC分类号： G01R33/09 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To stabilize a resistance value of a reference magnetoresistive effect element and facilitate the control of a zero point output in a magnetic field detector for detection, thereby suppressing a detection error.SOLUTION: A magnetic field detector comprises: two or more detection elements 101, 102; two or more reference elements 111, 112; and a magnetic field applying wire 151 for applying bias magnetic fields to magnetization easy axis directions of free layers of the reference elements 111, 112. The reference elements and the detection elements have structures that laminate fixed layers where magnetization directions are fixed and free layers where magnetization directions changes in accordance with external magnetic fields. The reference elements 111, 112 includes: a state that the magnetization directions of the fixed layers and the magnetization directions of the free layers in non-magnetic fields are in parallel with each other; and a state that they are in anti-parallel with each other. The directions of bias magnetic fields applied to the state that they are in parallel with each other differs by 180° from that of bias magnetic fields applied to the state that they are in anti-parallel with each other. The detection elements 101, 102 have the magnetization directions of the fixed layers and the magnetization directions of the free layers in non-magnetic fields that are different from each other.
摘要翻译：要解决的问题：为了稳定参考磁阻效应元件的电阻值，并且便于控制用于检测的磁场检测器中的零点输出，从而抑制检测误差。解决方案：磁场检测器包括：两个或更多个检测元件101,102; 两个或更多个参考元件111,112; 以及用于将偏置磁场施加到参考元件111,112的自由层的易磁化轴方向的磁场施加线151.参考元件和检测元件具有将磁化方向固定的固定层和自由层的结构，磁化方向根据外部磁场而变化。参考元件111,112包括：非磁场中的固定层的磁化方向和自由层的磁化方向彼此平行的状态; 以及它们彼此反平行的状态。施加到它们彼此平行的状态的偏置磁场的方向与施加到它们彼此反平行的状态的偏置磁场的方向相差180°。检测元件101,102具有彼此不同的非磁场中的固定层的磁化方向和自由层的磁化方向。

16. 发明专利

JP2013229444A Magnetoresistive effect element, magnetic field detector, current detector, manufacturing method for magnetoresistive effect element 有权
标题翻译：磁感应元件，磁场检测器，电流检测器，磁阻效应元件的制造方法
公开(公告)号：JP2013229444A
公开(公告)日：2013-11-07
申请号：JP2012100187
申请日：2012-04-25
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： OSANAGA TAKASHI , FURUKAWA TAISUKE , KUROIWA TAKEHARU , FUKUMOTO HIROSHI
IPC分类号： H01L43/08 , G01R33/09 , H01F10/16 , H01F10/30 , H01F41/18 , H01L43/10 , H01L43/12
摘要： PROBLEM TO BE SOLVED: To provide a magnetoresistive effect element combining high accuracy high sensitivity characteristics in which hysteresis is suppressed, and easy manufacturing and integration.SOLUTION: In the magnetoresistive effect element, a free layer (8) consisting of a ferromagnetic layer having an easy axis of magnetization in a direction perpendicular to the film surface, a tunnel insulation layer (9), and an anchoring layer (10) consisting of a ferromagnetic layer magnetized in the film surface direction facing the free layer via the tunnel insulation layer are laminated. In a state where a magnetic field is not applied externally, projection components of the free layer and anchoring layer to the film surface of magnetization are orthogonal to each other.
摘要翻译：要解决的问题：提供一种结合高精度高灵敏度特性的磁阻效应元件，其中滞后被抑制，并且易于制造和集成。解决方案：在磁阻效应元件中，由铁磁层组成的自由层（8）在垂直于膜表面的方向上的易磁化磁化轴，隧道绝缘层（9）和由沿着通过隧道绝缘层面向自由层的膜表面方向被磁化的铁磁层组成的锚固层（10）被层压。在外部不施加磁场的状态下，自由层和锚定层的投影部分与磁化膜的表面正交。

17. 发明专利

JP2013057685A Magnetic field detection method 有权
标题翻译：磁场检测方法
公开(公告)号：JP2013057685A
公开(公告)日：2013-03-28
申请号：JP2012271344
申请日：2012-12-12
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： FURUKAWA TAISUKE , KUROIWA TAKEHARU , TOMOHISA SHINGO , OSANAGA TAKASHI , TAKI MASAKAZU , TAKADA YUTAKA , ABE YUJI , AKIYAMA KOICHI
IPC分类号： G01R33/09 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To provide a magnetic field detection method with high accuracy.SOLUTION: A magnetic field detection method for detecting an external magnetic field by using a tunnel magneto-resistance effect element 10 is provided. The magnetic field detection method includes a step of measuring an electric characteristic when applying a bias magnetic field Hb and an external magnetic field Hex which change the magnetization direction of a free layer 15 of the tunnel magneto-resistance effect element 10 at the same time or individually to the tunnel magneto-resistance effect element 10, and a step of calculating the external magnetic field on the basis of the electric characteristic of the tunnel magneto-resistance effect element 10 measured in response to the bias magnetic field Hb and the external magnetic field Hex.
摘要翻译：要解决的问题：提供高精度的磁场检测方法。解决方案：提供一种通过使用隧道磁阻效应元件10来检测外部磁场的磁场检测方法。磁场检测方法包括在施加偏置磁场Hb时测量电特性的步骤和同时改变隧道磁阻效应元件10的自由层15的磁化方向的外部磁场Hex，或单独地施加到隧道磁阻效应元件10，以及基于响应于偏置磁场Hb和外部磁场测量的隧道磁阻效应元件10的电特性来计算外部磁场的步骤十六进制。版权所有（C）2013，JPO＆INPIT

18. 发明专利

JP2012049213A Magnetoresistance effect element, magnetic field detector, position detector, rotation detector, and current detector using the same 有权
标题翻译：磁阻效应元件，磁场检测器，位置检测器，旋转检测器和使用其的电流检测器
公开(公告)号：JP2012049213A
公开(公告)日：2012-03-08
申请号：JP2010187928
申请日：2010-08-25
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： OSANAGA TAKASHI , KUROIWA TAKEHARU , FURUKAWA TAISUKE , TAKADA YUTAKA
IPC分类号： H01L43/08 , G01D5/18 , G01R15/20 , G01R33/02 , G01R33/09 , G11B5/39 , H01L43/10
摘要： PROBLEM TO BE SOLVED: To provide a magnetoresistance effect element that has high accuracy and can be easily formed, and a magnetic field detector, position detector, rotation detector, and current detector using the same.SOLUTION: A magnetoresistance effect element 1 includes four or more ferromagnetic layers 8, and three or more tunnel insulation layers 9 provided between the four or more respective ferromagnetic layers 8. In a state where a magnetic field Hex is not applied from the outside, magnetization 11 directions of the ferromagnetic layers 8 that sandwich the three or more respective tunnel insulation layers 9 and oppose the corresponding ferromagnetic layers 8 are mutually opposite directions.
摘要翻译：要解决的问题：提供具有高精度并且可以容易地形成的磁阻效应元件，以及使用其的磁场检测器，位置检测器，旋转检测器和电流检测器。解决方案：磁阻效应元件1包括四个或更多个铁磁层8，以及设置在四个或更多个相应的铁磁层8之间的三个或更多个隧道绝缘层9.在不从在外侧，夹着三个或更多个相应的隧道绝缘层9并与相应的铁磁层8相对的铁磁层8的磁化11方向是相反的方向。版权所有（C）2012，JPO＆INPIT

19. 发明专利

JP2010016087A Magneto-resistance effect device 审中-公开
标题翻译：磁阻效应器件
公开(公告)号：JP2010016087A
公开(公告)日：2010-01-21
申请号：JP2008173281
申请日：2008-07-02
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： TOMOHISA SHINGO , FURUKAWA TAISUKE , KUROIWA TAKEHARU
IPC分类号： H01L43/08
摘要： PROBLEM TO BE SOLVED: To provide a magnet-resistance effect device having a low resistive contact. SOLUTION: A contact layer 5 is formed on a substrate 1. An anchoring layer 6 is formed on the contact layer 5 and has a fixed magnetization direction. A tunnel insulating layer 7 is formed on the anchoring layer 6. A free layer 8 is formed on the tunnel insulating layer 7 and has a magnetization direction which changes by an external applied magnetic field. A contact plug 15 has the base coming into contact with only the contact layer 5. COPYRIGHT: (C)2010,JPO&INPIT

20. 发明专利

JP2007085980A Magnetic field detector and manufacturing method therefor 有权
标题翻译：磁场探测器及其制造方法
公开(公告)号：JP2007085980A
公开(公告)日：2007-04-05
申请号：JP2005277466
申请日：2005-09-26
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： FURUKAWA TAISUKE , KOBAYASHI HIROSHI , OSANAGA TAKASHI , KUROIWA TAKEHARU , HAIYAMA SATOKATSU , TAKI MASAKAZU
IPC分类号： G01R33/09 , H01L43/02 , H01L43/08 , H01L43/12
CPC分类号： G01R33/093 , B82Y25/00
摘要： PROBLEM TO BE SOLVED: To provide a magnetic field detector provided with a reference magnetism resistance element changing a resistor in an outside magnetic field in a simple configuration, and to provide its manufacturing method.
SOLUTION: The magnetic field sensitive device comprises a magnet, a sensitive magnetism resistance element provided with a layer structure, including a ferromagnetic body layer and changing the resistor by change of a magnetic direction of the ferromagnetic body layer, and the reference magnetism resistance element, having substantially the same structure as the sensitive magnetism resistance element and applying a magnetic field having saturated magnetic field strength or higher in a direction of sensing the magnetism of the ferromagnetic body layer from the magnet.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种磁场检测器，其设置有以简单的结构在外部磁场中改变电阻器的参考磁阻元件，并提供其制造方法。解决方案：磁场敏感器件包括磁体，具有层结构的敏感磁阻元件，包括铁磁体层，并且通过铁磁体层的磁方向的变化来改变电阻器，并且参考磁性电阻元件，其具有与敏感磁阻元件基本相同的结构，并且在从磁体感测铁磁体层的磁性的方向上施加具有饱和磁场强度或更高的磁场。版权所有（C）2007，JPO＆INPIT

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