专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 发明专利

JPS63314834A PLASMA PROCESSING EQUIPMENT 失效
公开(公告)号：JPS63314834A
公开(公告)日：1988-12-22
申请号：JP15015387
申请日：1987-06-18
申请人： MITSUBISHI ELECTRIC CORP
发明人： MINAMI TOSHIHIKO , ODERA HIROKI , HANAZAKI MINORU
IPC分类号： H01L21/302 , H01L21/3065 , H01L21/31 , H05H1/46
摘要： PURPOSE:To restrain the tube-wall sputtering, and increase the plasma processing speed for a substrate, by arranging a superconductor around a plasma reaction part in a plasma processing equipment for substrates in which electron cyclotron resonance is employed. CONSTITUTION:A plasma generating part 1 comprises a high frequency waveguide 7, a plasma generating glass tube 2 and a solenoid coil 4 connected to a DC power source 3. High frequency power is supplied to the waveguide 7 from a magnetron 9, and gas is supplied to the glass tube 2 through a gas supplying tube 10. Plasma is generated by electron cyclotron resonance. Around a plasma reaction part 11, a cooling vessel 21 is installed, which includes a high temperature superconductor 20 and a superconductor 20, and fixed to the periphery of the reaction part 11. When the vessel is filled with liquid nitro gen and the superconductor 20 is cooled at a temperature lower than or equal to the transition temperature, the superconductor 20 exhibits perfect diamagnet ism. Magnetic flux 16 generated by a coil 4 converges in the vicinity of a sub strate 13 in the reaction part 11. Thereby, the tube-wall sputtering is restrained and the high speed processing is enabled.

12. 发明专利

JPS6365623A PLASMA PROCESSOR 失效
公开(公告)号：JPS6365623A
公开(公告)日：1988-03-24
申请号：JP20983586
申请日：1986-09-05
申请人： MITSUBISHI ELECTRIC CORP
发明人： NAKANISHI KOICHIRO , HANAZAKI MINORU , ODERA HIROKI
IPC分类号： H01L21/302 , H01L21/205 , H01L21/3065 , H01L21/31
摘要： PURPOSE:To enable the even plasma processing to be performed with high precision with electronic cyclotron resonance extending over wide region to produce plasma within wide range by a method wherein a magnet producing a magnetic field in a plasma producer is supplied with current of DC + AC. CONSTITUTION:A plasma producer 1 is equipped with a magnet 7 producing a magnetic field changing unevenly par hour and periodically in the axial direction, a high-frequency waveguide 4 leading a high-frequency electric field perpendicular to the axial direction and a plasma producing glass tube 11. The high-frequency waveguide 4 is supplied with high-frequency power through a magnetron 5 while the plasma producing glass tube 11 is supplied with gas through a gas feeder pipe 9. The magnet 7 is supplied with current of DC + AC from a power supply 13 supplying current of DC + Ac so that the current may be changed periodically corresponding to the cycle of AC from the line connecting points A' to B' and A' to B' centered on the AB line connecting points A to B by means of properly adjusting the levels of DC and AC.

13. 发明专利

JP2003282542A Plasma treatment apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：JP2003282542A
公开(公告)日：2003-10-03
申请号：JP2002083681
申请日：2002-03-25
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： HANAZAKI MINORU , SUGAWARA KEIICHI , TAKI MASAKAZU , TSUDA MUTSUMI , SHINTANI KENJI , NOGUCHI TOSHIHIKO , YONEMURA TOSHIO
IPC分类号： H05H1/00 , H01J37/32 , H01L21/3065 , H05H1/46
CPC分类号： H01J37/32082 , H01J37/32935
摘要： PROBLEM TO BE SOLVED: To provide a plasma treatment apparatus which detects its apparatus- specific high-frequency characteristics for evaluating its process capability based on the detected high-frequency characteristics.
SOLUTION: A high-frequency current detector 11 of the plasma treatment apparatus 100 detects a high-frequency current generated when high-frequency power that does not generate plasma in a chamber 1 is fed to the chamber 1 by a high-frequency power source 10, and outputs the detected high-frequency current to a computer 12. The computer 12 compares the high-frequency current received from the high-frequency current detector 11 with a reference high-frequency current. If both the high-frequency currents agree with each other, the process performance of the plasma treatment apparatus 100 is evaluated as being normal, but if the both do not agree, the process performance is evaluated to be abnormal.
COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：提供一种等离子体处理装置，其基于检测到的高频特性来检测其设备特定的高频特性以评估其处理能力。解决方案：等离子体处理装置100的高频电流检测器11检测在室1中不产生等离子体的高频电力通过高频率被供给到室1时产生的高频电流电源10，并将检测到的高频电流输出到计算机12.计算机12将从高频电流检测器11接收的高频电流与参考高频电流进行比较。如果两个高频电流彼此一致，则等离子体处理装置100的处理性能被评价为正常，但是如果两者不一致，则评估处理性能是异常的。版权所有（C）2004，JPO

14. 发明专利

JP2000031252A SEMICONDUCTOR MANUFACTURE DEVICE WITH ELECTROSTATIC CHUCK AND WAFER REMOVAL METHOD THERE FROM 失效
公开(公告)号：JP2000031252A
公开(公告)日：2000-01-28
申请号：JP19301198
申请日：1998-07-08
申请人： MITSUBISHI ELECTRIC CORP
发明人： IKEDA TAKETOSHI , TSUKASAKI TAKASHI , DOBASHI YUUSUKE , HANAZAKI MINORU
IPC分类号： B23Q3/15 , H01L21/68 , H01L21/683 , H02N13/00
摘要： PROBLEM TO BE SOLVED: To prevent offset of a wafer, wafer breakage, etc., and reduce reduction of producibility, by detecting the thickness of an oxide film of a wafer rear before wafer treatment, and removing a wafer by applying a series of voltage sequence to an electrostatic chuck after treatment. SOLUTION: The thickness of a wafer rear oxide film 6 attaching to a rear of a wafer 1 is measured by an optical sensor 10, while the wafer 1 is attracted to an electrostatic chuck 2 and plasma which is specified treatment is generated. High frequency power is supplied to the electrostatic chuck 2 attracting the wafer 1, plasma is generated between the electrostatic chuck 2 and an grounding electrode 32, and a wafer is attracted to the electrostatic chuck 2. After a specified time passed and treatment is finished, high frequency voltage applied to the electrostatic chuck 2 is released and plasma is extinguished. Thereafter, voltage for removal according to the thickness of the wafer rear oxide film 6 attaching to a wafer rear is applied to the electrostatic chuck 2.

15. 发明专利

JPH06151383A METHOD OF ETCHING HIGH-PERMITTIVITY MULTICOMPONENT OXIDE FILM AND REFRACTORY METAL FILM, MANUFACTURE OF THIN-FILM CAPACITOR, AND PLASMA APPARATUS FOR FILM FORMATION 失效
公开(公告)号：JPH06151383A
公开(公告)日：1994-05-31
申请号：JP30270392
申请日：1992-11-12
申请人： MITSUBISHI ELECTRIC CORP
发明人： HANAZAKI MINORU , KUSUMI YOSHIHIRO , NANBA TAKANORI , FUJIWARA NOBUO , OKUDAIRA TOMOHITO , ITO HIROMI
IPC分类号： H01L21/302 , H01L21/3065 , H01L21/822 , H01L21/8242 , H01L21/8246 , H01L27/04 , H01L27/10 , H01L27/105 , H01L27/108
摘要： PURPOSE:To obtain an etching method in which a high-permittivity multicomponent oxide film and refractory metal or metal compound, having a high selectivity relative to a mask can be processed by etching the multicomponent oxide film using, as an etching gas, an organic gas which produces a volatile organic metal. CONSTITUTION:Methane (CH4) that is a hydrocarbon gas is supplied to the inside of a processing chamber 5 at a rate of 500cc per minute at a gas pressure of 3mTorr. A high frequency of 13.56MHz is applied from a high frequency power source 10 at 1000W, and a magnetic field having 200G is generated by causing a current to flow through a coil 11, whereby the combination of the high frequency and the magnetic field induces a magnetron discharge to produce plasma. A PbLaZrTiO3 film 3 of the multicomponent oxide film having a high dielectric constant is etched by the plasma. At this time, the temperature of electrodes is controlled to a constant temperature, and the temperature of a wafer is 150 deg.C immediately after the completion of the etching.

16. 发明专利

JPH0626195B2 失效
公开(公告)号：JPH0626195B2
公开(公告)日：1994-04-06
申请号：JP8386587
申请日：1987-04-07
申请人： MITSUBISHI ELECTRIC CORP
发明人： MINAMI TOSHIHIKO , NAKANISHI KOICHIRO , OODERA HIROKI , HANAZAKI MINORU
IPC分类号： H01L21/302 , H01L21/205 , H01L21/3065 , H01L21/31

17. 发明专利

JPH03222326A PLASMA PROCESSOR AND PLASMA PROCESSING 失效
公开(公告)号：JPH03222326A
公开(公告)日：1991-10-01
申请号：JP1612190
申请日：1990-01-29
申请人： MITSUBISHI ELECTRIC CORP
发明人： IKEGAMI KOJI , HANAZAKI MINORU
IPC分类号： C23F4/00 , H01L21/205 , H01L21/302 , H01L21/3065 , H01L21/31
摘要： PURPOSE:To enable high quality plasma processing to be performed rapidly by a method wherein multiple power supplies feed direct currents respectively to corresponding electromagnetic coils comprising an electromagnetic coil means. CONSTITUTION:When the processing of a semiconductor substrate 10 reaches the final stage after finishing the rapid processing in the primary and intermediate stage, the current values fed from the power supplies 13a-13e respectively to the electromagnetic coils 12a-12e are changed. For example, the current values fed to the electromagnetic coils 12a-12c positioned in the upper parts and those fed to the electromagnetic coils 12d and 12e positioned in the lower parts are changed respectively to 12A and 0A. Through these procedures, the electron cycrotron resonance region in magnetic flux density of 875 gauss moves to the upper part in a quartz made belljar 2 as shown by one point chain lines. That is, the plasma region in high density.high energy goes away from the semiconductor substrate 10. Resultantly, the processing in the semiconductor substrate 10 such as etching or film formation, etc., is weakened and decelerated. Therefore, the high quality processing can be performed rapidly.

18. 发明专利

JPS63275117A PLASMA TREATING EQUIPMENT 失效
公开(公告)号：JPS63275117A
公开(公告)日：1988-11-11
申请号：JP11151287
申请日：1987-05-06
申请人： MITSUBISHI ELECTRIC CORP
发明人： ODERA HIROKI , NAKANISHI KOICHIRO , HANAZAKI MINORU , MINAMI TOSHIHIKO
IPC分类号： H01L21/302 , H01L21/205 , H01L21/3065
摘要： PURPOSE:To control the diameter of a plasma flow, and enable the uniform plasma treatment for a large caliber substrate, by arranging high permeability magnetic material so as to surround a space in a vacuum vessel from the plasma-drawing-out port to the substrate. CONSTITUTION:A plate 14 made of high permeability magnetic material is arranged so as to surround a space from the plasma-drawing-out port 13a to a substrate 3, and made to reciprocate in the r-direction, by a driving motor 16 and a linear-motion-introducing machine 15. By making the magnetic material plate 14 reciprocate in the r-direction by the motor 16 in this fashion, changing the diameter of plasma flow 13, and applying a continuous reciprocating motion, the deviation of the plasma flow 13 can be eliminated. Thereby, the uniform plasma treatment and the processing of a large caliber substrate are enabled.

19. 发明专利

JPS63250126A PLASMA TREATMENT APPARATUS 失效
公开(公告)号：JPS63250126A
公开(公告)日：1988-10-18
申请号：JP8386487
申请日：1987-04-07
申请人： MITSUBISHI ELECTRIC CORP
发明人： MINAMI TOSHIHIKO , NAKANISHI KOICHIRO , ODERA HIROKI , HANAZAKI MINORU
IPC分类号： H01L21/302 , H01L21/205 , H01L21/3065
摘要： PURPOSE:To uniformly execute a plasma treatment of even a large-diameter substrate by a method wherein an electric current to be made to flow through a first solenoid coil and a second solenoid coil is controlled time-wise and the electric currents whose phases differ from each other are made to flow in succession through each coil of the solenoid coils so that the straight-line motion or the rotary motion of a plasma flow can be made possible in a wide region. CONSTITUTION:When high-frequency electric power is supplied by a magnetron 9 which is connected to a driving power supply 8, a high-frequency waveguide 7 forms a high-frequency electric field which is perpendicular to the axial direction; a gas is supplied to a glass tube 10. An electron in a plasma generated at a plasma generation part 1A is accelerated in the axial direction toward a plasma reaction part 11. If a waveform of an electric current to be supplied to a first solenoid coil 6 and a second solenoid coil 17 is changed time-wise and a rotary magnetic field is formed, a plasma flow 15 is rotated; accordingly, an amorphous silicon film whose film thickness is distributed uniformly is formed on a large-diameter substrate 13 in the plasma reaction part 11.

20. 发明专利

JPS6369232A PLASMA PROCESSING DEVICE 失效
公开(公告)号：JPS6369232A
公开(公告)日：1988-03-29
申请号：JP21482886
申请日：1986-09-10
申请人： MITSUBISHI ELECTRIC CORP
发明人： MINAMI TOSHIHIKO , NAKANISHI KOICHIRO , HANAZAKI MINORU , ODERA HIROKI
IPC分类号： H01L21/302 , H01L21/205 , H01L21/3065 , H01L21/31
摘要： PURPOSE:To perform plasma processing uniformly on a substrate with a large diameter, by mounting a mobile solenoid coil so that it moves on a surface perpendicular to a central axis of a fixed solenoid coil installed on the periphery of a plasma generation part. CONSTITUTION:On the periphery of a plasma generation part 1, the first fixed solenoid coil 7 and the second mobile solenoid coil 14, which is on the substrate 3 side of the coil 7 and moves on a surface perpendicular to a central axis of the coil 7, are installed. Plasma generated in the plasma generation part 1 is moved in the form of a plasma flow by the use of a moving magnetic field generated by the movement of the coil 14. Hence, plasma processing can be performed uniformly even on a substrate with a large diameter.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式