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11. 发明专利

JPH01214154A MANUFACTURE OF SEMICONDUCTOR DEVICE WITH BIPOLAR TRANSISTOR 失效
公开(公告)号：JPH01214154A
公开(公告)日：1989-08-28
申请号：JP4002088
申请日：1988-02-23
申请人： MITSUBISHI ELECTRIC CORP
发明人： HATANAKA MASAHIRO , KAYANO SHINPEI
IPC分类号： H01L27/06 , H01L21/331 , H01L21/8249 , H01L29/72 , H01L29/73 , H01L29/732
摘要： PURPOSE:To allow elements to be formed into fine structures, by forming a second impurity region which acts as an emitter or collector region after injecting and diffusing impurities into a substrate through openings which act as contact holes made in an insulation film. CONSTITUTION:An oxide film 23 which is formed on a substrate 1 is formed on a bipolar transistor where an N-type emitter is not formed yet and contact holes 24 are opened. The contact holes corresponding to source and drain regions as well as the other contact hole which is made at a part that is to be formed as an emitter are patterned so that they are exposed simultaneously. Further, arsenic or phosphorus is ion-implanted to form N-type impurity injection layers 26, 27, and 28 and then, N-type layers 26a, 27a, and 28a are formed by treating the above layers 26-28 with heat. Subsequently, a Bi-CMOS integrated circuit device is obtained by forming source and drain electrodes 29 and 30, an emitter electrode 31, a base electrode 32 as well as a collector electrode 33. Elements are highly integrated by causing them to be formed into fine structures.

12. 发明专利

JPS62120073A SEMICONDUCTOR MEMORY 失效
公开(公告)号：JPS62120073A
公开(公告)日：1987-06-01
申请号：JP26168685
申请日：1985-11-20
申请人： MITSUBISHI ELECTRIC CORP
发明人： SHIOMI TORU , KAYANO SHINPEI , NAKASE YASUNOBU , ANAMI KENJI
IPC分类号： H01L21/8229 , G11C11/41 , H01L27/10 , H01L27/102
摘要： PURPOSE:To operate a semiconductor memory at high speed and to improve the reliability by decreasing the thickness of an N type epitaxial layer only in a memory cell to increase a junction capacity between the base and the collector of the cell. CONSTITUTION:When an N type buried layer 2 is formed on a P type substrate 1, an N type epitaxial layer 3 is formed thereon, a peripheral circuit S is masked with a resist, and only a memory cell M is selectively oxidized and etched, the thickness of the layer 3 can be reduced as compared with the circuit S. Thus, when an N-type impurity is floated from the layer 2, a junction capacity between the base 6c and the collector 6a of a memory cell M increases to endure against information inversion of the memory cell due to alpha-ray to provide high reliability. It can also prevent the margin of the width of the cell from decreasing, provide high resistance against a software error, and operate at high speed. Since the N type epitaxial layer of the circuit S is thick, a junction capacity between the base and the collector decreases to operate at high speed.

13. 发明专利

JPS6022645A APPARATUS FOR EVALUATING HIGH-EFFICIENCY FILTER FOR AIR CLEANING 失效
公开(公告)号：JPS6022645A
公开(公告)日：1985-02-05
申请号：JP13225183
申请日：1983-07-18
申请人： MITSUBISHI ELECTRIC CORP
发明人： FUKUMOTO HAYAAKI , HAMA MASAHARU , KAYANO SHINPEI
IPC分类号： G01N15/08
摘要： PURPOSE:To check initial leakage, evaluation of moisture resistance and watertightness by mounting a filter whose efficiency is to be evaluated on a supporting base by setting an upstream side of said filter as an upper surface, filling the upper surface side with pure water and checking pure waterdrop leakage of the downstream side after staying it in a water gauge. CONSTITUTION:The high efficiency filter 1 to be evaluated is mounted on the supporting base 4 by setting the upstream side for transmitting air as the upper surface, and the pure water 10 is filled at the upper surface side of the filter 1. If the filter 1 has initial defects, it can be judged by an initial water quantity staying in the water gauge 6 or visual inspection of the state of water flowing down through a receiving dish 5. By measuring a water quantity leaked from the filter 1 in relation with time of a timer 7, an accelerated evaluation of moisture resistance and watertightness of the filter 1 is judged. For checks of leakage and collecting effect of the filter 1, the examination is performed for about 10-20hr by above-discribed evaluating apparatus to confirm the filter 1 of no leakage, the pure water filled therein is discharged gently to dry the apparatus, then the transmission test of high molecular latex is performed again.

14. 发明专利

JPS5764932A Electron bean exposure device 失效
标题翻译：电子束曝光装置
公开(公告)号：JPS5764932A
公开(公告)日：1982-04-20
申请号：JP14074080
申请日：1980-10-07
申请人： Mitsubishi Electric Corp
发明人： TAKANO HIROZOU , SATOU SHINICHI , FUKUMOTO HAYAAKI , KOTANI HIDEO , HARADA KOUJI , KAYANO SHINPEI
IPC分类号： H01L21/027 , H01J37/317 , H01L21/30
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3177
摘要： PURPOSE:To improve the microminiature pattern drawing efficiency of a super LSI or the like by providing a plurality of electron guns, controlling a plurality of emitted electron beams by one control system and simultaneously drawing a plurality of patterns of the same size, configuration and disposition. CONSTITUTION:Stabilized high voltage is applied, for example, from a power source 1 to two electron guns 9a, 9b to simultaneously emit two high speed electron beams 10a, 10b. The electron beams 10a, 10b pass through lenses 4, 5, are thus converged to extremely small diameter are simultaneously deflected and scanned by a scanning coil, and two patterns are simultaneously drawn on the main surface of a wafer 7. After they are simultaneously drawn completely, a stage for supporting the wafer 7 is moved at the prescribed pitch, is sequentially scanned on undrawn region, and patterns are formed. In this manner, the drawing time of large bore wafer can be shortened, thereby enhancing the efficiency of forming the pattern with the electron beams.
摘要翻译：目的：通过提供多个电子枪来提高超级LSI等的微型图形绘图效率，通过一个控制系统控制多个发射的电子束，并同时绘制多个相同尺寸，配置和布置的图案。构成：例如从电源1向两个电子枪9a，9b施加稳定的高电压，同时发射两个高速电子束10a，10b。电子束10a，10b通过的透镜4,5因此会聚到非常小的直径，同时被扫描线圈偏转和扫描，并且在晶片7的主表面上同时绘制两个图案。完全地，用于支撑晶片7的阶段以规定间距移动，在未拉伸区域上被顺序地扫描，并且形成图案。以这种方式，可以缩短大孔晶片的拉伸时间，从而提高用电子束形成图案的效率。

15. 发明专利

JPS5373129A FLOATING HEAD 失效
公开(公告)号：JPS5373129A
公开(公告)日：1978-06-29
申请号：JP14888976
申请日：1976-12-10
申请人： MITSUBISHI ELECTRIC CORP
发明人： KAYANO SHINPEI
IPC分类号： G11B21/21 , G11B5/60 , G11B17/32
摘要： PURPOSE:To make possible the reduction in weight and achieve the reduction in floating distance andthe improvement in follow-up characteristics by providing a through-hole resembling to the plane shape of a head body and forming floating plane on the periphery.

16. 发明专利

JPS6329583B2 失效
公开(公告)号：JPS6329583B2
公开(公告)日：1988-06-14
申请号：JP13123480
申请日：1980-09-20
申请人： MITSUBISHI ELECTRIC CORP
发明人： HARADA HIROTSUGU , SATO SHINICHI , FUKUMOTO HAYAAKI , TAKANO HIROZO , KOTANI HIDEO , KAYANO SHINPEI
IPC分类号： B01J19/08 , C23C16/50 , H01J37/32 , H01L21/18 , H01L21/205

17. 发明专利

JPS62125665A SEMICONDUCTOR MEMORY 失效
公开(公告)号：JPS62125665A
公开(公告)日：1987-06-06
申请号：JP26764685
申请日：1985-11-26
申请人： MITSUBISHI ELECTRIC CORP
发明人： ANAMI KENJI , KAYANO SHINPEI , NAKASE YASUNOBU , SHIOMI TORU
IPC分类号： H01L21/8229 , G11C11/41 , H01L27/10 , H01L27/102
摘要： PURPOSE:To operate at a high speed by forming a higher density P-type impurity region than a substrate in contact with an N type buried layer under the N type buried layer of a memory cell. CONSTITUTION:A P type diffused region 18 is formed in a P type substrate 1, an N type buried layer 2 is formed thereon, a P type base diffused region 4 is formed on an N type epitaxial layer 3, and N type emitter regions 5a-5c are formed in the region 4. A P-N junction capacity of the layers 2 and 18 is formed larger than that of the layer 2 and the substrate 1 to increase a junction capacity CTS between a collector and the substrate of multi-emitter transistor of a memory cell M to strengthen against information inversion due to alpha-ray. Thus, a memory having high speed and high reliability can be obtained.

18. 发明专利

JPS59214750A Continuous monitoring apparatus of sodium ion substance concentration 失效
标题翻译：酸性物质浓度的连续监测装置
公开(公告)号：JPS59214750A
公开(公告)日：1984-12-04
申请号：JP8952283
申请日：1983-05-20
申请人： Mitsubishi Electric Corp
发明人： FUKUMOTO HAYAAKI , HAMA MASAHARU , KAYANO SHINPEI
IPC分类号： G01N27/06 , G01N27/416 , G01N33/18 , G01N27/46
CPC分类号： G01N27/4162
摘要： PURPOSE:To observe continuously and with high response by a method wherein pure water is poured into a water bath open to the atmosphere and a measuring means of conductivity or specific resistivity is provided to a drain outlet. CONSTITUTION:Pure water whose specific conductivity is not less than 15MOMEGA. cm is supplied into a water storage bath 1 whose top surface has natural contact with the atmosphere from a water supply inlet 2 while the flow is adjusted by a valve 3. Excess drain water in a drain water sample taking out bath 4 is poured out through a drain outlet 5 at the rate of about 0.01m /hr and at the same time, while water is supplied to a sodium ion electrode meter 7 by a pump 6, the surface of the pure water in the water storage bath 1 itself is maintained constant. While the pure water is poured into the water storage bath continuously at the constant flow rate, sea salt particles in the atmosphere are dissolved naturally into the pure water to become ions and the change of the specific resistivity of the pure water caused by those ions is continuously measured by a specific resistivity meter 9 whose sensor 8 is provided to the drain water sample taking out bath 4 to observe the salt concentration in the atmosphere.
摘要翻译：目的：通过将纯水倒入通向大气的水浴中的方法连续观察并具有高响应性，并将导电性或电阻率测量装置提供给排水口。构成：比电导率不低于15MOMEGA的纯水。 cm供给到储水槽1中，该储水槽1的顶表面与供水口2大气自然接触，同时通过阀门3调节流量。排出的水样品取出浴4中的过量排出水通过以约0.01m 3 / hr的速度排出排水口5，同时通过泵6向钠离子电极计7供水，在储水槽1中的纯水表面本身维持不变。当纯水以恒定的流量连续地注入储水槽时，大气中的海盐颗粒自然地溶解在纯水中成为离子，并且由这些离子引起的纯水的电阻率的变化是通过电阻率传感器9连续测量传感器8，该传感器8被提供给排出的水样，取出浴4以观察大气中的盐浓度。

19. 发明专利

JPS5927757B2 JPS5927757B2 - 失效
公开(公告)号：JPS5927757B2
公开(公告)日：1984-07-07
申请号：JP1021078
申请日：1978-01-31
申请人： Mitsubishi Electric Corp
发明人： KAYANO SHINPEI
IPC分类号： C30B25/16 , H01L21/20 , H01L21/205

20. 发明专利

JPS5792827A MANUFACTURING DEVICE FOR SEMICONDUCTOR ELEMENT 失效
公开(公告)号：JPS5792827A
公开(公告)日：1982-06-09
申请号：JP17065380
申请日：1980-12-01
申请人： MITSUBISHI ELECTRIC CORP
发明人： KAYANO SHINPEI , KOTANI HIDEO , FUKUMOTO HAYAAKI , TAKANO HIROZOU , SATOU SHINICHI , HARADA HIROJI
IPC分类号： H01L21/203
摘要： PURPOSE:To inhibit the diffusion into an epitaxial layer of impurities in a substrate by combining a source component, which is ionized and accelerated, and a source component, which is not ionized and consequently is not accelerated. CONSTITUTION:At least one part of the source 3, which is heated by means of a heater 4 and evaporated, is ionized by a high-frequency field of an electrode 7, and emitted from an emission hole 5 together with the source not ionized. The source component ionized between these is accelerated by means of an electrode 8, and reaches the surface of the substrate 1. The source component not ionized also reaches the surface of the substrate 1 as molecular beams 6, and the epitaxial layer is obtained on the surface of the substrate 1. When a ratio and the acceleration voltage of the source component ionized are set properly, a temperature of the surface of the epitaxial layer can be controlled optionally. A temperature rise of substrate itself can be controlled by cooling the substrate 1 by means of a cooler 9, and the epitaxial layer hardly affected by impurities, etc. in the substrate can be obtained.

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