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11. 发明专利

JP2009253013A Substrate processing apparatus 审中-公开
标题翻译：基板加工设备
公开(公告)号：JP2009253013A
公开(公告)日：2009-10-29
申请号：JP2008099088
申请日：2008-04-07
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： ISHIMARU NOBUO
IPC分类号： H01L21/31 , C23C16/44
摘要： PROBLEM TO BE SOLVED: To make it possible to acquire adequate plasma even in a tip of a protecting tube which accommodates an electrode without reducing strength and elasticity of the electrode for generating plasma even if the temperature is high in a substrate processing apparatus.
SOLUTION: The substrate processing apparatus is provided with: a processing tube 46 which accommodates a plurality of substrates which are laminated; a heating means which heats the substrates; at least a pair of protecting tubes 71 which are inserted into the processing tube from the lower part of the processing tube, and have a curved part 76 and a straight line part 77 which extends in the lamination direction of the substrate; and electrodes 69 which are accommodated in the protection pipe, respectively, and to which high frequency power is applied. The electrode has a structure in which a member with the wire rod interweaved on a plane surface covers around a structured body with the wire rod wound in the shape of a coil.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：即使在基板处理装置中的温度高的情况下，也可以在容纳电极的保护管的尖端中获得足够的等离子体，而不会降低用于产生等离子体的电极的强度和弹性。解决方案：基板处理装置设置有：处理管46，其容纳层叠的多个基板; 加热基板的加热装置; 至少一对保护管71，其从处理管的下部插入处理管中，并且具有在基板的层叠方向上延伸的弯曲部76和直线部77; 以及分别容纳在保护管中并且施加高频电力的电极69。电极具有这样的结构，其中线材的交织在一个平面上的部件围绕结构体覆盖，线圈缠绕成线圈形状。版权所有（C）2010，JPO＆INPIT

12. 发明专利

JP2009212528A Substrate processing apparatus 有权
标题翻译：基板加工设备
公开(公告)号：JP2009212528A
公开(公告)日：2009-09-17
申请号：JP2009141686
申请日：2009-06-12
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： OGAWA SHIZUE , TOYODA KAZUYUKI , TAKEBAYASHI MOTONARI , ISHIMARU NOBUO , KONYA TADASHI
IPC分类号： H01L21/31 , C23C16/505 , C23C16/507
CPC分类号： C23C16/45578 , C23C16/345 , C23C16/452 , C23C16/45542 , H01L21/67109
摘要： PROBLEM TO BE SOLVED: To provide a substrate processing apparatus which is capable of generating plasma evenly and which is provided with an electrode having a structure for being mounted easily to the apparatus.
SOLUTION: The substrate processing apparatus has a processing chamber 201 for accommodating a wafer 200, a gas supply system for supplying a processing gas into the processing chamber 201, a gas discharging system for discharging the atmosphere in the processing chamber 201, at least a pair of electrodes 269 and 270 which bring the processing gas into an active state and which are formed of flexible members, a protective tube 275 for accommodating the electrodes 269 and 270 insertably and removably, an inactive gas supply system for supplying an inactive gas into the protective tube 275 and a controller 231. The electrodes 269 and 270 are accommodated in the protective tube 275 with at least one portion thereof bent, and the controller 231 controls the inactive gas supply system so that an inactive gas is supplied into the protective tube 275.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供能够均匀地产生等离子体并且具有电极的基板处理装置，该电极具有容易安装在该装置上的结构。解决方案：基板处理装置具有用于容纳晶片200的处理室201，用于将处理气体供给到处理室201中的气体供给系统，用于将处理室201中的气体排出的气体排出系统至少一对电极269和270，其使处理气体进入活性状态并由柔性构件形成;保护管275，用于容纳电极269和270可插入地和可移除地用于提供惰性气体的惰性气体供应系统进入保护管275和控制器231.电极269和270容纳在保护管275中，其中至少一部分弯曲，并且控制器231控制非活性气体供应系统，使得惰性气体被供应到保护管275中。管275.版权所有（C）2009，JPO＆INPIT

13. 发明专利

JP2009209447A Substrate processing apparatus 审中-公开
标题翻译：基板加工设备
公开(公告)号：JP2009209447A
公开(公告)日：2009-09-17
申请号：JP2008320353
申请日：2008-12-17
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： ISHIMARU NOBUO
IPC分类号： C23C16/505 , C23C16/455 , H01L21/31
CPC分类号： C23C16/45546 , C23C16/345 , C23C16/452 , C23C16/509 , H01J37/32357 , H01J37/32779
摘要： PROBLEM TO BE SOLVED: To provide a substrate processing apparatus capable of preventing nonuniformity of processing due to nonuniformity of voltage distribution.
SOLUTION: An ALD apparatus includes: a process chamber 32 configured to accommodate a boat charged with a plurality of wafers; gas supply systems configured to supply process gases to the wafers; a pair of discharge electrodes 57, 57 arranged in a stacked direction of the wafers; a high-frequency power source 58 configured to supply a high-frequency power to the pair of the discharge electrodes 57, 57; a variable impedance element 62 connected to a front end opposite to the high-frequency power 58 of the pair of the discharge electrodes 57, 57; and a controller configured to change an output frequency of the high-frequency power source 58. By moving the local minimum point of the voltage distribution through the change of the output frequency of the high-frequency power source during the plasma discharge, the plasma generation amount within a pair of discharge electrodes is made uniform. Thus, variation of the processing between the wafers stacked in the boat is suppressed to make the processing uniform over the total boat length.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够防止由于电压分布不均匀而引起的不均匀处理的基板处理装置。解决方案：ALD装置包括：处理室32，被配置为容纳装有多个晶片的船; 配置成将工艺气体供应到晶片的气体供应系统; 一对沿晶片堆叠方向排列的放电电极57,57; 配置为向一对放电电极57,57供给高频电力的高频电源58; 连接到与一对放电电极57,57的高频电源58相反的前端的可变阻抗元件62; 以及控制器，其被配置为改变高频电源58的输出频率。通过在等离子体放电期间通过改变高频电源的输出频率来移动电压分布的局部最小点，等离子体产生使一对放电电极内的量均匀。因此，抑制堆叠在船上的晶片之间的处理的变化，使处理在总船长上均匀。版权所有（C）2009，JPO＆INPIT

14. 发明专利

JP2007221038A Semiconductor manufacturing device 审中-公开
标题翻译：半导体制造设备
公开(公告)号：JP2007221038A
公开(公告)日：2007-08-30
申请号：JP2006042187
申请日：2006-02-20
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： SHIMA NOBUHITO , ISHIMARU NOBUO
IPC分类号： H01L21/31 , H01L21/02
摘要： PROBLEM TO BE SOLVED: To save energy by reducing the occurrence of noise from a semiconductor manufacturing device and reducing power loss on wiring.
SOLUTION: The semiconductor manufacturing device comprises: a device body 1, having a treatment furnace 29 for treating substrates, and conveyance sections 4, 6 for loading the substrates that have been carried in to the treatment furnace; and a power supply section 13 for supplying power to the treatment furnace. The power supply section has at least a coordinator 8 and a filter unit 10. The coordinator and the filter unit are provided close to the treatment furnace and are stored in an electrically sealed casing 15.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：通过减少半导体制造装置的噪声的发生来节省能量，并且减少布线上的功率损耗。解决方案：半导体制造装置包括：装置主体1，具有用于处理基板的处理炉29和用于装载已经运送到处理炉中的基板的输送部4,6; 以及用于向处理炉供电的供电部13。供电部分至少具有协调器8和过滤器单元10.协调器和过滤器单元设置在处理炉附近，并被存储在电气密封的壳体15中。（C）2007，JPO＆INPIT

15. 发明专利

JP2006303516A Processing tube 有权
标题翻译：加工管
公开(公告)号：JP2006303516A
公开(公告)日：2006-11-02
申请号：JP2006135356
申请日：2006-05-15
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： TOYODA KAZUYUKI , INOKUCHI YASUHIRO , TAKEBAYASHI MOTONARI , KONYA TADASHI , ISHIMARU NOBUO
IPC分类号： H01L21/31 , C23C16/50 , H01L21/316 , H01L21/8242 , H01L27/108
摘要： PROBLEM TO BE SOLVED: To provide a processing tube in a batch-type remote plasma processing unit. SOLUTION: The processing tube applied to the batch-type remote plasma processing unit is provided with a processing chamber 12 where a plurality of laminated wafers 1 are accommodated; and a discharge chamber 33 which is comparted from the chamber 12, to which processing gas 41 is supplied and can accommodate at least a pair of electrodes that generate plasma 40 inside the chamber 33. The processing tube can supply particles 42 activated by the plasma 40 inside the chamber 33 to the chamber 12. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：在间歇式远程等离子体处理单元中提供处理管。解决方案：施加到间歇式远程等离子体处理单元的处理管设置有容纳多个层压晶片1的处理室12; 以及从腔室12分离的排出室33，供给处理气体41，并且可容纳至少一对在室33内产生等离子体40的电极。处理管可以供应由等离子体40激活的颗粒42 在腔室33内部到腔室12.版权所有（C）2007，JPO＆INPIT

16. 发明专利

JP2003297818A Substrate treatment apparatus 有权
标题翻译：基板处理设备
公开(公告)号：JP2003297818A
公开(公告)日：2003-10-17
申请号：JP2002104011
申请日：2002-04-05
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： KONYA TADASHI , TOYODA KAZUYUKI , SATO TAKETOSHI , KAGAYA TORU , SHIMA NOBUHITO , ISHIMARU NOBUO , SAKAI MASANORI , OKUDA KAZUYUKI , YAGI YASUSHI , WATANABE SEIJI , KUNII YASUO
IPC分类号： C23C16/452 , C23C16/455 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To supply gas evenly to stacked substrates by unifying the flow volume and flow rate of gas supplied to the stacked substrates.
SOLUTION: Inside a reaction tube 6, a buffer chamber 17 formed with buffer chamber holes 3 having an identical opening area is installed. Inside the buffer chamber 17, a gas nozzle 2 formed with gas nozzle holes 4, whose opening area becomes larger going from the upstream towards the downstream of the gas, is installed. The gas, blown out from the gas nozzle 2, is introduced into the buffer chamber 17 once, and after the flow rate of the gas is uniformized, the gas is supplied to wafers 7 through the buffer chamber holes 3.
COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：通过统一供给到堆叠的基板的气体的流量和流量，将气体均匀地供给到堆叠的基板。解决方案：在反应管6内安装形成有具有相同开口面积的缓冲室孔3的缓冲室17。安装在缓冲室17内的气体喷嘴2形成有气体喷嘴孔4，其开口面积从气体的上游向下游变大。从气体喷嘴2吹出的气体被一次引入缓冲室17中，在气体的流量均匀化之后，气体通过缓冲室孔3被供给到晶片7。（C）2004，JPO

17. 发明专利

JP2011142347A Substrate processing apparatus 审中-公开
标题翻译：基板加工设备
公开(公告)号：JP2011142347A
公开(公告)日：2011-07-21
申请号：JP2011086587
申请日：2011-04-08
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： KONYA TADASHI , TOYODA KAZUYUKI , SATO TAKETOSHI , KAGAYA TORU , SHIMA NOBUHITO , ISHIMARU NOBUO , SAKAI MASANORI , OKUDA KAZUYUKI , YAGI YASUSHI , WATANABE SEIJI , KUNII YASUO
IPC分类号： H01L21/31 , C23C16/452
摘要： PROBLEM TO BE SOLVED: To uniformize a flow rate and a flow speed of gas supplied to a multilayer substrate, thereby uniformly supplying the gas to the mounted substrate.
SOLUTION: A substrate processing apparatus includes: a reaction tube for forming a reaction chamber for housing a plurality of substrates therein; a buffer chamber formed in the reaction tube; a first gas introduction part for introducing a first treatment gas into the reaction chamber; and a second gas introduction part for introducing a second treatment gas into the buffer chamber. The first gas introduction part includes a first gas supply opening. The second gas introduction part includes a gas introduction opening. The buffer chamber includes a plurality of second gas supply openings for supplying the second treatment gas into the reaction chamber. A remote plasma unit is arranged in the second gas introduction part. The second treatment gas is activated, and the activated second treatment gas is supplied into the reaction chamber from the plurality of second gas supply openings. The first treatment gas and the activated second treatment gas are alternately supplied multiple times, and a thin film is formed on surfaces of the substrates.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：为了均匀化供给到多层基板的气体的流量和流速，从而将均匀的气体供给到安装的基板。解决方案：一种基板处理装置，包括：反应管，用于形成用于容纳多个基板的反应室; 形成在反应管中的缓冲室; 用于将第一处理气体引入反应室的第一气体导入部; 以及用于将第二处理气体引入缓冲室的第二气体导入部。第一气体导入部包括第一供气口。第二气体导入部包括气体导入口。缓冲室包括用于将第二处理气体供应到反应室中的多个第二气体供给开口。第二气体导入部配置有远程等离子体单元。第二处理气体被激活，活化的第二处理气体从多个第二气体供给开口供给到反应室。第一处理气体和活化的第二处理气体被交替地供给多次，并且在基板的表面上形成薄膜。版权所有（C）2011，JPO＆INPIT

18. 发明专利

JP2007194668A Substrate processing device 有权
标题翻译：基板处理装置
公开(公告)号：JP2007194668A
公开(公告)日：2007-08-02
申请号：JP2007104727
申请日：2007-04-12
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： KONYA TADASHI , TOYODA KAZUYUKI , SATO TAKETOSHI , KAGAYA TORU , SHIMA NOBUHITO , ISHIMARU NOBUO , SAKAI MASANORI , OKUDA KAZUYUKI , YAGI YASUSHI , WATANABE SEIJI , KUNII YASUO
IPC分类号： H01L21/31 , C23C16/455
摘要： PROBLEM TO BE SOLVED: To homogeneously provide a gas to a laminated substrate by making flow rate and flow velocity of the gas supplied thereto uniform. SOLUTION: A substrate processing device is equipped with a reactor tube 6 forming a reaction chamber accommodating a lamination-arranged substrate, a first and second gas inlet sections, buffer chamber 17 provided in the reaction tube and having a gas feed opening, and electrode for generating plasma making raw gas in the buffer chamber activate. The first gas inlet section introduces raw gas into the buffer chamber. The buffer chamber forms a space for activating raw gas by the electrode therein. The raw gas introduced from the first gas inlet section is supplied from the gas feed opening into the reaction chamber. The second gas inlet section supplies raw gas without activating it into the reaction chamber, which is different from the raw gas to be activated. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：通过使供给的气体的流速和流速均匀地均匀地向层压基板提供气体。解决方案：基板处理装置配备有形成容纳层叠基板的反应室的反应管6，设置在反应管内的具有供气口的第一和第二气体入口部，缓冲室17，并且用于在缓冲室中产生等离子体制造原料气体的电极激活。第一气体入口部将原料气体引入缓冲室。缓冲室形成用于通过其中的电极活化原始气体的空间。从第一气体导入部导入的原料气体从气体供给口供给到反应室。第二气体入口部分将原料气体不进入反应室中，而不与要被活化的原料气体不同。版权所有（C）2007，JPO＆INPIT

19. 发明专利

JP2006279058A Heat treatment apparatus and method of manufacturing semiconductor device 有权
标题翻译：热处理装置及制造半导体器件的方法
公开(公告)号：JP2006279058A
公开(公告)日：2006-10-12
申请号：JP2006135355
申请日：2006-05-15
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： TOYODA KAZUYUKI , INOKUCHI YASUHIRO , TAKEBAYASHI MOTONARI , KONYA TADASHI , ISHIMARU NOBUO
IPC分类号： H01L21/316 , C23C16/455 , H01L21/3065 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To provide a heat treatment apparatus capable of obtaining large throughput and increasing uniformity of the temperature of a treated substrate, and a method of manufacturing a semiconductor device.
SOLUTION: An ALD apparatus for alternately supplying a plurality of treatment gas on the front surface of wafer 1 and forming a film on the wafer 1 using an ALD method, has a boat 2 for holding the plurality of wafer 1, a treatment chamber 12 for housing the wafer 1 and the boat 2, a heater 14 for heating the wafer 1, a gas supply pipe 21 for alternately supplying the plurality of treatment gas in the treatment chamber 12, a discharge pipe 16 for discharging atmosphere in the treatment chamber 12, and a rotation axis 19 for rotating the boat 2 for rotating the wafer during the treatment of the wafer 1.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：解决的问题：提供能够获得大的生产量和提高处理过的基板的温度均匀性的热处理设备，以及制造半导体器件的方法。解决方案：一种用于在晶片1的前表面上交替供应多个处理气体并且使用ALD方法在晶片1上形成膜的ALD装置具有用于保持多个晶片1的舟皿2，处理用于容纳晶片1和舟皿2的室12，用于加热晶片1的加热器14，用于交替地供应处理室12中的多个处理气体的气体供给管21，用于排出处理中的气氛的排出管16 室12，以及用于在处理晶片1期间旋转用于旋转晶片的舟皿2的旋转轴19.版权所有（C）2007，JPO＆INPIT

20. 发明专利

JP2006156695A Substrate treatment device 审中-公开
标题翻译：基板处理装置
公开(公告)号：JP2006156695A
公开(公告)日：2006-06-15
申请号：JP2004344948
申请日：2004-11-29
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： ISHIMARU NOBUO
IPC分类号： H01L21/31 , C23C16/452
摘要： PROBLEM TO BE SOLVED: To provide a substrate treatment device which prevents generation of plasma damage.
SOLUTION: An ALD device has a process tube 31 wherein a processing chamber 32 for carrying out batch treatment of a plurality of wafers 1 is formed, a gas supply tube 38 for supplying dichlorosilane gas 73 to the treatment chamber 32, a gas supply tube 50 for supplying ammonia gas 71 to the treatment chamber 32, an exhaust tube 35 for exhausting the treatment chamber 32, a pair of discharge electrodes 57, 57 for exciting plasma in the treatment chamber 32 and a plasma chamber 48 having an outlet 49 for blowing out active species 72 excited by plasma to the treatment chamber 32. In the ALD device, a detection electrode 65 is disposed in one side of the plasma chamber 48 inside the treatment chamber 32, and a high frequency current detector 66 is connected to the detection electrode 65. Since a high frequency current leaked from the plasma chamber 48 can be detected in an early stage, countermeasures to prevent plasma damage in the wafer 1 of the treatment chamber 32 can be taken.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种防止产生等离子体损伤的基板处理装置。解决方案：ALD装置具有处理管31，其中形成用于进行多个晶片1的批处理的处理室32，用于将二氯硅烷气体73供应到处理室32的气体供应管38，气体用于向处理室32供应氨气71的供应管50，用于排出处理室32的排气管35，用于在处理室32中激发等离子体的一对放电电极57,57和具有出口49的等离子体室48 用于将由等离子体激发的活性物质72吹送到处理室32.在ALD装置中，检测电极65设置在处理室32内的等离子体室48的一侧，高频电流检测器66连接到检测电极65.由于可以在早期阶段检测到从等离子体室48泄漏的高频电流，所以可以采取防止处理室32的晶片1中的等离子体损伤的对策。版权所有（C）2006，JPO＆NCIPI

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