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11. 发明专利

JPH0145150B2 失效
公开(公告)号：JPH0145150B2
公开(公告)日：1989-10-02
申请号：JP8962782
申请日：1982-05-28
申请人： HITACHI LTD
发明人： TANAKA KATSUYUKI , SHIMIZU ISAO
IPC分类号： G11B17/02 , G11B17/30 , G11B17/32

12. 发明专利

JPH01125872A MANUFACTURE OF SEMICONDUCTOR DEVICE EQUIPPED WITH PRESSURE SENSING ELEMENT 失效
公开(公告)号：JPH01125872A
公开(公告)日：1989-05-18
申请号：JP14571688
申请日：1988-06-15
申请人： HITACHI LTD
发明人： SHIMIZU ISAO , YAMADA KAZUJI
IPC分类号： H01L29/84 , G01L9/00 , G01L9/04
摘要： PURPOSE:To obtain a flattened surface after etching by a method wherein a high concentration layer is buried under a pressure sensing element region for the elimination of unevenness in a thin film section (diaphragm). CONSTITUTION:A photoresist mask 14 is provided on the rear side (plane [100]) of a p-type substrate 6. Anisotropic etching is accomplished in a KOH etchant or the like for the provision of a deep recess 15. The anisotropic etching is completed when the recess 15 is as deep as to reach an n -type buried layer 9. That is, the etching rate automatically slows down when the etchant reaches the high concentration n -type buried layer 9, which removes foreign matters or smudges, and unevenness attributable to partial etching, from the substrate rear side. The result is a deep recess 15 with its bottom, or the n -type buried layer 9, etched flat.

13. 发明专利

JPS61214282A MAGNETIC MEMORY DEVICE 失效
公开(公告)号：JPS61214282A
公开(公告)日：1986-09-24
申请号：JP5447085
申请日：1985-03-20
申请人： HITACHI LTD
发明人： ISOZAKI JUN , YONEDA FUKUO , SHIMIZU ISAO , TANAKA KATSUYUKI
IPC分类号： G11B20/18
摘要： PURPOSE:To prevent the annihilation of data information during a reproduction and to improve a reliability of a reproducing data by comparing the present retry number with a stored maximum retry number, and transferring the address information to a preliminary address when it is more than the stored number. CONSTITUTION:During a generation of a bit error, an error status signal showing this condition is transmitted to a counter 26 to advance the contentes a little. This value is compared with the maximum retry number up to previous time of a memory 28 by entering a comparator 27, and when the value does not reach to it, a recording operation to the same address is repeated. Even when the recording is repeated by the number of the maximum retryings of the memory 28, in the case when the bit error is detected, a position signal of the circuit 30 for setting track position is amplified 31 by a command of a controller 29, an actuator 32 is moved in the direction of an arrow to position a magnetic head 5 to a preliminary track of a magnetic disk 1 and transfer the data information to the preliminary address on the preliminary track.

14. 发明专利

JPS61137363A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：JPS61137363A
公开(公告)日：1986-06-25
申请号：JP25915984
申请日：1984-12-10
申请人： Hitachi Ltd
发明人： SHIMIZU ISAO , HOYA KAZUO , KANEKO KENJI , KIMURA MASATOSHI
IPC分类号： H01L21/8224 , H01L21/331 , H01L21/82 , H01L27/082 , H01L29/08 , H01L29/73
CPC分类号： H01L29/0821
摘要： PURPOSE:To accurately set the ratio of the amplitudes of current produced from collector regions with good reproducibility by forming a quasi-collector region of electrically floated state at both ends of a plurality of collector regions arranged with respect to emitter region and base region. CONSTITUTION:An N type layer 1 is epitaxially grown on a semiconductor substrate, used for a common base layer, and an N type base electrode diffused layer 3 having a pectinated projection 6 for preventing collector regions 51-56 for forming a plurality of P-N-P bipolar transistors theta1-theta6 of lateral structure from interfering therebetween are formed therein. A common P type emitter region 4 is formed at the projection 6 side, disposed in the projection 6 to form transistors theta1-theta6 having collector regions C1-C6. In this configuration, quasi- collector region 50 of electrically floated state is formed while separating by the projection 6 at both side of the transistors theta1-theta6, and the ratio of the amplitudes of the currents produced from the regions C1-C6 is set accurately.
摘要翻译：目的：通过在相对于发射极区域和基极区域布置的多个集电极区域的两端形成电浮置状态的准集电极区域，准确地设定由集电极区域产生的电流的振幅比，具有良好的再现性。构成：在用于公共基底层的半导体衬底上外延生长N +型层1，并且N +型基极扩散层3具有用于防止集电区51-56用于防止在其中形成多个横向结构的PNP双极晶体管theta1-θ6从而妨碍它们。普通的P型发射极区域4形成在突起6侧，设置在突起6中以形成具有集电极区域C1-C6的晶体管theta1-θ6。在该配置中，通过由晶体管θ1-θ6的两侧的突起6分离而形成浮置状态的准集电极区域50，并且准确地确定从区域C1-C6产生的电流的幅度比。

15. 发明专利

JPS6151866A Semiconductor integrated circuit device 失效
标题翻译：半导体集成电路设备
公开(公告)号：JPS6151866A
公开(公告)日：1986-03-14
申请号：JP17324484
申请日：1984-08-22
申请人： Hitachi Ltd
发明人： SHIMIZU ISAO , NAGAI YASUO , KIMURA MASATOSHI , KANEKO KENJI
IPC分类号： H01L21/8222 , H01L21/822 , H01L27/04 , H01L27/06 , H01L27/082 , H01L27/118
CPC分类号： H01L27/11801
摘要： PURPOSE:To improve the reliability and degree of integration of a device with a signal processing circuit, to which speeding-up is required, and an output circuit, to which high withstanding voltage is needed, by forming an element in small size at the central section of a substrate, arranging elements, size thereof is increased in succession, around the element and shaping an element in the largest size to a periphery. CONSTITUTION:When an IC for driving an anode (a grid) is laid out, a complementary Schottky transistor logic CSTL as a high-speed logic circuit is disposed near the center of a chip 1, and a lower withstanding-voltage element is arranged in a region such as one 2 shown in dot-dot dash lines so as to surround the CSTL. A high withstanding-voltage element is shaped in a region such as one 3 shown in a dot-dash line in the periphery of the chip so as to surround the low withstanding-voltage element forming region. Level conversion circuits such as level conversion circuits 10 for input signals and a low withstanding-voltage transistor, etc. included in a high withstanding-voltage driver are formed in the low withstanging-voltage element region 2. A transistor such as a high withstanding-voltage one for the high withstanding-voltage driver is shaped in the high withstanding-voltage element forming region 3.
摘要翻译：目的：通过在中央处形成小尺寸的元件，提高器件与需要加速的信号处理电路的可靠性和集成程度以及需要高耐压的输出电路基板的横截面，排列元件的尺寸依次增加，并且将最大尺寸的元件成形为周边。构成：当布置用于驱动阳极（电网）的IC时，作为高速逻辑电路的互补肖特基晶体管逻辑CSTL设置在芯片1的中心附近，并且将较低的耐受电压元件布置在像点划线之间的一个区域2，以围绕CSTL。高耐压元件在芯片周边的点划线所示的区域中成形，以便围绕低耐压元件形成区域。在低电压电压元件区域2中形成有诸如包括在高耐压驱动器中的用于输入信号的电平转换电路10和低耐压晶体管等的电平转换电路。诸如高承受电压的晶体管，在高耐压元件形成区域3中形成用于高耐压驱动器的电压。

16. 发明专利

JPS60233856A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS60233856A
公开(公告)日：1985-11-20
申请号：JP8770484
申请日：1984-05-02
申请人： HITACHI LTD
发明人： KIMURA MASATOSHI , OKABE TAKEAKI , SAKAMOTO MITSUZOU , HOUYA KAZUO , SATONAKA KOUICHIROU , KOUDA TOYOMASA , SHIMIZU ISAO , KANEKO KENJI
IPC分类号： H01L21/8224 , H01L21/331 , H01L27/082 , H01L29/72 , H01L29/73
摘要： PURPOSE:To obtain the lateral p-n-p transistor of high performance and high integration by a method wherein a collector is arranged by surrounding the emitter of a lateral transistor whose base is an n type Si substrate, and an n layer is brought into contact with the collector side and an n layer reaching an n buried layer with the outside. CONSTITUTION:An n-epitaxial layer 4 on the Si substrate 1 in which an n layer 2 has been buried is isolated by a p-layer 3, and a p-emitter is arranged by surrounding a p-collector 5b. An n well 9 is formed in the emitter 5a to the collector 5b side, and further an n layer 10 of 1 figure or more higher concentration than that of the n layer 9 is provided in contact with the outside of the emitter 5a and then connected to the n buried layer 2. This construction enables the reduction of the base width by preventing punch-through by means of the n well 9. Since the arrangement of the emitter and the collector is exchanged, which are then surrounded by the n layer 10 and the n buried layer 2, the improvement in hFE and the reduction in element area can be contrived; then, the lateral p-n-p transistor of high performance and high integration can be obtained.

17. 发明专利

JPS60209967A Flexible magnetic disk memory 失效
标题翻译：柔性磁盘存储器
公开(公告)号：JPS60209967A
公开(公告)日：1985-10-22
申请号：JP6333384
申请日：1984-04-02
申请人： Hitachi Ltd
发明人： SHIMIZU ISAO , TANAKA KATSUYUKI , YONEDA FUKUO , ISOZAKI JIYUN
IPC分类号： G11B25/04 , G11B17/22
摘要： PURPOSE: To attain the use of all laminated disks by attaching the disks which have larger bending strength than the recording disks and can be bent toward the lamination of disks to those at both ends of those laminated recording disks with a space approximately equal to the lamination space of the recording disks.
CONSTITUTION: Flexible recording disks 2 are laminated with equal pitches and held between end plates 3 to obtain a lamination matter 1 serving as a rotor. This matter 1 is fixed to a spindle 7 with a bolt 8 and revolved in a body with the spindle 7. A shift stage 4 set outside the matter 1 moves a blade 5 to which a magnetic head 6 is buried toward X and Y. The plates 3 are laminated with a space approximately equal to the lamination pitch of the disks 2 and have shapes having larger bending strength than the disk 2. Thus the disks 2 set close to the plates 3 can also be used as files. This increases the record capacity of this magnetic disk memory, then improves the using efficiency of a lamination disk.
COPYRIGHT: (C)1985,JPO&Japio
摘要翻译：目的：为了通过安装具有比记录盘更大的弯曲强度的盘来实现所有层压盘的使用，并且可以朝着与这些层压记录盘的两端的盘的层叠方向弯曲大致等于层压的空间记录盘的空间。构成：柔性记录盘2以等间距叠层并保持在端板3之间，以获得用作转子的层压件1。该物品1用螺栓8固定在主轴7上并与主轴7旋转在主体中。设置在物体1的外面的变速台4使朝向X和Y的磁头6被埋入的叶片5移动。板3以大致等于盘2的层叠间距的空间层叠，并且具有比盘2更大的弯曲强度的形状。因此，靠近板3设置的盘2也可以用作文件。这增加了该磁盘存储器的记录容量，从而提高了层压盘的使用效率。

18. 发明专利

JPS60136965A MAGNETIC HEAD ACCESS DEVICE 失效
公开(公告)号：JPS60136965A
公开(公告)日：1985-07-20
申请号：JP24397783
申请日：1983-12-26
申请人： HITACHI LTD
发明人： SHIMIZU ISAO , YONEDA FUKUO , TANAKA KATSUYUKI , ISOZAKI JIYUN
IPC分类号： G11B21/02 , G11B5/54 , G11B17/02
摘要： PURPOSE:To insert and disconnect a separating blade smoothly and surely by moving a magnetic head while keeping the separating blade standstill in a disc in a large capacity magnetic storage device where lots of flexible magnetic discs are stacked. CONSTITUTION:The separating blade 9 is positioned as shown in short dashes lines at first. Then a current flows to a wire SMA15 so as to turn the separating blade 9 counter clockwise and insert it into a disc 2 for positioning as shown in solid lines. When the current of the wire SMA15 is interrupted when the recording/reproduction is finished, the separating blade 9 is stood up by nearly 50 deg. to the outside of the disc 2 by the restoring force of a spiral spring 12 and the blade is restored to the state shown in short dashes lines. Thus, the mass of the head to be moved is reduced to 1/10-1/20 in this way and the resonance point is increased by 3-4 times, then high speed accessing is attained.

19. 发明专利

JPS6066379A MAGNETIC DISC DEVICE 失效
公开(公告)号：JPS6066379A
公开(公告)日：1985-04-16
申请号：JP17420883
申请日：1983-09-22
申请人： HITACHI LTD
发明人： TANAKA KATSUYUKI , SHIMIZU ISAO , YONEDA FUKUO , ISOZAKI JIYUN
IPC分类号： G11B33/14 , G11B25/04
摘要： PURPOSE:To improve the handling of disc replacement by constituting a disc like a cartridge, moving the cartridge optionally by a rail formed on a body frame and making a spindle and a driving motor attachable/detachable through a chucking device. CONSTITUTION:In case of recording/reproducing the information on the disc 2, the cartridge 3 incorporating a necessary disc is inserted into the body frame 1. After the insertion of the cartridge 3, an oscillation member 18 is oscillated on the cartridge loading/unloading side and the driving shaft 4a of a driving motor 4 is coupled with a spindle 8 by the chucking device 22. The disc 2 is rotated by driving the driving motor 4, a blade 5 is driven by actuating an actuator 6 and the surface of the disc 2 is accessed by the blade 5 having a head 16 to execute prescribed information processing.

20. 发明专利

JPS6038886A PRESSURE SENSING SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS6038886A
公开(公告)日：1985-02-28
申请号：JP14637883
申请日：1983-08-12
申请人： HITACHI LTD
发明人： SHIMIZU ISAO
IPC分类号： G01L9/04 , G01L9/00 , H01L29/84
摘要： PURPOSE:To eliminate the cancellation due to a distortion in a corner part and to prevent variation of the characteristics in an Si diaphram type pressure sensor by connecting a diffusion resistance part to the corner part consisting of a high concentration diffusion layer with a specified angle. CONSTITUTION:A pair of gage diffusion resistance layers 2a and 2b is formed in a direction on a plane of a wafer, for example. The diffusion layers 7a and 7b which will become corner parts are formed in the direction which makes an angle of 45 deg. with the diffusion resistance layers 2a and 2b, namely in the directions and and a pair of the diffusion resistance layers 2a and 2b are connected to those. As the straight diffusion resistances 2a and 2b are arranged in the direction , these show the maximum resistance variation whereas the corner parts 7a and 7b are arranged in the direction and and the resistance variation due to a distortion is minimum and the anisotropy of pressure can be eliminated.

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