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    • 11. 发明专利
    • SEMICONDUCTOR MEMORY DEVICE
    • JPS574152A
    • 1982-01-09
    • JP7818880
    • 1980-06-10
    • FUJITSU LTD
    • ITOU HIDEAKIYAMAUCHI TAKAHIKO
    • G11C11/41G11C5/02G11C5/14G11C11/401H01L21/822H01L23/528H01L27/02H01L27/04H01L27/10
    • PURPOSE:To improve a signal transmittance speed between a buffer circuit and a decoder circuit by a method wherein both a signal line and a power supply line arranged around an inner circuit are wired only at the outside part of the wiring connecting the inner circuit with the buffer circuit. CONSTITUTION:Memory cell 2 and decoder circuit 3 are arranged at a central area of the semiconductor memory device 1'. Grounding wire 7' is arranged in an area surrounding these component elements. Several kinds of buffer circuits 41 to 46 are arranged below the grounding wire 7' or adjacent to the grounding wire 7'. A terminal of each of the circuits 41 to 46 which is applied for a connection between the decoder 3 and the cell 2 is arranged at an inner area of loop formed by the grounding wire 7', power supply line 6' is arranged at the outermost circumferential area of device 1', and a group of signal lines 5' among the circuits 41 to 46 is arranged inside of it. Thus, no bridge is found at the signal line to which a high speed signal transmittance is preferred, that is, the terminal or signal line arranged inwardly of the grounding wire 7' for the circuits 41 to 46, so a high speed signal transmittance may be performed.
    • 15. 发明专利
    • Fixing system of frame synchronism
    • 框架同步固定系统
    • JPS58221537A
    • 1983-12-23
    • JP10454382
    • 1982-06-17
    • Fujitsu Ltd
    • ITOU HIDEAKI
    • H04L7/08H04J3/06
    • H04J3/0605
    • PURPOSE:To ensure synchronism in a short time, by securing the frame synchronism after putting frame synchronizing pattern into plural signals with multi- phase modulation to transmit them then performing comparison of patterns for all sequences at the receiving side to ensure the frame synchronism. CONSTITUTION:Data 1 and 2 are applied with FM31 at the transmitting side, and frame signals S1 and S2 supplied from a frame synchronizing signal generator 32 are applied to synthesizers 33 and 34 and transmitted as signals of sequences 1 and 2 respectively. While the signal of the sequence 1 is applied to a comparator 35 and a frequency converter 39, and the signal of the sequence 2 is applied to a comparator 36 and the converter 39 respectively at the receiving side. These comparators 35 and 36 compare the signals of sequences 1 and 2 with signals S1 and S2 supplied from a frame synchronizing signal generator 38 and the generator 38 of the sequence 2 respectively. The generator 38 is advanced when the patterns are coincident with each other between both signals. The same comparison is peformed again at the frame synchronizing signal adding position. If the frame synchronism is established, the additional bits are removed. Then a frequency conversion is carried out, and original signal data 1 and 2 are transmitted.
    • 目的:为了在短时间内确保同步,通过将帧同步模式置于多相信号中进行多相位调制传输,确保帧同步,然后执行接收侧所有序列的模式比较,确保帧同步。 构成:数据1和2在发送侧应用FM31,并且从帧同步信号发生器32提供的帧信号S1和S2被分别施加到合成器33和34并分别作为序列1和2的信号传输。 虽然序列1的信号被施加到比较器35和频率转换器39,并且序列2的信号分别在接收侧被施加到比较器36和转换器39。 这些比较器35和36分别比较序列1和2的信号与从帧同步信号发生器38和序列2的发生器38提供的信号S1和S2。 当图案在两个信号之间彼此重合时,发生器38前进。 在帧同步信号添加位置再次进行相同的比较。 如果帧同步建立,则删除附加位。 然后进行频率转换,并且发送原始信号数据1和2。
    • 16. 发明专利
    • MEASURING CIRCUIT FOR SIGNAL BREAK TIME
    • JPS5825736A
    • 1983-02-16
    • JP12505181
    • 1981-08-08
    • FUJITSU LTD
    • ITOU HIDEAKIMORITA TOSHIYUKIHODOHARA KIYOAKI
    • H04B1/74H04B17/00
    • PURPOSE:To measure accurately the signal break time for current/stand-by switching or the like, by counting pulses having a constant period to measure the signal break time. CONSTITUTION:The output signal of a reference signal generator 21 is applied to not only a signal transmitting device 22 but also a phase adjuster 23. Since the delay time of the phase adjuster 23 is adjusted so as to be equal to the signal delay time in the transmitting device 22, an output 1 of the signal transmitting device 22 and an output 2 of the phase adjuster 23 have the same phase if no signal break is generated, and an output 3 of an exclusive OR gate 24 becomes ''0''. If a signal break is generated in the transmitting device 22, a ''1'' and ''0'' repeat signal corresponding to the time of the signal break appears in the output of the exclusive OR gate 24. Thus, the pulse output of an oscillator 27 is generated in an output signal 7 of an AND gate 28 during the signal break time, and a counter 29 counts the number of pulses to measure the signal break time.
    • 17. 发明专利
    • ASYNCHRONOUS TYPE STATIC MEMORY
    • JPS57150188A
    • 1982-09-16
    • JP3579181
    • 1981-03-12
    • FUJITSU LTD
    • ITOU HIDEAKISUZUKI ATSUSHI
    • G11C11/417G11C11/419
    • PURPOSE:To achieve equi-potential for data bus of an asynchronous static memory in a high speed in a small current consumption, by providing a short circuit with a pair of data bus lines and connecting the bus lines to a low potential power supply for a short time. CONSTITUTION:A pair of bit lines DB and anti-DB' of an asynchronous static memory are provided with a short circuit ST consisting of P type transistors (TRs) P1-P3 connecting both the lines and gate N type TRs N5 and N6 connecting the bit lines to a low potential power supply VSS. The TRs P1-P3 are controlled with a chip selection clock CS1 and the TRS N5 and N6 are controlled with a clock CS2 delayed for a prescribed amount from the clock CS1. Thus, they are connected to the power supply VSS only at a part of period of the standby period and the lines are of equal potential in high speed with a small power consumption. Then, the access at chip selection is made high in speed.
    • 20. 发明专利
    • STATIC TYPE RANDOM ACCESS MEMORY
    • JPS56117389A
    • 1981-09-14
    • JP1801980
    • 1980-02-16
    • FUJITSU LTD
    • ITOU HIDEAKISHIMADA HIROSHI
    • G11C11/41G11C7/10G11C11/417G11C11/419
    • PURPOSE:To reduce the access time of readout for other cells immediately after the cell write-in in common use of the bit line, by connecting a short-circuit transistors showing ON resistance between a pair of bit lines and a pair of data bus lines. CONSTITUTION:RAM is constituted with a number of memory cells MC... between a pair of bit lines BL, BLB lines and short-circuit transistors T3, T4 showing ON- resistance are connected between a pair of data bus lines BS and BSB. The transistors T3, T4 are ON at readout/write-in, and a current flows via the transistor T3 until the potential difference between the lines BL and BLB after the information is written in the cell MC1. This is the same for the transistor T4, that is, the time when the potential between BL, BLB and the potential of the outputs SD, SDB of the sense amplifier SA are in agreement, is made faster than the case without the transistors T3, T4, and the readout access time for other common cells of the bit line pairs immediately after the write-in can be decreased.