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121. 发明专利

JP2003060310A Semiconductor optical element and manufacturing method therefor 有权
标题翻译：半导体光学元件及其制造方法
公开(公告)号：JP2003060310A
公开(公告)日：2003-02-28
申请号：JP2001249831
申请日：2001-08-21
申请人： Nippon Telegr & Teleph Corp , 日本電信電話株式会社
发明人： OGASAWARA MATSUYUKI , KONDO SUSUMU , IGA RYUZO , KONDO YASUHIRO
IPC分类号： G02F1/025 , H01S5/026 , H01S5/20 , H01S5/22 , H01S5/227
CPC分类号： H01S5/0265 , H01S5/2059 , H01S5/2226 , H01S5/227 , H01S5/2275 , H01S5/3072
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor optical element, having a structure that can control the diffusion of a p-type impurity into a semi-insulating embedded layer, and to provide a method of manufacturing the element.
SOLUTION: In the duried semiconductor optical element, a laminate composed at least of a first conductive clad layer 3, an active layer 4 or an active region composed of a light-absorbing layer, and a second conductive clad layer 6 is worked into a mesa stripe-like shape on a semiconductor substrate 1, and both sides of the laminate are filled up with semi-insulating semiconductor crystal layers 9 and 10. The crystal layers 9 and 10 are formed, in the order of the layers 9 containing a semi-insulating impurity, which accelerates the diffusion of a second conductive (p-type) impurity and the layers 10 containing a semi-insulating impurity which suppresses the diffusion of the second conductive impurity.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：提供一种具有能够控制p型杂质扩散到半绝缘嵌入层中的结构的半导体光学元件，并提供一种制造该元件的方法。解决方案：在硬质半导体光学元件中，至少由第一导电覆层3，有源层4或由光吸收层构成的有源区和第二导电覆层6构成的层叠体被加工成台面在半导体基板1上形成条状，层叠体的两面被半绝缘性半导体晶体层9,10填充。晶体层9,10以包含半导体衬底1的层9的顺序形成，绝缘杂质，其加速第二导电（p型）杂质的扩散和含有半绝缘杂质的层10，其抑制第二导电杂质的扩散。

122. 发明专利

JP2003023210A Method for manufacturing semiconductor element 审中-公开
标题翻译：制造半导体元件的方法
公开(公告)号：JP2003023210A
公开(公告)日：2003-01-24
申请号：JP2001206996
申请日：2001-07-06
申请人： Furukawa Electric Co Ltd:The , 古河電気工業株式会社
发明人： TSUKIJI NAOKI , IRINO SATOSHI
IPC分类号： H01L21/027 , G03F7/20 , H01S5/02 , H01S5/12 , H01S5/125 , H01S5/227
CPC分类号： G03F7/7045 , H01S5/0201 , H01S5/1203 , H01S5/2275
摘要： PROBLEM TO BE SOLVED: To enhance a production efficiency of a semiconductor laser element including a constitution of a partly formed diffraction grating 13 or the like. SOLUTION: A method for manufacturing the semiconductor element comprises a step of batch forming a semiconductor laser element having the diffraction grating 13, partly provided at a laser beam emitting end face side or a reflecting end face side on a semiconductor substrate by using a semiconductor processing technique. The method further comprises a first exposure step of electron beam exposing or ion beam exposing for drawing only a diffraction grating region E1 provided with the grating 13 corresponding to a pattern of the grating 13, and a second exposure step of optically exposing or X-ray exposing a region except the region E1 with the region E1 masked.
摘要翻译：要解决的问题：提高包括部分形成的衍射光栅13等的构造的半导体激光元件的生产效率。解决方案：一种用于制造半导体元件的方法包括以下步骤：通过使用半导体处理在半导体衬底上的激光束发射端面侧或反射端面侧部分地设置具有衍射光栅13的半导体激光元件技术。该方法还包括：电子束曝光或离子束曝光的第一曝光步骤，用于仅绘制对应于光栅13图案的光栅13的衍射光栅区域E1;以及光学曝光或X射线的第二曝光步骤使区域E1以外的区域曝光，区域E1被掩蔽。

123. 发明专利

JPS6180889A Making of laser diode 失效
标题翻译：激光二极管的制作
公开(公告)号：JPS6180889A
公开(公告)日：1986-04-24
申请号：JP20856685
申请日：1985-09-20
申请人： Siemens Ag
发明人： YOTSUHIEN HAINEN
IPC分类号： H01S5/00 , H01S5/042 , H01S5/20 , H01S5/227
CPC分类号： H01S5/20 , H01S5/2059 , H01S5/227 , H01S5/2275

124. 发明专利

JPS6132590A Quantum well semiconductor laser and manufacture thereof 失效
标题翻译：量子半导体激光器及其制造
公开(公告)号：JPS6132590A
公开(公告)日：1986-02-15
申请号：JP15442584
申请日：1984-07-25
申请人： Nippon Telegr & Teleph Corp
发明人： KAWAMURA YUICHI , ASAHI HAJIME
IPC分类号： H01S5/00 , H01S5/20 , H01S5/227 , H01S5/343
CPC分类号： B82Y20/00 , H01S5/2095 , H01S5/227 , H01S5/2275 , H01S5/34306 , H01S5/34313
摘要： PURPOSE:To obtain the titled semiconductor laser having a low threshold, a stable transverse mode and high performance and a waveband of 1.3-1.6mum by replacing the greater part of an InP buried layer formed by thermally deforming an InP layer with a polyimide resin. CONSTITUTION:An n type InP clad layer 22, an n type In0.53Ga0.47-xAlxAs clad layer 23, an n type In0.53Ga0.47-zAlzAs barrier layer 24, active layers in which In0.53Ga0.47-yAlyAs quantum well layers 25 and In0.53Ga0.47-zAlzAs barrier layers 26 are shaped alternately, a p type In0.53Ga0.47-zAlzAs barrier layer 27, a p type In0.53Ga0.47-uAluAs clad layer 28, a p type InP clad layer 29 and a p type In0.53 Ga0.47-vAlvAs electrode layer 210 are grown onto a substrate 21 in succession, and etched to a mesa shape, and the layers 23-28 are further etched excessively. One parts of the layers 22 and 29 are thermally deformed to form an InP buried layer 211. Accordingly, the buried layer 211 has an energy gap larger than the active layers and a refractive index smaller than the active layers, thus constricting currents and confining beams, then stabilizing an oscillation and a transverse mode by low-threshold currents.
摘要翻译：目的：通过将InP层与热塑性聚酰亚胺树脂热变形而形成的InP埋层的较大部分置换，得到具有低阈值，稳定的横向模式和高性能，波长为1.3-1.6μm的标题半导体激光器。构成：n型InP覆盖层22，n型In0.53Ga0.47-xAlxAs覆盖层23，n型In0.53Ga0.47-zAlzAs阻挡层24，其中In 0.53 Ga 0.47-y Al y As量子阱层25和In0.53Ga0.47-zAlzAs阻挡层26交替成形，ap型In0.53Ga0.47-zAlzAs阻挡层27，ap型In0.53Ga0.47-uAluAs覆层28，ap型InP覆层29 并且将ap型In 0.53 Ga 0.47-v AlAs电极层210连续生长到基板21上，并蚀刻成台面形状，并且进一步蚀刻层23-28。层22和29的一部分被热变形以形成InP掩埋层211.因此，掩埋层211具有比有源层大的能隙和比有源层小的折射率，因此约束电流和约束光束，然后通过低阈值电流稳定振荡和横向模式。

125. 发明专利

JPS6114197A Mass transportation for semiconductor device manufacture 失效
标题翻译：半导体器件制造的大规模运输
公开(公告)号：JPS6114197A
公开(公告)日：1986-01-22
申请号：JP13581285
申请日：1985-06-21
申请人： Standard Telephones Cables Ltd
发明人： PIITAA DEBITSUDO GURIIN , DANIERU SEJISUMUNDO OTSUTOO RE
IPC分类号： C30B23/06 , C23C16/448 , C30B23/02 , C30B29/40 , H01L21/203 , H01L21/205 , H01S5/20 , H01S5/227
CPC分类号： C23C16/4488 , H01L21/02392 , H01L21/02461 , H01L21/02543 , H01L21/02546 , H01S5/2095 , H01S5/227 , H01S5/2275 , Y10S148/065 , Y10S148/119
摘要： A mass transport process for use in the manufacture of semiconductor devices, particularly but not exclusively low threshold semiconductor lasers in the InP/InGaAsP system, involves the arrangement of a cover wafer (18) of the material to be grown adjacent to a semiconductor wafer (15) on which the material is to be grown, their disposition together with a crystalline alkali halide (20) in a crucible (16), and heating the crucible, which is almost but not completely sealed, in a hydrogen stream. For the manufacture of InP/InGaAsP lasers and the growth of InP, the alkali halide may comprise KI, RbI or CsI and a controlled amount of In metal (21) may be optionally contained in the crucible (16) to control the balance between growth of InP for defining the laser active region and erosion of InP from other areas of the wafer. Growth is achieved at temperatures comparable with liquid phase epitaxy processing temperatures.

126. 发明专利

JPS60194590A Semiconductor laser element 失效
标题翻译：半导体激光元件
公开(公告)号：JPS60194590A
公开(公告)日：1985-10-03
申请号：JP4903384
申请日：1984-03-16
申请人： Hitachi Ltd
发明人： SAWAI MASAAKI
IPC分类号： H01S5/00 , H01S5/02 , H01S5/227
CPC分类号： H01S5/32 , H01L33/38 , H01S5/0202 , H01S5/227 , H01S5/2275 , H01S5/2277
摘要： PURPOSE:To obtain the titled element of high withstand voltage, high reliability, and high manufacturing yield by a method wherein the probability of deposition of foreign matters is reduced by shortening the length of a P-N junction exposed to the peripheral surface of the element, and the generation of short-circuit is prevented by positioning the rim of an electrode inside that of an insulation film. CONSTITUTION:A mesa part 18 is formed by removing the part of a buried layer distant from an active layer, i.e. the part between an active layer 3 and an active layer 3 by the photolithography technique. Next, an insulation film 10 made of SiO2 or the like is partly formed on the main surface of a wafer 15, and the P-N junction end posed to the side surface is covered with this insulation film 10. Then, outer force is applied to one end of the wafer 15 by means of a diamond tool or the like, and cleavage is carried out after scratching for cleavage at fixed intervals along the cleavage plane of the crystal; accordingly, segments on strips are formed. This segment gets scratches in a scribing area at fixed intervals in the direction orthogonal to cleavage lines by means of a diamond tool or the like, and cut along the scribes by cracking, resulting in the formation of many laser chips 19.
摘要翻译：目的：通过缩短暴露于元件周边表面的PN结的长度，减少异物沉积的可能性，从而获得高耐压，高可靠性和高制造成品率的标题元素，以及通过将电极的边缘定位在绝缘膜的内部来防止短路的产生。构成：通过通过光刻技术去除远离有源层的掩埋层的一部分，即有源层3和有源层3之间的部分，形成台面部分18。接下来，在晶片15的主表面上部分地形成由SiO 2等制成的绝缘膜10，并且将由该绝缘膜10覆盖的侧面的PN结端覆盖。然后，将外力施加到一个通过金刚石工具等将晶片15的端部切割，并且在划伤之后进行切割以沿着晶体的解理平面以固定的间隔进行切割; 因此，形成条带上的段。该段通过金刚石工具等在与切割线正交的方向上以固定间隔在划线区域划伤，并通过裂纹沿着划线切割，导致形成许多激光芯片19。

127. 发明专利

JPS60193393A Optical integrated circuit device 失效
标题翻译：光学集成电路设备
公开(公告)号：JPS60193393A
公开(公告)日：1985-10-01
申请号：JP4961884
申请日：1984-03-15
申请人： Matsushita Electric Ind Co Ltd
发明人： KIMURA SOUICHI
IPC分类号： H01L27/15 , H01S5/00 , H01S5/026 , H01S5/227
CPC分类号： H01S5/026 , H01S5/0261 , H01S5/227 , H01S5/2275
摘要： PURPOSE:To enable to perform a modulating operation in a highly accurate manner by a method wherein a layer, with which the light emitted by an active layer will be diffused, is provided between a substrate and the band gap layer of the size same as or smaller than that of the band gap of a laser part, and the laser part and a transistor part are separated to each other. CONSTITUTION:An n type InGaAsP layer 30 is formed between the n type InGa AsP substrate 1 of an optical integrated circuit device and an n type InP buffer layer 2, and resin 16 is buried until it reaches a layer 30. Using said layer 30, a prescribed band gas is formed in the direction as shown by an arrow 21 in the diagram, the light emitted from an active layer 3 is absorbed by the layer 30, and the light is prevented from reaching a transistor TR part. Also, the light making progress in horizontal direction is absorbed by the resin 16 shown by the arrow 22 in the diagram, and the light is prevented from reaching the TR part. Then, the laser part and the TR part are completely separated, and the adverse effect which will be given to the TR part by the light emitted from the laser part is eliminated, thereby enabling to perform a modulating operation in a highly accurate manner.
摘要翻译：目的：为了能够以高度精确的方式执行调制操作，其中将由活性层发射的光扩散的层被提供在基底和尺寸相同或相等的带隙层之间的方法，小于激光器部分的带隙，并且激光部分和晶体管部分彼此分离。构成：在光集成电路器件的n型InGaAsP衬底1和n型InP缓冲层2之间形成n型InGaAsP层30，并埋入树脂16直到其到达层30.使用所述层30，在图中箭头21所示的方向上形成规定的带状气体，从有源层3发射的光被层30吸收，防止光到达晶体管TR部。此外，在图中的箭头22所示的树脂16吸收水平方向的光照射，并防止光到达TR部。然后，激光部分和TR部分完全分离，并且消除了由激光部分发出的光对TR部分产生的不良影响，从而能够以高精度的方式进行调制操作。

128. 发明专利

JPS5943839B2 JPS5943839B2 - 失效
公开(公告)号：JPS5943839B2
公开(公告)日：1984-10-24
申请号：JP14213281
申请日：1981-09-09
申请人： Hitachi Ltd
发明人： KAJIMURA TAKASHI , SAITO KAZUTOSHI , SHIGE NORYUKI , NAKAMURA MICHIHARU , UMEDA JUNICHI , KOBAYASHI MASAYOSHI
IPC分类号： H01S5/00 , H01S5/227
CPC分类号： H01S5/227 , H01S5/2275

129. 发明专利

JPS59178785A Buried-in type photosemiconductor device 失效
标题翻译： BURIED-IN型光电导体器件
公开(公告)号：JPS59178785A
公开(公告)日：1984-10-11
申请号：JP5234983
申请日：1983-03-30
申请人： Hitachi Ltd
发明人： OOBE ISAO , TODOROKI SATORU
IPC分类号： H01S5/00 , H01S5/227
CPC分类号： H01S5/227 , H01S5/2275
摘要： PURPOSE:To contrive to prolongate the lifetime and increase the reliability by restraining the current flowing through a buried interface and thus inhibiting the deterioration of said interface by restricting the diffused layer for current restriction in the first epitaxial grown layer. CONSTITUTION:An N type InP optical guide layer 2, an N type of P type InGaAsP active layer 3, a p type InP optical guide layer 4, and a P type InGaAsP cap layer 5 are successively laminated on an N type InP substrate 1 by liquid phase epitaxial growing method. Next, a stripe mask 6 of a fixed width is formed on the layer 5 and then etched down to the layer 2, and the second liquid phase epitaxial growth is performed at the removed part, thus forming a P type InP buried layer 7, an N type buried InP layer 8, and an N type InGaAsP cap layer 9. Then, a P diffused region 11 of a width narrower than that of the layer 5 and a depth reaching a part of the layer 4 is frmed by diffusing Zn by means of a mask 10 of a narrow width. Besides, the region 11 is restricted in the first grown layer, restraining the current flowing through the buried interface, and preventing the deterioration of said interface.
摘要翻译：目的：通过限制流过掩埋界面的电流来延长使用寿命并提高可靠性，从而通过在第一外延生长层中限制用于电流限制的扩散层来抑制所述界面的劣化。构成：N型InP光导层2，N型P型InGaAsP有源层3，ap型InP光导层4和P型InGaAsP覆盖层5依次层叠在N型InP基板1上，液体相外延生长法。接下来，在层5上形成固定宽度的条纹掩模6，然后蚀刻到层2，并且在去除部分进行第二液相外延生长，从而形成P型InP掩埋层7， N型埋入InP层8和N型InGaAsP覆盖层9.然后，宽度比层5的宽度窄的P +扩散区域11和到达层4的一部分的深度被扩散 Zn通过窄宽度的掩模10。此外，区域11被限制在第一生长层中，抑制流过掩埋界面的电流，并且防止所述界面的劣化。

130. 发明专利

JPS59145590A Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：JPS59145590A
公开(公告)日：1984-08-21
申请号：JP1883083
申请日：1983-02-09
申请人： Hitachi Ltd
发明人： OOTOSHI SOU , KOUNO TOSHIHIRO , KAJIWARA TAKASHI , KAYANE NAOKI , NAKAMURA MICHIHARU
IPC分类号： H01S5/00 , H01S5/20 , H01S5/227 , H01S5/32
CPC分类号： H01S5/227 , H01S5/2081 , H01S5/2275 , H01S5/3213
摘要： PURPOSE:To obtain a device, temperature characteristics thereof are improved, an output therefrom is increased and a lateral mode thereof at a high output is stabilized, by making the refractive indices of a P type clad and an N type clad asymmetric, bringing the conduction type of a light guide layer to an N type while bringing an active layer to a quantum well type and making an end surface transparent. CONSTITUTION:A clad layer 2, a light guide layer 3, an active layer 4, a clad layer 5 and a cap layer 6 are grown on a substrate 1 in succession through a liquid phase epitaxial growth method. A mesa stripe is formed through etching. In this case, the depth of a mesa is made reach to the substrate 1, and the width of the light guide layer is made larger than that of the active layer in the direction rectangular to the stripe. Only Ga0.55Al0.45As in the P clad layer 5 is etched by 1-3mum from both sides. The active layer exposed to the side surface of the stripe is removed to form a predetermined section. The mesa stripe is buried with a P-Ga0.55Al0.45As layer 7 and an N-Ga0.55Al0.45As layer 8 through a liquid phase epitaxial growth method and Zn is diffused 9 selectively, and ohmic electrodes 10, 11 are formed. A visible semiconductor laser of a fundamental lateral mode up to an oscillation wavelength of 0.78mum and an optical output of 30-50mW and a maximum optical output of 1W was obtained as a device, an end surface thereof is made transparent in our experiment.
摘要翻译：目的：为了获得一种器件，提高其温度特性，通过使P型包层和N型包层的折射率不对称，使其输出增加，高输出端的横向模式稳定，使导通类型的导光层形成为N型，同时使活性层进入量子阱型并使端表面透明。构成：通过液相外延生长法，在基板1上生长包覆层2，导光层3，有源层4，覆盖层5和覆盖层6。通过蚀刻形成台面条纹。在这种情况下，使得台面的深度到达基板1，并且使光导层的宽度大于活性层在与条状矩形的方向上的宽度。在P包覆层5中，只有Ga0.55Al0.45As从两侧蚀刻1-3μm。暴露于条带的侧表面的有源层被去除以形成预定部分。通过液相外延生长方法，通过液相外延生长法以P-Ga0.55Al0.45As层7和N-Ga0.55Al0.45As层8掩埋台面条纹，并且Zn被选择性地扩散9，形成欧姆电极10,11。获得基本横向模式的直到振荡波长为0.78μm，光输出为30-50mW，最大光输出为1W的可见半导体激光器作为器件，其端面在本实验中是透明的。

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