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1. 发明专利

JP2006210951A Semiconductor laser module 审中-公开
标题翻译：半导体激光模块
公开(公告)号：JP2006210951A
公开(公告)日：2006-08-10
申请号：JP2006119067
申请日：2006-04-24
申请人： Furukawa Electric Co Ltd:The , 古河電気工業株式会社
发明人： YOSHIDA JIYUNJI , TSUKIJI NAOKI , IKETANI AKIRA , KIMURA NAOKI , NIEKAWA JUN , KIMURA TOSHIO , AIKIYO TAKESHI
IPC分类号： H01S5/343
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor laser module integrating a semiconductor laser device that operates with high power, which is capable of reducing power consumption at the time of drive and the failure rate to half that of the conventional module.
SOLUTION: This semiconductor laser module has an embedded semiconductor laser device A, where a semiconductor laminated structure including an active layer composed of strained multiple quantum well structure is formed on a substrate 1, low reflecting film S
1 with the reflection factor of no more than 3% is formed on one end surface, and high reflecting film S
2 with the reflection factor of no less than 90% is formed on the other end surface. For the device A, the design parameters are the length of a resonator and the reflection factor of the low reflecting film, and the length L of the resonator is longer than 1,000 μm and no more than 1,800 μm. In addition, this semiconductor laser module has a cooling device 14 that mounts the foregoing laser device, package 13 that encloses both inside, and lens 15a arranged on one end surface of the semiconductor laser device.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种半导体激光器模块，其集成了以高功率运行的半导体激光器装置，其能够将驱动时的功耗降低到故障率的一半，同时，解决方案：该半导体激光器模块具有嵌入式半导体激光器件A，其中在衬底1上形成包括由应变多量子阱结构构成的有源层的半导体层叠结构，低反射膜S < 在一个端面上形成反射率不超过3％的SB>反射率不小于90％的高反射膜S 2 在另一端面上形成。对于器件A，设计参数是谐振器的长度和低反射膜的反射系数，并且谐振器的长度L大于1,000μm且不大于1,800μm。此外，该半导体激光器模块具有安装上述激光装置的冷却装置14，两者都包围的封装13和布置在半导体激光装置的一个端面上的透镜15a。版权所有（C）2006，JPO＆NCIPI

2. 发明专利

JP2004289025A Semiconductor laser module and electronic cooling device for semiconductor laser module 审中-公开
公开(公告)号：JP2004289025A
公开(公告)日：2004-10-14
申请号：JP2003081615
申请日：2003-03-24
申请人： Furukawa Electric Co Ltd:The , 古河電気工業株式会社
发明人： TSUKIJI NAOKI , OKI YASUSHI , KANAMARU SADAYOSHI
IPC分类号： H01L23/34 , H01L23/38 , H01S5/022 , H01S5/042
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor laser module wherein it is made high output power, low electric power consumption, and highly reliable. SOLUTION: A semiconductor laser element 4 and a Peltier element 5 are electrically connected with a constant voltage power supply circuit 6. When the package temperature of the semiconductor laser module including a semiconductor laser element 4 lies in the vicinity of the maximum temperature in a temperature range used by the laser module, the temperature of the semiconductor laser element concerning a driving current of the semiconductor laser element is monotonically decreased following an increase of the driving current. The driving current IId of the semiconductor laser element 4 is controlled by an automatic semiconductor laser output control element 7. The voltage of the constant voltage power supply circuit is set to 5V. COPYRIGHT: (C)2005,JPO&NCIPI

3. 发明专利

JP2003324246A Semiconductor laser device, semiconductor laser module, optical fiber amplifier, and method for selecting semiconductor laser device 审中-公开
标题翻译：半导体激光器件，半导体激光器模块，光纤放大器和选择半导体激光器件的方法
公开(公告)号：JP2003324246A
公开(公告)日：2003-11-14
申请号：JP2003049927
申请日：2003-02-26
申请人： Furukawa Electric Co Ltd:The , 古河電気工業株式会社
发明人： SHIMIZU YUTAKA , YOSHIDA JIYUNJI , TSUKIJI NAOKI , OKI YASUSHI
IPC分类号： G02B6/42 , H01S3/10 , H01S3/30 , H01S5/125
摘要： PROBLEM TO BE SOLVED: To obtain a semiconductor laser device prevented from generating induced Brillouin scattering. SOLUTION: An n-InP buffer layer 2, a GRIN-SCH-MQW active layer 3 and a p-InP spacer layer 4 are laminated on the surface of an n-InP substrate 1. A p-InP blocking layer 8 and an n-InP blocking layer 9 are laminated adjacently to the upper region of the buffer layer 2, the active layer 3 and the spacer layer 4. A p-InP clad layer 6, a p-GaInAsP contact layer 7 and a p-side electrode 10 are laminated on the spacer layer 4 and the blocking layer 9, and an n-side electrode 11 is arranged on the rear surface of the substrate 1. A diffraction grating 13 is arranged in the spacer layer 4 to select light having ten or more, preferably eighteen or more, oscillation vertical modes each having a differential value of 10 dB or less relative to the maximum light intensity of the oscillation vertical mode. COPYRIGHT: (C)2004,JPO
摘要翻译：解决的问题：为了获得防止产生感应布里渊散射的半导体激光器件。解决方案：n-InP缓冲层2，GRIN-SCH-MQW有源层3和p-InP间隔层4层压在n-InP衬底1的表面上.P-InP阻挡层8 并且n-InP阻挡层9与缓冲层2，有源层3和间隔层4的上部区域相邻层叠.P-InP包覆层6，p-GaInAsP接触层7和p- 侧面电极10层压在隔离层4和阻挡层9上，并且n侧电极11设置在基板1的背面上。衍射光栅13布置在间隔层4中以选择具有十个或更多，优选十八个或更多个振荡垂直模式，其相对于振荡垂直模式的最大光强度具有10dB或更小的差分值。版权所有（C）2004，JPO

4. 发明专利

JP2003324237A Semiconductor laser device and semiconductor laser module and optical fiber amplifier using the device and module 审中-公开
标题翻译：半导体激光器件和半导体激光器模块和光纤放大器使用器件和模块
公开(公告)号：JP2003324237A
公开(公告)日：2003-11-14
申请号：JP2002127276
申请日：2002-04-26
申请人： Furukawa Electric Co Ltd:The , 古河電気工業株式会社
发明人： OKI YASUSHI , TSUKIJI NAOKI , YOSHIDA JIYUNJI
IPC分类号： G02F1/35 , H01S3/094 , H01S3/30 , H01S5/065 , H01S5/125
摘要： PROBLEM TO BE SOLVED: To obtain a semiconductor laser device and a semiconductor laser module suited to a light source for an optical fiber amplifier capable of stably obtaining a high gain, and the optical fiber amplifier using the device and the module. SOLUTION: In the semiconductor laser device of ridge structure, a diffraction grating is formed in the vicinity of an active layer formed between a 1st reflection film formed on a laser light exiting end face and a 2nd reflection film formed on a laser light reflecting end face. Further in the laser device laser light including two or more oscillation vertical modes 31-33 in the half band width Δλh of an oscillation wavelength spectral 30 is outputted by setting up the combination of oscillation parameters including the length of a resonator formed by the active layer and the wavelength selection characteristic of the diffraction grating. When a material of an Al mixed crystal group is contained in the active layer, a high output can be generated. COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：为了获得适合于能够稳定地获得高增益的光纤放大器的光源的半导体激光器件和半导体激光器模块，以及使用该器件和模块的光纤放大器。解决方案：在脊结构的半导体激光器件中，在形成在激光出射端面上的第一反射膜和形成在激光上的第二反射膜之间形成的有源层附近形成衍射光栅反映端面。此外，在激光装置中，通过设置包括由有源层形成的谐振器的长度的振荡参数的组合来输出包括振荡波长频谱30的半波段宽度Δλh中的两个或更多个振荡垂直模式31-33的激光，和衍射光栅的波长选择特性。当Al混合晶体组的材料被包含在有源层中时，可以产生高的输出。版权所有（C）2004，JPO

5. 发明专利

JP2003273423A Semiconductor laser device, semiconductor laser module, and optical fiber amplifier 有权
标题翻译：半导体激光器件，半导体激光器模块和光纤放大器
公开(公告)号：JP2003273423A
公开(公告)日：2003-09-26
申请号：JP2002077352
申请日：2002-03-19
申请人： Furukawa Electric Co Ltd:The , 古河電気工業株式会社
发明人： YOSHIDA JIYUNJI , TSUKIJI NAOKI , OKI YASUSHI
IPC分类号： G02F1/35 , H01S3/06 , H01S3/094 , H01S3/10 , H01S5/022 , H01S5/12 , H01S5/227 , H01S5/323
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor laser device which suppresses the occur rence of induced Brillouin scattering at an high power output. SOLUTION: By providing an absorption layer 12 having an energy gap close to energy indicated by an oscillation frequency, near a GRIN-SCH-MQW active layer 3, the life of a photon produced in the GRIN-SCH-MQW active layer 3 is shortened and a spectrum width per one mode is widened, resulting in an increase in threshold value at which induced Brillouin scattering occurs. Compared with a conventional semiconductor laser device, a spectrum peak can be lowered so as not to exceed the threshold value at which induced Brillouin scattering occurs even if the same optical intensity is obtained, thereby suppressing the occurrence of induced Brillouin scattering. COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：提供一种抑制在高功率输出下感应的布里渊散射发生的半导体激光器件。解决方案：通过在GRIN-SCH-MQW有源层3附近提供具有接近由振荡频率指示的能量的能隙的吸收层12，在GRIN-SCH-MQW有源层中产生的光子的寿命 3被缩短并且每一个模式的光谱宽度被加宽，导致发生感应布里渊散射的阈值增加。与传统的半导体激光器件相比，可以降低频谱峰值，以便即使获得相同的光强度也不会超过发生感应布里渊散射的阈值，从而抑制感应布里渊散射的发生。版权所有（C）2003，JPO

6. 发明专利

JP2012019158A Surface emitting laer element and surface emitting laer array element 审中-公开
标题翻译：表面发射元件和表面发射元件阵列元件
公开(公告)号：JP2012019158A
公开(公告)日：2012-01-26
申请号：JP2010157152
申请日：2010-07-09
申请人： Furukawa Electric Co Ltd:The , 古河電気工業株式会社
发明人： TAKAKI KEISHI , FUNAHASHI MASAKI , KAWAKITA YASUMASA , TSUKIJI NAOKI
IPC分类号： H01S5/183 , G02B6/122
摘要： PROBLEM TO BE SOLVED: To provide a surface emitting laser element and a surface emitting laser array element using a heating mechanism capable of controlling the laser oscillation wavelength of the surface emitting laser element with high accuracy and low power consumption.SOLUTION: The surface emitting laser element comprises an optical resonator consisting of two multilayer reflectors, an active layer arranged in the optical resonator, a high resistance heating part provided in the vicinity of the active layer, and a low resistance part having an electrical resistance lower than that in the high resistance heating part and connected with the high resistance heating part in order to transmit a current thereto. A heating mechanism is provided in order to adjust the laser oscillation wavelength of the surface emitting laser element.
摘要翻译：要解决的问题：提供一种使用能够以高精度和低功耗控制表面发射激光器元件的激光振荡波长的加热机构来提供表面发射激光器元件和表面发射激光器阵列元件。解决方案：表面发射激光器元件包括由两个多层反射器组成的光谐振器，布置在光谐振器中的有源层，设置在有源层附近的高电阻加热部分，以及具有电阻比高电阻加热部分低，并与高电阻加热部分连接，以便传输电流。提供加热机构以调节表面发射激光元件的激光振荡波长。版权所有（C）2012，JPO＆INPIT

7. 发明专利

JP2007251067A Semiconductor laser module 有权
标题翻译：半导体激光模块
公开(公告)号：JP2007251067A
公开(公告)日：2007-09-27
申请号：JP2006075694
申请日：2006-03-17
申请人： Furukawa Electric Co Ltd:The , 古河電気工業株式会社
发明人： SEKI MASAYOSHI , TANITSU RYOSUKE , TSUKIJI NAOKI
IPC分类号： H01S5/022
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor laser module which is further improved in bonding reliability by carrying out bonding without producing low melting point layer, in the case of bonding by laser welding.
SOLUTION: The semiconductor laser module is constituted such that: a sealing member stores a base, where a semiconductor laser element consisting of a first metal material is laid, or the semiconductor laser element; a lens holder consisting of a second metal material holds a lens to which the light emitted from the semiconductor laser element is led; and the sealing member and the lens holder are connected via a connection member consisting of a third metal material. The first metal material is a Fe-nickel-Co system alloy, the second metal material where Pb element, Te element, and S element are added, and also Ni element exists in inescapable impurities concentration is a ferrite system stainless alloy excellent in a free-machining property, and the third metal material is a ferrite system stainless alloy where Ni element, Pb element, Te element, and S element exist in inevitable impurities concentration.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：解决的问题：提供一种通过在不生产低熔点层的情况下进行接合而进一步提高接合可靠性的半导体激光器模块，在通过激光焊接的情况下。解决方案：半导体激光器模块构成为：密封部件存储由第一金属材料构成的半导体激光元件或半导体激光元件的基底，由第二金属材料构成的透镜保持器保持从半导体激光元件发射的光被引导到的透镜; 并且密封构件和透镜保持器通过由第三金属材料构成的连接构件连接。第一种金属材料是Fe-Ni-Co系合金，添加了Pb元素，Te元素和S元素的第二种金属材料以及不可避免的杂质浓度存在的Ni元素是一种优良的自由度的铁素体系不锈钢合金第三种金属材料是铁素体系不锈钢合金，Ni元素，Pb元素，Te元素和S元素不可避免地存在杂质浓度。版权所有（C）2007，JPO＆INPIT

8. 发明专利

JP2006216695A Semiconductor laser module 审中-公开
标题翻译：半导体激光模块
公开(公告)号：JP2006216695A
公开(公告)日：2006-08-17
申请号：JP2005026734
申请日：2005-02-02
申请人： Furukawa Electric Co Ltd:The , 古河電気工業株式会社
发明人： MURANUSHI KENGO , KIMURA TOSHIO , KOSEKI TAKASHI , KUROBE TATSUO , MUKOHARA TOMOKAZU , KIMOTO TATSUYA , TSUKIJI NAOKI
IPC分类号： H01S5/022
摘要： PROBLEM TO BE SOLVED: To provide a small and inexpensive semiconductor laser module without need of a beam splitter for branching a laser beam emitted from a front end face of a semiconductor laser element.
SOLUTION: The module is provided with a single vertical mode semiconductor laser element 1 emitting the laser beam which is linearly polarized from the front end face, an optical isolator 2 which has an incidence polarizer 2a1 to which the laser beam is made incident and makes the laser beam pass only to one direction, an optical detector 3 receiving a part of the laser beam and outputting an electric signal corresponding to the characteristic of the laser beam, and a base 4 where the optical detector 3 is placed on a main face 4a. The optical isolator 2 is aligned and fixed in a state where an incidence face of the incidence polarizer 2a1 is inclined to an incidence optical axis of the laser beam by a prescribed angle and in a state where a polarization direction of the incidence polarizer 2a1 permits passage of the laser beam in the maximum. The optical detector is fixed to the main face 4a of the base 4 so that it receives the laser beam reflected on an incidence face of the incidence polarizer 2a1.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种小型廉价的半导体激光器模块，而不需要用于将从半导体激光元件的前端面发射的激光束分支的分束器。解决方案：模块设置有发射从前端面线性偏振的激光束的单个垂直模式半导体激光元件1，具有入射偏振器2a1的光隔离器2，激光束入射到入射偏振器2a1 并且使激光束仅通过一个方向，光学检测器3接收激光束的一部分并输出与激光束的特性相对应的电信号;以及基座4，其中光学检测器3放置在主体上脸4a。光隔离器2在入射偏振片2a1的入射面以激光束的入射光轴倾斜预定角度并且入射偏振片2a1的偏振方向允许通过的状态下被对准和固定的激光束最大。光检测器固定在基座4的主面4a上，使其接收在入射偏振片2a1的入射面上反射的激光束。版权所有（C）2006，JPO＆NCIPI

9. 发明专利

JP2005191349A Semiconductor laser element 有权
标题翻译：半导体激光元件
公开(公告)号：JP2005191349A
公开(公告)日：2005-07-14
申请号：JP2003432043
申请日：2003-12-26
申请人： Furukawa Electric Co Ltd:The , 古河電気工業株式会社
发明人： OKI YASUSHI , YOSHIDA JIYUNJI , TSUKIJI NAOKI
IPC分类号： H01S5/042 , H01S5/12 , H01S5/343
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor laser element with a high output and an excellent temperature characteristic by suppressing a carrier overflow from an active layer.
SOLUTION: The semiconductor laser element includes a quantum well active layer (4), optical confinement layers (3, 5) in contact with at least one side of the quantum well active layer, and a set of clad layers (2, 7) provided in a way of sandwiching the quantum well active layer and the optical confinement layers on a semiconductor substrate. A resonator formed in parallel with the semiconductor substrate is formed with wide gap layers (6a, 6b) made of materials with greater band gaps than those of a set of the clad layers, and the wide gap layers have layers doped to be the same conduction types as that of the clad layer closer to the wide gap layers in a set of the clad layers.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：通过抑制载体从有源层溢出来提供具有高输出和优异的温度特性的半导体激光元件。解决方案：半导体激光元件包括量子阱有源层（4），与量子阱有源层的至少一侧接触的光限制层（3,5）和一组包层（2， 7）以将量子阱有源层和光限制层夹在半导体衬底上的方式提供。与半导体衬底平行形成的谐振器形成有宽间隙层（6a，6b），该间隙层由具有比一组包层的带隙大的带隙的材料制成，并且宽间隙层具有掺杂为相同导电的层类似于在一组包层中更接近宽间隙层的包覆层的类型。版权所有（C）2005，JPO＆NCIPI

10. 发明专利

JP2005072402A Semiconductor laser device, semiconductor laser module using the same and optical fiber amplifying device 审中-公开
标题翻译：半导体激光器件，使用其的半导体激光器模块和光纤放大器件
公开(公告)号：JP2005072402A
公开(公告)日：2005-03-17
申请号：JP2003302288
申请日：2003-08-27
申请人： Furukawa Electric Co Ltd:The , 古河電気工業株式会社
发明人： YOSHIDA JIYUNJI , TSUKIJI NAOKI , OKI YASUSHI
IPC分类号： H01S5/343 , H01S5/022
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor laser device which enables a high output operation with an excellent reliability.
SOLUTION: In the semiconductor laser device having a p-type clad layer, an n-type clad layer and an active layer, the n-type clad layer comprises two or more layers which have a different composition containing InP and GaInAsP, in particular preferably, a superlattice structure. Also, a refractive index of the n-type clad layer is greater than that of the p-type clad layer.
COPYRIGHT: (C)2005,JPO&NCIPI

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