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    • 91. 发明专利
    • Pattern-forming method
    • 图案形成方法
    • JP2005292581A
    • 2005-10-20
    • JP2004109131
    • 2004-04-01
    • Fuji Photo Film Co Ltd富士写真フイルム株式会社
    • SERIZAWA SHINICHIROISHIKAWA HIROMISHIMOYAMA YUJI
    • G03F7/027G03F7/09G03F7/20G03F7/207H01L21/027
    • PROBLEM TO BE SOLVED: To provide a pattern-forming method with which a defect-free permanent pattern, such as a wiring pattern can be efficiently formed with high definition by suppressing distortion of an image provided on a pattern forming material and setting the total light transmittance and the haze value of a support in the pattern forming material within a prescribed range. SOLUTION: The pattern forming method includes at least exposing a photosensitive layer in a pattern forming material having the photosensitive layer on a support, wherein when the support is irradiated with light of 405 nm, the total light transmittance of the support is ≥80%; and when the support is irradiated with light of 405 nm, a haze value of the support is ≤10%, by modulating light from a light irradiation means by a light modulation means having (n) imaging portions which receive light from the light irradiation means and output light, and by passing the modulated light through a microlens array formed by arraying microlenses, having aspherical surfaces capable of making corrections for aberration due to distortion in the output surfaces in the imaging portions. COPYRIGHT: (C)2006,JPO&NCIPI
    • 解决的问题:提供一种图案形成方法,通过抑制图案形成材料上设置的图像的变形和设定,可以以高清晰度有效地形成诸如布线图案的无缺陷永久性图案 图案形成材料中的载体的总透光率和雾度值在规定范围内。 解决方案:图案形成方法至少包括将具有感光层的图案形成材料中的感光层暴露在支撑体上,其中当支撑体用405nm的光照射时,支撑体的总透光率≥ 80%; 并且当支持体用405nm的光照射时,通过调制来自光照射装置的光的光调制装置,支撑体的雾度值为≤10%,该调制装置具有(n)个成像部分,该成像部分接收来自光照射装置 并输出光,并且通过使经调制的光通过由微透镜排列而形成的微透镜阵列,具有能够对由于成像部分的输出表面中的失真造成的像差进行校正的非球面。 版权所有(C)2006,JPO&NCIPI
    • 94. 发明专利
    • Exposure device and exposure method
    • 曝光装置和曝光方法
    • JP2005243686A
    • 2005-09-08
    • JP2004047890
    • 2004-02-24
    • Ebara Corp株式会社荏原製作所
    • SHIMIZU SHUNSUKEGOTO MASANORIHIYAMA HIROKUNINAKASUJI MAMORUNOMICHI SHINJI
    • G03F7/207H01L21/027
    • PROBLEM TO BE SOLVED: To provide an exposure device of liquid immersion type which can be applied also when a wafer is scanned.
      SOLUTION: Liquid immersion liquid is supplied to an exposure part passage 22 between a projection optical lens 12 and a wafer 18 on a stage 14, and the projection optical lens 12 exposes the wafer 18 through the liquid immersion liquid. The flow rate of the liquid immersion liquid is controlled so that the flow in the exposure part passage 22 will become a laminar state. A flow rate control means controls the flow rate of the liquid immersion liquid so that the value of a dimensionless number Re=U×D/ν may not exceed a specific critical value, when D is the distance of the projection optical lens 12 and the wafer 18 in the exposure part passage 22, U is the average flow velocity of the liquid immersion liquid in the exposure part passage 22, and ν is the coefficient of the kinematic viscosity of the liquid immersion liquid.
      COPYRIGHT: (C)2005,JPO&NCIPI
    • 要解决的问题:提供当扫描晶片时也可以应用的液浸型曝光装置。 解决方案:将浸液液体供应到台架14上的投影光学透镜12和晶片18之间的曝光部通道22,并且投影光学透镜12通过液浸液体暴露晶片18。 控制液浸液体的流量,使曝光部通路22的流动成为层状。 流量控制装置控制液浸液体的流量,使得当D是投影光学透镜12和投影光学透镜12的距离时,无量纲Re = U×D /ν的值不能超过特定的临界值 曝光部分通道22中的晶片18,U是曝光部分通道22中液浸液体的平均流速,ν是液浸液体的运动粘度的系数。 版权所有(C)2005,JPO&NCIPI
    • 95. 发明专利
    • Feedback method of semiconductor manufacturing step
    • 半导体制造步骤的反馈方法
    • JP2005235899A
    • 2005-09-02
    • JP2004041102
    • 2004-02-18
    • Matsushita Electric Ind Co Ltd松下電器産業株式会社
    • SETO TETSUO
    • G03F7/20G03F7/207H01L21/02H01L21/027
    • PROBLEM TO BE SOLVED: To provide a feedback method of a semiconductor manufacturing step that can improve productivity without setting conditions in advance using advancing wafers, in a situation that the microfabrication of a device dimension progresses, required dimensional accuracy and alignment accuracy become higher, and the number of processings in a lithography step increases as processes become complicated.
      SOLUTION: The feedback method is used to determine the processing condition of a lot to be processed according to in-step process quality control data of several lots that are processed in the lithography step of the manufacturing process of a semiconductor device. When the processing condition is determined, the in-step process quality control data are examined by a statistical examination method, the change of the condition is accurately grasped on the basis of the examination result, and the in-step process quality control data used for the determination of the processing condition are selected. Thus, a new regression coefficient is obtained, and feedback is conducted on the basis of the regression coefficient.
      COPYRIGHT: (C)2005,JPO&NCIPI
    • 要解决的问题:提供一种半导体制造步骤的反馈方法,其可以在不使用前进晶片预先设定条件的情况下提高生产率,在器件尺寸的微细加工进行的情况下,需要尺寸精度和对准精度成为 光刻步骤中的处理次数随着工艺变得复杂而增加。 解决方案:反馈方法用于根据在半导体器件的制造工艺的光刻步骤中处理的若干批次的步骤过程质量控制数据来确定要处理的批次的处理条件。 当确定处理条件时,通过统计检查方法检查步进过程质量控制数据,基于检查结果准确地掌握条件的改变,并且将用于 选择处理条件的确定。 因此,获得了新的回归系数,并根据回归系数进行反馈。 版权所有(C)2005,JPO&NCIPI
    • 96. 发明专利
    • Exposure apparatus and device manufacturing method
    • 曝光装置和装置制造方法
    • JP2005228875A
    • 2005-08-25
    • JP2004035129
    • 2004-02-12
    • Canon Incキヤノン株式会社
    • SUZUKI MASAYUKI
    • G03F7/207H01L21/027
    • PROBLEM TO BE SOLVED: To provide an EUV exposure apparatus wherein the performance deterioration of a projection optical system caused by a change in temperature of a mirror included in the projection optical system can be reduced. SOLUTION: The exposure apparatus comprises the projection optical system which includes a plurality of optical elements using a material wherein a temperature exists at which a coefficient of linear expansion becomes zero, and which projects the pattern of an original layout onto a substrate using the plurality of optical elements. The exposure apparatus also includes a controller for controlling a first optical element among the plurality of them to a first target temperature. Where the first target temperature is Tc1 and a first zero-cross temperature is Tz1 at which the coefficient of linear expansion of the material of the first optical element becomes zero, Tc1 should be no lower than (Tz1-2) nor higher than (Tz1+2). COPYRIGHT: (C)2005,JPO&NCIPI
    • 要解决的问题:提供一种EUV曝光装置,其中可以减少由包括在投影光学系统中的反射镜的温度变化引起的投影光学系统的性能劣化。 解决方案:曝光装置包括投影光学系统,其包括使用其中存在线性膨胀系数为零的温度的材料的多个光学元件,并且将原始布局的图案投影到基板上,使用 多个光学元件。 曝光装置还包括控制器,用于将多个第一光学元件中的第一光学元件控制到第一目标温度。 在第一目标温度为Tc1且第一零交叉温度为第一光学元件的材料的线膨胀系数为零的Tz1时,Tc1应不低于(Tz1-2)或不高于(Tz1 +2)。 版权所有(C)2005,JPO&NCIPI
    • 97. 发明专利
    • Face position detector, device and exposing method
    • 表面位置检测器,装置和曝光方法
    • JP2005201675A
    • 2005-07-28
    • JP2004005678
    • 2004-01-13
    • Nikon Corp株式会社ニコン
    • KAWAGUCHI TORU
    • G01B11/00G03F7/207H01L21/027
    • PROBLEM TO BE SOLVED: To provide a face position detector which can accurately detect a face position of a face to be inspected without affecting by installation errors of the device or the like. SOLUTION: A face position detector 2 to detect a face position of a face to be inspected S by irradiating the face to be inspected S with a detecting light from a slanting direction based on the light of the light source and receiving the detecting light reflected from the face to be inspected S, comprises a sending light system SL which sends a detecting light to the face to be inspected S to form a slit-shaped light irradiation area on each of a plurality of detecting points which are two-dimensionally arranged on the face to be inspected S, and a receiving light system RL which receive the detecting light reflected at each of the detecting points arranged on the face to be inspected S, wherein the detecting light is sent from direction which is almost orthogonal to the longitudinal direction of the slit-shaped light irradiation area formed on the detecting points. COPYRIGHT: (C)2005,JPO&NCIPI
    • 要解决的问题:提供一种可以精确地检测要检查的面部的脸部位置而不受设备的安装错误等的影响的面部位置检测器。 解决方案:一种面部位置检测器2,用于通过基于光源的光从倾斜方向用检测光照射被检查的面S来检测被检查面S的面部位置,并接收检测 从被检查面S反射的光包括发送光系统SL,其将检测光发送到被检查面S,以在二维的多个检测点中的每一个上形成狭缝状的光照射区域 布置在被检查面S上的接收光系统RL以及接收在被检查面S上的每个检测点反射的检测光的接收光系统RL,其中检测光从几乎正交于 形成在检测点上的狭缝状光照射区域的长度方向。 版权所有(C)2005,JPO&NCIPI
    • 99. 发明专利
    • Driving mechanism, fine moving stage, exposure system, and device manufacturing method
    • 驱动机构,精细移动阶段,曝光系统和设备制造方法
    • JP2005175271A
    • 2005-06-30
    • JP2003414884
    • 2003-12-12
    • Canon Incキヤノン株式会社
    • MIZUNO MAKOTO
    • G03F7/207H01L21/027
    • PROBLEM TO BE SOLVED: To provide a compact and clean driving mechanism having a long stroke and a high resolution.
      SOLUTION: The driving mechanism for relatively moving a first member and a second member comprises a first fixing mechanism which can be fixed to the first member by use of a first piezoelectric element, a second fixing mechanism which can be fixed to the first member by use of a second piezoelectric element, a first actuator coupled to the first fixing mechanism and the second fixing mechanism to be able to change a distance between the first fixing mechanism and the second fixing mechanism along the predetermined driving shaft, and a second actuator having a coupling part directly and indirectly coupled to the second member to be able to change a distance between the coupling part and the first fixing mechanism along the predetermined driving shaft. The first fixing mechanism and the second fixing mechanism are fixed to the first member in a state where voltage is not applied to the first piezoelectric element and the second piezoelectric element.
      COPYRIGHT: (C)2005,JPO&NCIPI
    • 要解决的问题:提供具有长行程和高分辨率的紧凑且清洁的驱动机构。 解决方案:用于相对移动第一构件和第二构件的驱动机构包括可以通过使用第一压电元件固定到第一构件的第一固定机构,可固定到第一构件的第二固定机构 通过使用第二压电元件构成第一固定机构和第二固定机构的第一致动器,第一致动器,其连接到第一固定机构和第二固定机构,以能够沿着预定的驱动轴改变第一固定机构和第二固定机构之间的距离, 具有直接和间接地联接到第二构件的联接部分,以能够沿着预定的驱动轴改变联接部分和第一固定机构之间的距离。 第一固定机构和第二固定机构在不对第一压电元件和第二压电元件施加电压的状态下固定到第一构件。 版权所有(C)2005,JPO&NCIPI