专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

91. 发明专利

JP2009534848A Method and apparatus for synthetic antiferromagnetic structure temperature dependency has been reduced 审中-公开
公开(公告)号：JP2009534848A
公开(公告)日：2009-09-24
申请号：JP2009506652
申请日：2007-03-01
申请人：フリースケールセミコンダクターインコーポレイテッド
发明人：サン、ジジュン , エム．スローター、ジョン , ダブリュ．デーブ、レーヌ , ブイ．ピータンバラム、スリニバス
IPC分类号： H01L43/08 , G11B5/39 , H01F10/16 , H01L21/8246 , H01L27/105 , H01L43/12
CPC分类号： B82Y25/00 , B82Y40/00 , G11B5/3906 , H01F10/3204 , H01F10/3254 , H01F10/3272 , H01F41/302 , H01L43/10 , Y10T428/1121 , Y10T428/1129 , Y10T428/1143 , Y10T428/1193
摘要：合成反強磁性（ＳＡＦ）構造は、第１の強磁性層（２１０）、第１の挿入層（２０８）、結合層（２０６）、第２の挿入層（２０４）、および第２の強磁性層（２０２）を含む。挿入層は、ＳＡＦが反強磁性結合強度の温度依存性の低減を発揮するように選択された材料を含む。挿入層は、ＣｏＦｅまたはＣｏＦｅＸ合金を含んでもよい。挿入層（２０８、２０４）の厚みは、一軸異方性を増大させない、あるいは他の特性を劣化させないように選択される。

92. 发明专利

JP2009194070A Magnetic oscillator, magnetic head including the magnetic oscillator, and magnetic recording and reproducing apparatus 有权
标题翻译：磁振荡器，磁头包括磁振荡器，磁记录和再现装置
公开(公告)号：JP2009194070A
公开(公告)日：2009-08-27
申请号：JP2008031789
申请日：2008-02-13
申请人： Toshiba Corp , 株式会社東芝
发明人： KUDO KIWAMU , NAGASAWA TSURUMI , MIZUSHIMA KOICHI , SATO TOSHIE
IPC分类号： H01L43/08 , G11B5/35 , H03B15/00
CPC分类号： G11B5/02 , B82Y25/00 , G01R33/093 , G01R33/1284 , G11B5/3903 , G11B2005/0002 , H01F10/325 , H01F10/3254 , H01L43/08 , H03B15/006 , Y10T428/1114 , Y10T428/1121 , Y10T428/1143
摘要： PROBLEM TO BE SOLVED: To provide a magnetic oscillator that has a high Q value and a high output. SOLUTION: The magnetic oscillator includes: an oscillating field-generating unit 1 configured to generate an oscillating field; and a magnetoresistive element 2 including a magnetoresistive film including a first magnetic pinned layer 10 of which the magnetization direction is pinned, a first magnetic free layer 8 of which the magnetization direction oscillates with the oscillating field, and a first spacer layer 9 interposed between the first magnetic pinned layer and the first magnetic free layer. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供具有高Q值和高输出的磁性振荡器。解决方案：磁振荡器包括：振荡场产生单元1，被配置为产生振荡场; 以及包括磁阻膜的磁阻元件2，该磁阻膜包括其磁化方向被钉扎的第一磁性被钉扎层10，磁化方向与振荡场一起振荡的第一磁性自由层8和介于其间的第一间隔层9 第一磁性固定层和第一磁性自由层。版权所有（C）2009，JPO＆INPIT

93. 发明专利

JP2009164182A Magneto-resistive effect element, magnetic head, and magnetic recording/reading device 审中-公开
标题翻译：磁阻效应元件，磁头和磁记录/读取装置
公开(公告)号：JP2009164182A
公开(公告)日：2009-07-23
申请号：JP2007339432
申请日：2007-12-28
申请人： Hitachi Global Storage Technologies Netherlands Bv , ヒタチグローバルストレージテクノロジーズネザーランドビーブイ
发明人： SATO AKIRA , HOSHINO KATSUMI , HOSHIYA HIROYUKI
IPC分类号： H01L43/08 , G11B5/39 , H01F10/26 , H01F10/32 , H01L43/10
CPC分类号： G01R33/091 , B82Y10/00 , B82Y25/00 , G01R33/093 , G01R33/098 , G11B5/3906 , G11B2005/3996 , Y10T428/1114 , Y10T428/1121 , Y10T428/1143
摘要： PROBLEM TO BE SOLVED: To provide a practical magneto-resisistive effect element that has moderate area resistance and a high rate of change in magnetoresistance in a CPP-GMR, and that copes with the request for a narrow lead gap. SOLUTION: The magneto-resissistive effect element has a ferromagnetic fixed layer, including a first ferromagnetic film 117, where the magnetization direction is fixed unidirectionally; a ferromagnetic free layer, including a second ferromagnetic film 123 where the magnetization direction changes, corresponding to an external magnetic field; an intermediate layer 121 provided between the ferromagnetic fixed layer and the ferromagnetic free layer; and a current constriction layer 120 for narrowing down the current. At least one of the ferromagnetic fixed layer and the ferromagnetic free layer has a high polarizability layer. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种具有中等面积电阻和CPP-GMR中磁阻的高变化率的实用磁阻效应元件，并且能够应对窄导线间隙的要求。解决方案：磁电阻效应元件具有铁磁固定层，其包括第一铁磁膜117，其中磁化方向单向地固定; 铁磁自由层，其包括对应于外部磁场的磁化方向改变的第二铁磁膜123; 设置在铁磁固定层和铁磁性自由层之间的中间层121; 以及用于缩小电流的电流收缩层120。铁磁固定层和铁磁自由层中的至少一个具有高极化性层。版权所有（C）2009，JPO＆INPIT

94. 发明专利

JP2009094244A Magnetic recording element, its manufacturing method, and magnetic memory 有权
标题翻译：磁记录元件，其制造方法和磁记忆
公开(公告)号：JP2009094244A
公开(公告)日：2009-04-30
申请号：JP2007262575
申请日：2007-10-05
申请人： Toshiba Corp , 株式会社東芝
发明人： OSAWA YUICHI , NAKAMURA SHIHO , MORISE HIROSHI , YANAGI SATOSHI , SAIDA DAISUKE
IPC分类号： H01L43/08 , H01L21/8246 , H01L27/105 , H01L43/12
CPC分类号： G11C11/1675 , G11C11/161 , G11C11/1659 , Y10T428/11 , Y10T428/1121 , Y10T428/1143 , Y10T428/115
摘要： PROBLEM TO BE SOLVED: To provide a magnetic recording element easily manufacturable, and excelling in operational stability, and also to provide its manufacturing method, and a magnetic memory. SOLUTION: This magnetic recording element 10 is provided with: a layered body S having a first magnetic layer whose magnetization is substantially fixed in a first direction nearly perpendicular to a film surface, a second magnetic layer whose magnetization is fixed in a second direction nearly perpendicular to the film surface and opposite to the first direction, a third magnetic layer formed between the first and second magnetic layers, and whose magnetization direction is variable, a first intermediate layer B1 formed between the first and third magnetic layers, and a second intermediate layer B2 formed between the second and third magnetic layers; and a pair of electrodes 5 carrying a current in a direction nearly perpendicular to the film surface of the layered product. The magnetic recording element 10 is characterized in that the cross-sectional area in a direction parallel to the film surface at a thickness midpoint of the first magnetic layer is larger than that of the second magnetic layer. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供易于制造和优异的操作稳定性的磁记录元件，以及提供其制造方法和磁存储器。解决方案：该磁记录元件10设置有：具有第一磁性层的层叠体S，第一磁性层的磁化基本上固定在与膜表面几乎垂直的第一方向上，第二磁性层的磁化固定在第二磁性层近似垂直于膜表面并与第一方向相反的方向的第一中间层B1，形成在第一和第二磁性层之间并且其磁化方向可变的第三磁性层，形成在第一和第三磁性层之间的第一中间层B1和形成在第二和第三磁性层之间的第二中间层B2; 以及一对电极5，其沿着与层叠体的膜表面大致垂直的方向承载电流。磁记录元件10的特征在于，在第一磁性层的厚度中点处平行于膜表面的方向上的横截面积大于第二磁性层的横截面积。版权所有（C）2009，JPO＆INPIT

95. 发明专利

JP3958947B2 Magnetic sensing element and a method of manufacturing the same 有权
公开(公告)号：JP3958947B2
公开(公告)日：2007-08-15
申请号：JP2001279194
申请日：2001-09-14
申请人：アルプス電気株式会社
发明人：義弘西山
IPC分类号： H01L43/08 , G01R33/09 , G11B5/31 , G11B5/39 , G11B5/40 , H01F10/16 , H01L43/12
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3116 , G11B5/3903 , G11B5/3909 , G11B5/40 , G11B2005/3996 , Y10T29/49034 , Y10T29/49046 , Y10T428/1107 , Y10T428/1143

96. 发明专利

JP3625199B2 Magnetoresistive element 有权
公开(公告)号：JP3625199B2
公开(公告)日：2005-03-02
申请号：JP2001249934
申请日：2001-08-21
申请人：松下電器産業株式会社
发明人：明弘小田川 , 雅祥平本 , 望松川 , 博榊間 , 賢二飯島
IPC分类号： G01R33/09 , G11B5/39 , G11C8/02 , H01F10/14 , H01F10/16 , H01F10/32 , H01F41/18 , H01F41/30 , H01L21/8246 , H01L27/105 , H01L27/22 , H01L43/08 , H01L43/12
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , B82Y40/00 , H01F10/3268 , H01F10/3272 , H01F41/302 , H01L27/228 , H01L43/12 , Y10T428/1107 , Y10T428/1121 , Y10T428/1129 , Y10T428/1143 , Y10T428/1193

97. 发明专利

JP2005044489A Cpp type giant magnetoresistance head 有权
标题翻译： CPP型巨型磁阻头
公开(公告)号：JP2005044489A
公开(公告)日：2005-02-17
申请号：JP2004047756
申请日：2004-02-24
申请人： Alps Electric Co Ltd , アルプス電気株式会社
发明人： NISHIYAMA YOSHIHIRO , SAITO MASAJI , HASEGAWA NAOYA , HAYAKAWA YASUO , UMETSU EIJI , IDE YOSUKE
IPC分类号： G11B5/39 , H01L43/08 , H01L43/10
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3929 , G11B2005/3996 , H01F10/3218 , H01F10/3263 , H01F10/3272 , Y10T428/1121 , Y10T428/1143 , Y10T428/1171 , Y10T428/1193
摘要： PROBLEM TO BE SOLVED: To obtain a CPP (Current Perpendicular to the Plane) type giant magnetoresistance head, with which a high output is obtained by firmly fixing the magnetization of a fixed magnetic layer while reducing joule heat. SOLUTION: This CPP type giant magnetoresistive head includes lower and upper shield layers and a giant magnetoresistance element having pinned and free magnetic layers disposed between the upper and lower shield layers through a non-magnetic layer. A current flows perpendicularly to the film plane of the giant magnetoresistance element. An anti-ferromagnetic layer is provided in the rear of the giant magnetoresistance element in the height direction to make contact with the upper or lower surface of a rear portion of the pinned magnetic layer extending in the height direction, and an exchange coupling magnetic field is produced at the interface with the upper or lower surface, so that the magnetization direction of the pinned magnetic layer is pinned by this exchange coupling magnetic field. For the anti-ferromagnetic layer, an insulating anti-ferromagnetic layer formed of NiO or α-Fe 2 O 3 is used . COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了获得CPP（垂直于平面的电流）型巨磁电阻头，通过在减少焦耳热的同时牢固地固定固定磁性层的磁化来获得高输出。解决方案：该CPP型巨磁阻头包括下屏蔽层和上屏蔽层，以及具有通过非磁性层设置在上屏蔽层和下屏蔽层之间的固定和自由磁性层的巨磁阻元件。 A电流垂直于巨磁阻元件的薄膜平面流动。在巨磁阻元件的高度方向的后方设有反铁磁层，以与高度方向延伸的被钉扎磁性层的后部的上表面或下表面接触，交换耦合磁场为在与上表面或下表面的界面处产生，使得被钉扎的磁性层的磁化方向被该交换耦合磁场固定。对于反铁磁层，使用由NiO或α-Fe O 3 形成的绝缘反铁磁层。版权所有（C）2005，JPO＆NCIPI

98. 发明专利

JP2004119755A Magnetic detector and its manufacturing method 审中-公开
公开(公告)号：JP2004119755A
公开(公告)日：2004-04-15
申请号：JP2002282211
申请日：2002-09-27
申请人： Alps Electric Co Ltd , アルプス電気株式会社
发明人： HASEGAWA NAOYA , UMETSU EIJI
IPC分类号： G01R33/09 , B32B9/00 , G11B5/00 , G11B5/39 , H01L43/08 , H01L43/12
CPC分类号： G11B5/3906 , B82Y10/00 , B82Y25/00 , G11B2005/0016 , G11B2005/3996 , Y10T428/1129 , Y10T428/1143 , Y10T428/1171 , Y10T428/1193
摘要： PROBLEM TO BE SOLVED: To provide a magnetic detector which is capable of restraining a side leading from occurring even when a track is narrowed and of outputting a stable regenerated waveform, and to provide its manufacturing method. SOLUTION: A second ferromagnetic layer 32 whose direction of magnetization is antiparallel to that of a first ferromagnetic layer 30 is laminated on a second antiferromagnetic layer 31. Even when a static magnetic field is generated by a surface magnetic charge produced on the inner end face 30a of the first ferromagnetic layer 30, the static magnetic field is absorbed into the second ferromagnetic layer 32. Therefore, a static magnetic field generated by the first ferromagnetic layer 30 hardly penetrates into the element center of a free magnetic layer 28. As the result, the element center of the free magnetic layer 28 can be kept stable in a single magnetic domain state, so that the element center is reduced in hysteresis and capable of restraining Barkhausen noises from occurring. COPYRIGHT: (C)2004,JPO

99. 发明专利

JPH11274600A Manufacture of magnetic reluctance element 失效
标题翻译：磁性元件的制造
公开(公告)号：JPH11274600A
公开(公告)日：1999-10-08
申请号：JP7184498
申请日：1998-03-20
申请人： Fujitsu Ltd , 富士通株式会社
发明人： MIKAMI MASAAKI , ITO TAKASHI , ORIMOTO TAKAMITSU , OKADA MITSUMASA
IPC分类号： G11B5/39 , G01R33/09 , G11B5/31 , H01L43/08 , H01L43/12
CPC分类号： B82Y25/00 , G01R33/093 , G11B5/3116 , G11B5/3903 , G11B5/3932 , H01L43/12 , Y10T29/49021 , Y10T29/49032 , Y10T29/49046 , Y10T29/49048 , Y10T428/1143
摘要： PROBLEM TO BE SOLVED: To obtain a highly reliable magnetic reluctance element which is excellent in magnetic reluctance characteristics with good yield. SOLUTION: In a manufacturing method of a magnetic reluctance element by forming a first magnetic film 12, a non-magnetic film 14 and a second magnetic film 16 on an insulation film 10 one by one, providing a shielding resist 20 forming an element main body part on the second magnetic film 16, etching a side surface of the first magnetic film 12, the non-magnetic film 14 and the second magnetic film 16 to a tilting surface on the insulation film 10 by ion milling from the side of the second magnetic film 16, applying and forming a terminal 18 from on the insulation film 10 to the tilting surface and obtaining a magnetic reluctance element by removing the resist 20, the first magnetic film 12 is left and etched on the insulation film 10 in an outside region of the tilting surface when the first magnetic film 12, the non-magnetic film 14 and the second magnetic film 16 are subjected to ion milling.
摘要翻译：要解决的问题：获得具有优异磁阻特性的高可靠性磁阻元件，具有良好的收率。解决方案：在通过在绝缘膜10上逐个形成第一磁性膜12，非磁性膜14和第二磁性膜16的磁阻元件的制造方法中，提供形成元件主体的屏蔽抗蚀剂20 部分在第二磁性膜16上，通过从第二磁性膜16的侧面离子研磨将第一磁性膜12，非磁性膜14和第二磁性膜16的侧表面蚀刻到绝缘膜10上的倾斜表面膜16，将绝缘膜10上的端子18施加到倾斜表面，并且通过去除抗蚀剂20获得磁阻元件，第一磁性膜12在绝缘膜10的外部区域中留下并蚀刻当第一磁性膜12，非磁性膜14和第二磁性膜16进行离子铣削时的倾斜表面。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式