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92. 发明专利

JP4675084B2 mems microphone and micro speaker of the ultra-thin shape 有权
公开(公告)号：JP4675084B2
公开(公告)日：2011-04-20
申请号：JP2004311920
申请日：2004-10-27
申请人：アクスティカ,インコーポレイテッド
发明人：チューシュー , エイ．シフェルノレイモンド
IPC分类号： B81C1/00 , H01L21/00 , H01L21/30 , H01L21/301 , H01L21/46 , H04R19/00
CPC分类号： H04R19/005 , B81B2201/0257 , B81B2203/0127 , B81C1/00182

93. 发明专利

JP2011017693A Semiconductor dynamic quantity sensor and method of manufacturing the same 有权
标题翻译：半导体动态数量传感器及其制造方法
公开(公告)号：JP2011017693A
公开(公告)日：2011-01-27
申请号：JP2010121888
申请日：2010-05-27
申请人： Denso Corp , 株式会社デンソー
发明人： FUJII TETSUO , YOKURA HISANORI , HIGUCHI YUJI
IPC分类号： G01P15/125 , B81B3/00 , B81C1/00 , H01L29/84
CPC分类号： H01L27/1203 , B81B2201/025 , B81B2201/0257 , B81B2201/0285 , B81B2201/047 , B81C1/00182 , G01C19/5755 , G01P15/0802 , G01P15/125 , G01P2015/0814 , H01L21/84
摘要： PROBLEM TO BE SOLVED: To suppress a variation of gaps between the tip of the projection provided, directly underneath a movable portion and the movable portion in the direction of thickness in a semiconductor dynamic quantity sensor wherein a movable portion is partitioned from a semiconductor layer by a groove reaching an insulation layer and the insulation layer, directly underneath the movable portion is removed through the groove.SOLUTION: A substrate made of single-crystal silicon is prepared, wherein a semiconductor layer that is made of P conductivity-type silicon having higher impurity concentration than a semiconductor substrate and is arranged on the surface of the semiconductor substrate, with a surface having (100) plane with an insulation layer in between. The semiconductor layer is etched anisotropically to form a groove reaching the insulation layer, so as to partition a movable portion. The insulation layer is etched through the groove, making the groove to reach the semiconductor substrate, and the width of the insulation layer, directly underneath the movable portion in the horizontal direction is made smaller than that of the movable portion. The groove is subject to alkali-etching through the groove, and a projection the tip of which is in contact with the insulation layer is formed on the surface of the semiconductor substrate directly underneath the movable portion. The insulation layer located directly underneath the movable portion is removed.
摘要翻译：要解决的问题：为了抑制在半导体动态传感器中的可移动部分与半导体层分隔开的可移动部分与可移动部分之间的厚度方向上的直接位于可移动部分之下的突起的尖端之间的间隙的变化，通过沟槽直接到达绝缘层和直接在可移动部分下方的绝缘层的沟槽。制备由单晶硅制成的衬底，其中由具有较高的P导电型硅的半导体层制成的半导体层杂质浓度高于半导体衬底，并且被布置在半导体衬底的表面上，其表面具有（100）面并具有绝缘层。各向异性地蚀刻半导体层以形成到达绝缘层的凹槽，以分隔可移动部分。通过沟槽蚀刻绝缘层，使沟槽到达半导体衬底，直到可动部分在水平方向下方的绝缘层的宽度比可动部分的宽度小。通过沟槽对槽进行碱蚀刻，并且在可动部分的正下方形成半导体衬底的与绝缘层接触的突起。位于可动部分正下方的绝缘层被去除。

96. 发明专利

JP2009200474A Method for manufacturing single soi wafer acceleration meter 审中-公开
标题翻译：制造单晶硅加速度计的方法
公开(公告)号：JP2009200474A
公开(公告)日：2009-09-03
申请号：JP2008332367
申请日：2008-12-26
申请人： Honeywell Internatl Inc , ハネウェル・インターナショナル・インコーポレーテッド
发明人： YU LIANZHONG
IPC分类号： H01L29/84 , B81B3/00 , B81C1/00 , G01P15/125
CPC分类号： B81C1/00182 , B81B2201/0235 , B81C2201/0136
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing an MEMS device from a single silicon-on-insulator (SOI) wafer.
SOLUTION: An SOI wafer 20 includes a silicon (Si) handle layer 28, an Si mechanism layer 24, and an insulating layer 26 located between the Si handle layer and the Si mechanism layer. A process of etching an active component from the Si mechanism layer is included. After that, boron is doped onto a surface of the exposed Si mechanism layer. Next, a part of an insulating layer near the active component in which the Si mechanism layer is etched is removed and the Si handle layer near the active component is etched.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供从单个绝缘体上硅（SOI）晶片制造MEMS器件的方法。解决方案：SOI晶片20包括位于Si处理层和Si机理层之间的硅（Si）手柄层28，Si机构层24和绝缘层26。包括从Si机理层蚀刻活性成分的方法。之后，将硼掺杂到暴露的Si机理层的表面上。接下来，去除其中Si机理层被蚀刻的活性组分附近的一部分绝缘层，并且蚀刻有源组分附近的Si处理层。版权所有（C）2009，JPO＆INPIT

97. 发明专利

JP2008536697A The configuration of the micromechanical element and the corresponding fabrication method 有权
公开(公告)号：JP2008536697A
公开(公告)日：2008-09-11
申请号：JP2007553586
申请日：2006-01-25
申请人：ローベルトボツシユゲゼルシヤフトミツトベシユレンクテルハフツングRobert Bosch Gmbh
发明人：ライネンバッハクリスティーナ , シェリングクリストフ , クローンミュラージルヴィア , フクスティノ , ライヒェンバッハフランク , レルマーフランツ
IPC分类号： B81B3/00 , B81C1/00 , G01L9/00 , H01L29/84 , H04R19/04 , H04R31/00
CPC分类号： G01L9/0073 , B81B2203/0127 , B81B2203/0315 , B81C1/00182 , G01L9/0042 , H04R19/005 , H04R19/04 , H04R31/00
摘要：本発明は、マイクロマシニング型の構成エレメントに関する。本発明によれば、伝導性の基板（１；１'，１７，１９）が設けられており；該基板（１；１'，１７，１９）の表面（Ｖ）の上方に設けられた少なくとも１つの伝導性の層（９；９ａ）を備えた弾性的に変位可能なダイヤフラム（Ｍ；Ｍ'）が設けられており、伝導性の層（９；９ａ）が、基板（１；１'，１７，１９）に対して電気的に絶縁されており；媒体で充填された中空室（Ｈ；Ｈ'）が設けられており、該中空室（Ｈ；Ｈ'）が、基板（１；１'，１７，１９）とダイヤフラム（Ｍ；Ｍ'）との間に設けられており；該ダイヤフラム（Ｍ；Ｍ'）の下方で基板（１；１'，１７，１９）を通って延びる複数のパーフォレーション開口（１５；１５''；１５'''）が設けられており；該パーフォレーション開口（１５；１５''；１５'''）が、基板（１；１'，１７，１９）の裏面（Ｒ）から中空室（Ｈ；Ｈ'）への出入口を提供しており、これによって、媒体の、中空室（Ｈ；Ｈ'）内に位置する体積が、ダイヤフラム（Ｍ）の変位時に可変であることが提案されている。さらに、本発明は、相応の製作法に関する。

98. 发明专利

JP2006026895A Perpendicular level difference structure and its manufacturing method 审中-公开
标题翻译： PERPENDICULAR LEVEL DIFFERENCE STRUCTURE及其制造方法
公开(公告)号：JP2006026895A
公开(公告)日：2006-02-02
申请号：JP2005209252
申请日：2005-07-19
申请人： Samsung Electronics Co Ltd , 三星電子株式会社Samsung Electronics Co.,Ltd.
发明人： LEE SANG-WOO , KIM JONG-PAL , LEE BYEUNG-LEUL , CHOI JOON-HYOCK
IPC分类号： B81B3/00 , B81C1/00 , H01L29/06 , H02K27/18 , H02N13/00
CPC分类号： B81C1/00182 , B81B2201/0235 , B81C2203/0118 , G01P15/0802 , G01P15/125
摘要： PROBLEM TO BE SOLVED: To simply manufacture a perpendicular level difference structure having high perpendicular level difference. SOLUTION: The perpendicular level difference structure is provided with a substrate; a fixing electrode fixing part formed on the substrate; a fixing electrode movement part spaced from an upper part of the substrate by a predetermined distance and formed; a spring part for connecting the fixing electrode fixing part and the fixing electrode movement part and formed such that the fixing electrode movement part can be moved in a surface direction and a vertical direction of the substrate; a mobile electrode spaced from the upper part of the substrate by a predetermined distance and formed so as to have a predetermined clearance with the fixing electrode movement part in a horizontal direction; and a cover part bonded to a predetermined area of the fixing electrode movement part or the mobile electrode formed such that the fixing electrode movement part and the mobile electrode have the perpendicular level difference such that the fixing electrode movement part or the mobile electrode is moved in the surface direction and the vertical direction of the substrate. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：简单地制造具有高垂直水平差的垂直水平差分结构。解决方案：垂直水平差结构设置有基板; 形成在所述基板上的固定电极固定部; 固定电极移动部件，其与所述基板的上部隔开预定距离并形成; 用于连接固定电极固定部分和固定电极移动部分并形成为使得固定电极移动部分能够在基板的表面方向和垂直方向上移动的弹簧部分; 所述移动电极与所述基板的上部间隔预定距离并且形成为与所述固定电极移动部分在水平方向上具有预定的间隙; 以及覆盖部分，其结合到固定电极移动部分或移动电极的预定区域，所述预定区域形成为使得固定电极移动部分和移动电极具有垂直的电平差，使得固定电极移动部分或移动电极移动基板的表面方向和垂直方向。版权所有（C）2006，JPO＆NCIPI

99. 发明专利

JP2005161516A Ultrathin form factor mems microphones and microspeakers 有权
标题翻译：超微结构因子MEMS微波和微波器
公开(公告)号：JP2005161516A
公开(公告)日：2005-06-23
申请号：JP2004311920
申请日：2004-10-27
申请人： Akustica Inc , アクスティカ,インコーポレイテッドAkustica,Inc.
发明人： ZHU XU , CIFERNO RAYMOND A
IPC分类号： B81C1/00 , H01L21/00 , H01L21/30 , H01L21/301 , H01L21/46 , H04R19/00
CPC分类号： H04R19/005 , B81B2201/0257 , B81B2203/0127 , B81C1/00182
摘要： PROBLEM TO BE SOLVED: To provide a process for fabricating an MEMS device in which a substrate can be held even when the thickness of the substrate is reduced. SOLUTION: A carrier wafer 36 is attached to one side of the substrate 12 and the substrate is held for at least a part of the process of fabricating the MEMS device in which the thickness of the substrate is reduced. For example, the carrier wafer 36 is attached on a back side of the substrate after the thickness of the substrate is reduced. Then, processing such as etching is performed on the substrate from the side opposite from the side to which the carrier wafer is attached, and the MEMS device is fabricated. After that, the MEMS devices are separated into the individual MEMS devices by dicing. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种用于制造其中即使当基板的厚度减小时也可以保持基板的MEMS器件的工艺。解决方案：载体晶片36附接到基板12的一侧，并且基板被保持用于制造其中基板的厚度减小的MEMS器件的工艺的至少一部分。例如，在衬底的厚度减小之后，载体晶片36附着在衬底的背面。然后，从与安装载体晶片的一侧相反的一侧在基板上进行诸如蚀刻的处理，并且制造MEMS器件。之后，通过切割将MEMS器件分离成各个MEMS器件。版权所有（C）2005，JPO＆NCIPI

100. 发明专利

JP2005107180A Microoptical device and method of manufacturing same 审中-公开
标题翻译：微波器件及其制造方法
公开(公告)号：JP2005107180A
公开(公告)日：2005-04-21
申请号：JP2003340797
申请日：2003-09-30
申请人： Japan Aviation Electronics Industry Ltd , 日本航空電子工業株式会社
发明人： KATO YOSHICHIKA , YOSHIDA MEGUMI , MORI KEIICHI , KONDO KENJI , HAMADA YOSHIHIKO , IMAKI OSAMU
IPC分类号： B81B3/00 , B81C1/00 , G02B6/35 , G02B26/08
CPC分类号： G02B6/3584 , B81B3/0083 , B81B2201/045 , B81C1/00182 , G02B6/122 , G02B6/136 , G02B6/3514 , G02B6/3518 , G02B6/3546 , G02B6/357 , G02B6/3596 , G02B26/0841
摘要： PROBLEM TO BE SOLVED: To provide a microoptical device having a structure in which a mirror face has a fine and complicated shape, irregularities of the flat mirror face are in the level of 10 nm or smaller, and the wet etching time is made short, and to provide a method of manufacturing the same. SOLUTION: A masking material layer 44 is formed on a substrate 31 which is composed of a silicon substrate 42 and a single crystal silicon device layer 43 interposing an intermediate layer 41 of silicon dioxide (Fig. A), the masking material layer 44 is patterned, a mask 45 is formed having a pattern which is the same as the flat figure of an object optical device. In this case, the face to become a mirror face is the (100) plane of a silicon crystal. The device layer 43 is vertically etched by using the mask 45 as a mask with a dry etching of reactive ion until the intermediate layer 41 is exposed (Fig.C). Thereafter, the side wall face of a mirror 4 is made to be a flat crystal face (100) by performing an anisotropic wet etching in the crystal orientation in a KOH solution for approximately 10 minutes. Then, only the intermediate layer 41 under the movable part of the optical device is removed by selectively wet-etching the intermediate layer 41 (Fig.D). COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了提供具有镜面具有细小且复杂形状的结构的微光学装置，平面镜面的凹凸处于10nm以下的水平，湿蚀刻时间为缩短，并提供制造方法。解决方案：掩模材料层44形成在由硅衬底42和插入二氧化硅的中间层41（图A）的单晶硅器件层43）组成的衬底31上，掩模材料层 44被图案化，形成具有与对象光学装置的平面图相同的图案的掩模45。在这种情况下，成为镜面的面是硅晶体的（100）面。通过使用掩模45作为掩模，用反应离子的干蚀刻直到中间层41暴露（图C）来垂直蚀刻器件层43。此后，通过在KOH溶液中进行约10分钟的晶体取向的各向异性湿蚀刻，使反射镜4的侧壁面成为平坦的晶面（100）。然后，通过选择性地湿法蚀刻中间层41（图D），仅去除光学器件可移动部分下面的中间层41。版权所有（C）2005，JPO＆NCIPI

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