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91. 发明专利

JP2011215271A Diffraction lens 审中-公开
$Diffraction lens$
标题翻译：衍射镜
公开(公告)号：JP2011215271A
公开(公告)日：2011-10-27
申请号：JP2010081869
申请日：2010-03-31
申请人： Nagoya Univ , 国立大学法人名古屋大学
发明人： EBIZUKA NOBORU , ISHIKAWA KENJI , KONDO HIROMOTO , HORI MASARU
IPC分类号： G02B5/18 , G02B3/08
摘要： PROBLEM TO BE SOLVED: To provide a diffraction lens which is bright and whose diffraction efficiency is successfully maintained.SOLUTION: The diffraction lens includes an inner element part and an outer element part. In the inner element part, a plurality of surface ruling type gratings formed concentrically around a concentric axis perpendicular to the surface of a substrate are arranged so that the interval of the gratings is gradually narrower as it is away from the axis. In the outer element part, VP gratings including a plurality of trenches extending from the surface of the substrate in a depth direction, so as to surround the inner element part concentrically and a filler with which the trenches are filled and which has a refractive index different from that of the substrate are formed so that the interval of the gratings is gradually narrower as it is away from the axis.
摘要翻译：要解决的问题：提供一种光亮的衍射透镜，其衍射效率被成功地保持。解决方案：衍射透镜包括内部元件部分和外部元件部分。在内部元件部分中，与垂直于基板的表面的同心轴同心地形成多个表面刻划型光栅，使得光栅的间隔从远离轴线逐渐变窄。在外部元件部分中，VP光栅包括在深度方向上从基板的表面延伸的多个沟槽，以便同心地包围内部元件部分，并且填充物与沟槽被填充并具有不同的折射率形成基板的间隔使得光栅的间隔随着离开轴线而逐渐变窄。

92. 发明专利

JP2011209223A Apparatus for measuring interference of thickness or temperature 审中-公开
标题翻译：测量厚度或温度干扰的装置
公开(公告)号：JP2011209223A
公开(公告)日：2011-10-20
申请号：JP2010079272
申请日：2010-03-30
申请人： Meijo Univ , Nagoya Univ , Nu System Kk , Nuシステム株式会社 , 国立大学法人名古屋大学 , 学校法人名城大学
发明人： HORI MASARU , ITO AKIFUMI , OTA TAKAYUKI , TOJIMA YASUHIRO
IPC分类号： G01B11/06 , G01B9/02 , G01K11/12
摘要： PROBLEM TO BE SOLVED: To accurately measure a thickness and a temperature of a measurement object with no contact therewith.SOLUTION: An interference measuring apparatus includes a light source 10 for radiating supercontinuum light; an optical fiber coupler 11 for splitting the SC light into measuring light and reference light; a mirror 12; a position adjustment device 13 for adjusting a position of the mirror 12; a light receiving device 14 measuring a wavelength spectrum of the interference intensity of the measuring light with the reference light; and an interference waveform analyzer 15 for obtaining a spatial distribution of interference intensity by the inverse Fourier transform of the spectrum of the interference intensity into spatial coordinates and measuring the thickness and the temperature of the measurement object based on the spatial distribution.
摘要翻译：要解决的问题：精确地测量与其不接触的测量对象的厚度和温度。解决方案：干涉测量装置包括用于辐射超连续光的光源10; 用于将SC光分解为测量光和参考光的光纤耦合器11; 镜子12; 用于调节反射镜12的位置的位置调节装置13; 光接收装置14，用参考光测量测量光的干涉强度的波长谱; 以及干涉波形分析器15，用于通过将干涉强度的频谱的傅里叶逆变换为空间坐标来获得干涉强度的空间分布，并且基于空间分布来测量测量对象的厚度和温度。

93. 发明专利

JP2011163825A Surface analyzer and surface analysis method 审中-公开
标题翻译：表面分析仪和表面分析方法
公开(公告)号：JP2011163825A
公开(公告)日：2011-08-25
申请号：JP2010024492
申请日：2010-02-05
申请人： Meijo Univ , Nagoya Univ , Nu System Kk , Nuシステム株式会社 , 国立大学法人名古屋大学 , 学校法人名城大学
发明人： HORI MASARU , ITO AKIFUMI , TOJIMA YASUHIRO , OTA TAKAYUKI
IPC分类号： G01J5/00 , G01J5/58 , G01N21/35 , G01N21/3563 , G01N21/359
摘要： PROBLEM TO BE SOLVED: To achieve a surface analyzer measuring a temperature of an object to be measured as well as analyzing condition of a desired surface of the object to be measured. SOLUTION: The surface analyzer is constituted of: a light source 10 emitting supercontinuum light; an optical fiber coupler 11 dividing the SC light into measuring light and reference light; a mirror 12; a driving device 13 moving the mirror 12; a light-receiving means 14 measuring an interference waveform between the measuring light and the reference light; and an interference waveform analysis means 15 analyzing a temperature and surface condition of the object to be measured from the interference waveform. The interference waveform analysis means 15, together with a means of measuring a temperature from temperature change of a interference peak position of the interference waveform, measures film quality, surface condition, etc. of the object to be measured by cutting out an interference peak corresponding to an intended surface of the object to be measured, from the interference waveform, and obtaining a Fourier transformed spectrum of the cut out waveform. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：为了实现测量待测物体的温度的表面分析仪以及分析待测物体的期望表面的状态。解决方案：表面分析仪由发射超连续光的光源10构成; 将SC光分成测量光和参考光的光纤耦合器11; 镜子12; 移动镜子12的驱动装置13; 测量测量光和参考光之间的干涉波形的光接收装置14; 以及干扰波形分析单元15，根据干扰波形分析被测量物体的温度和表面状态。干扰波形分析装置15与干扰波形的干扰峰值位置的温度变化测量温度的装置一起测量待测物体的膜质量，表面状况等，通过切出相应的干涉峰从干涉波形到被测量物体的预期表面，并获得切出波形的傅里叶变换光谱。版权所有（C）2011，JPO＆INPIT

94. 发明专利

JP2011163824A Interference measuring apparatus and measuring method 有权
标题翻译：干扰测量装置和测量方法
公开(公告)号：JP2011163824A
公开(公告)日：2011-08-25
申请号：JP2010024491
申请日：2010-02-05
申请人： Meijo Univ , Nagoya Univ , Nu System Kk , Nuシステム株式会社 , 国立大学法人名古屋大学 , 学校法人名城大学
发明人： HORI MASARU , ITO AKIFUMI , TOJIMA YASUHIRO , OTA TAKAYUKI
IPC分类号： G01B11/06 , G01B9/02 , G01K11/12
CPC分类号： G01B9/02023 , G01B9/02058 , G01B9/0209 , G01K11/00
摘要： PROBLEM TO BE SOLVED: To improve measurement accuracy in an interference measuring apparatus using the interference of light. SOLUTION: The interference measuring apparatus is constituted of a light source 10 for radiating supercontinuum light (SC light); an optical fiber coupler 11 for dividing the SC light into measuring light and reference light; a dispersion compensation element 12; a drive unit 13 for moving the dispersion compensation element 12; and a light-receiving means 14 for measuring the interference waveform between the measuring light and the reference light. A measurement object 15 to be measured is an Si substrate having a thickness of 800 μm. The dispersion compensation element 12 is an Si substrate having a thickness of 780 μm. In other words, the dispersion compensation element 12 is made of the same material as that of the measurement object 15 and is thinner by 20 μm than the measurement object 15. Interference by reflection at the back surface of the measurement object 15 and the back surface of the dispersion compensation element 12 has a narrow peak width since wavelength dispersion is mostly negated to improve measurement accuracy of peak positions. As a result, measurement accuracy in temperature and others is improved. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提高使用光的干涉的干涉测量装置的测量精度。解决方案：干涉测量装置由用于辐射超连续光（SC灯）的光源10构成; 用于将SC光分成测量光和参考光的光纤耦合器11; 色散补偿元件12; 用于移动色散补偿元件12的驱动单元13; 以及用于测量测量光和参考光之间的干涉波形的光接收装置14。待测量的测量对象15是厚度为800μm的Si衬底。色散补偿元件12是厚度为780μm的Si衬底。换句话说，色散补偿元件12由与测量对象15相同的材料制成，并且比测量对象15薄20μm。通过测量对象15的背面的反射和背面色散补偿元件12具有窄的峰宽，因为波长色散被大部分否定，以提高峰位置的测量精度。结果，提高了温度等测量精度。版权所有（C）2011，JPO＆INPIT

95. 发明专利

JP2011119030A Combinatorial type plasma process testing method, and inclined plasma generating device 审中-公开
标题翻译：组合式等离子体工艺测试方法和等离子体生成装置
公开(公告)号：JP2011119030A
公开(公告)日：2011-06-16
申请号：JP2008081959
申请日：2008-03-26
申请人： Kyushu Univ , Nagoya Univ , Osaka Univ , 国立大学法人九州大学 , 国立大学法人名古屋大学 , 国立大学法人大阪大学
发明人： HORI MASARU , SEKINE MAKOTO , SETSUHARA YUICHI , SHIRATANI MASAHARU
IPC分类号： H05H1/00 , H01L21/3065 , H05H1/24 , H05H1/46
CPC分类号： H01J37/3299 , H01J37/32935
摘要： PROBLEM TO BE SOLVED: To easily optimize external conditions of a plasma process. SOLUTION: There is provided a small-sized plasma generating device capable of establishing a state in which a plasma density is different depending on positions as shown in 4.A, and a radical density is different depending on positions as shown in 4.B. In this small-sized plasma generating device, an object to be processed by the plasma process and a material-forming substrate are arranged, and the plasma process is executed while measuring the plasma density and the radical density on a surface of the processed object. Resultant products of the plasma process are evaluated by positions and the plasma density and the radical density are decided at the positions at the highest evaluations. Moreover, in another large-sized or batch type plasma process, external conditions are adjusted so as to create those optimum plasma density and radical density. These adjustments need no plasma processing and the like for the processed object etc. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：容易优化等离子体工艺的外部条件。解决方案：提供一种能够建立等离子体密度根据4.A所示的位置而不同的状态的小型等离子体产生装置，并且根据4中所示的位置的自由基密度不同 .B。在这种小型等离子体产生装置中，布置了通过等离子体处理的物体和材料形成基板，并且在测量处理物体的表面上的等离子体密度和自由基浓度的同时执行等离子体处理。通过位置评估等离子体工艺的产物，并且在最高评价的位置处确定等离子体密度和自由基密度。此外，在另一种大型或间歇式等离子体工艺中，调节外部条件以产生最佳的等离子体密度和自由基密度。这些调整不需要处理对象等的等离子体处理等。版权所有：（C）2011，JPO＆INPIT

96. 发明专利

JP2014175051A Microwave waveguide device, plasma processing device, and plasma processing method 有权
标题翻译：微波波长装置，等离子体处理装置和等离子体处理方法
公开(公告)号：JP2014175051A
公开(公告)日：2014-09-22
申请号：JP2013043404
申请日：2013-03-05
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社 , Nagoya Univ , 国立大学法人名古屋大学
发明人： ITO HITOSHI , KUBOTA YUSUKE , TOYODA HIROTAKA , HORI MASARU
IPC分类号： H05H1/24 , H05H1/46
CPC分类号： H01J37/32229 , H01J37/32211
摘要： PROBLEM TO BE SOLVED: To provide a microwave waveguide device, a plasma processing device, and a plasma processing method, with which plasma is generated with stability.SOLUTION: A microwave waveguide device includes: a waveguide 21 that propagates a microwave, which is received from an input end 2A, from a first end 21a to a second end 21b; a circulator 22 that includes a first port 22a, a second port 22b coupled with the first end 21a, and a third port 22c coupled with the second end 21b and is constructed to receive the microwave from the input end 2A at the first port 22a, couples the microwave from the second port 22b to the first end 21a, receives the microwave from the second end 21b at the third port 22c, and returns the microwave to an input end 2A side; and an EH tuner 18 that is interposed between the input end 21a and the circulator 22 and reflects a part of the microwave, which is received at the third port 22c of the circulator 22 and is returned to the input end 2A side, to the first port 22a of the circulator 22, wherein a slot hole 28 is formed in the waveguide 21.
摘要翻译：要解决的问题：提供一种稳定地产生等离子体的微波波导装置，等离子体处理装置和等离子体处理方法。微波波导装置包括：传播微波的波导21，其被接收从输入端2A，从第一端21a到第二端21b; 包括第一端口22a，与第一端部21a耦合的第二端口22b和与第二端部21b耦合的第三端口22c的循环器22构造成从第一端口22a处的输入端2A接收微波，将微波从第二端口22b耦合到第一端21a，在第三端口22c处从第二端21b接收微波，并将微波返回到输入端2A侧; 以及插入在输入端21a和循环器22之间的EH调谐器18，并且将在循环器22的第三端口22c处接收并返回到输入端2A侧的微波的一部分反射到第一环形器22的端口22a，其中在波导21中形成有槽孔28。

97. 发明专利

JP2014028733A Method for producing carbon nanotubes 有权
标题翻译：生产碳纳米管的方法
公开(公告)号：JP2014028733A
公开(公告)日：2014-02-13
申请号：JP2012275890
申请日：2012-12-18
申请人： Toyota Motor Corp , トヨタ自動車株式会社 , Nagoya Univ , 国立大学法人名古屋大学
发明人： KATAYAMA YUKIHISA , HORI MASARU , KONDO HIROKI
IPC分类号： C01B31/02 , B82Y40/00 , C23C16/26
摘要： PROBLEM TO BE SOLVED: To provide a method for producing carbon nanotubes (CNT's) capable of controlling spacing between CNT's over a broad range easily and a low cost.SOLUTION: The method for producing carbon nanotubes includes a carbon nanotube growth step of growing carbon nanotubes on a surface of a substrate by decomposing, with a plasma, a source gas including a carbon source gas and by contacting, with the surface of the substrate, the carbon source gas thus decomposed. There is placed a blocking member which is capable of permitting arrival, at the substrate surface, of the carbon source gas decomposed in a plasma generating region and, on the other hand, of blocking the arrival, at the substrate surface, of the carbon source gas decomposed within the plasma generating region. The source gas further includes a nitrogen-containing gas having a molecular structure containing a nitrogen atom, and a content of nitrogen atoms derived from the nitrogen-containing gas in the source gas is 20 mg/L or less.
摘要翻译：要解决的问题：提供能够容易地控制CNT在宽范围内控制间隔的碳纳米管（CNT）的制造方法和低成本。解决方案：碳纳米管的制造方法包括生长碳纳米管的碳纳米管生长步骤通过用等离子体分解包含碳源气体的源气体并通过与基板的表面接触由此分解的碳源气体而在基板的表面上。放置有阻挡构件，其能够允许在等离子体产生区域中分解的碳源气体在基板表面到达，另一方面阻止碳源的到达基板表面气体在等离子体产生区域内分解。源气体还包括具有含氮原子的分子结构的含氮气体，源气体中的含氮气体的氮原子含量为20mg / L以下。

98. 发明专利

JP2013210589A Diffraction grating and method for manufacturing the same, and optical waveguide 有权
$Diffraction grating and method for manufacturing the same, and optical waveguide$
标题翻译：衍射光栅及其制造方法及光波导
公开(公告)号：JP2013210589A
公开(公告)日：2013-10-10
申请号：JP2012082527
申请日：2012-03-30
申请人： Nagoya Univ , 国立大学法人名古屋大学 , Nu System Kk , Nuシステム株式会社
发明人： EBIZUKA NOBORU , HORI MASARU , ITO MASAFUMI , TOJIMA YASUHIRO
IPC分类号： G02B5/32 , G02F1/13 , G11B7/135
摘要： PROBLEM TO BE SOLVED: To solve the problem that diffraction efficiency to natural polarization or the like is deteriorated since diffraction efficiency characteristics between S polarization and P polarization are deviated in accordance with a fact that a Bragg angle becomes larger in a transmission type VPH (volume Phase Holographic) diffraction grating and a thick transmission type rectangular diffraction grating.SOLUTION: It becomes possible to set diffraction efficiency of S polarization and P polarization to desired spectral characteristics in arbitrary wavelength and an arbitrary Bragg angle by making two values: difference between the maximum refractive index and the minimum refractive index to the S polarization; and difference between the maximum refractive index and the minimum refractive index to the P polarization to different predetermined values, by using an optical anisotropic medium as a material of a transmission type VPH diffraction grating and a thick transmission type rectangular diffraction grating.
摘要翻译：要解决的问题为了解决由于S偏振和P偏振之间的衍射效率特性偏离传播类型VPH（布拉格角变大）的事实来解决自然极化等的衍射效率劣化的问题（体积相位全息）衍射光栅和厚透射型矩形衍射光栅。解决方案：通过制作两个值，可以将S偏振和P偏振的衍射效率设置为任意波长和任意布拉格角的期望光谱特性：最大值折射率和S极化的最小折射率; 以及通过使用光学各向异性介质作为透射型VPH衍射光栅和厚透射型矩形衍射光栅的材料，使P偏振的最大折射率和最小折射率之间的差异达到不同的预定值。

99. 发明专利

JP2013179126A Etching equipment, etching method and cleaning equipment 有权
标题翻译：蚀刻设备，蚀刻方法和清洁设备
公开(公告)号：JP2013179126A
公开(公告)日：2013-09-09
申请号：JP2012041355
申请日：2012-02-28
申请人： Nagoya Univ , 国立大学法人名古屋大学
发明人： HORI MASARU , ISHIKAWA KENJI , TAJIMA SATOMI , HAYASHI TOSHIO
IPC分类号： H01L21/302
摘要： PROBLEM TO BE SOLVED: To provide etching equipment, an etching method and a cleaning equipment for suppressing exhaustion of a discharge tube and generation of impurity.SOLUTION: Etching equipment has: an etching chamber which accommodates Si or poly-Si; a first gas supply section which supplies a first gas containing Fto the etching chamber; and a second gas supply section which supplies a second gas consisting of NO to the etching chamber. Then, in the etching chamber, a reaction of F+NO→FNO+F occurs at a chamber temperature of 100°C or lower to generate F atoms, and a chemical dry etching of Si or poly-Si by the F atoms occurs.
摘要翻译：要解决的问题：提供蚀刻设备，用于抑制放电管的耗尽和杂质产生的蚀刻方法和清洁设备。解决方案：蚀刻设备具有：容纳Si或多晶硅的蚀刻室; 第一气体供给部，其向所述蚀刻室供给包含F的第一气体; 以及将由NO组成的第二气体供给到蚀刻室的第二气体供给部。然后，在蚀刻室中，在室温100℃以下发生F + NO→FNO + F的反应，生成F原子，通过F原子进行化学干蚀刻Si或多晶Si。

100. 发明专利

JP2012218949A Method for manufacturing carbon nanotube 有权
标题翻译：制备碳纳米管的方法
公开(公告)号：JP2012218949A
公开(公告)日：2012-11-12
申请号：JP2011083003
申请日：2011-04-04
申请人： Toyota Motor Corp , Nagoya Univ , トヨタ自動車株式会社 , 国立大学法人名古屋大学
发明人： KATAYAMA YUKIHISA , HAMA YUICHIRO , HORI MASARU , KANO HIROYUKI , HIRAMATSU MINEO
IPC分类号： C01B31/02 , B01J23/755
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a carbon nanotube which can develop a carbon nanotube whose verticality is high and crystallinity is high, stably at a comparatively low temperature.SOLUTION: The method for manufacturing a carbon nanotube consists of a first step which provides any one kind among nickel, cobalt and iron or plural catalytic metals M and carbon C on the substrate W, and a second step which manufactures the carbon nanotube CNT which applies plasma CVD method, provides the plasma decomposed carbon to the substrate W, and develops this plasma decomposed carbon on the substrate W by using the catalytic metal M as a starting point.

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